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Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using time-resolved magneto-optical Kerr effect technique. In our device operating at gigahertz frequencies, we find a large displacement current of the order of mA's, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high frequency magnetotransport techniques.

We investigated the effect of Fe segregated from partially Fe-substituted MgO (MgFeO) on the magnetic properties of CoFeB/MgFeO multilayers. X-ray photoelectron spectroscopy (XPS) as well as magnetic measurements revealed that the segregated Fe was reduced to metal and exhibited ferromagnetism at the CoFeB/MgFeO interface. The CoFeB/MgFeO multilayer showed more than 2-fold enhancement in perpendicular magnetic anisotropy (PMA) energy density compared with a standard CoFeB/MgO multilayer. The PMA energy density was further enhanced by inserting an ultrathin MgO layer in between CoFeB and MgFeO layers. Ferromagnetic resonance measurement also revealed a remarkable reduction of magnetic damping in the CoFeB/MgFeO multilayers., Comment: 15 pages, 5 figures

Multiple neuromorphic applications require the tuning of two or more devices to a common signal. Various types of neuromorphic computation can be realized using spintronic oscillators, where the DC current induces magnetization precession, which turns into an AC voltage generator. However, in spintronics, synchronization of two oscillators using a DC signal is still a challenging problem because it requires a certain degree of similarity between devices that are to be synchronized, which may be difficult to achieve due to device parameter distribution during the fabrication process. In this work, we present experimental results on the mechanisms of synchronization of spin-torque oscillators. Devices are based on magnetic tunnel junction with a perpendicularly magnetized free layer and take advantage of a uniform magnetization precision in the presence of the magnetic field and a DC bias. By using an external microwave source, we show the optimal condition for the synchronization of the magnetic tunnel junctions. Finally, we present results on the in-series connection of two junctions and discuss the possible path towards improving oscillation power and linewidth. In addition, using numerical simulations of the coupled oscillators model, we aim to reproduce the conditions of the experiments and determine the tolerance for achieving synchronization.

We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the nanostructure, magnetic and magneto-transport properties of the MTJs were investigated in detail. When CoFeB was deposited at 100 K, the MTJs exhibited a perpendicular magnetic anisotropy (PMA) of 214 uJ/m2 and a voltage-controlled magnetic anisotropy (VCMA) coefficient of -45 fJ/Vm, corresponding to 1.4- and 1.7-fold enhancements in PMA and VCMA, respectively, compared to the case of room-temperature deposition of CoFeB. The improvement in the MTJ properties was not simply due to the morphology of the MTJ films. The interface-sensitive magneto-transport properties indicated that interfacial qualities such as intermixing and oxidation states at the MgO/CoFeB interfaces were improved by the cryogenic temperature deposition. Cryogenic-temperature sputtering deposition is expected to be a standard manufacturing process for next-generation magnetoresistive random-access memory., Comment: Submitted to ACS Applied Materials and Interfaces

Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expected to be an ultimate non-volatile memory with ultra-low power consumption. In conventional dynamic switching, the width of sub-nanosecond write voltage pulses must be precisely controlled to achieve a sufficiently low write-error rate (WER). This very narrow tolerance of pulse width is the biggest technical difficulty in developing VCMRAM. Heavily damped precessional switching is a writing scheme for VCMRAM with a substantially high tolerance of pulse width although the minimum WER has been much higher than that of conventional dynamic switching with an optimum pulse width. In this study, we theoretically investigate the effect of MTJ shape and the direction of the applied magnetic field on the WER of heavily damped precessional switching. The results show that the WER in elliptical-cylinder MTJ can be several orders of magnitude smaller than that in usual circular-cylinder MTJ when the external magnetic field is applied parallel to the minor axis of the ellipse. The reduction in WER is due to the fact that the demagnetization field narrows the component of the magnetization distribution perpendicular to the plane direction immediately before the voltage is applied.

The Fe/MgO interface is an essential ingredient in spintronics as it shows giant tunneling magnetoresistance and strong perpendicular magnetic anisotropy (PMA). A recent study demonstrated that the insertion of an ultra-thin LiF layer between the Fe and MgO layers enhances PMA significantly. In this study, we perform x-ray magnetic circular dichroism measurements on Fe/LiF/MgO multilayers to reveal the origin of the PMA enhancement. We find that the LiF insertion increases the orbital-magnetic-moment anisotropy and thus the magnetic anisotropy energy. We attribute the origin of this orbital-magnetic-moment-anisotropy enhancement to the stronger electron localization and electron-electron correlation or the better interface quality with fewer defects.

Enabling scalable and energy-efficient control of spin defects in solid-state media is desirable for realizing transformative quantum information technologies. Exploiting voltage-controlled magnetic anisotropy, we report coherent manipulation of nitrogen-vacancy (NV) centers by the spatially confined magnetic stray fields produced by a proximate resonant magnetic tunnel junction (MTJ). Remarkably, the coherent coupling between NV centers and the MTJ can be systematically controlled by a DC bias voltage, allowing for appreciable electrical tunability in the presented hybrid system. In comparison with current state-of-the-art techniques, the demonstrated NV-based quantum operational platform exhibits significant advantages in scalability, device compatibility, and energy-efficiency, further expanding the role of NV centers in a broad range of quantum computing, sensing, and communications applications., Comment: 13 pages, 4 figures

Performance of magnetoresistive sensors is today mainly limited by their 1/f low-frequency noise. Here, we study this noise component in vortex-based TMR sensors. We compare the noise level in different magnetization configurations of the device, i.e vortex state or uniform parallel or antiparallel states. We find that the vortex state is at least an order of magnitude noisier than the uniform states. Nevertheless, by activating the spin-transfer induced dynamics of the vortex configuration, we observe a reduction of the 1/f noise, close to the values measured in the AP state, as the vortex core has a lower probability of pinning into defect sites. Additionally, by driving the dynamics of the vortex core by a non-resonant rf field or current we demonstrate that the 1/f noise can be further decreased. The ability to reduce the 1/f low-frequency noise in vortex-based devices by leveraging their spin-transfer dynamics thus enhances their applicability in the magnetic sensors' landscape.

The correlation of phase fluctuations in any type of oscillator fundamentally defines its spectral shape. However, in nonlinear oscillators, such as spin torque nano oscillators, the frequency spectrum can become particularly complex. This is specifically true when not only considering thermal but also colored $1/f$ flicker noise processes, which are crucial in the context of the oscillator's long term stability. In this study, we address the frequency spectrum of spin torque oscillators in the regime of large-amplitude steady oscillations experimentally and as well theoretically. We particularly take both thermal and flicker noise into account. We perform a series of measurements of the phase noise and the spectrum on spin torque vortex oscillators, notably varying the measurement time duration. Furthermore, we develop the modelling of thermal and flicker noise in Thiele equation based simulations. We also derive the complete phase variance in the framework of the nonlinear auto-oscillator theory and deduce the actual frequency spectrum. We investigate its dependence on the measurement time duration and compare with the experimental results. Long term stability is important in several of the recent applicative developments of spin torque oscillators. This study brings some insights on how to better address this issue.

The brain naturally binds events from different sources in unique concepts. It is hypothesized that this process occurs through the transient mutual synchronization of neurons located in different regions of the brain when the stimulus is presented. This mechanism of binding through synchronization can be directly implemented in neural networks composed of coupled oscillators. To do so, the oscillators must be able to mutually synchronize for the range of inputs corresponding to a single class, and otherwise remain desynchronized. Here we show that the outstanding ability of spintronic nano-oscillators to mutually synchronize and the possibility to precisely control the occurrence of mutual synchronization by tuning the oscillator frequencies over wide ranges allows pattern recognition. We demonstrate experimentally on a simple task that three spintronic nano-oscillators can bind consecutive events and thus recognize and distinguish temporal sequences. This work is a step forward in the construction of neural networks that exploit the non-linear dynamic properties of their components to perform brain-inspired computations.

Modulation of a spin-torque oscillator (STO) signal based on a magnetic tunnel junction (MTJ) with perpendicularly magnetized free layer is investigated. Magnetic field inductive loop was created during MTJ fabrication process, which enables microwave field application during STO operation. The frequency modulation by the microwave magnetic field of up to 3 GHz is explored, showing a potential for application in high-data-rate communication technologies. Moreover, an inductive loop is used for self-synchronization of the STO signal, which after field-locking exhibits significant improvement of the linewidth and oscillation power., Comment: 4 pages, 5 figures

Low frequency noise close to the carrier remains little explored in spin torque nano oscillators. However, it is crucial to investigate as it limits the oscillator's frequency stability. This work addresses the low offset frequency flicker noise of a TMR-based spin-torque vortex oscillator in the regime of large amplitude steady oscillations. We first phenomenologically expand the nonlinear auto-oscillator theory aiming to reveal the properties of this noise. We then present a thorough experimental study of the oscillator's $1/f$ flicker noise and discuss the results based on the theoretical predictions. Hereby, we connect the oscillator's nonlinear dynamics with the concept of flicker noise and furthermore refer to the influence of a standard $1/f$ noise description based on the Hooge formula, taking into account the non-constant magnetic oscillation volume, which contributes to the magnetoresistance., Comment: 10 pages

We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystal structure. We observe a high magnetoresistance ratio up to 96% at room temperature (RT) and find that these MTJs have asymmetric current-voltage characteristics, and their rectifying performances are largely dependent on the magnetization alignments of the Fe electrodes. Diode responsibilities at a zero-bias voltage ($\beta_{0}$), which is an important performance index for harvesting applications, are observed up to 1.3 A/W at RT in the antiparallel alignment of the magnetizations while maintaining rather low resistance-area (RA) products (a few tens of k${\Omega\mu}$m$^2$). Even with the same top and bottom electrodes (Fe), the obtained $\beta_{0}$ values are comparable to those of reported high-performance tunnel diodes consisting of amorphous bilayer tunnel barriers with polycrystalline dissimilar electrodes. This strongly suggests that the epitaxial ZnO/MgO bilayer tunnel barrier is effective for enhancing the $\beta_{0}$ without significant increase in the RA. In addition, we demonstrate that a zero-bias anomaly in thetunnel conductance, which originates from the magnon excitations at the Fe/barrier interfaces, plays a crucial role in observed spin-dependent diode performance. The results indicate that a fully epitaxial MTJ with a bilayer tunnel barrier is a promising candidate to establish a high-performance high-frequency rectifying system., Comment: 34 pages, 7 figures

Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on the W buffer and a post-annealing process at different temperatures. The PMA energy as well as the magnetization damping are determined by analysing field-dependent FMR signals in different field geometries. An optimized MTJ structure enabled excitation of V-FMR at frequencies exceeding 30 GHz. The macrospin modelling is used to analyse the field- and angular-dependence of the V-FMR signal and to support experimental magnetization damping extraction., Comment: Manuscript containing 4 pages and 4 figures

Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed switching scheme is not the toggle switching but the deterministic switching where the magnetic state is determined by the polarity of the applied voltage pulse. The mechanism and conditions for the switching are clarified. The results provide a fast and low-power writing method for magnetoresistive random access memories., Comment: 6 pages, 6 figures

The reservoir computing neural network architecture is widely used to test hardware systems for neuromorphic computing. One of the preferred tasks for bench-marking such devices is automatic speech recognition. However, this task requires acoustic transformations from sound waveforms with varying amplitudes to frequency domain maps that can be seen as feature extraction techniques. Depending on the conversion method, these may obscure the contribution of the neuromorphic hardware to the overall speech recognition performance. Here, we quantify and separate the contributions of the acoustic transformations and the neuromorphic hardware to the speech recognition success rate. We show that the non-linearity in the acoustic transformation plays a critical role in feature extraction. We compute the gain in word success rate provided by a reservoir computing device compared to the acoustic transformation only, and show that it is an appropriate benchmark for comparing different hardware. Finally, we experimentally and numerically quantify the impact of the different acoustic transformations for neuromorphic hardware based on magnetic nano-oscillators., Comment: 13 pages, 5 figures

The voltage-controlled magnetic anisotropy (VCMA) effect in FeB and FeB/W films was measured by four independent methods. All measurements are consistent and show the same tendency. The coercive field, Hall angle, anisotropy field, the magnetization switching time and retention time linearly decrease when the gate voltage increases and they linearly increase when the gate voltage decreases., Comment: 5 pages

Spin-torque nano-oscillators can emulate neurons at the nanoscale. Recent works show that the non-linearity of their oscillation amplitude can be leveraged to achieve waveform classification for an input signal encoded in the amplitude of the input voltage. Here we show that the frequency and the phase of the oscillator can also be used to recognize waveforms. For this purpose, we phase-lock the oscillator to the input waveform, which carries information in its modulated frequency. In this way we considerably decrease amplitude, phase and frequency noise. We show that this method allows classifying sine and square waveforms with an accuracy above 99% when decoding the output from the oscillator amplitude, phase or frequency. We find that recognition rates are directly related to the noise and non-linearity of each variable. These results prove that spin-torque nano-oscillators offer an interesting platform to implement different computing schemes leveraging their rich dynamical features.

Spin-transfer torques (STTs) can be exploited in order to manipulate the magnetic moments of nanomagnets, thus allowing for new consumer-oriented devices to be designed. Of particular interest here are tuneable radio-frequency (RF) oscillators for wireless communication. Currently, the structure that maximizes the output power is an Fe/MgO/Fe-type magnetic tunnel junction (MTJ) with a fixed layer magnetized in the plane of the layers and a free layer magnetized perpendicular to the plane. This structure allows for most of the tunnel magnetoresistance (TMR) to be converted into output power. Here, we experimentally and theoretically demonstrate that the main mechanism sustaining steady-state precession in such structures is the angular dependence of the magnetoresistance. The TMR of such devices is known to exhibit a broken-linear dependence versus the applied bias. Our results show that the TMR bias dependence effectively quenches spin-transfer-driven precession and introduces a non-monotonic frequency dependence at high applied currents. Thus we expect the bias dependence of the TMR to have an even more dramatic effect in MTJs with Mn-Ga-based free layers, which could be used to design wireless oscillators extending towards the THz gap, but have been experimentally shown to exhibit a non-trivial TMR bias dependence., Comment: Manuscript: 13 pages, 5 figures; Supplementary Information: 6 pages, 5 figures. The Manuscript and Supplementary Information submitted to Scientific Reports

Substantial evidence indicates that the brain uses principles of non-linear dynamics in neural processes, providing inspiration for computing with nanoelectronic devices. However, training neural networks composed of dynamical nanodevices requires finely controlling and tuning their coupled oscillations. In this work, we show that the outstanding tunability of spintronic nano-oscillators can solve this challenge. We successfully train a hardware network of four spin-torque nano-oscillators to recognize spoken vowels by tuning their frequencies according to an automatic real-time learning rule. We show that the high experimental recognition rates stem from the high frequency tunability of the oscillators and their mutual coupling. Our results demonstrate that non-trivial pattern classification tasks can be achieved with small hardware neural networks by endowing them with non-linear dynamical features: here, oscillations and synchronization. This demonstration is a milestone for spintronics-based neuromorphic computing.

Low-energy random number generation is critical for many emerging computing schemes proposed to complement or replace von Neumann architectures. However, current random number generators are always associated with an energy cost that is prohibitive for these computing schemes. In this paper, we introduce random number bit generation based on specific nanodevices: superparamagnetic tunnel junctions. We experimentally demonstrate high quality random bit generation that represents orders-of-magnitude improvements in energy efficiency compared to current solutions. We show that the random generation speed improves with nanodevice scaling, and investigate the impact of temperature, magnetic field and crosstalk. Finally, we show how alternative computing schemes can be implemented using superparamagentic tunnel junctions as random number generators. These results open the way for fabricating efficient hardware computing devices leveraging stochasticity, and highlight a novel use for emerging nanodevices., Comment: Supplementary Materials provided

Neurons in the brain behave as non-linear oscillators, which develop rhythmic activity and interact to process information. Taking inspiration from this behavior to realize high density, low power neuromorphic computing will require huge numbers of nanoscale non-linear oscillators. Indeed, a simple estimation indicates that, in order to fit a hundred million oscillators organized in a two-dimensional array inside a chip the size of a thumb, their lateral dimensions must be smaller than one micrometer. However, despite multiple theoretical proposals, there is no proof of concept today of neuromorphic computing with nano-oscillators. Indeed, nanoscale devices tend to be noisy and to lack the stability required to process data in a reliable way. Here, we show experimentally that a nanoscale spintronic oscillator can achieve spoken digit recognition with accuracies similar to state of the art neural networks. We pinpoint the regime of magnetization dynamics leading to highest performance. These results, combined with the exceptional ability of these spintronic oscillators to interact together, their long lifetime, and low energy consumption, open the path to fast, parallel, on-chip computation based on networks of oscillators.

In neuroscience, population coding theory demonstrates that neural assemblies can achieve fault-tolerant information processing. Mapped to nanoelectronics, this strategy could allow for reliable computing with scaled-down, noisy, imperfect devices. Doing so requires that the population components form a set of basis functions in terms of their response functions to inputs, offering a physical substrate for calculating. For this purpose, the responses of the nanodevices should be non-linear, and each tuned to different values of the input. These strong requirements have prevented a demonstration of population coding with nanodevices. Here, we show that nanoscale magnetic tunnel junctions can be assembled to meet these requirements. We demonstrate experimentally that a population of nine junctions can implement a basis set of functions, providing the data to achieve, for example, the generation of cursive letters. We design hybrid magnetic-CMOS systems based on interlinked populations of junctions and show that they can learn to realize non-linear variability-resilient transformations with a low imprint area and low power., Comment: 5 figures

Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a number of applications such as multilevel non-volatile memories and artificial nano-synapses, which are the focus of this work. A key point towards the development of large scale memristive neuromorphic hardware is to build these neural networks with a memristor technology compatible with the best candidates for the future mainstream non-volatile memories. Here we show the first experimental achievement of a memristor compatible with Spin-Torque Magnetic Random Access Memory. The resistive switching in our spin-torque memristor is linked to the displacement of a magnetic domain wall by spin-torques in a perpendicularly magnetized magnetic tunnel junction. We demonstrate that our magnetic synapse has a large number of intermediate resistance states, sufficient for neural computation. Moreover, we show that engineering the device geometry allows leveraging the most efficient spin torque to displace the magnetic domain wall at low current densities and thus to minimize the energy cost of our memristor. Our results pave the way for spin-torque based analog magnetic neural computation., Comment: 9 pages, 3 figures

We report on the temperature and layer thickness variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements reveal dissimilar temperature evolutions of longitudinal and transverse effective magnetic field components. The transverse effective field changes sign at 250 K for a 2 nm thick W buffer layer, indicating a much stronger contribution from interface spin-orbit interactions compared to, for example, Ta. Transmission electron microscopy measurements reveal that considerable interface mixing between W and CoFeB is primarily responsible for this effect., Comment: 4 pages, 5 figures

The spin-torque in magnetic tunnel junctions possesses two components that both depend on the applied voltage. Here, we develop a new method for the accurate extraction of this bias-dependence from experiments over large voltage ranges. We study several junctions with different magnetic layer structures of the top electrode. Our results obtained on junctions with symmetric CoFeB electrodes agree well with theoretical calculations. The bias-dependences of asymmetric samples, with top electrodes containing NiFe, however, are twisted compared to the quadratic form generally assumed. Our measurements reveal the complexity of spin-torque mechanisms at large bias.

We use spin-torque resonance to probe simultaneously and separately the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Thanks to the large associated resistance variations we are able to analyze quantitatively the resonant properties of these single nanoscale magnetic objects. In particular, we find that the magnetic damping of both domains and domain walls is doubled compared to the damping value of their host magnetic layer. We estimate the contributions to damping arising from dipolar couplings between the different layers in the junction and from the intralayer spin pumping effect. We find that they cannot explain the large damping enhancement that we observe. We conclude that the measured increased damping is intrinsic to large amplitudes excitations of spatially localized modes or solitons such as vibrating or propagating domain walls

By investigating thoroughly the tunable behavior of coupled modes, we highlight how it provides new means to handle the properties of spin transfer nano-oscillators. We first demonstrate that the main features of the microwave signal associated with coupled vortex dynamics i.e. frequency, spectral coherence, critical current, mode localization, depends drastically on the relative vortex core polarities. Secondly we report a large reduction of the nonlinear linewidth broadening obtained by changing the effective damping through the control of the core configuration. Such a level of control on the nonlinear behavior reinforces our choice to exploit the microwave properties of collective modes for applications of spintronic devices in novel generation of integrated telecommunication devices.

We present an experimental study of phase-locking in a stochastic magnetic oscillator. The system comprises a magnetic tunnel junction with a superparamagnetic free layer, whose magnetization dynamics is driven with spin torques through an external periodic driving current. We show that synchronization of this stochastic oscillator to the input current is possible for current densities below $3 \times 10^6$ A/cm$^2$, and occurs for input frequencies lower than the natural mean frequency of the stochastic oscillator. We show that such injection-locking is robust and leads to a drastic reduction in the phase diffusion of the stochastic oscillator, despite the presence of a frequency mismatch between the oscillator and the excitation.

We investigate experimentally and analytically the impact of thermal noise on the sustained gyrotropic mode of vortex magnetization in spin transfer nano-oscillators and its consequence on the linewidth broadening due to the different nonlinear contributions. Performing some time domain measurements, we are able to extract separately the phase noise and the amplitude noise at room temperature for several values of dc current and perpendicular field. For a theoretical description of the experiments, we extend the general model of nonlinear auto-oscillators to the case of vortex core dynamics and provide some analytical expressions of the response-to-noise of the system as the coupling coefficient between the phase and the amplitude of the vortex core dynamics due to the nonlinearities. From the analysis of our experimental results, we demonstrate the major role of the amplitude-to-phase noise conversion on the linewidth broadening, and propose some solutions to improve the spectral coherence of vortex based spin transfer nano-oscillators., Comment: 9 pages, 4 figures

We present time-resolved measurements of the displacement of magnetic domain-walls (DWs) driven by vertical spin-polarized currents in track-shaped magnetic tunnel junctions. In these structures we observe very high DW velocities (600 m/s) at current densities below $10^7 A/cm^2$. We show that the efficient spin-transfer torque combined with a short propagation distance allows to avoid the Walker breakdown process, and achieve deterministic, reversible and fast ($\approx$ 1 ns) DW-mediated switching of magnetic tunnel junction elements, which is of great interest to the implementation of fast DW-based spintronic devices.

The low-frequency and shot noises in spin-valve CoFeB/MgO/CoFeB magnetic tunneling junctions were studied at low temperature. The measured 1/f noise around the magnetic hysteresis loops of the free layer indicates that the main origin of the 1/f noise is the magnetic fluctuation, which is discussed in terms of a fluctuation-dissipation relation. Random telegraph noise (RTN) is observed to be symmetrically enhanced in the hysteresis loop with regard to the two magnetic configurations. We found that this enhancement is caused by the fluctuation between two magnetic states in the free layer. Although the 1/f noise is almost independent of the magnetic configuration, the RTN is enhanced in the antiparallel configuration. These findings indicate the presence of spin-dependent activation of RTN. Shot noise reveals the spin-dependent coherent tunneling process via a crystalline MgO barrier., Comment: 10 pages, 9 figures

We report the successful electrical creation of spin polarization in p-type Si at room temperature by using an epitaxial MgO(001) tunnel barrier and Fe(001) electrode. Reflection high-energy electron diffraction observations revealed that epitaxial Fe/MgO(001) tunnel contacts can be grown on a (2 x 1) reconstructed Si surface whereas tunnel contacts grown on the (1 x 1) Si surface were polycrystalline. Transmission electron microscopy images showed a more flat interface for the epitaxial Fe/MgO/Si compared to that of the polycrystalline structure. For the Fe/MgO/p-Si devices, the Hanle and inverted Hanle effects were clearly observed at 300 K by using a three-terminal configuration, proving that spin polarization can be induced in the Si at room temperature. Effective spin lifetimes deduced from the width of the Hanle curve were 95 +/- 6 ps and 143 +/- 10 ps for the samples with polycrystalline and epitaxial MgO tunnel contacts, respectively. The observed difference can be qualitatively explained by the local magnetic field induced by the larger roughness of the interface of the polycrystalline sample. The sample with epitaxial Fe/MgO tunnel contact showed higher magnitude of the spin accumulation with a nearly symmetric behavior with respect to the bias polarity whereas that of the polycrystalline MgO sample exhibited a quite asymmetric evolution. This might be attributed to the higher degree of spin polarization of the epitaxial Fe/MgO(001) tunnel contact, which acts as a spin filter. Our experimental results suggest that an epitaxial MgO barrier is beneficial for creating spins in Si., Comment: Paper presented at SPIE Nanoscience + Engineering, Spintronics V session in San Diego, US on August 13th, 2012

We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the anti-parallel configuration is close to unity, it is observed to be typically 0.91\pm0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime., Comment: 3 pages, 3 figures