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Anomalous magnetoresistance due to longitudinal spin fluctuations in a J eff = 1/2 Mott semiconductor

Authors :
Philip Ryan
Cristian D. Batista
Gilberto Fabbris
Jiun-Haw Chu
Derek Meyers
Zhentao Wang
Mark Dean
Joshua Sanchez
Jian Liu
Junyi Yang
Jong-Woo Kim
Kipton Barros
Daniel Haskel
Lin Hao
Yongseong Choi
Source :
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Publication Year :
2019
Publisher :
Nature Portfolio, 2019.

Abstract

As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a new positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO3/SrTiO3 superlattice. Its size is particularly large in the high-temperature insulating paramagnetic phase near the N\'eel transition. This novel magnetoresistance originates from a collective charge response to the large longitudinal spin fluctuations under a linear coupling between the external magnetic field and the staggered magnetization enabled by strong spin-orbit interaction. Our results demonstrate a magnetic control of the binding energy of the fluctuating particle-hole pairs in the Slater-Mott crossover regime analogous to the BCS-to-Bose-Einstein condensation crossover of ultracold-superfluids.<br />Comment: Accepted by Nature communications

Details

Language :
English
ISSN :
20411723
Volume :
10
Issue :
1
Database :
OpenAIRE
Journal :
Nature Communications
Accession number :
edsair.doi.dedup.....8abadb0773d49aea8f83b3ab227e6068