Degradation of commercial high-brightness GaP:N green light emitting diodes

GaP:N green light emitting diodes were studied by measuring the light output versus current and by analyzing the electroluminescence spectra and deep level transient spectra. The decrease in electroluminescence efficiency was found to be caused by the new deep level established by recombination enhanced reaction from the electron trap. The results were further due that the nitrogen pair in the phosphorus site with silicon within the vicinity of gallium's location.