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The synthesis of carbon nitride films by ion-assisted pulsed laser deposition is described and the effect of laser fluence on the bonding and structure of the films is investigated.

A new study investigates the irradiation effect of low energy nitrogen-ion beam on the bonding and structural properties of carbon-nitride thin films.

Pulsed laser deposition was used to deposit carbon nitride thin films.

Carbon bonding in tetrahedral amorphous carbon films was characterized using visible Raman spectroscopy.

Filtered arc deposition was used to prepare nitrogen incorporate amorphous carbon films on silicon wafer, quartz and Ti/C substrates.

The method determining the sp3/sp2 ratio of tetrahedral amorphous carbon (ta-C) thin film was proposed using an accomplished medium estimate based on the simulation of an infrared reflection spectrum. The ta-C films were developed by filtered arc deposition apparatus equipped with a graphite cathode. Infrared reflection calculations were performed at room temperature using a Perkin-Elmer double-beam spectrometer. The volume fraction of sp3 bonds were collected through the reflection spectrum simulation which showed that IR reflection spectra were vulnerable to the parameters of the model.

Patterning of sp3 and sp2 bonded carbon was undertaken using conducting atomic-force microscopy.

Two-dimensional (2D) titanium nanodots were formed in the subsurface layer of single crystal SiO 2, i.e., a 2D Ti metal quantum dot composite, by subplantation of 9 kev Ti+ ions. Transmission electron microscopy images show that the Ti nanodots have a uniform size distribution of∼ 2 nm with very little deviation, almost constant edge-to-edge spacing (∼ 1 nm) between neighboring nanodots in the lateral direction, and a very narrow depth distribution. These nanodots exhibit no crystallinity and are smaller than our previously reported single crystalline Ti nanodots with body-centered-cubicβ phase, indicating that the size and crystallinity of metal nanodots can be controlled through subplantation. A preliminary mechanism for the formation of 2D nanodots during subplantation is discussed. [ABSTRACT FROM AUTHOR]

Transmission electron microscopy (TEM) images and micro-Raman scattering are used for studying the confined Ge nanodot formation at room temperature (RT) by [super 74][Ge.sup.+] implantation at very low kinetic energy. The morphology of amorphous Ge nanodots is modified by varying the temperature during ion implantation.

The capability of subplantation technique in producing Ti nanodots in single SiO(sub 2) crystal is described. The mechanism for the formation of two-dimensional (2D) during subplantation is detailed.

A surface plasmon resonance induced absorption band has been found in low energy Ti(super +) implanted single crystal SiO(sub 2). The observation of the SPR band in the visible (red) and the near infrared regions indicates that Ti(super +) nanoparticles with average size and volume fraction are formed in the sub-surface layer of the SiO(sub 2) matrix.

The optical constants of tetrahedral amorphous carbon (ta-C) films in the infrared region and at a wavelength of 633nm are investigated by an IR reflection spectrum and spectroscopic ellipsometry. The findings indicate that with increased sp3 content, ta-C film possess a dielectric constant, refractive index and extinction coefficient much closer to that of diamond.