436 results on '"Yonenaga, I."'
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2. Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations
3. A novel constitutive model for semiconductors: The case of silicon
4. Longitudinal Muon Spin Depolarization in Ge-Rich SiGe Alloys
5. SixGe1-x Bulk Crystals
6. Optical properties of fresh dislocations in GaN
7. How to best measure atomic segregation to grain boundaries by analytical transmission electron microscopy
8. Cellular structures in Czochralski-grown SiGe bulk crystal
9. Point defects generated by oxidation of silicon crystal surface
10. Evidence for a shallow muonium acceptor state in Ge-rich [formula omitted]
11. Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors
12. Muonium acceptor states in high Ge [formula omitted] alloys
13. Formation of multiple nanoscale twin boundaries that emit intense light in indirect-gap AlGaAs epilayers
14. Segregation of boron in germanium crystal
15. Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si x Ge1−x (0.93 < x < 0.96) single crystals
16. Dynamics and characters of dislocations in ZnSe
17. Dislocation structures in tetragonal hen egg-white lysozyme crystals using synchrotron white-beam topography
18. Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy
19. Muonium defect states and ionization energies in SiGe alloys
20. Oxygen defects in langasite (La 3Ga 5SiO 14) single crystal grown by vertical Bridgman (VB) method
21. Electronic properties of nanoscale multiple twin boundaries in indirect-gap AlGaAs
22. Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional scanning tunneling microscopy
23. Influence of high-magnetic-field on dislocation–oxygen interaction in silicon
24. Atomistic structure and strain relaxation in Czochralski-grown Si x Ge1−x bulk alloys
25. Dislocation of high quality P-doped ZnTe substrate examined by X-ray topography
26. Photoluminescence Study of Plastically Deformed GaN
27. Nitrogen effects on generation and velocity of dislocations in Czochralski-grown silicon
28. Dislocation behavior in highly impurity-doped Si
29. Dislocation of high-quality large DCP-ZnTe substrate examined by photoluminescence and X-ray topography
30. Yield strength and dislocation mobility in plastically deformed ZnSe
31. Photoluminescence of dislocations in plastically deformed GaN
32. Segregation coefficients of various dopants in Si xGe 1−x (0.93< x
33. High Temperature Hardness of Bulk Single Crystal GaN
34. Growth and mechanical properties of GeSi bulk crystals
35. Anomalous low energy phonon dispersion in bulk silicon-germanium observed by inelastic x-ray scattering
36. Growth and Atomistic Structure Study of Disordered SiGe Mixed Semiconductors
37. Dislocation–impurity interaction in Si
38. SixGe1−x Bulk Crystals
39. High-temperature strength of bulk single crystals of III-V nitrides
40. Atomistic structure and strain relaxation in Czochralski-grown SixGe1−x bulk alloys
41. Photoluminescence spectra of deformed Si-Ge alloy
42. Disorder-induced broadening of transverse acoustic phonons in Si xGe 1− x mixed crystals
43. Local atomic structure in Czochralski-grown Ge 1− xSi x bulk alloys
44. Diffusion and solubility of zinc in dislocation-free and plastically deformed silicon crystals
45. High quality p-type ZnO film grown on ZnO substrate by nitrogen and tellurium co-doping
46. Local strain relaxation in Czochralski-grown GeSi bulk alloys
47. Hydrogen behaviour in bulk Si1−xGex alloys as modelled by muonium
48. Jahn–Teller distortion of neutral divacancy in Si studied by positron annihilation spectroscopy
49. ESR signature of tetra-interstitial defect in silicon
50. Dislocation–impurity interaction in Si
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