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The induced Pt magnetization in a Pt/Co/Pt thin film structure is studied. The normally nonmagnetic Pt acquires a magnetic moment due to the magnetic proximity effect at the Co–Pt interfaces. Element specific Pt structural and magnetic properties are characterized by synchrotron-based resonant x-ray reflectivity and x-ray resonant magnetic reflectivity measurements. An advanced analysis method based on Bayesian inference is used for model fitting of the x-ray data. Using this method, we retrieve the best fit values of material parameters (e.g., thickness, interfacial roughness) from the data. Analysis of x-ray reflectivity data of this specific system shows that the Pt magnetization and Co–Pt interfacial roughness is significantly different between the top and bottom Pt layers, with both values being larger in the top Pt. The successful application of this Bayesian method to study the magnetic and structural properties of a thin film system demonstrates its effectiveness for x-ray reflectivity data analysis.

Two-dimensional triangular-lattice antiferromagnets are predicted under some conditions to exhibit a quantum spin liquid ground state with no energy barrier to create emergent, fractionalized spinon excitations that carry spin but no charge. Materials that realize this kind of spin liquid are expected to have a low-energy behaviour described by a spinon Fermi surface. Directly imaging the resulting spinons, however, is difficult due to their chargeless nature. Here we use scanning tunnelling spectroscopy to image density waves consistent with the predictions of spinon density modulation arising from a spinon Fermi surface instability in single-layer 1T-TaSe2. We confirm the existence of a triangular lattice of localized spins in this material by contacting it with a metallic 1H-TaSe2 substrate and measuring the Kondo effect. Spectroscopic imaging of isolated single-layer 1T-TaSe2 reveals long-wavelength super-modulations at Hubbard band energies, consistent with the predicted behaviour of itinerant spinons. These super-modulations allow the direct experimental measurement of the spinon Fermi wavevector, in good agreement with theoretical predictions for a two-dimensional quantum spin liquid. Some quantum spin liquids are expected to have an effective Fermi surface of fractionalized spinon excitations. The two-dimensional spin liquid candidate 1T-TaSe2 has charge density modulations that may be caused by an unstable spinon Fermi surface.

Antiferromagnetic insulators offer strategic advantages in spintronic applications because of their negligible stray fields and ultrafast magnetic dynamics. Control of their magnetization and readout of their magnetic state are essential for these applications but remain challenging. Here we report the electrical detection of room-temperature magnetization switching in the canted antiferromagnetic insulator LaFeO3, capped with a Pt or W overlayer. The observation of a large magneto-thermovoltage with an in-plane temperature gradient suggests that the mechanism is the swapping of spin currents in the antiferromagnet. This effect provides a sensitive electrical probe of the tiny net magnetization in the insulator, which can be manipulated by a magnetic field on the order of 10 mT. Our results highlight a new material class of insulating canted antiferromagnets for spintronics and spin caloritronics and suggests a method for the electrical readout of magnetic signals in an antiferromagnetic insulator. Post-print / Final draft

The interconversion of charge and spin currents via spin-Hall effect is essential for spintronics. Energy-efficient and deterministic switching of magnetization can be achieved when spin polarizations of these spin currents are collinear with the magnetization. However, symmetry conditions generally restrict spin polarizations to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry is reduced. Here, we show control of the spin polarization direction by using a non-collinear antiferromagnet Mn3GaN, in which the triangular spin structure creates a low magnetic symmetry while maintaining a high crystalline symmetry. We demonstrate that epitaxial Mn3GaN/permalloy heterostructures can generate unconventional spin-orbit torques at room temperature corresponding to out-of-plane and Dresselhaus-like spin polarizations which are forbidden in any sample with two-fold rotational symmetry. Our results demonstrate an approach based on spin-structure design for controlling spin-orbit torque, enabling high-efficient antiferromagnetic spintronics., In the typical spin-hall effect, spin-current, charge current, and spin polarisation are all mutually perpendicular, a feature enforced by symmetry. Here, using an anti-ferromagnet with a triangular spin structure, the authors demonstrate a spin-hall effect without a perpendicular spin alignment.

Understanding metal-to-insulator phase transitions in solids has been a keystone not only for discovering novel physical phenomena in condensed matter physics but also for achieving scientific breakthroughs in materials science. In this work, we demonstrate that the transport properties (i.e., resistivity and transition temperature) in the metal-to-insulator transitions of perovskite nickelates are tunable via the epitaxial heterojunctions of LaNiO3 and NdNiO3 thin films. A mismatch in the oxygen coordination environment and interfacial octahedral coupling at the oxide heterointerface allows us to realize an exotic phase that is unattainable in the parent compound. With oxygen vacancy formation for strain accommodation, the topmost LaNiO3 layer in LaNiO3/NdNiO3 bilayer thin films is structurally engineered and it electrically undergoes a metal-to-insulator transition that does not appear in metallic LaNiO3. Modification of the NdNiO3 template layer thickness provides an additional knob for tailoring the tilting angles of corner-connected NiO6 octahedra and the linked transport characteristics further. Our approaches can be harnessed to tune physical properties in complex oxides and to realize exotic physical phenomena through oxide thin-film heterostructuring.

Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation which is facilitated by the presence of various crystal symmetries for compositions near a morphotropic phase boundary (MPB). Relaxor-ferroelectric thin films, which are necessary for low-voltage applications, suffer a reduction in their piezoelectric response due to clamping by the passive substrate. To understand the microscopic behavior of this adverse phenomenon, we employ AC electric field driven in-operando synchrotron x-ray diffraction (XRD) on patterned device structures to investigate the piezoelectric domain behavior under an electric field for both a clamped (001) PMN-PT thin film on Si and a (001) PMN-PT membrane released from its substrate. In the clamped film, the substrate inhibits the field induced rhombohedral (R) to tetragonal (T) phase transition resulting in a reversible R to Monoclinic (M) transition with a reduced longitudinal piezoelectric coefficient d33 < 100 pm/V. Releasing the film from the substrate results in recovery of the R to T transition and results in a d33 > 1000 pm/V. Using diffraction with spatial mapping, we find that lateral constraints imposed by the boundary between active and inactive material also inhibits the R to T transition. Phase-field calculations on both clamped and released PMN-PT thin films simulate our experimental findings. Resolving the suppression of thin film piezoelectric response is critical to their application in piezo-driven technologies.

The relationship between proximity-induced magnetism (PIM) at the heavy metal/ferromagnet interface and spin-transport across such interfaces has generated significant debate. To investigate the link between the two, element specific x-ray magnetic circular dichroism and ferromagnetic resonance measurements were made on the same CoFe/Au/Pt and NiFe/Au/Pt thin film samples with varying Au thickness, with complementary SIMS analysis, which shows evidence of Ni diffusion from NiFe into the Pt. An approximately linear relationship is observed between the magnitude of Pt PIM and magnitude of damping enhancement in both systems. The results demonstrate that electronic hybridization of the heavy metal and ferromagnet is required for a full understanding of damping enhancement and interfacial spin-transport for spintronic devices.

Of all parent compounds of iron-based high-temperature superconductors, ${\mathrm{EuFe}}_{2}{\mathrm{As}}_{2}$ exhibits by far the largest magnetostructural coupling due to the sizable biquadratic interaction between Eu and Fe moments. While the coupling between Eu antiferromagnetic (AFM) order and Fe structural/AFM domains enables rapid field detwinning, this prevents simple magnetometry measurements from extracting the critical fields of the Eu metamagnetic transition. Here, we measure these critical fields by combining x-ray magnetic circular dichroism spectroscopy with in situ tunable uniaxial stress and applied magnetic field. The combination of two tuning knobs allows us to separate the stress detwinning of structural domains from the field-induced reorientation of Eu moments. Intriguingly, we find a spin-flip transition which can only result from a strongly anisotropic interaction between Eu planes. We argue that this anisotropic exchange is a consequence of the strong anisotropy in the magnetically ordered Fe layer, which presents a form of higher-order coupling between Eu and Fe magnetism.

In this study, we employ bulk electronic properties characterization and x-ray scattering/spectroscopy techniques to map the structural, magnetic and electronic properties of (Eu$_{1-x}$Ca$_{x}$)$_{2}$Ir$_{2}$O$_{7}$ as a function of Ca-doping. As expected, the metal-insulator transition temperature, $T_{MIT}$, decreases with Ca-doping until a metallic state is realized down to 2 K. In contrast, $T_{AFM}$ becomes decoupled from the MIT and (likely short-range) AFM order persists into the metallic regime. This decoupling is understood as a result of the onset of an electronically phase separated state, the occurrence of which seemingly depends on both synthesis method and rare earth site magnetism. PDF analysis suggests that electronic phase separation occurs without accompanying chemical phase segregation or changes in the short-range crystallographic symmetry while synchrotron x-ray diffraction confirms that there is no change in the long-range crystallographic symmetry. X-ray absorption measurements confirm the $J_{eff}$ = 1/2 character of (Eu$_{1-x}$Ca$_{x}$)$_{2}$Ir$_{2}$O$_{7}$. Surprisingly these measurements also indicate a net electron doping, rather than the expected hole doping, indicating a compensatory mechanism. Lastly, XMCD measurements show a weak Ir magnetic polarization that is largely unaffected by Ca-doping., 18 pages, 10 figures

The anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which it is originally absent by combining the effects of symmetry breaking, spin orbit interaction and proximity-induced magnetism. In particular, we find a strikingly large AHE that emerges at the interface between a ferromagnetic manganite (La_(0.7)Sr_(0.3)MnO_3) and a semimetallic iridate (SrIrO_3). It is intrinsic and originates in the proximity-induced magnetism present in the narrow bands of strong spin-orbit coupling material SrIrO_3, which yields values of anomalous Hall conductivity and Hall angle as high as those observed in bulk transition-metal ferromagnets. These results demonstrate the interplay between correlated electron physics and topological phenomena at interfaces between 3d ferromagnets and strong spin-orbit coupling 5d oxides and trace an exciting path towards future topological spintronics at oxide interfaces. The anomalous Hall effect (AHE) occurs in ferromagnets caused by intrinsic and extrinsic mechanisms. Here, Yoo et al. report large anomalous Hall conductivity and Hall angle at the interface between a ferromagnet La_(0.7)Sr_(0.3M)nO_3 and a semimetallic SrIrO_3, due to the interplay between correlated physics and topological phenomena.

As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a new positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO3/SrTiO3 superlattice. Its size is particularly large in the high-temperature insulating paramagnetic phase near the N\'eel transition. This novel magnetoresistance originates from a collective charge response to the large longitudinal spin fluctuations under a linear coupling between the external magnetic field and the staggered magnetization enabled by strong spin-orbit interaction. Our results demonstrate a magnetic control of the binding energy of the fluctuating particle-hole pairs in the Slater-Mott crossover regime analogous to the BCS-to-Bose-Einstein condensation crossover of ultracold-superfluids., Comment: Accepted by Nature communications

In this study, we employ bulk electronic properties characterization and x-ray scattering/spectroscopy techniques to map the structural, magnetic and electronic properties of (Eu

The proximity-induced moment (PIM) in heavy metal layers may play a significant role in heterostructured spintronic systems. In particular, the PIM of a heavy metal adjacent to a magnetic layer has been linked to interfacial spin transport behavior. Element-resolved x-ray magnetic measurements were used to investigate PIM in Pt layered with two different rare-earth (RE):3d transition-metal (TM) ferrimagnetic alloys in which the net moment was dominated by either the RE or the TM at room temperature. We observed significant PIM in Pt confined to a 2-nm interfacial region for Pt/Co77Gd23 and Pt/(Fe50Co50 )77Gd23 and, in both cases, the PIM was parallel to the TM sublattice rather than the RE or the net moment. Our results highlight the prominence of the d − d mediated interactions between the Pt and the constituents of the ferrimagnetic RE:TM alloys over the net macroscopic moment.

Chiral interactions in magnetic systems can give rise to rich physics manifested, for example, as nontrivial spin textures. The foremost interaction responsible for chiral magnetism is the Dzyaloshinskii-Moriya interaction (DMI), resulting from inversion symmetry breaking in the presence of strong spin-orbit coupling. However, the atomistic origin of DMIs and their relationship to emergent electrodynamic phenomena, such as topological Hall effect (THE), remain unclear. Here, we investigate the role of interfacial DMIs in 3d-5d transition metal-oxide-based LaMnO3/SrIrO3 superlattices on THE from a chiral spin texture. By additively engineering the interfacial inversion symmetry with atomic-scale precision, we directly link the competition between interfacial collinear ferromagnetic interactions and DMIs to an enhanced THE. The ability to control the DMI and resulting THE points to a pathway for harnessing interfacial structures to maximize the density of chiral spin textures useful for developing high-density information storage and quantum magnets for quantum information science.

We have elucidated the spin, lattice, charge, and orbital coupling mechanism underlying the multiferroic character in tensile-strained $\mathrm{EuTi}{\mathrm{O}}_{3}$ films. Symmetry determined by oxygen octahedral tilting shapes the hybridization between the Eu $4f$ and the Ti $3d$ orbitals, and this inhibits predicted Ti displacement proper ferroelectricity. Instead, phonon softening emerges at low temperatures within the pseudocube (110) plane, orthogonal to the anticipated ferroelectric polarization symmetry. Additionally, the magnetic anisotropy is determined by orbital distortion through hybridization between the Ti $3d$ and the typically isotropic $\mathrm{E}{\mathrm{u}}^{2+}\phantom{\rule{4pt}{0ex}}4f$ states. This unique scenario demonstrates the critical role symmetry plays in the coupling of order parameters defining multiferroic behavior.

We report on the epitaxial strain-driven electronic and antiferromagnetic modulations of a pseudospin-half square-lattice realized in superlattices of (SrIrO_{3})_{1}/(SrTiO_{3})_{1}. With increasing compressive strain, we find the low-temperature insulating behavior to be strongly suppressed with a corresponding systematic reduction of both the Neel temperature and the staggered moment. However, despite such a suppression, the system remains weakly insulating above the Neel transition. The emergence of metallicity is observed under large compressive strain but only at temperatures far above the Neel transition. These behaviors are characteristics of the Slater-Mott crossover regime, providing a unique experimental model system of the spin-half Hubbard Hamiltonian with a tunable intermediate coupling strength.

Correlated electrons give rise to both exotic electronic and magnetic properties in rare-earth nickelates. Here we present evidence of the interfacial coupling between two nickelate systems, EuNiO_{3} (ENO) and LaNiO_{3} (LNO), with different electronic and magnetic properties but with compatible structural registry giving rise to an electrostructural transition, unobserved in each constituent. Nominally, LNO remains in a paramagnetic-metallic R3[over ¯]c phase while orthorhombic ENO undergoes antiferromagnetic and insulating transitions. However, the ENO/LNO heterostructure displays a uniform rotational symmetry set by an entwined interface. This leads to an anomalous reduction of bond disproportionation in the ENO layer through the metal to insulator transition and concomitantly charge disproportionation opens the gap accompanied by antiferromagnetic ordering. Our results resolve a long-standing question in the physics of rare-earth nickelates, herein demonstrating that charge and bond disproportionation are competing mechanisms for the charge localization process in the rare-earth nickelate system.

Oxygen vacancies in complex oxides are indispensable for information and energy technologies. There are several means to create oxygen vacancies in bulk materials. However, the use of ionic interfaces to create oxygen vacancies has not been fully explored. Herein, we report an oxide nanobrush architecture designed to create high-density interfacial oxygen vacancies. An atomically well-defined (111) heterointerface between the fluorite CeO2 and the bixbyite Y2O3 is found to induce a charge modulation between Y3+ and Ce4+ ions enabled by the chemical valence mismatch between the two elements. Local structure and chemical analyses, along with theoretical calculations, suggest that more than 10% of oxygen atoms are spontaneously removed without deteriorating the lattice structure. Our fluorite–bixbyite nanobrush provides an excellent platform for the rational design of interfacial oxide architectures to precisely create, control, and transport oxygen vacancies critical for developing ionotronic and memristive devices for advanced energy and neuromorphic computing technologies., Oxygen vacancies can impart interesting properties in complex oxides, but specific architectures designed to create high-density oxygen vacancies are largely unknown. Here the authors report a fluorite-bixbyite nanobrush platform to tune interfacial oxygen and show that an atomically well-defined heterointerface can induce charge modulation.

Rare-earth pyrochlore iridates $(R{E}_{2}\mathrm{I}{\mathrm{r}}_{2}{\mathrm{O}}_{7})$ consist of two interpenetrating cation sublattices, the $\mathit{RE}$ with highly frustrated magnetic moments, and the iridium with extended conduction orbitals significantly mixed by spin-orbit interactions. The coexistence and coupling of these two sublattices create a landscape for discovery and manipulation of quantum phenomena such as the topological Hall effect, massless conduction bands, and quantum criticality. Thin films allow extended control of the material system via symmetry-lowering effects such as strain. While bulk $\mathrm{P}{\mathrm{r}}_{2}\mathrm{I}{\mathrm{r}}_{2}{\mathrm{O}}_{7}$ shows a spontaneous hysteretic Hall effect below 1.5 K, we observe the effect at elevated temperatures up to 15 K in epitaxial thin films on (111) yttria-stabilized zirconia (YSZ) substrates synthesized via solid-phase epitaxy. Similar to the bulk, the lack of observable long-range magnetic order in the thin films points to a topological origin. We use synchrotron-based element-specific x-ray diffraction and x-ray magnetic circular dichroism to compare powders and thin films to attribute the spontaneous Hall effect in the films to localization of the Ir moments. We link the thin-film Ir local moments to lattice distortions absent in the bulklike powders. We conclude that the elevated-temperature spontaneous Hall effect is caused by the topological effect originating either from the Ir or Pr sublattice, with interaction strength enhanced by the Ir local moments. This spontaneous Hall effect with weak net moment highlights the effect of vanishingly small lattice distortions as a means to discover topological phenomena in metallic frustrated magnetic materials.

Perovskite rhodates are characterized by intermediate strengths of both electronic correlation as well as spin-orbit coupling (SOC) and usually behave as moderately correlated metals. A recent publication [Phys. Rev. B 95, 245121 (2017)] on epitaxial ${\mathrm{SrRhO}}_{3}$ thin films reported a bad-metallic behavior and suggested the occurrence of antiferromagnetism below 100 K. We have further studied this ${\mathrm{SrRhO}}_{3}$ thin film by hard x-ray photoemission spectroscopy and found a very small density of states (DOS) at the Fermi level (${E}_{F}$), which is consistent with the previously reported bad-metallic behavior. However, the absence of DOS persists up to room temperature, which contradicts the explanation of antiferromagnetic transition at $\ensuremath{\sim}100$ K. We also employed electronic structure calculations within the framework of density functional theory and dynamical mean-field theory. In contrast to the photoemission results, our calculations indicate metallic behaviors of both bulk ${\mathrm{SrRhO}}_{3}$ and the ${\mathrm{SrRhO}}_{3}$ thin film, and a stronger correlation effect was observed in the thin film than that in the bulk. The calculated uniform magnetic susceptibility is substantially larger in the thin film than that in the bulk. We also investigated the role of SOC and found only a moderate modulation of the band structure. Hence SOC is not expected to significantly affect the electronic correlation in ${\mathrm{SrRhO}}_{3}$. Extrinsic effects of finite-thickness effects beyond our calculations and localization effects may play important roles to induce the negligible spectral weight at ${E}_{F}$.

Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and voltage-driven ion transfer, has been identified as a powerful means to achieve electric-field-controlled phase transformations. The class of transition metal oxides provide many potential candidates that present a strong response under electrolytic gating. However, very few show a reversible structural transformation at room-temperature. Here, we report the realization of a digitally synthesized transition metal oxide that shows a reversible, electric-field-controlled transformation between distinct crystalline phases at room-temperature. In superlattices comprised of alternating one-unit-cell of SrIrO3 and La0.2Sr0.8MnO3, we find a reversible phase transformation with a 7% lattice change and dramatic modulation in chemical, electronic, magnetic and optical properties, mediated by the reversible transfer of oxygen and hydrogen ions. Strikingly, this phase transformation is absent in the constituent oxides, solid solutions and larger period superlattices. Our findings open up this class of materials for voltage-controlled functionality., Many complex oxides already have rich functional behavior but oxide heterostructures can exhibit new emergent properties. Yi et al. show that LSMO/SIO superlattices have a reversible electric-field-controlled structural phase transition that is not present in the constituent materials.

In this work, we analyze the role of a thin Cr spacer between Fe and Gd layers on the structure and magnetic properties of a [Fe(35 Å)/Cr(tCr)/Gd(50 Å)/Cr(tCr)]12 superlattice. Samples without the Cr spacer (tCr = 0) and with a thin spacer (tCr = 4 Å) are investigated using X-ray diffraction, polarized neutron and resonance X-ray magnetic reflectometry, static magnetometry, magneto-optical Kerr effect, and ferromagnetic resonance techniques. Magnetic properties are studied experimentally in a wide temperature range 4–300 K and analyzed theoretically using numerical simulation on the basis of the mean-field model. We show that a reasonable agreement with the experimental data can be obtained considering temperature dependence of the effective field parameter in gadolinium layers. The analysis of the experimental data shows that besides a strong reduction of the antiferromagnetic coupling between Fe and Gd, the introduction of Cr spacers into Fe/Gd superlattice leads to modification of both structural and magnetic characteristics of the ferromagnetic layers. © 2018, Pleiades Publishing, Inc.

A fundamental difference between antiferromagnets and ferromagnets is the lack of linear coupling to a uniform magnetic field due to the staggered order parameter. Such coupling is possible via the Dzyaloshinskii-Moriya (DM) interaction but at the expense of reduced antiferromagnetic (AFM) susceptibility due to the canting-induced spin anisotropy. We solve this long-standing problem with a top-down approach that utilizes spin-orbit coupling in the presence of a hidden SU(2) symmetry. We demonstrate giant AFM responses to sub-Tesla external fields by exploiting the extremely strong two-dimensional critical fluctuations preserved under a symmetry-invariant exchange anisotropy, which is built into a square-lattice artificially synthesized as a superlattice of SrIrO3 and SrTiO3. The observed field-induced logarithmic increase of the ordering temperature enables highly efficient control of the AFM order. As antiferromagnets promise to afford switching speed and storage security far beyond ferromagnets, our symmetry-invariant approach unleashes the great potential of functional antiferromagnets., Comment: 3 figures

In materials where two or more ordering degrees of freedom are closely matched in their free energies, coupling between them, or multiferroic behavior can occur. These phenomena can produce a very rich phase behavior, as well as emergent phases that offer useful properties and opportunities to reveal novel phenomena in phase transitions. The ordered alloy FeRh undergoes an antiferromagnetic to ferromagnetic phase transition at ~375 K, which illustrates the interplay between structural and magnetic order mediated by a delicate energy balance between two configurations. We have examined this transition using a combination of high-resolution x-ray structural and magnetic imaging and comprehensive x-ray magnetic circular dichroism spectroscopy. We find that the transition proceeds via a defect-driven domain nucleation and growth mechanism, with significant return point memory in both the structural and magnetic domain configurations. The domains show evidence of inhibited growth after nucleation, resulting in a quasi-2nd order temperature behavior.

The depth-resolved magnetic configuration of a Ga0.97Mn0.03As/GaAs:Be multilayer with an antiferromagnetic interlayer exchange coupling was investigated using surface-sensitive soft x-ray resonant magnetic reflectivity (XRMR). We observed intriguing opposite increments in the XRMR intensities at the half-Bragg peak position between two different remanent states with opposite field sweep directions. A quantitative analysis shows that these opposite intensity increments result from two different anti-parallel spin configurations in such a way that the magnetization of top-most magnetic layer is pinned along the saturation magnetization direction before the remanent state. This surface pinning effect is important for understanding spin-dependent transport in semiconducting magnetic multilayers.

Single crystals of a honeycomb lattice antiferromagnet, ${\mathrm{Tb}}_{2}{\mathrm{Ir}}_{3}{\mathrm{Ga}}_{9}$, were synthesized, and the physical properties have been studied. From magnetometry, a long-range antiferromagnetic ordering at $\ensuremath{\approx}12.5$ K with highly anisotropic magnetic behavior was found. Neutron powder diffraction confirms that the Tb spins lie along the $\mathbf{a}$-axis, parallel to the shortest Tb-Tb contact. Two field-induced spin-flip transitions are observed when the field is applied parallel to this axis, separated by a plateau corresponding roughly to $M\ensuremath{\approx}{M}_{\mathrm{s}}/2$. Transport measurements show the resistivity to be metallic with a discontinuity at the onset of N\'eel order. Heat capacity shows a $\ensuremath{\lambda}$-like transition confirming the bulk nature of the magnetism. We propose a phenomenological spin Hamiltonian that describes the magnetization plateau as a result of strong Ising character arising from a quasidoublet ground state of the ${\mathrm{Tb}}^{3+}$ ion in a site of ${C}_{s}$ symmetry and expressing a significant bond-dependent anisotropy.

We report on the epitaxial strain-driven electronic and antiferromagnetic modulations of a pseudospin-half square-lattice realized in superlattices of (SrIrO_{3})_{1}/(SrTiO_{3})_{1}. With increasing compressive strain, we find the low-temperature insulating behavior to be strongly suppressed with a corresponding systematic reduction of both the Néel temperature and the staggered moment. However, despite such a suppression, the system remains weakly insulating above the Néel transition. The emergence of metallicity is observed under large compressive strain but only at temperatures far above the Néel transition. These behaviors are characteristics of the Slater-Mott crossover regime, providing a unique experimental model system of the spin-half Hubbard Hamiltonian with a tunable intermediate coupling strength.

Significance Heterojunctions between dissimilar materials provide an opportunity to generate emergent properties not present in their individual components. These properties are often linked to interfacial charge transfer, an important mechanism allowing one to access and control novel quantum states. Here, we have grown unit-cell scale superlattices composed of 5 d S r I r O 3 and 3 d L a N i O 3 . We have discovered a massive interfacial charge transfer from Ir to Ni, triggering dramatic electronic and magnetic reconstructions at the interface that suppress strong spin–orbit coupling effects normally present in the iridates. These findings call for careful evaluation and reinterpretation of experiments on spin–orbit-driven physics in thin films and heterostructures based on prototypical 5 d transition metal oxides.

Deliberate control of interface symmetry boosts chiral magnetism in spin-orbit–coupled oxide heterostructures., Chiral interactions in magnetic systems can give rise to rich physics manifested, for example, as nontrivial spin textures. The foremost interaction responsible for chiral magnetism is the Dzyaloshinskii-Moriya interaction (DMI), resulting from inversion symmetry breaking in the presence of strong spin-orbit coupling. However, the atomistic origin of DMIs and their relationship to emergent electrodynamic phenomena, such as topological Hall effect (THE), remain unclear. Here, we investigate the role of interfacial DMIs in 3d–5d transition metal-oxide-based LaMnO3/SrIrO3 superlattices on THE from a chiral spin texture. By additively engineering the interfacial inversion symmetry with atomic-scale precision, we directly link the competition between interfacial collinear ferromagnetic interactions and DMIs to an enhanced THE. The ability to control the DMI and resulting THE points to a pathway for harnessing interfacial structures to maximize the density of chiral spin textures useful for developing high-density information storage and quantum magnets for quantum information science.

This study explores a filling-controlled metal-insulator transition in the pyrochlore-based iridium oxide Nd${}_{2}$Ir${}_{2}$O${}_{7}$. Through measurements of the local site symmetry, average structure, and electronic properties, the authors comment on the interplay of the lattice, charge gap, and magnetism in this material. The work holds important implications for tuning this compound toward its anticipated quantum critical regime, which has been predicted to host a Weyl semimetal state.

National Science Foundation (U.S.) (Through Massachusetts Institute of Technology Materials Research Science and Engineering Center, DMR-1419807)

A research article describing the NAD-dependent mechanisms of heart failure and using NAD as therapy

Competitive sorption of Pb(II) and Zn(II) on Shewanella oneidensis MR-1 biofilm-coated single-crystal α-Al 2 O 3 (1 −1 0 2) and α-Fe 2 O 3 (0 0 0 1) surfaces was investigated using long-period X-ray standing wave-florescence yield (LP-XSW-FY) spectroscopy. In situ partitioning of aqueous Pb(II) and Zn(II) between the biofilms and underlying metal-oxide substrates was probed following exposure of these complex interfaces to equi-molar Pb and Zn solutions (0.01 M NaNO 3 as background electrolyte, pH = 6.0, and 3-h equilibration time). At higher Pb and Zn concentrations (⩾10 −5 M), more than 99% of these ions partitioned into the biofilms at S. oneidensis /α-Al 2 O 3 (1 −1 0 2)/water interfaces, which is consistent with the partitioning behavior of both Pb(II) or Zn(II) in single-metal-ion experiments. Thus, no apparent competitive effects were found in this system at these relatively high metal-ion concentrations. However, at lower equi-molar concentrations (⩽10 −6 M), Pb(II) and Zn(II) partitioning in the same system changed significantly compared to the single-metal-ion systems. The presence of Zn(II) decreased Pb(II) partitioning onto α-Al 2 O 3 (1 −1 0 2) substantially (∼52% to ∼13% at 10 −7 M, and ∼23% to ∼5% at 10 −6 M), whereas the presence of Pb(II) caused more Zn(II) to partition onto α-Al 2 O 3 (1 −1 0 2) surfaces (∼15% to ∼28% at 10 −7 M, and ∼1% to ∼7% at 10 −6 M). The higher observed partitioning of Zn(II) (∼28%) at the α-Al 2 O 3 (1 −1 0 2) surfaces compared to Pb(II) (∼13%) in the mixed-metal-ion systems at the lowest concentration (10 −7 M) suggests that Zn(II) is slightly favored over Pb(II) for sorption sites on α-Al 2 O 3 (1 −1 0 2) surfaces under our experimental conditions. Competitive sorption of Pb(II) and Zn(II) at S. oneidensis /α-Fe 2 O 3 (0 0 0 1)/water interfaces at equi-molar metal-ion concentrations of ⩽10 −6 M showed that the presence of Pb(II) ions decreased Zn(II) partitioning onto α-Fe 2 O 3 (0 0 0 1) significantly (∼45% to −7 M, and ∼41% to 3% at 10 −6 M), whereas adding Zn(II) caused only small changes in Pb(II) partitioning (∼59% to ∼47% at 10 −7 M, and ∼26% to ∼23% at 10 −6 M), suggesting that Pb(II) strongly outcompetes Zn(II) for sorption sites on S. oneidensis -coated α-Fe 2 O 3 (0 0 0 1) surfaces. Our study implies that caution should be taken when applying results obtained from partitioning studies of single-metal-ion systems to mixed-metal-ion systems at complex biofilm/mineral interfaces.

Microbial biofilms are often present as coatings on metal-oxide surfaces in natural and industrial environments and may induce significant changes in the partitioning behavior and speciation of aqueous metal ions, which in turn can impact their transport and fate. In this study, long-period X-ray standing wave-fluorescence yield (LP-XSW-FY) spectroscopy was used to measure under in situ conditions the partitioning of aqueous Pb(II) and Zn(II) between multilayer Shewanella oneidensis MR-1 biofilms and highly polished, oriented single-crystal surfaces of α-Al2O3 and α-Fe2O3 as a function of metal-ion concentration and time at pH 6.0. We show that after 3-h exposure time, Pb(II) binds preferentially to the α-Al2O3 (1–102) and α-Fe2O3 (0 0 0 1) surfaces at low Pb concentration ([Pb] = 10−7 M) and then increasingly partitions into the biofilm coatings at higher concentrations (10−6 to 10−4 M). In contrast, Zn(II) partitions preferentially into the biofilm coating for both surfaces at all Zn concentrations studied (10−7 to 10−4 M). In comparison, the α-Al2O3 (0 0 0 1) surface has a low affinity for both Pb(II) and Zn(II), and the biofilm coatings are the dominant sink for both ions. These findings suggest that in the presence of S. oneidensis biofilm coatings, α-Al2O3 (0 0 0 1) is the least reactive surface for Pb(II) and Zn(II) compared to α-Al2O3 (1–102) and α-Fe2O3 (0 0 0 1). They also show that Zn(II) has a lower affinity than Pb(II) for reactive sites on α-Al2O3 (1–102) and α-Fe2O3 (0 0 0 1) at [Me(II)] of 10−7 M; at 10−5 M, the bulk of the metal ions partition into the biofilm coatings. At longer exposure times (20–24 h), both Pb(II) and Zn(II) increasingly partition to the metal-oxide surfaces at [Me(II)] = 10−5 M and pH 6.0, indicating possible reaction/diffusion-controlled sorption processes. Pb LIII-edge and Zn K-edge grazing-incidence extended X-ray absorption fine structure (GI-EXAFS) measurements suggest that both Pb(II) and Zn(II) ions may be complexed by carboxyl groups in S. oneidensis biofilms after 3-h exposure at pH 6.0 and [Me(II)] = 10−5 M. In contrast with Burkholderia cepacia, which was used in our previous studies of monolayer biofilm-coated metal-oxide surfaces (Templeton et al., 2001), S. oneidensis MR-1 forms relatively thick biofilm coatings (6–20 μm) that are rich in reactive functional groups and are expected to dominate metal-ion adsorption. Our results show that even thick and highly reactive biofilms like S. oneidensis do not cause much change in the intrinsic chemical reactivities of the underlying metal-oxide surfaces with respect to aqueous Pb(II) and Zn(II) and don’t block reactive sites on the metal-oxide surfaces; instead they reduce the rate of Pb(II) and Zn(II) sorption onto these surfaces.