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BACKGROUND: Various risk scores were developed to recognize acute stroke easily and to start treatment right away in the emergency departments. Although the Recognition of Stroke in the Emergency Room (ROSIER) score used for this purpose is indicated better than the other scoring systems, it is expressed that it will be able to have social differentiations. In this study, we targeted to research validation of the ROSIER scale and to compare its efficiency with Face-Arm-Speech Test (FAST), another stroke diagnosis method, for the patients who applied to the emergency department with the stroke or transient ischemic attack symptoms. MATERIAL AND METHODS: The patients who reported to the emergency department with the suggestive symptoms or findings of stroke and were above 18 years of age were included in the study. The study forms were filled out by the emergency medicine specialist or the senior emergency medical assistant after the patients were evaluated, and then they were consulted by the neurology specialist. The final diagnosis, which was established after the clinical evaluation and necessary imaging done by the neurology specialists, was accepted as a standard reference. RESULTS: A total of 335 patients, including 168 (50.1%) females, were included in the study. The sensitivity was 68.5%, specificity was 79.0%, Positive Predictive Value (PPV) was 78.7%, NPV (Negative Predictive Value) was 68.9%, and test validity was 73.4% for the ROSIER scale. For the FAST scale the sensitivity was 63.5%, specificity was 88.5%, PPV was 86.3%, NPV was 68.1%, and test validity was 75.2%. CONCLUSION: In the present study, it was seen that the ROSIER scale could be used in separating the patients with CVO (cerebrovascular accident) from the patients who applied with the similar clinical findings. However, FAST was superior because its specificity and PPV were higher and its practicability was easier than the ROSIER.

Araştırmamızın amacı kadın futbolcularının içsel ve dışsal motivasyon tutumlarını bazı değişkenler açısından incelemektir. Araştırmada nicel araştırma yöntemi uygulanmıştır. Araştırmanın evrenini, Türkiye’nin Akdeniz ve Portekiz’deki Porto bölgelerinde, 2019-2020 sezonunda oynayan amatör, yarı profesyonel ve profesyonel kadın futbolcular oluşturmaktadır. Araştırmanın örneklemi tesadüfi örneklem yöntemi ile belirlenmiştir ve araştırmaya 205 kadın futbolcu katılmıştır. Yapılan araştırmada, araştırma sahibi tarafından oluşturulmuş kişisel bilgi formu (Türkçe, Portekizce ve İngilizce dillerinde) kullanılmıştır. Ayrıca, İngilizce olarak, Pelletier ve ark. (1995) tarafından geliştirilen Sport Motivation Scale (SMS), Türk sporcular için Kazak (2004) tarafından geçerlik güvenirliği yapılan Sporda Güdülenme Ölçeği (SGÖ) ve Portekiz'li sporcular için uyarlanması Bara Filho ve ark. (2011) tarafından yapılan Escala de Motivação Desportiva (EME-BR) olmak üzere üç farklı dilde ölçekler kullanılmıştır. Elde edilen verilen SPSS 22 paket programı ile analiz edilmiştir. Mann Whitney U testi, Kruskal Wallis H testi ve Spearman Korelasyon analizi uygulanmıştır. Sporda Güdülenme Ölçeği alt boyutları lig değişkenine göre incelendiğinde, Portekiz’de futbol oynayan kadın sporcularının güdülenme düzeyleri Türkiye'deki kadın sporculardan anlamlı derecede yüksek olduğu görülmüştür (p

In this work, we have studied the electrical characteristics of Zn/n-Si/Au-Sb Schottky diodes before and after different doses (25, 50 and 75 Gray) of electron-irradiation at room temperature. The ohmic contact has been made on n-Si crystal with Au-Sb alloy. The rectifier contact was sputtered Zinc metal on n-Si by using DC magnetron sputtering. The I–V measurements of these diodes performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C–V measurements were performed with HP 4192A (50–13 MHz) LF Impedance Analyzer at room temperature and in dark. Experimental results showed that the values of the ideality factor obtained from I to V measurements increased and the values of the barrier height obtained from I to V and C–V measurements decreased after electron-irradiation.

A Co/phenol red (PR)/n-Si/Al device has been fabricated and its current–voltage (I–V) characteristics measured between 80 K and 460 K. Junction parameters of the device, such as the ideality factor, barrier height, interface state density, and series resistance (Rs), were determined using standard thermionic emission theory, the Cheung function, and the Norde method. The application of these approaches revealed that n varied between 4.66 and 1.70 in the temperature range of 80 K to 460 K, while Φb varied between 0.24 eV and 0.83 eV in the same temperature range. These variations of n and Φb can be attributed to the barrier height inhomogeneity in the device. Although PR is generally used in biological applications such as cell culture, it has been observed that such Co/phenol red/n-Si/Al devices may be critical candidates for use in thermal sensors and photodiode applications due to their photoresponse and low-temperature operation for reverse-bias I–V measurements. Furthermore, PR is an alternative to semiconductor materials commonly used in such applications.

The temperature dependence of the current–voltage and room temperature capacitance–voltage measurements of Co/aniline blue/ n-Si sandwich-type rectifying device was investigated.Furthermore, the effects of the illumination on the current–voltage measurements were tested with 100 mW/cm2 light intensity, and it was seen that Co/aniline blue/ n-Si sandwich-type device showed a clear response to illumination, and it may be a candidate for solar cells or photodiode applications. The rectifying device parameters, such as the barrier height (Ф), the ideality factor ( n), the rectification ratio, and the series resistance ( Rs), were obtained as a function of temperature using thermionic emission, Cheung function, and Norde function. The interface state densities versus energy were obtained. The Richardson constant ( A*) obtained from the In( Io/ T2) versus 1000/ T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height[Formula: see text] and the standard deviation ( σo) were calculated using the apparent Schottky barrier height Фap versus 1/2 kT plot. So, it has been found to be 1.08 eV and 0.15 V (260–460 K) and 0.79 eV and 0.10 V (100–260 K), respectively. The results were discussed based on the presence of two Gaussian distributions of Фb potential in the contact area of Co/aniline blue/ n-Si/Al device.

Orta Doğu’daki en önemli devletlerden biri olan İran, tarihsel kaygıları ve ekonomik çıkarlarını bir araya getirerek dış politikasını şekillendirmektedir. Kuşatılma sendromunun etkisiyle güvenliğini sınırları dışından başlatmayı arzularken ideolojik veya mezhepsel yakınlık duyduğu grupları da yanına çekmek istemektedir. Yemen’de Husiler üzerinden denetim sağlamayı amaçlayan İran, bir yandan Bab’ül Mendep Boğazı’nı kontrol altında tutarak enerji güvenliğini sağlamaya çalışmakta diğer yandan Sünniliğin önemli bir temsilcisi olan Suudi Arabistan’ı devre dışı bırakmak istemektedir. İran’ın güvenlik politikalarında Yemen’in rolünü irdelemek isteyen bu çalışmada; Yemen’in stratejik konumu ve önemi, Husiler ve İran’la ilişkileri, İran’ın güvenlik politikalarında Şiilik ve son olarak Suudi Arabistan-İran rekabetinin Yemen’deki yansımaları tartışılacaktır. Iran, one of the most important states in the Middle East, shapes its foreign policy by bringing together historical concerns and economic interests. While it wants to initiate its security from outside the borders by the influence of the siege syndrome/siege mentality it also wants to gain groups which is close to its ideological or sectarian identity. Aiming to provide control over the Houthis in Yemen, Iran is trying to maintain energy security by controlling Bab el-Mandeb Strait and neutralize the Saudi Arabia, an important representative of Sunni. This study discusses the strategic importance of Yemen, the relations between the Houthis and Iran, Shi’ism in Iran’s security policies and finally the reflections of the Saudi Arabia-Iranian rivalry in Yemen while aiming to analyze the role of Yemen in Iran’s security policies

Yüksek Lisans Tezi, Müslümanlar Arap yarımadasının dışında fetihler gerçekleştirmeye başladıkları andan itibaren farklı dini ve felsefî akımlarla görüşleri ile karşı karşıya kalmıştır. Bu farklı akımlar karşısında varlıklarını sürdürmek ve fethettikleri bölgelerde kalıcılıklarını sağlamak için bu akımların fikirlerini öğrenip, onlara karşı tez üretmek durumunda kalan Müslümanlar bu akımların eserlerinin birçoğunu tercüme etmişlerdir. İlk başlarda matematik, fizik, tıp gibi alanlarla sınırlı olan çeviri faliyetleri ilerleyen süreçte bu akımların fikri altyapısını öğrenmek ve onlara karşı cevaplar üretmek için felsefe ve düşünce sistemlerini açıklayan kitaplar olarak devam etmiştir. İmam Mâtürîdî’nin yaşadığı bölge olan Semerkant, dünyanın önemli ticaret noktalarından birisi olması sebebiyle bu farklı akımların bol miktarda bulunduğu bir bölgedir. Bölgede ki bu çeşitlilik İmam Mâtürîdî’nin düşünce hayatına da yansımış ve tefsirini tefsir tarihinin özgün bir parçası yapmıştır. Kendisinden önceki tefsirlerden farklı olarak dönemin önemli felsefî akımları olan (Dehriyye, Seneviyye gibi akımlara ve sudûr nazariyesine tefsirinde bolca yer veren İmam Mâtürîdî, Kitâbü’t-Tevhîd’de bu akımlara dair yaptığı eleştirileri tefsirine yansıtmıştır. Biz bu çalışmamız da İmam Mâtürîdî’nin filozoflara dair bakış açısını Te'vîlâtü'l-Kur'ân üzerinden ortaya koymaya çalıştık., Muslims have been confronted with the views of different religions and movements from the moment they started to make conquests outside the Arabian Peninsula. To maintain their existence in the face of these different fictional trends and to ensure their permanence in the regions they conquered, Muslims who had to learn the ideas of these fictional trends and produce thesis against them translated many of the works of these trends. Translation activities, which were initially limited to fields such as mathematics, physics, and medicine, continued with books on subjects like philosophy and thought systems to explain the intellectual infrastructure of these fictional trends and in order to produce answers against them. Samarkand, the region where Imam Maturidi lived, is a region where these different movements are abundant, as it is one of the significant trade points of the world. This diversity in the region was also reflected in the intellectual life of Imam Maturidi and made his tafsir an original part of the history of tafsir. Different from the tafsirs before him, Imam Maturidi gave an extensive elaboration on the views of the significant movements of the period (Dahriyyah, Sanawiyyah, Sudur Theory) in his tafsir. In this research, we tried to reveal the point of view of Imam Maturidi on the philosophers through the Te'vilatu'l-Qur'an.

In this paper, new record distributional data on a rare Heteroptera (Hemiptera) species, Grypocoris syriacus Reuter, 1896 from northern Anatolia (Gerede district, Bolu province) are given.

Dogru ve hizli ilkyardim uygulamalari, sekelsiz sagkalim oranlarini %50’ye kadar arttirabilir. Bu baglamda, sagkalimda, etkili ilkyardimin onemini vurgulayan ve saglik profesyonellerinde bu farkindaligi arttiran guncel kaynaklara ihtiyac vardir. Bu kitapta, ilkyardimin temel ilke ve uygulamalari, temel ve ileri yasam destegi, tibbi acil durumlarda ve diger acil durumlarda ilkyardim ve kanita dayali uygulamalar gibi konular uluslararasi 2020 ilkyardim rehberleri cercevesinde uzmanlar tarafindan ele alinmistir.

We reported the optoelectronic performance of organic/inorganic hybrid junction photodiode based on Eosin y/silicon (Si). For this purpose, we fabricated Eosin y/n-Si and Eosin y/p-Si structures and demonstrated that both devices exhibited strong photodiode characteristics to the increasing light power depending on current–voltage (I–V) measurements. Furthermore, the XRD and SEM analyses of Eosin y film were performed to analyze structural and topographical features of the film. The electrical measurements of Eosin y/n-Si and Eosin y/p-Si photodiodes were carried out in both dark and under various illumination intensities in the range of 100–400 mW/cm2. The main device parameters, such as ideality factor, barrier height, and responsivities of both devices, were determined from the I–V characteristics. The obtained photocurrent values in reverse biases are higher than the dark current at the same reverse bias for both Eosin y/n-Si and Eosin y/p-Si photodiodes. So, this confirmed that light produces photocurrent due to the formation of electron–hole pairs as a result of light absorption in the Eosin y film. Moreover, the C–V measurements were performed on both photodiodes to characterize capacitive performance of the Eosin y films. The fabricated photodiodes based on Eosin y thin films present great promise for future optoelectronic device applications.

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International audience; Silver is a non-essential metal used in medical applications as an antimicrobial agent, but it is also toxic for biological systems. To investigate the molecular basis of silver resistance in yeast, we employed evolutionary engineering using successive batch cultures at gradually increased silver stress levels up to 0.25-mM AgNO(3)in 29 populations and obtained highly silver-resistant and genetically stableSaccharomyces cerevisiaestrains. Cross-resistance analysis results indicated that the silver-resistant mutants also gained resistance against copper and oxidative stress. Growth physiological analysis results revealed that the highly silver-resistant evolved strain 2E was not significantly inhibited by silver stress, unlike the reference strain. Genomic and transcriptomic analysis results revealed that there were mutations and/or significant changes in the expression levels of the genes involved in cell wall integrity, cellular respiration, oxidative metabolism, copper homeostasis, endocytosis and vesicular transport activities. Particularly the missense mutation in theRLM1gene encoding a transcription factor involved in the maintenance of cell wall integrity and with 707 potential gene targets might have a key role in the high silver resistance of 2E, along with its improved cell wall integrity, as confirmed by the lyticase sensitivity assay results. In conclusion, the comparative physiological, transcriptomic and genomic analysis results of the silver-resistantS. cerevisiaestrain revealed potential key factors that will help understand the complex molecular mechanisms of silver resistance in yeast.

Aydoğan, Şakir, Ardahan Üniversitesi Mühendislik Fakültesi Elektrik Elektronik Mühendisliği Bölümü, Makale, This study focused on the structural, optical and electrical features of chitosan organic layer obtained by spin coating technique both on glass and n-Si substrates. XRD results indicated that chitosan has polycrystalline orthorhombic nature. While optical transmittance spectrum of the chitosan organic layer exhibited an increasing tendency in the visible range, band gap energy value was calculated as 4.23 eV for chitosan by UV–Vis spec trometer. Electrical performance of organic chitosan layer in a Schottky device was studied by fabricating of Au/ n-Si and Au/chitosan/n-Si devices. The suitability of Au/chitosan/n-Si sandwich devices in optoelectronic ap plications were tested under dark and illumination conditions. The Au/chitosan/n-Si sandwich device exhibits good photodiode characteristics. Furthermore, the effect of X-ray radiation doses on the electrical properties of the Au/chitosan/n-Si sandwich device was also investigated. In order to get information about electrical char acteristics as a function of X-ray radiation doses, Au/chitosan/n-Si sandwich device was exposed to X-ray ra diation in same exposure time and various doses. The results highlighted that the performance of the device with chitosan organic interface layer deteriorated with increasing radiation dose. In addition, the transportation mechanism of chitosan based Schottky device was discussed in details.

Polycystic ovary syndrome (PCOS) is the most common cause of anovulatory infertility. However, they sustained fertility at an advanced age.

Some X-ray irradiation-induced electrical characteristics of the Au/anthraquinone/p-Si and the Au/pyridine/p-Si junction devices have been investigated. The experimental ideality factors increased for both devices with increasing irradiation dose from 25 Gy to 150 Gy. These values ranged from 1.10 to 1.52 for Au/anthraquinone/p-Si and from 1.46 to 1.77 for Au/pyridine/p-Si, respectively. Furthermore, the barrier height of Au/anthraquinone/p-Si increased with increasing irradiation dose from 0.75 to 0.91 eV, whereas it displayed about a constant value for Au/pyridine/p-Si. In addition, the series resistance of both devices increased with x-ray dose too. The increase in the series resistance with x-ray irradiation has been attributed to the decrease in the active dopant densities. It was seen that the ionization damage is effective on most of the junction characteristics. The leakage current of the Au/anthraquinone/p-Si device decreased with x-ray irradiation since the irradiation induced the formation of electron-hole pairs and hydroquinone structure, and thus some of them are trapped by the interface states. The degradation of the I-V curves of Au/pyridine/p-Si/Al device is attributed to the variation of the surface or interface states distribution for the devices. The reverse and forward bias currents relatively increased after x-ray irradiation because of the decrease in bulk lifetime. In addition, ATR-FTIR spectra of anthraquinone and pyridine films showed that pyridine is more stable than anthraquinone under x-ray irradiation.

In this study, the phenol red (PR) dye film has been deposited on n-type silicon wafer and SEM, XRD measurements of the film have taken. Then, the PR/n-Si photodiode has been fabricated and (dark) electrical and photoresponse characterization has been analysed. The current-Voltage (I-V) measurements have been carried out at varied light power ranging from 100 mW/cm2 to 400 mW/cm2. Rectification ratios (RR) have been determined as a function of illumination intensities and they are determined as 115.47 for 100 mW/cm2 and 30.26 for 400 100 mW/cm2, respectively. The ideality factor and the barrier height of the Co/PR/n-Si photodiode have been determined as 2.80 and 0.52 eV, respectively in dark. Therefore, it has been seen that the PR/n-Si photodiode performances are strongly dependent on the incident optical power. Namely, the current density has increased remarkably with the power of light at the same reverse bias voltage and this behavior is explained by strong capability of converting a light signal into an electrical for the PR/n-Si photodiode device. Responsivity (R) and detectivity (D*) of the PR/n-Si photodiode are also plotted as a function of illumination intensities for reverse biases and it is found that both parameters are dependent on the illumination intensity. Finally, the capacitance–voltage (C-V) characteristics of the device have been carried out at various frequencies. Obtained experimental results indicate that the PR dye can be used in various optoelectronic applications.

A poly(phenoxy-imine)/p-silicon rectifying device was fabricated and the current-voltage characteristics of the device were examined as a function of temperature in the 40–300 K range. The temperature dependence of the main parameters, namely, the barrier height (Φb), ideality factor (η), reverse current (I0) and series resistance (Rs), were investigated. It was seen that the Φb and the I0 values of the device increased with increasing temperature, while the η and the Rs values decreased. The temperature dependences of the Φb and the η were interpreted by the assumption of a Gaussian distribution of the barrier heights arising from barrier inhomogeneities that prevailed at the interface of the poly(phenoxyimine)/p-silicon. From ln(I0/T2) vs. 1/ηT plot, the values of the activation energy (Ea) and Richardson constant (A*) were calculated as 0.324 eV and 2.84×10-7 A cm-2K-2, respectively. The experimental value of the Rs from the forward current-voltage plots decreased with an increase in the temperature.

OBJECTIVE: To evaluate gynecological risk factors in patients with and without osteoporosis who are older than 50 years of age.METHODS: One hundred and twenty seven patients with postmenopausal-senile osteoporosis and 53 non-osteoporotic volunteers were included. The subjects were examined in terms of age, body mass index (BMI), risk factors like age at menarche, age at menopause, number of births, numbers of miscarriage and curettage, and history of breast-feeding,RESULTS: The mean age was statistically higher and the mean BMI level was statistically lower in patients (p, AMAÇ: Bu çalışmada 50 yaş üzeri osteoporozu olan ve olmayan olgularda osteoporoz için jinekolojik risk faktörlerini değerlendirmek amaçlanmıştır.YÖNTEMLER: Çalışmaya postmenopozal-senil osteoporoz tanısı alan 127 hasta ve 53 osteoporozu olmayan gönüllü alındı. Katılımcılar yaş, vücut kitle indeksi (VKİ), menarş yaşı, menopoz yaşı, doğum sayısı, düşük-küretaj sayısı, emzirme hikayesi gibi jinekolojik risk faktörleri açısından sorgulandı.BULGULAR: Hastaların yaş ortalaması kontrollere göre daha yüksek, VKİ değerleri daha düşüktü (p

The iron oxide (Fe3O4) magnetic nanoparticles were synthesized via the organic solution phase method and used for the fabrication of the Au/Fe3O4/p-Si rectifying device. The variation in electrical characteristics of the Au/Fe3O4/p-Si Schottky contacts was investigated as a function of temperature using current–voltage (I–V) measurements in the temperature range of 40 K to 370 K (−233 °C to 97 °C). The I–V characteristics of the contacts indicated extremely strong temperature dependence. The double distribution of barrier heights was found in the Fe3O4/p-Si Schottky diodes from the I–V-T measurements. The Schottky barrier height (Φb) increases with the increasing temperature, while the ideality factor n decreases. The nonlinearity in the activation energy plot was observed, which is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the Fe3O4/p-Si interface. The Richardson constant measured from the temperature-dependent I–V characteristics is 2.99 A/K2 cm2, which is lower than the ideal value.

The Fe 3 O 4 /Si junctions have been fabricated. The Fe 3 O 4 NPs have been characterized by using TEM and XRD. Detailed study of the current–voltage ( I – V ) plots and capacitance–voltage measurements of the device (at f = 500 kHz) has been executed. The characteristic parameters of the structure such as ideality factor, barrier height, and series resistance have been calculated from the I – V measurements. The rectification ratio was determined to be ∼3 × 10 4 . The I – V characteristics clearly reveal the mechanism as ohmic at low voltage and that of trap-filled space charge limited current (SCLC) at higher voltage. The effect of X-ray irradiation on the junction characteristics has been studied using in situ current–voltage measurements. Diode parameters are found to vary as a function of the irradiation dose.

The elastic scattering of the halo nucleus 6He from heavy targets such as 197Au and 208Pb has been investigated in order to explain the Coulomb rainbow peak due to the Fresnel-type diffraction observed in the experimental data. In order to examine the role of nuclear potential to describe 6He + 197Au and 6He + 208Pb systems, we have used the no-core shell model, few-body and Gaussian-shaped density distributions at various energies. The microscopic real parts of the complex nuclear potential have been obtained by using the double-folding model for each of the density distribution and the phenomenological imaginary potentials have been taken as the standard Woods-Saxon shape. We have observed that fewbody and Gaussian-shaped density distributions have given standard Fresnel-type diffraction results, a classical scattering pattern with Coulomb rainbow peak whereas the nuclear potential obtained by using the no-core shell-model density distribution has provided the reduction at Fresnel peak and has given more consistent results with the experimental data.

We present an alternative approach, the asymptotic iteration method, to solve the two-dimensional radial Schrödinger equation for [Formula: see text] potential in a magnetic field. The energy eigenvalues for arbitrary Larmor frequencies ranging from ωL = 0.1 to 10.0 are obtained and the results are compared with the nonmagnetic field case, ωL = 0, in order to show the effect of the presence of the weak and strong magnetic fields on the energy eigenvalues. It is shown that the method presented in this paper provides the energy eigenvalues in a systematic way not only in the weak magnetic field but also in the strong magnetic field regions with any Larmor frequencies.

Most of the empirical papers researching the validity of Okun’s law have been assumed a symmetric relationship between change of unemployment and real output growth. However, the effect of real output growth on unemployment may be different in growth cycles expansion and contraction periods. This assumption which assumes a asymmetry in Okun’s law has been verified in the recent studies. In the study, whether Okun’s relationship is symmetric or not has been investigated for Turkish economy in the period 1950-2007 using annual time series data. Co-integration analyses including TAR and M-TAR models have been used to test the asymmetric relationship. The findings of the study have shown that Okun’s law is valid in the long run and this relationship is asymmetric for the Turkish economy.