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Room-Temperature Continuous-Wave Operation of npn-AlGaInAs Transistor Laser Emitting at 1.3-\mum Wavelength.
- Source :
- IEEE Photonics Technology Letters; Apr2013, Vol. 25 Issue 8, p728-730, 3p
- Publication Year :
- 2013
-
Abstract
- Room-temperature continuous-wave operation of a 1.3-\mum npn-AlGaInAs/InP transistor laser is successfully achieved for the first time. A threshold current of 39 mA and an external differential quantum efficiency of 13% are obtained under common base operation, while simultaneous transistor action is achieved with a current gain \beta of 0.02. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 10411135
- Volume :
- 25
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- IEEE Photonics Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 95452592
- Full Text :
- https://doi.org/10.1109/LPT.2013.2249508