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The work was carried out to explore whether the anti-inflammatory effect of n-3 unsaturated fatty acids on patients with rheumatoid arthritis is related to the levels of inflammatory markers CRP and ESR. Studies on the treatment of rheumatoid arthritis with n-3 unsaturated fatty acid diet therapy and the outcome index containing CRP and/or ESR were included, and studies on the subjects suffering from other diseases affecting the outcome index were excluded. PubMed, Web of Science, EMBASE and Google Scholar were systematically searched, and all studies published from the establishment of the library to 2024 were collected. The Cochrane Bias Risk Assessment tool was used to evaluate the quality of the included studies. Data analysis was performed using Stata 16.0 software. Seven studies were included in this analysis. A total of 399 subjects were studied to explore the effect of an n-3 unsaturated fatty acid diet on rheumatoid arthritis. The results showed that there was no significant difference in CRP (Hedges's g = 0.06, 95% CI: −0.48–0.37, P = 0.79) and ESR (Hedges's g = −0.14, 95% CI: −0.61–0.33, P = 0.55) between the intervention and control groups. The results of this study showed that the anti-inflammatory effect of unsaturated fatty acids on rheumatoid arthritis was not correlated with CRP and ESR levels. Due to the small number of included studies, more high-quality studies are still needed to confirm this. [ABSTRACT FROM AUTHOR]

Abstract: Nanocrystalline (Mg1−x Cd x )3Sb2 (x =0–0.3) and nominally (Mg0.7Cd0.25Ag0.05)3Sb2 with a mean grain size of ∼35nm were prepared by mechanical alloying plus hot-pressing, and their transport and thermoelectric properties were investigated from 310K down to 20K. The results indicated that electric resistivity of (Mg1−x Cd x )3Sb2 decreased with increasing Cd content x, which could be ascribed to increase in carrier concentration indirectly caused by lattice distortion after substituted. The much larger decrease in the resistivity of (Mg0.7Cd0.25Ag0.05)3Sb2 than that of (Mg1−x Cd x )3Sb2 should originate from substantial increase in hole concentration due to introduction of acceptor impurity Ag. At lower temperature regimes, Mott''s T −1/4 law was observed, which could be attributed to the severe potential disorder caused by lattice distortion upon doping. Seebeck coefficient of all the substituted and co-doped specimens decreased presumably due to increased carrier concentration. Moreover, thermal conductivity of (Mg1−x Cd x )3Sb2 decreased monotonously with increasing x due to phonon scattering of the impurity (Cd) with greater atomic weight. The presence of slight precipitated elementary Sb and Cd phases should be responsible for the observed larger thermal conductivity of (Mg0.7Cd0.25Ag0.05)3Sb2 specimen. The values of the ZT for all the doped specimens enhanced. Especially, ZT of (Mg0.7Cd0.25Ag0.05)3Sb2 reach 0.01 at 300K, which is several orders magnitude higher than that un-doped one and those doped slightly with Cd only. Present result indicates that thermoelectric properties of Mg3Sb2 system can be effectively improved by the proper substitution of element Cd and co-doped with element Ag. [Copyright &y& Elsevier]

Abstract: The high-temperature characteristics of strain in Al0.22Ga0.78N layers, with and without a Si3N4 passivation layer, were investigated at temperatures from room temperature to 813 K by means of high-resolution X-ray diffraction. The results show that a small temperature-dependent strain relaxation occurs in the unpassivated Al0.22Ga0.78N layers when the temperature exceeds 523 K. After passivating, an additional tensile strain and an initial increase of the in-plane tensile strain with increasing temperature were observed in Al0.22Ga0.78N layers, and at higher temperatures the in-plane tensile strain only decreases slightly in the 100-nm-thick Al0.22Ga0.78N layer, but a pronounced temperature-dependent strain relaxation occurs in the 50-nm-thick one due to the fact that the thickness of the Al0.22Ga0.78N layer is close to the critical thickness, and hence the increase of tensile strain induced by passivation will result in partial strain relaxation via the formation of cracks or the glide motion and multiplication of dislocations. [Copyright &y& Elsevier]

Abstract: Cadmium doped compounds (Cd x Ti1−x )1+y S2 (0≤ x ≤0.075) were prepared by solid-state reaction, and their transport and thermoelectric properties were investigated from 4K to 310K. The results indicated that electric resistivity ρ increased first and then decreased with increasing Cd content; at low temperatures ρ–T curves for (Cd x Ti1−x )1+y S2 (x >0) was found to obey the Mott''s two-dimensional hopping law ln ρ–T −1/3. Moreover, it was found that the absolute thermopower |S| for all the doped compounds increased significantly in the whole temperature range investigated, and lattice thermal conductivity of the doped compounds rose obviously. The increase of ρ and |S| can be ascribed to decrease in electron concentration due to Cd substitution for Ti, while the slight decrease in ρ and |S| at high doping level could be caused by simultaneous intercalation of some Cd (and Ti) atoms upon heavy doping. The larger lattice thermal conductivity of the doped compounds would imply enhancement of the acoustic velocity. Besides, experiments show that the figure of merit, ZT, of the doped compound is improved in almost the whole temperature range investigated due to great enhancement of its thermopower, and specifically it reaches 0.022 at 310K for (Cd0.05Ti0.95)1+y S2, which is about 23% larger than that of TiS2. [Copyright &y& Elsevier]

GaN1−xPx ternary alloys with high P compositions were deposited on sapphire substrates by means of metal-organic chemical vapor deposition. Depth profiles of the elements indicate that the maximum P/N composition ratio is about 17% and a uniform distribution of the P atoms in the alloys is achieved. 2θ/ω XRD spectra demonstrate that the (0 0 0 2) peak of the GaN1−xPx alloys shifts to smaller angle with increasing P composition. From the photoluminescence (PL) spectra, the red shifts to the bandedge emission of GaN are determined to be 73, 78, 100 and 87 meV for the GaN1−xPx alloys with the P/N composition ratios of 3%, 11%, 15% and 17%, respectively. No PL peak related to GaP is observed, indicating that the phase separation between GaN and GaP is well suppressed in our GaN1−xPx samples. [Copyright &y& Elsevier]

Photoluminescence (PL), X-ray diffraction (XRD) and Raman spectra have been measured to characterize the effects of phosphorus on the optical and structural properties of GaN1−xPx alloys with x&les;15%, grown by means of light-radiation heating, low-pressure metal-organic chemical vapor deposition. The PL spectra of GaN1−xPx show the largest red shift of 100 meV from the band-edge emission of GaN. XRD rocking curves show that the (0 0 0 2) peak of GaN1−xPx shifts to smaller angles with increasing P content. The Raman spectra of GaN1−xPx, recorded in backscattering geometry, exhibit four new vibrational modes at 256, 314, 377 and 428 cm−1 compared with an undoped GaN sample. The modes at 377 and 428 cm−1 are attributed to gap modes related to the Ga–P bond vibrations, whereas the other two modes at 256 and 314 cm−1 are assigned to phosphorus clusters and disorder-activated scattering, respectively. The frequency of the A1 (LO) mode is found to decrease with increasing x at a much high rate of approximately 268 cm−1/x for x<0.03. This red shift is attributed to the effects of alloying and strain. Furthermore, we have not observed characterizations related to GaP resulted from the phase separation from PL, XRD and Raman spectra of all investigated GaN1−xPx samples. [Copyright &y& Elsevier]