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59 results on '"Yasushi Nakasaki"'

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1. Interface defect engineering for high-performance MOSFETs with novel carrier mobility model: Theory and experimental verification

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10. Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

11. Interface defect engineering for high-performance MOSFETs with novel carrier mobility model: Theory and experimental verification

12. Performance improvement by template-induced crystallization in ferroelectric HfO2 tunnel junction memory for cross-point high-density application

13. Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory

14. Study on mechanism of thermal curing in ultra-thin gate dielectrics

15. Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

16. First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property

17. Deep insight into process-induced pre-existing traps and PBTI stress-induced trap generations in high-k gate dielectrics through systematic RTN characterizations and ab initio calculations

18. Dynamical observation of H-induced gate dielectric degradation through improved nuclear reaction analysis system

19. Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen

20. (Invited) A Study of Dielectric Breakdown Mechanisms in MG/HK MISFETs: From the Viewpoint of TDDB Statistics

21. Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO2 interface

23. Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4

24. Influence of Traps and Carriers on Reliability in HfSiON/$\hbox{SiO}_{2}$ Stacks

25. Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane

26. Dramatic Improvement of Vfb Shift and Gmmax with Ultra-thin and Ultra-low-leakage SiN-based SiON Gate Dielectrics

27. Novel fabrication process to realize ultra-thin (EOT=0.7 nm) and ultra-low-leakage SiON gate dielectrics

28. Improvement of charge-to-breakdown distribution by fluorine incorporation into thin gate oxides

29. Interfacial energy calculation at interconnect‐metal/barrier‐metal interfaces for grain orientation control

30. Novel TDDB mechanism for p-FET accelerated by hydrogen from HfSiON film

32. Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics

34. Influence of pre-existing and generated traps on reliability in HfSiON/SiO2 stacks with fluorine incorporation

35. Dramatic improvement of V/sub fb/ shift and G/sub m/ /sup max/ with ultra-thin and ultra-low-leakage SiN-based SiON gate dielectrics

36. Impact of Very Low Hf Concentration (Hf=6%) Cap Layer on Performance and Reliability Improvement of HfSiON -CMOSFET with EOT Scalable to 1nm

37. Uniform Sub-nm Nitridation on Si(100) through Strong N Condensation

38. Novel fabrication process to realize ultra-thin (EOT = 0.7nm) and ultra-low leakage SiON gate dielectrics

39. Reexamination of fluorine incorporation into SiO/sub 2/-significant improvement of charge-to-breakdown distribution tail

40. Atomic processes of NO oxynitridation on Si(100) surfaces

41. Self‐aligned passivation on copper interconnection durability against oxidizing ambient annealing

42. Electromigration in a single crystalline submicron width aluminum interconnection

44. Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks

45. Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications

46. Erratum to 'Atomic-scale theory on degradation of HfSiON gate stacks by atomic hydrogen accompanied by its interaction with oxygen vacancy and substitutional nitrogen' [Microelectron. Eng. 88 (7) (2011) 1457–1460]

50. Structural Studies of High-Performance Low-k Dielectric Materials Improved by Electron-Beam Curing