Search

Cognitive functions such as learning in mammalian brains have been attributed to the presence of neuronal circuits with feed-forward and feedback topologies. Such networks have interactions within and between neurons that provide excitory and inhibitory modulation effects. In neuromorphic computing, neurons that combine and broadcast both excitory and inhibitory signals using one nanoscale device are still an elusive goal. Here we introduce a type-II, two-dimensional heterojunction-based optomemristive neuron, using a stack of MoS2, WS2 and graphene that demonstrates both of these effects via optoelectronic charge-trapping mechanisms. We show that such neurons provide a nonlinear and rectified integration of information, that can be optically broadcast. Such a neuron has applications in machine learning, particularly in winner-take-all networks. We then apply such networks to simulations to establish unsupervised competitive learning for data partitioning, as well as cooperative learning in solving combinatorial optimization problems.

The Quaternary red clay (QRC) is one of the typical terrestrial sediments in southern China which contains abundant palaeoclimatic information. A natural QRC outcrop, named the Jingxian red clay section (JRCS), was developed in Jingxian City on the northern piedmont of Mt. Huangshan, offering a valuable archive for long-term palaeoclimatic study from a southern China perspective. The objective of this study is to reveal palaeoclimatic information of regional precipitation from the JRCS and its correlation with the East Asian summer monsoon (EASM) intensity, using grain-size measurements combined with dating via Electron Spin Resonance (ESR) and palaeomagnetism. The results indicate that: (1) Ten palaeoclimatic wetter periods (PWPs) designated as PWPI to PWPX from top to bottom were detected from the grain-size analysis results of the upper 9.4 m JRCS. These PWPs span a period from approximately 840 ka ago to present; (2) three PWPs (PWPVIII to PWPX) were basically determined to approximately 612–690, 720–762 and 792–822 ka ago, basically corresponding to China loess layers of L6, L7 and L8 and deep-sea isotope stages of MIS16, MIS18 and MIS20, respectively. Data suggests that the PWPs in the study area were observed mainly during glaciations; (3) regional precipitation in the study area should be negatively related to the EASM intensity since approximately 840 ka ago as a result of variations in North Hemisphere solar insolation and uplifts of the Tibetan Plateau; (4) the modern anti-phase of monsoonal rainfall at glacial-interglacial timescales seemed to have existed between northern China and southern China since the late Early Pleistocene (approximately 840 ka ago).

Two-dimensional (2D) materials are atomically thick and without out-of-plane dangling bonds. As a result, they could break the confinement of lattice matching, and thus can be freely mixed and matched together to construct vertical van der Waals heterostructures. Here, we demonstrated an asymmetrical vertical structure of graphene/hexagonal boron nitride (h-BN)/tungsten disulfide (WS

We investigate the 2D-layer-dependent electronic and optoelectronic properties of lateral Au/graphene/WS2 photodetecting diodes. All 2D materials used [graphene and WS2 domains [monolayer (1L) and ...

We proposed and completed a real-life data mining problem, aka, text corpus classification. We extracted 15,500 medical documents relevant to ten different diseases and used the bag-of-words model to create a word occurrence vector for each document. The latent semantic analysis (LSA) method is then used to reduce the occurrence vector’s dimensionality to a feature vector of dimension 200. We selected a multilayer perceptron (MLP) neural network to do the final classification and report the performance comparison with the other six classifiers. We also completed the grid search for the best feature subspace dimensionality.

Two-dimensional materials are being increasingly studied, particularly for flexible and wearable technologies because of their inherent thickness and flexibility. Crucially, one aspect where our understanding is still limited is on the effect of mechanical strain, not on individual sheets of materials, but when stacked together as heterostructures in devices. In this paper, we demonstrate the use of Kelvin probe microscopy in capturing the influence of uniaxial tensile strain on the band-structures of graphene and WS2 (mono- and multilayered) based heterostructures at high resolution. We report a major advance in strain characterization tools through enabling a single-shot capture of strain defined changes in a heterogeneous system at the nanoscale, overcoming the limitations (materials, resolution, and substrate effects) of existing techniques such as optical spectroscopy. Using this technique, we observe that the work-functions of graphene and WS2 increase as a function of strain, which we attribute to the Fermi level lowering from increased p-doping. We also extract the nature of the interfacial heterojunctions and find that they get strongly modulated from strain. We observe that the strain-enhanced charge transfer with the substrate plays a dominant role, causing the heterostructures to behave differently from two-dimensional materials in their isolated forms.

We show how control over the chemical vapor deposition (CVD) reaction chemistry of molybdenum disulfide (MoS2) by hydrogen addition can enable the direct growth of centimeter-scale continuous films of vertically stacked MoS2 monolayer on graphene under atmospheric pressure conditions. Hydrogen addition enables longer CVD growth times at high temperature by reducing oxidation effects that would otherwise degrade the monolayer graphene. By careful control of nucleation density and growth time, high-quality monolayer MoS2 films could be formed on graphene, realizing all CVD-grown vertically stacked monolayer semimetal/semiconducting interfaces. Photoluminescence spectroscopy shows quenching of MoS2 by the underlying graphene, indicating a good interfacial charge transfer. We utilize the MoS2/graphene vertical stacks as photodetectors, with photoresponsivities reaching 2.4 A/W under 135 μW 532 nm illumination. This approach provides insights into the scalable manufacturing of high-quality two-dimensional elec...

This paper focuses on climatic and tectonic controls to determine their relative importance to the Quaternary fluvial incision by the Qingyijiang River, eastern China. The Qingyijiang, which is one of longest tributaries of the lower Yangtze River, drains the northern piedmont of Mt. Huangshan. A field survey focused on three natural sections of the Qingyijiang in the Jingxian basin, where a well-preserved sequence of one alluvial platform (P) and three fluvial terraces (T3, T2, and T1) is presented. The heights of the platform and the terraces above river level are ~ 65, ~ 40, ~ 20, and ~ 7 m respectively. In this study, electron spin resonance (ESR), optical stimulated luminescence (OSL), and palaeomagnetic dating were applied to reconstruct the fluvial incision history of the Qingyijiang and evaluate the possible influence of tectonic uplift and/or climate change on the fluvial incision. The main results show that (1) the ages of P, T3, T2, and T1 were determined to be ∼ 1300, ∼ 900, ∼ 600, and ∼ 1.5 ka respectively, corresponding to four incision events in the Qingyijiang; (2) the East Asian summer monsoon (EASM) experienced four significant weakening events at ~ 1300, ~ 900, ~ 600, and ∼ 1.5 ka, according to previous research. Correspondingly, we propose that four significant increased periods of regional precipitation occurred at ~ 1300, ~ 900, ~ 600, and ∼ 1.5 ka in the study area because of the negative correlation between the intensity of the EASM and regional precipitation from 1960 to 2012; and (3) fluvial incision by the Qingyijiang arose as a result of the weakening of the EASM in combination with tectonic uplift, determined by matching fluvial incision history of the Qingyijiang with tectonic movement and EASM change. In addition, the weakening of the EASM climatically triggered fluvial incision by the Qingyijiang. This study supports the conclusion that major fluvial incision has been climatically triggered; however, it also suggests that the mechanism of river incision may be regionally distinctive in different climatic zones.

The high-bias and breakdown behavior of suspended mono- and few-layer WS2 was explored by in situ aberration-corrected transmission electron microscopy. The suspended WS2 devices were found to undergo irreversible breakdown at sufficiently high biases due to vaporization of the WS2. Simultaneous to the removal of WS2 was the accompanying formation of few-layer graphene decorated with W and WS2 nanoparticles, with the carbon source attributed to organic residues present on the WS2 surface. The breakdown of few-layer WS2 resulted in the formation of faceted S-depleted WS2 tendrils along the vaporization boundary, which were found to exhibit lattice contraction indicative of S depletion, alongside pure W phases incorporated into the structure, with the interfaces imaged at atomic resolution. The combination of observing the graphitization of the amorphous carbon surface residue, W nanoparticles, and S-depleted WS2 phases following the high-bias WS2 disintegration all indicate a thermal Joule heating breakdown mechanism over an avalanche process, with WS2 destruction promoted by preferential S emission. The observation of graphene formation and the role the thin amorphous carbon layer has in the prebreakdown behavior of the device demonstrate the importance of employing encapsulated heterostructure device architectures that exclude residues.

BACKGROUND AND PURPOSE: General anaesthetics can act on synaptic GABA(A) receptors by binding to one of three classes of general anaesthetic sites. Canonical drugs that bind selectively to only one class of site are etomidate, alphaxalone, and the mephobarbital derivative, R‐mTFD‐MPAB. We tested the hypothesis that the general anaesthetic potencies of mixtures of such site‐selective agents binding to the same or to different sites would combine additively or synergistically respectively. EXPERIMENTAL APPROACH: The potency of general anaesthetics individually or in combinations to cause loss of righting reflexes in tadpoles was determined, and the results were analysed using isobolographic methods. KEY RESULTS: The potencies of combinations of two or three site‐selective anaesthetics that all acted on a single class of site were strictly additive, regardless of which single site was involved. Combinations of two or three site‐selective anaesthetics that all bound selectively to different sites always interacted synergistically. The strength of the synergy increased with the number of separate sites involved such that the percentage of each agent's EC(50) required to cause anaesthesia was just 35% and 14% for two or three sites respectively. Propofol, which binds non‐selectively to the etomidate and R‐mTFD‐MPAB sites, interacted synergistically with each of these agents. CONCLUSIONS AND IMPLICATIONS: The established pharmacology of the three anaesthetic binding sites on synaptic GABA(A) receptors was sufficient to predict whether a mixture of anaesthetics interacted additively or synergistically to cause loss of righting reflexes in vivo. The principles established here have implications for clinical practice.

We show that reducing the degree of van der Waals overlapping in all 2D ultrathin lateral devices composed of graphene:WS2:graphene leads to significant increase in photodetector responsivity. This is achieved by directly growing WS2 using chemical vapor deposition (CVD) in prepatterned graphene gaps to create epitaxial interfaces. Direct-CVD-grown graphene:WS2:graphene lateral photodetecting transistors exhibit high photoresponsivities reaching 121 A/W under 2.7 × 105 mW/cm2 532 nm illumination, which is around 2 orders of magnitude higher than similar devices made by the layer-by-layer transfer method. The photoresponsivity of our direct-CVD-grown device shows negative correlation with illumination power under different gate voltages, which is different from similar devices made by the transfer method. We show that the high photoresponsivity is due to the lowering of effective Schottky barrier height by improving the contact between graphene and WS2. Furthermore, the direct CVD growth reduces overlapping sections of WS2:Gr and leads to more uniform lateral systems. This approach provides insights into scalable manufacturing of high-quality 2D lateral electronic and optoelectronic devices.

We show that grain boundaries (GBs) in polycrystalline monolayer WS2 can act as conduction channels with a lower gate onset potential for field-effect transistors made parallel, compared to devices made in pristine areas and perpendicular to GBs. Localized doping at the GB causes photoluminescence quenching and a reduced Schottky barrier with the metal electrodes, resulting in higher conductivity at lower applied bias values. Samples are grown by chemical vapor deposition with large domains of ∼100 μm, enabling numerous devices to be made within single domains, across GBs and at many similar sites across the substrate to reveal similar behaviors. We corroborate our electrical measurements with Kelvin probe microscopy, highlighting the nature of the doping-type in the material to change at the grain boundaries. Molecular dynamics simulations of the GB are used to predict the atomic structure of the dislocations and meandering tilt GB behavior on the nanoscale. These results show that GBs can be used to provide conduction pathways that are different to transport across GBs and in pristine area for potential electronic applications.

We show that grain boundaries (GBs) in polycrystalline monolayer WS

We show that reducing the degree of van der Waals overlapping in all 2D ultrathin lateral devices composed of graphene:WS

Atomically thin vertical heterostructures are promising candidates for optoelectronic applications, especially for flexible and transparent technologies. Here, we show how ultrathin all two-dimensional vertical-stacked type-II heterostructure devices can be assembled using only materials grown by chemical vapor deposition, with graphene (Gr) as top and bottom electrodes and MoS

Atomically thin vertical heterostructures are promising candidates for optoelectronic applications, especially for flexible and transparent technologies. Here, we show how ultrathin all two-dimensional vertical-stacked type-II heterostructure devices can be assembled using only materials grown by chemical vapor deposition, with graphene (Gr) as top and bottom electrodes and MoS2/WS2 as the active semiconductor layers in the middle. Furthermore, we show that the stack symmetry, which dictates the type-II directionality, is the dominant factor in controlling the photocurrent direction upon light irradiation, whereas in homobilayers, photocurrent direction cannot be easily controlled because the tunnel barrier is determined by the doping levels of the graphene, which appears fixed for top and bottom graphene layers due to their dielectric environments. Therefore, the ability to direct photovoltaic current flow is demonstrated to be only possible using heterobilayers (HBs) and not homobilayers. We study the photovoltaic effects in more than 40 devices, which allows for statistical verification of performance and comparative behavior. The photovoltage in the graphene/transition-metal dichalcogenide-heterobilayer/graphene (Gr/TMD-HB (MoS2/WS2)/Gr) increases up to 10 times that generated in the monolayer TMD devices under the same optical illumination power, due to efficient charge transfer between WS2 and MoS2 and extraction to graphene electrodes. By applying external gate voltages ( Vg), the band alignment can be tuned, which in turn controls the photovoltaic effect in the vertical heterostructures. The tunneling-assisted interlayer charge recombination also plays a significant role in modulating the photovoltaic effect in the Gr/TMD-HB/Gr. These results provide important insights into how layer symmetry in vertical-stacked graphene/TMD/graphene ultrathin optoelectronics can be used to control electron flow directions during photoexcitation and open up opportunities for tandem cell assembly.

Arrays of metal–semiconductor–metal (MSM) photodetectors are fabricated using chemical vapor deposition (CVD) grown 2D monolayer WS2 as the absorbing semiconductor (WS2) with gold electrodes. A study of the channel length dependence (0.2–6.4 μm) on the photoresponsivity and gain show substantial increase in performance is achieved when the length is reduced to 200 nm. A large gain factor of up to 480 is measured for 200 nm length devices and attributed to lowering of the Schottky barriers due to the filling of trapped states between the metal contact and WS2 by photogenerated carriers. Only photoexcited carriers close to the interface contribute to filling trap states and lowering the Schottky barrier and therefore increasing channel length only adds series resistance to the device that reduces performance. These results reveal detailed insights regarding the mechanisms for photocurrent generation in lateral MSM photodetectors that employ CVD grown monolayer WS2 material, which has important consequences for the commercial applications and large scale development of 2D imaging arrays.

2D semiconducting transition metal dichalcogenides (TMDs) are endowed with fascinating optical properties especially in their monolayer limit. Insulating hBN films possessing customizable thickness can act as a separation barrier to dictate the interactions between TMDs. In this work, vertical layered heterostructures (VLHs) of WS2 :hBN:WS2 are fabricated utilizing chemical vapor deposition (CVD)-grown materials, and the optical performance is evaluated through photoluminescence (PL) spectroscopy. Apart from the prohibited indirect optical transition due to the insertion of hBN spacers, the variation in the doping level of WS2 drives energy transfer to arise from the layer with lower quantum efficiency to the other layer with higher quantum efficiency, whereby the total PL yield of the heterosystem is increased and the stack exhibits a higher PL intensity compared to the sum of those in the two WS2 constituents. Such doping effects originate from the interfaces that WS2 monolayers reside on and interact with. The electron density in the WS2 is also controlled and subsequent modulation of PL in the heterostructure is demonstrated by applying back-gated voltages. Other influential factors include the strain in WS2 and temperature. Being able to tune the energy transfer in the VLHs may expand the development of photonic applications in 2D systems.

Here we study the layer-dependent photoconductivity in Gr/WS2/Gr vertical stacked tunneling (VST) cross-bar devices made using two-dimensional (2D) materials all grown by chemical vapor deposition. The larger number of devices (>100) enables a statistically robust analysis on the comparative differences in the photovoltaic response of monolayer and bilayer WS2, which cannot be achieved in small batch devices made using mechanically exfoliated materials. We show a dramatic increase in photovoltaic response for Gr/WS2(2L)/Gr compared to monolayers because of the long inter- and intralayer exciton lifetimes and the small exciton binding energy (both interlayer and intralayer excitons) of bilayer WS2 compared with that of monolayer WS2. Different doping levels and dielectric environments of top and bottom graphene electrodes result in a potential difference across a ∼1 nm vertical device, which gives rise to large electric fields perpendicular to the WS2 layers that cause band structure modification. Our results show how precise control over layer number in all 2D VST devices dictates the photophysics and performance for photosensing applications.

Here we study the layer-dependent photoconductivity in Gr/WS

Tin disulfide crystals with layered two-dimensional (2D) sheets are grown by chemical vapor deposition using a novel precursor approach and integrated into all 2D transistors with graphene (Gr) electrodes. The Gr:SnS2:Gr transistors exhibit excellent photodetector response with high detectivity and photoresponsivity. We show that the response of the all 2D photodetectors depends upon charge trapping at the interface and the Schottky barrier modulation. The thickness-dependent SnS2 measurements in devices reveal a transition from the interface-dominated response for thin crystals to bulklike response for the thicker SnS2 crystals, showing the sensitivity of devices fabricated using layered materials on the number of layers. These results show that SnS2 has photosensing performance when combined with Gr electrodes that is comparable to other 2D transition metal dichalcogenides of MoS2 and WS2.

We show how control over the chemical vapor deposition (CVD) reaction chemistry of molybdenum disulfide (MoS

A demonstration is presented of how significant improvements in all-2D photodetectors can be achieved by exploiting the type-II band alignment of vertically stacked WS2 /MoS2 semiconducting heterobilayers and finite density of states of graphene electrodes. The photoresponsivity of WS2 /MoS2 heterobilayer devices is increased by more than an order of magnitude compared to homobilayer devices and two orders of magnitude compared to monolayer devices of WS2 and MoS2 , reaching 103 A W-1 under an illumination power density of 1.7 × 102 mW cm-2 . The massive improvement in performance is due to the strong Coulomb interaction between WS2 and MoS2 layers. The efficient charge transfer at the WS2 /MoS2 heterointerface and long trapping time of photogenerated charges contribute to the observed large photoconductive gain of ≈3 × 104 . Laterally spaced graphene electrodes with vertically stacked 2D van der Waals heterostructures are employed for making high-performing ultrathin photodetectors.

A demonstration is presented of how significant improvements in all-2D photodetectors can be achieved by exploiting the type-II band alignment of vertically stacked WS

We show that hexagonal domains of monolayer tungsten disulfide (WS2) grown by chemical vapor deposition (CVD) with powder precursors can have discrete segmentation in their photoluminescence (PL) emission intensity, forming symmetric patterns with alternating bright and dark regions. Two-dimensional maps of the PL reveal significant reduction within the segments associated with the longest sides of the hexagonal domains. Analysis of the PL spectra shows differences in the exciton to trion ratio, indicating variations in the exciton recombination dynamics. Monolayers of WS2 hexagonal islands transferred to new substrates still exhibit this PL segmentation, ruling out local strain in the regions as the dominant cause. High-power laser irradiation causes preferential degradation of the bright segments by sulfur removal, indicating the presence of a more defective region that is higher in oxidative reactivity. Atomic force microscopy (AFM) images of topography and amplitude modes show uniform thickness of the WS2 domains and no signs of segmentation. However, AFM phase maps do show the same segmentation of the domain as the PL maps and indicate that it is caused by some kind of structural difference that we could not clearly identify. These results provide important insights into the spatially varying properties of these CVD-grown transition metal dichalcogenide materials, which may be important for their effective implementation in fast photo sensors and optical switches.

In this report, graphene (Gr) is used as a 2D electrode and monolayer WS2 as the active semiconductor in ultrathin photodetector devices. All of the 2D materials are grown by chemical vapor deposition (CVD) and thus pose as a viable route to scalability. The monolayer thickness of both electrode and semiconductor gives these photodetectors ∼2 nm thickness. We show that graphene is different to conventional metal (Au) electrodes due to the finite density of states from the Dirac cones of the valence and conduction bands, which enables the photoresponsivity to be modulated by electrostatic gating and light input control. We demonstrate lateral Gr-WS2-Gr photodetectors with photoresponsivities reaching 3.5 A/W under illumination power densities of 2.5 × 10(7) mW/cm(2). The performance of monolayer WS2 is compared to bilayer WS2 in photodetectors and we show that increased photoresponsivity is achieved in the thicker bilayer WS2 crystals due to increased optical absorption. This approach of incorporating graphene electrodes in lateral TMD based devices provides insights on the contact engineering in 2D optoelectronics, which is crucial for the development of high performing ultrathin photodetector arrays for versatile applications.

We study the in situ electro-conductance in nanoscale electronic devices composed of suspended monolayer WS

We study the in-situ electro-conductance in nanoscale electronic devices composed of suspended monolayer 2D WS2 with metal electrodes inside an aberration-corrected transmission electron microscope. Monitoring the conductance changes when the device is exposed to the electron beam with 80keV energy reveals a decrease in conductivity with increasing beam current density. The response time of the electro-conductance when exposed to the electron beam is substantially faster than the recovery time when the beam is turned off. We proposed a charge trap model that accounts for excitation of electrons into the conduction band and localized trap states from energy supplied by inelastic scattering of incident 80keV electrons. These results show how monolayer transition metal dichalcogenide 2D semiconductors can be used as transparent direct electron detectors in ultrathin nanoscale devices.

Understanding the stability of monolayer transition metal dichalcogenides in atmospheric conditions has important consequences for their handling, life-span, and utilization in applications. We show that cryogenic photoluminescence spectroscopy (PL) is a highly sensitive technique to the detection of oxidation induced degradation of monolayer tungsten disulfide (WS2) caused by exposure to ambient conditions. Although long-term exposure to atmospheric conditions causes massive degradation from oxidation that is optically visible, short-term exposure produces no obvious changes to the PL or Raman spectra measured at either room temperature or even cryogenic environment. Laser processing was employed to remove the surface adsorbents, which enables the defect states to be detected via cryogenic PL spectroscopy. Thermal cycling to room temperature and back down to 77 K shows the process is reversible. We also monitor the degradation process of WS2 using this method, which shows that the defect related peak can be observed after one month aging in ambient conditions.

The liver is the primary site of metastasis for gastrointestinal cancers and is a location highly susceptible to the establishment of metastasis in numerous other primary cancers, including breast, lung, and pancreatic cancers. The current standard of care typically consists of primary tumor resection and systemic administration of potent but toxic chemotherapeutics, yielding a minimal improvement in the median survival rate. CXCL12, a chemokine, is a key factor for activating the migration/survival pathways of CXCR4+ cancer cells and for recruiting immunosuppressive cells to areas of inflammation. Therefore, reducing CXCL12 concentrations within the liver has the potential to decrease tumor and immunosuppressive cell activation/migration within the liver. However, because of off-target toxicities associated with systemic administration of anti-CXCL12 therapies, transient and liver-specific expression of a CXCL12 trap is necessary. To address this challenge, we developed a lipid calcium phosphate nanoparticle optimized for delivering plasmid DNA, encoding an engineered CXCL12 protein trap, to the nucleus of liver hepatocytes. This pCXCL12-trap formulation yielded transient (4 days) liver-specific expression, which greatly decreased the occurrence of liver metastasis in two aggressive liver metastasis models, including colorectal [CT-26(FL3)] and breast (4T1) cancers. Subsequent studies in an aggressive human colorectal liver metastasis model (HT-29) decreased the establishment of liver metastasis more effectively than did systemic administration of the CXCL12 protein trap and to a level comparable to a high-dose regimen of a potent CXCR4 antagonist (AMD3100).

Monolayer transition metal dichalcogenides (TMDs) are direct band gap semiconductors, and their 2D structure results in large binding energies for excitons, trions, and biexcitons. The ability to explore many-body effects in these monolayered structures has made them appealing for future optoelectronic and photonic applications. The band structure changes for bilayer TMDs with increased contributions from indirect transitions, and this has limited similar in-depth studies of biexcitons. Here, we study biexciton emission in bilayer WS2 grown by chemical vapor deposition as a function of temperature. A biexciton binding energy of 36 �4 meV is measured in the as-grown bilayer WS2 containing 0.4% biaxial strain as determined by Raman spectroscopy. The biexciton emission was difficult to detect when the WS2 was transferred to another substrate to release the stain. Density functional theory calculations show that 0.4% of tensile strain lowers the direct band gap by about 55 meV without significant change to the indirect band gap, which can cause an increase in the quantum yield of direct exciton transitions and the emission from biexcitons formed by two direct gap excitons. We find that the biexciton emission decreases dramatically with increased temperature due to the thermal dissociation, with an activation energy of 26 � 5 meV. These results show how strain can be used to tune the many-body effects in bilayered TMD materials and extend the photonic applications beyond pure monolayer systems.

We study the interactions in graphene/WS2 two-dimensional (2D) layered vertical heterostructures with variations in the areal coverage of graphene by the WS2. All 2D materials were grown by chemical vapor deposition and transferred layer by layer. Photoluminescence (PL) spectroscopy of WS2 on graphene showed PL quenching along with an increase in the ratio of exciton/trion emission, relative to WS2 on SiO2 surface, indicating a reduction in the n-type doping levels of WS2 as well as reduced radiative recombination quantum yield. Electrical measurements of a total of 220 graphene field effect transistors with different WS2 coverage showed double-Dirac points in the field effect measurements, where one is shifted closer toward the 0 V gate neutrality position due to the WS2 coverage. Photoirradiation of the WS2 on graphene region caused further Dirac point shifts, indicative of a reduction in the p-type doping levels of graphene, revealing that the photogenerated excitons in WS2 are split across the heterostructure by electron transfer from WS2 to graphene. Kelvin probe microscopy showed that regions of graphene covered with WS2 had a smaller work function and supports the model of electron transfer from WS2 to graphene. Our results demonstrate the formation of junctions within a graphene transistor through the spatial tuning of the work function of graphene using these 2D vertical heterostructures.

A new type of ultraviolet photo-detectors (UVPDs) based on a bundle of highly aligned SiC nanowires was fabricated and the photo-electric properties of the UVPDs including I–V characteristics and time response were studied in this work. SiC nanowires were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The diameters of SiC nanowires varied from 100 to 200 nm while they were some centimeters long and the SiC nanowires were with zinc blended cubic form (β-SiC) tested by X-ray diffraction. A bundle of nanowires was fixed onto two legs’ base by conductive silver paste to form the UVPDs. The electrical measurement of the device showed a significant increase of current when the device was exposed to 254 nm UV light, and the rising time of the device is very short, but the falling time is relatively long. Our results show that the UVPDs based on SiC nanowires have excellent electrical and optical properties which can be potentially applied.

Abnormal activation or overexpression of Mer receptor tyrosine kinase has been implicated in survival signaling and chemoresistance in many human cancers. Consequently, Mer is a promising novel cancer therapeutic target. A structure-based drug design approach using a pseudo-ring replacement strategy was developed and validated to discover a new family of pyridinepyrimidine analogues as potent Mer inhibitors. Through SAR studies, 10 (UNC2250) was identified as the lead compound for further investigation based on high selectivity against other kinases and good pharmacokinetic properties. When applied to live cells, 10 inhibited steady-state phosphorylation of endogenous Mer with an IC50 of 9.8 nM and blocked ligand-stimulated activation of a chimeric EGFR-Mer protein. Treatment with 10 also resulted in decreased colony-forming potential in rhabdoid and NSCLC tumor cells, thereby demonstrating functional antitumor activity. The results provide a rationale for further investigation of this compound for therapeutic application in patients with cancer.

Plasmon was probed from graphene which was grown by chemical vapor deposition using terahertz time-domain spectroscopy at room temperature. Graphene was laid on a resonant cavity, and metal grating was then deposited on top of them. For the THz light polarized along the grid fingers, the optical conductivity of graphene changed from Drude response into strongly Lorentz behavior with a peak formed in the THz-region. These experimental results are highly consistent with the theoretical prediction of a single layer graphene. It confirms that the graphene plasmon frequency can be tuned by the length of grating. Moreover, the extinction in the transmission of single-layer graphene can also be increased beyond 60%.

Ultraviolet (UV)-induced sensors based on a single SiC nanowire (NW) were fabricated and the photoelectric properties including I–V characteristics and time response of the UV sensors were studied. SiC NWs (NWs) were prepared through pyrolyzing a polymer precursor with ferrocene as the catalyst by a CVD route. To elucidate the physical mechanism giving rise to the photoelectrical response in SiC NW sensors, three kinds of contacts between electrodes and SiC NW were prepared, i.e. Schottky contact, p–n junction contact, and Ohmic contact. The photoelectric measurements of the device with Schottky contact indicates the lowest dark current and the largest photocurrent. The results suggest that photocurrent generated at SiC NW-electrode contacts is a result of the photovoltaic effect, in which a built-in electric field accelerates photo generated charge carriers to the electronic contacts. The UV sensors based on SiC NWs could be applied in a harsh environment due to the excellent physical stability and photoelectric properties.

Two-dimensional gallium sulfide (GaS) crystals are synthesized by a simple and efficient ambient pressure chemical vapor deposition (CVD) method using a single-source precursor of Ga2S3. The synthesized GaS structures involve triangular monolayer domains and multilayer flakes with thickness of 1 and 15 nm, respectively. Regions of continuous films of GaS are also achieved with about 0.7 cm2 uniform coverage. This is achieved by using hydrogen carrier gas and the horizontally placed SiO2/Si substrates. Electron microscopy and spectroscopic measurements are used to characteristic the CVD-grown materials. This provides important insights into novel approaches for enlarging the domain size of GaS crystals and understanding of the growth mechanism using this precursor system.

Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are, however, compromised by nanometer-scale edge roughness and resolution variability issues, which especially affect the performance of 2D materials. Here, we study how dry anisotropic etching of multilayer 2D materials with sulfur hexafluoride (SF6) may overcome some of these issues, showing results for hexagonal boron nitride (hBN), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum disulfide (MoS2), and molybdenum ditelluride (MoTe2). Scanning electron microscopy and transmission electron microscopy reveal that etching leads to anisotropic hexagonal features in the studied transition metal dichalcogenides, with the relative degree of anisotropy ranked as: WS2 > WSe2 > MoTe2 ∼MoS2. Etched holes are terminated by zigzag edges while etched dots (protrusions) are terminated by armchair edges. This can be explained by Wulff constructions, taking the relative stabilities of the edges and the AA′ stacking order into account. Patterns in WS2 are transferred to an underlying graphite layer, demonstrating a possible use for creating sub-10 nm features. In contrast, multilayer hBN exhibits no lateral anisotropy but shows consistent vertical etch angles, independent of crystal orientation. Using an hBN crystal as the base, ultrasharp corners can be created in lithographic patterns, which are then transferred to a graphite crystal underneath. We find that the anisotropic SF6 reactive ion etching process makes it possible to downsize nanostructures and obtain smooth edges, sharp corners, and feature sizes significantly below the resolution limit of electron beam lithography. The nanostructured 2D materials can be used themselves or as etch masks to pattern other nanomaterials.