Nitrogen effects on generation and velocity of dislocations in Czochralski-grown silicon

The dynamic properties of dislocations in nitrogen (N)-doped Czochralski-grown Si crystals with various concentrations up to 6 x 10(super 15) cm(super -3) are investigated using the etch pit technique and compared with such characteristics of N-free Si crystals. The findings revealed that N doping is effective in the promotion of precipitation of oxygen impurity resulting in immobilization of dislocations.