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The paper is based on results obtained from topography of surfaces of sheets rolled from deep-drawing steel of the type KOHAL grade 697, non-alloy low-carbon structural steel EN 10263-2:2004 and aluminium. The presented results document correctness of the assumption that the rolling force Froll increases with the increasing reduction Δh and the quality of the rolled surface is improved at the simultaneous increasing of strength of rolled sheets and the decreasing of size of structural grains. The experiment was performed on the two-high rolling stand DUO 210 SVa, which enables only non-continuous technology in contrast to the rolling mill with continuous reduction on one sheet in several degrees on rolling trains, in consequence of which the obtained height parameters of the section are in close correlation with the predicted dependence. Contribution of the work consists in the creation of a mathematical model (algorithm) for predicting technological parameters of the two-high rolling stand DUO 210 SVa at change of the absolute reduction Δh, for example for a deep-drawing steel of the type KOHAL grade 697 and non-alloy lowcarbon structural steel PN EN 10263-2:2004 and aluminium, and also in the development of a method of calculation applicable to any material being rolled in general, because the authors have found that various materials can be differentiated by a derived analytical criterion IKP. This criterion is a function of ratio between the modulus of elasticity of reference material and that of actually rolled material. The reference material is here deep-drawing steel of the type KOHAL grade 697. Verification was carried out by measuring changes of final surface roughness profile and final strength of rolled sheets of the stated materials in relation to reductions and those were compared with theoretically predicted values. It is possible to identify and predict on the basis of this algorithm an instant state of surface topography in respect to variable technological conditions. On this basis it is then possible to calculate and plot individual main technological parameters.

The submitted paper aims to clarify the abrasive waterjet technology, particularly from the point of view of produced surface topography. It provides a new insight into the deformation process caused by the effect of abrasive waterjet and into the possibilities of using the surface topography for solving the issues of optimization of the process. The subject of study is a system of cutting tool, material and final surface topography and optimization of their parameters. The cutting or disintegrating tool of abrasive waterjet technology is flexible. The trajectory of its cut traces is strictly determined here by disintegration resistance at critical moments of tool-material interaction. The physico-mechanical character of the interaction within the cut will manifest itself in the final surface condition. This process can be re-analysed by measuring the selected elements of topography and roughness on the final surface, namely depending on the depth of the cut, technological parameters of the tool and mechanical parameters of the material. The mentioned principle is the basis of the presented solution. It lies in the analytical processing and description of correlation interrelations between set technological and measured topographical quantities in relation to the depth of cut and the type of material.

AbstractPd nanoparticles were prepared with reverse micelles of water/AOT/isooctane solution and deposited onto silicon or InP substrates by electrophoresis. A large change of capacitance-voltage characteristics of mercury contacts on a semiconductor was found after Pd deposition. This change could be modified when the Pd deposition is followed by a partial removal of the deposited AOT. The deposited Pd nanoparticles were investigated by optical mictroscopy, SIMS and SEM. Finally, Schottky diodes with barrier height as high as 1.07 eV were prepared by deposition of Pd nanoparticles on n-type InP and by a partial removal of superfluous AOT. These diodes are prospective structures for further testing as hydrogen sensors.

GaP:N green light emitting diodes were studied by measuring the light output versus current and by analyzing the electroluminescence spectra and deep level transient spectra. The decrease in electroluminescence efficiency was found to be caused by the new deep level established by recombination enhanced reaction from the electron trap. The results were further due that the nitrogen pair in the phosphorus site with silicon within the vicinity of gallium's location.

The injected carriers induced hot carrier effect in In(sub 1-x)Ga(sub x)As(sub y)P(sub 1-y) 1.3 micrometer laser diodes. The change of electroluminescent spectral produced by variation of injected current and heat-sink temperature manifest the hot carrier effect. The analysis of the positions of the peaks of envelop spectral curves and of the individual Fabry-Perot peaks indicate that carrier heating is responsible for the observed effects.