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In the new economic environment, in order to further expand and strengthen the local mining industry and realize the sustainable development of geological and mineral resources, it is necessary to effectively transform the advantages of geological and mineral resources into industrial and economic advantages with scientific operation performance management. Based on this, this paper constructs a DEA-BCC model for performance evaluation of geological and mining enterprises in Jiangxi province, and conducts evaluation and research on the operational performance of geological and mining enterprises in Jiangxi Province. The research shows that in recent years, the mining enterprises in Jiangxi province have been developing well on the whole. However, some enterprises have too small scale and poor production efficiency, so they should strengthen cost control, appropriately expand scale, pay attention to scientific and technological innovation development, and improve the quality of employees to improve the level of business performance.

Ferroelectric negative capacitance field effect transistors(Fe-NCFETs) can break through the so-called “Boltzmann Tyranny” of traditional metal oxide semiconductor field effect transistors and reduce the subthreshold swing below 60 mV/dec, which could greatly improve the on/off current ratio and short-channel effect. Consequently, the power dissipation of the device is effectively lowered. The Fe-NCFET provides a choice for the downscaling of the transistor and the continuation of Moore’s Law. In this review, the representative research progress of Fe-NCFETs in recent years is comprehensively reviewed to conduce to further study. In the first chapter, the background and significance of Fe-NCFETs are introduced. In the second chapter, the basic properties of ferroelectric materials are introduced, and then the types of ferroelectric materials are summarized. Among them, the invention of hafnium oxide-based ferroelectric materials solves the problem of compatibility between traditional ferroelectric materials and CMOS processes, making the performance of NCFETs further improved. In the third chapter, the advantages and disadvantages of Fe-NCFETs with MFS, MFIS and MFMIS structures are first summarized, then from the perspective of atomic microscopic forces the “S” relationship curve of ferroelectric materials is derived and combined with Gibbs free energy formula and L-K equation, and the intrinsic negative capacitance region in the free energy curve of the ferroelectric material is obtained. Next, the steady-state negative capacitance and transient negative capacitance in the ferroelectric capacitor are discussed from the aspects of concept and circuit characteristics; after that the working area of negative capacitance Fe-NCFET is discussed. In the fourth chapter, the significant research results of Fe-NCFETs combined with hafnium-based ferroelectrics in recent years are summarized from the perspective of two-dimensional channel materials and three-dimensional channel materials respectively. Among them, the Fe-NCFETs based on three-dimensional channel materials such as silicon, germanium-based materials, III-V compounds, and carbon nanotubes are more compatible with traditional CMOS processes. The interface between the channel and the ferroelectric layer is better, and the electrical performance is more stable. However, thereremain some problems to be solved in three-dimensional channel materials such as the limited on-state current resulting from the low effective carrier mobility of the silicon, the small on/off current ratio due to the leakage caused by the small bandgap of the germanium-based material, the poor interfacial properties between the III-V compound materials and the dielectric layer, and the ambiguous working mechanism of Fe-NCFETs based on carbon nanotube. Compared with Fe-NCFETs based on three-dimensional channel materials, the Fe-NCFETs based on two-dimensional channel materials such as transition metal chalcogenide, graphene, and black phosphorus provide the possibility for the characteristic size of the transistor to be reduced to 3 nm. However, the interface performance between the two-dimensional channel material and the gate dielectric layer is poor, since there are numerous defect states at the interface. Furthermore, the two-dimensional channel materials have poor compatibility with traditional CMOS process. Hence, it is imperative to search for new approaches to finding a balance between device characteristics. Finally, the presently existing problems and future development directions of Fe-NCFETs are summarized and prospected.

At the beginning of the 1990s, China witnessed an increase in its international competitive strength in technology-intensive and capital-intensive industries, and a decrease in strength in labor-intensive industries. This paper analyzes the effect of vertical specialization on China's international industrial competitive strength, explores how different industries have varying reactions under its implementation, and employs theory to explain the possible causes of these reactions. It is found that vertical specialization can help to strengthen China's global industrial competitiveness, and on that basis, some suggestions are given on how to improve that competitiveness.

This article is an empirical analysis of the organization of Chinese exports, their comparative advantage, and technological structure, using the statistical data of Chinese foreign trade in recent years. The result demonstrates that labor-intensive products form the largest ratio of Chinese exports and also those that have the comparative advantage. The proportion of skill- and technology-intensive products is growing larger compared with the gross amount of general Chinese exports and among products with comparative advantage. However, compared with the average level in the world, the technology contained in Chinese exports is lower, and the growth of exports is mainly one of quantitative expansion. This article posits that the implementation of the strategy of sustainable development of foreign trade guided by competitive advantage is the necessary path for promoting the international competitive capacity of Chinese foreign trade products and obtaining more comparative interests.

The industrial clusters and the innovation regime of the developing countries tend to evolve collaboratively. This paper probes into the specific patterns of the technological innovation regime of the developing countries. Features of the market-oriented stage and the knowledge-based stage of innovation are illustrated. At the first stage of the market-oriented innovation, clusters undergo a rapid and radical expansion and their technology cumulativeness level is increased. Restructuring happens at the knowledge-oriented innovation stage, driving the clusters to upgrade from production to higher value-added sectors in the industrial chain and leading to more promising developmental outcomes. By analyzing the interactions between market expansion and knowledge accumulation of Shaoxing, a leading textile cluster in China, this paper suggests the construction of a supportive environment which facilitates the sustainable improvement in the innovation capability and the economic performance of industrial clusters in the developing countries.

Knowledge integration is the key for enterprise to capture sustainable competitive advantage. Based on review of preior research and papers on knowledge integration, a model is presented in this paper to explore the relationships among organizational culture, social capital, organizational learning and enterprise knowledge integration capability. Through theory analysis, the research framework was built and structural equation model was constructed. Then an empirical research was carried out based on a sample of 490 Chinese enterprises. Research results proved that organizational culture and organizational learning have positive direct effects on enterprise knowledge integration capability, but social capital does not directly affect enterprise knowledge integration capability. It is through organizational learning that social capital affects enterprise knowledge integration capability indirectly. Meanwhile, organizational culture has a positive effect on social capital, and social capital has a positive significant effect on organizational learning. The research result is of some value for enterprises to improve knowledge integration capability.

A three-level access control model based on role, department and task is proposed in this paper. Task is one of the basic concepts in project management research area and department is one of the basic concepts in organizational structure theory. After introducing the concepts of task and department, this model regards them as independent authorization factor with role of the traditional RBAC96. This model could effectively reduce the amount of roles that should be assigned to the users of same position with different business scope and the other users of same business scope with different position. The practice has shown that this model could simplify the authorization management and improve the flexibility of access control.