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The bidirectional DC-DC converter was selected as the research object. Based on the connection topology of energy storage and consumption components in the hybrid energy storage system, power demand indicators were determined for different energy flow directions, and the parameters of the main converter components and appropriate circuit components were established. A circuit model of buck/boost was constructed, and an adaptive fast terminal sliding mode control strategy was designed. The controller parameters were optimized using an improved genetic algorithm. Different control parameters have different control effects. In order to obtain better voltage output characteristics,the parameters of the adaptive fast terminal sliding mode control strategy were optimized.The proposed method can be verified to exhibit good control performance through simulation.

Photothermoelectric (PTE) detectors, renowned for their ultra-broadband photodetection capabilities at room temperature without requiring an external power supply, are pivotal for advancing infrared and terahertz detection technologies. Despite significant advancements with high-performance PTE detectors utilizing low-dimensional nanomaterials like graphene, persistent challenges such as low optical absorption efficiency and the complexities of scaling integration processes continue to restrict enhancements in device integration and wavelength scalability. Here, we introduce a high-performance long-wave infrared (LWIR) PTE photodetector, integrating a resonant nanophotonic structure with a photothermoelectric nanofilm. This detector capitalizes on the synergistic interactions between metasurfaces and photonic resonators, achieving an unprecedented peak absorption rate of 98.6% across a critical operational range of 8–20 μm. Our pioneering integration of the perfect absorber with photothermoelectric materials facilitates the fabrication of a self-powered detector, showcasing a responsivity of 0.388 mA W−1, a rapid response time of 10 ms, and outstanding air stability. This research not only validates the feasibility of room-temperature, highly sensitive, and broadband photodetectors but also introduces a scalable approach that can be extended to other spectral regions through straightforward modifications to the resonant wavelength of the absorber. [ABSTRACT FROM AUTHOR]

Topological materials with well-defined surfaces and edges have become a prominent research topic. As topological insulators, MnBi2Te4 thin films, with their unique surfaces, exhibit exceptional electron transport properties and good applicability in low-noise, high-sensitivity photoelectric detection. This paper reports a straightforward, efficient, and cost-effective thermal evaporation method for preparing quantum MnBi2Te4 thin films, along with an investigation into their photoelectric detection performance. These films can be used to fabricate array devices, with the resulting photodetectors achieving a response current of 97 mA W−1 at room temperature and a response speed of <1 ms. Moreover, they demonstrate stability in the air for >30 d, with the photoelectric performance degrading by <15%. Our research introduces a new application for topological materials in photoelectric detection and establishes a strong foundation for the design and development of high-performance photodetectors in the future. [ABSTRACT FROM AUTHOR]

Bismuth telluride (Bi2Te3) presents a promising option for producing high-performance semiconductor devices such as transistors and photodetectors thanks to its intriguing electrical properties as a topological insulator (TI). This study focuses on the precise nanoscale physical vapor deposition (PVD) growth of two-dimensional (2D) Bi2Te3 nanosheets and investigates their potential in high-performance photodetectors. In order to maximize the performance of Bi2Te3 nanosheet devices, we constructed a Bi2Te3/WSe2 heterojunction by a vertical stacking method, and the devices exhibited obvious current rectification behavior in the dark, effectively realizing the detection from visible light to near-infrared wavebands photodetection with excellent performance, including high responsivity (R = 7.6 A/W), the outstanding specific detectivity (D* = 3.01 × 1011 Jones), and fast response time (214/276 μs). The results of this work not only help to understand the PVD growth mechanism of Bi2Te3 nanosheets but also provide ideas for the construction of 2D Bi2Te3 nanostructured optoelectronic heterojunction devices. [ABSTRACT FROM AUTHOR]

With the construction and development of the smart grid, the power business puts higher requirements on the communication capability of the network. In order to improve the energy efficiency of the space–air–ground-integrated power three-dimensional fusion communication network, we establish an optimization problem for joint air platform (AP) flight path selection, ground power facility (GPF) association, and power control. In solving the problem, we decompose the problem into two subproblems, one is the AP flight path selection subproblem and the other is the GPF association and power control subproblem. Firstly, based on the GPF distribution and throughput weights, we model the AP flight path selection subproblem as a Markov Decision Process (MDP) and propose a multi-agent iterative optimization algorithm based on the comprehensive judgment of GPF positions and workload. Secondly, we model the GPF association and power control subproblem as a multi-agent, time-varying K-armed bandit model and propose an algorithm based on multi-agent Temporal Difference (TD) learning. Then, by alternately iterating between the two subproblems, we propose a reinforcement learning (RL)-based joint optimization algorithm. Finally, the simulation results indicate that compared to the three baseline algorithms (random path, average transmit power, and random device association), the proposed algorithm improves an overall energy efficiency of the system of 16.23%, 86.29%, and 5.11% under various conditions (including different noise power levels, GPF bandwidth, and GPF quantities), respectively. [ABSTRACT FROM AUTHOR]

Due to its unique band structure and topological properties, the 2D topological semimetal exhibits potential applications in photoelectric detection, polarization sensitive imaging, and Schottky barrier diodes. However, its inherent large dark current hinders the further improvement of the performance of the semimetal‐based photodetectors. In this study, a van der Waals (vdWs) field effect transistor (FET) composed of semimetal PdTe2 and transition metal dichalcogenides (TMDs) WSe2 is fabricated, which exhibits high sensitivity photoelectric detection performance in a wide band from visible light (405 nm) to mid‐infrared (5 µm). The dark current and the noise level in the device are greatly suppressed by the effective control of the gate. Benefiting from the extremely low dark current (1.2 pA), the device achieves an optical on/off ratio up to 106, a high detectivity of 9.79 × 1013 Jones and a rapid response speed (219 and 45 µs). This research demonstrates the latent capacity of the 2D topological semimetal/TMDs vdWs FET for broadband, high‐performance, and miniaturized photodetection. [ABSTRACT FROM AUTHOR]

Owing to its suitable electronic bandgap, excellent air stability, and high carrier mobility at room temperature, low‐dimensional bismuth oxyselenide (Bi2O2Se) has become attractive in the context of visible–near‐infrared (VIS–NIR) detection. However, the high carrier concentration and bolometric effect of Bi2O2Se nanosheets are not conducive to reducing the dark current and improving the response speed, which hinders Bi2O2Se nanosheet‐based photodetectors from achieving an optimal performance. In this study, a Bi2O2Se nanoribbon is controllably synthesized on a fluorophlogopite substrate by means of the chemical vapor deposition approach. Through the use of a Bi2O2Se nanoribbon structure and the application of a Schottky barrier between the Bi2O2Se and Au electrodes, a fast response and low noise photodetector is achieved. More specifically, the response times are 2.1 and 313 µs at 650 and 1550 nm, respectively, and the corresponding optimal detectivities are 3.28 × 1013 and 8.07 × 109 Jones. Furthermore, the device reaches a −3 dB bandwidth of 81 kHz and exhibits a responsivity of 3.2 × 105 A W−1 at 650 nm under a bias of 5 V. This study provides new opportunities for the application of high‐performance VIS–NIR photodetectors. [ABSTRACT FROM AUTHOR]