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We discuss the wafer design and fabrication process for the 1.3-μm-wavelength AlGaInAs/InP transistor lasers, and the structural dependence of lasing and the electrical characteristics are shown. We particularly focus on the base structure, and the thickness and width dependence are numerically and experimentally analyzed. A thicker base layer resulted in lower optical confinement factor in the quantum wells (QWs), higher optical loss, and lower current gain. In addition, a wider base width caused leak current recombination outside the QWs. By modifying the structure of an n-p-n TL, it was possible to simultaneously realize room-temperature continuous-wave lasing and transistor operation. [ABSTRACT FROM PUBLISHER]

Room-temperature continuous-wave operation of a 1.3-\mum npn-AlGaInAs/InP transistor laser is successfully achieved for the first time. A threshold current of 39 mA and an external differential quantum efficiency of 13% are obtained under common base operation, while simultaneous transistor action is achieved with a current gain \beta of 0.02. [ABSTRACT FROM PUBLISHER]