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Additional file 2: Table S1. Correlation of preoperative Alb, AFR, NLR, dNLR and clinicopathological characteristics in 153 esophageal squamous cell carcinoma patients.

(Ba0.4Pb0.3)Sr0.3TiO3 thin films were fabricated via pulsed laser deposition (PLD) technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization Ps, remnant polarization Pr and coercive field Ec were about 4.6 μC/cm2, 2.5 μC/cm2 and 23 kV/cm (the coercive voltage is 0.7 V), respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories (NvFeRAMs).

The conventional micro-strip low-pass filter has the shortages of large size, narrow stop-band and wide transition band. To solve these problems, the Hilbert fractal defected ground structure (DGS) micro-strip low-pass filter is designed in this paper. The filter is cascaded by the Hilbert fractal DGS units and shunt branches. The Hilbert fractal DGS unit has a smaller size and can reduce the pass-band reflection loss, and the shunt branch can restrain the higher order harmonic components effectively so the stop-band performance is improved greatly. The tested results show that the cut-off frequency is up to 4.5GHz, the insert loss is less than 0.5dB at the pass-band, and the VSWR is less than 1.5 at the frequency range of 4GHz below. The stop-band suppression is less than −20dB from 5.5GHz to 14GHz, the reduction is more than 10dB, and the filter size is 24.4mm 7.43mm. The goals of miniaturization, high selectivity and wide stop-band low pass filter have been achieved.

A novel particle filter smoothing algorithm for non-linear state estimation is proposed. The key point of this algorithm is that the length of the interval of the particle filter smoothing can be dynamically computed by the difference between the particle and the signal observations, which effectively suppress the phenomenon of increasing error of the system state estimation caused by the particles' weight redistribution when using the fixed smoothing interval method. By considering the signal and the heat bath as an abstract universe based on the particle filter/resampling, a physical analogy is made between the particle filter and the abstract universe, which obeys the second law of thermodynamics. That is to say, when there is no new observation, no matter where the initial state is from, the entropy of the whole system will increase. However, with the coming of the observations this law can be violated. The particle filter behaves like a Maxwellian demon in this physical analogy, returning energy to the heat bath which thus causes entropy to decrease. This is possible due to the steady supply of new information. Then the length of the smoothing interval can be dynamically corrected based on the change of the entropy, so the weight assignments of the particles is optimized, and the performance of the particle filter can be improved. The estimation accuracy of the approach which is verified by simulations is better than the traditional smoothing methods with an affordable computation burden.

A n-Hexyl NH3Sr2Nb3O10 is obtained by the stepwise ion-exchange reaction, then is dispersed in aqueous solution of trinuclear acetato-hydroxo iron (III) nitrate, [Fe3(OCOCH3)7OH·2H2O]NO3, and the interlayer potassium cations of the perovskite niobate are exchanged with the partially hydrolyzed trinuclear acetato complex ions. On heating, the exchanged complex ions are converted into iron oxide pillars which keep the perovskite sheets apart. The product is characterized by XRD, SEM, EDAX and surface area measurement respectively.

With the trend of low-power, low-voltage in IC design, conventional band-gap voltage reference will not be the most suitable candidate anymore. In this paper, an op amp-less band-gap voltage reference is designed in 0.35um 5V/3.3V CMOS process. After the principle and stability of the voltage reference is introduced, the power supply noise rejection ratio (PSRR) and temperature coefficient in low voltage supply are analyzed too. The simulation results indicate that the temperature range is −40□ to 125□, the reference voltage is 1.166V–1.171V and the PSRR is 104dB at 1KHz when the supply voltage range is 2.5V±10% So the proposed op amp-less band-gap reference has the features of high-PSRR, low-voltage and low temperature coefficient. It is very suitable to be applied in low voltage ADC and DAC.

The temperature characteristics of SiGe HBT and its reliability under thermal stress are studied. The experiment results indicate that the current gain at 77K is much larger than the one at 290K. And there is a critical value of I C , which is 2×10−4A. Over this value, the gain increases with the decrease of the temperature. But below the value, the gain drops with the decrease of the temperature. The current ideal factor is smaller than 2 when the temperature is over 193K, but larger than 2 at 193K or below. Besides this, the thermal stress experiments for the base-emitter junction were taken under 100°C and 150°C, and the stress time was 90 hours and 30 hours, respectively. The experiment results indicate that the device characteristic parameters fluctuate under the different thermal stress conditions. The annealing and degeneration play the collective role in the characteristics fluctuating under the thermal stress condition.

The design of Si/SiGe HBT for high-frequency microwave power amplification was presented in this paper. The material profile structure of the device was designed. A comb liked structure with 6-fingered emitter was employed for the SiGe HBT. Then the device was fabricated by using the buried metal self-aligned double mesa process and high resistivity substrate in a 3 ?m manufacture process line. The tested results indicate that the Si/SiGe power HBT reaches the parameters of s=26, VBC?10 V, ICM?180 mA and fT?3.2 GHz.

A balanced-broadband low noise amplifier (LNA) was designed with the FR4 substrate, using packaged SiGe HBTs BFP640 and chip type passive components. The design principle and technology features of the structure of the balanced LNA were described. The computer simulated results indicate that this SiGe balanced LNA has the advantages of the noise figure less than 0.9 dB over 0.8 GHz to 1.7 GHz range, the high gain of 37 dB, the input and output reflected coefficients are all less than -50 dB.

A two-stage broadband low noise amplifier (LNA) was designed. The LNa was implemented on a Teflon substrate using GaAs FET ATF-10136 and PHEMT ATF-34143 with micro-strip circuit technology. This LNA resulted in a noise figure of 1.1dB, and 21 dB gain over 3.6 to 4.2 GHz range. The input and output VSWR are all less than 2.8. The computer simulated results were coincident with that of the test.

The SPICE model parameters of SiGe HBT with high resistivity substrate is extracted. Compared results between measured and simulated data verify that this model is suitable for SiGe HBT DC and AC small-signal characterizations' representation. Using these extracted SPICE parameters, a two-stage direct-coupled amplifier has been designed and implemented on a Teflon substrate PCB. The simulated results are closed to that of test.

A direct-coupled low noise amplifier was designed and fabricated on a Teflon substrate, using packaged SiGe HBTs BFP420 and chip type passive components. This SiGe LNA has the advantages such as the wide bandwidth (2.5GHz), the low noise figure (NF /spl les/ 2.23dB), the high power gain (S21 /spl ges/ 26.7dB), the input and output VSWR are all less than 2. The design principle and technology features of the broadband amplifier was described. The computer simulated results were coincident with that of the test.

After the shortage of the conventional lateral structure of SiGe HBT was analyzed, A new lateral structure was presented. In the meantime, the new fabrication process named buried metal self-aligned technique was designed. The measured frequency features show that the cut-off frequency fT of the device up to 12.3GHz and the maximum oscillation frequency fmax achieves 5.7GHz. Compared to the conventional lateral structure and process, the values of fT and fmax of SiGe HBT based on the new lateral structure and process have been increased 17% and 18.75% respectively. This indicates that the new lateral structure and buried metal self-aligned process is effective to improve the high frequency performance of SiGe HBT