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Abstract Twisted a pair of stacked two-dimensional materials exhibit many exotic electronic and photonic properties, leading to the emergence of flat-band superconductivity, moiré engineering and topological polaritons. These remarkable discoveries make twistronics the focus point of tremendous interest, but mostly limited to the concept of electrons, phonons or photons. Here, we present twist piezoelectricity as a fascinating paradigm to modulate polarization and electromechanical coupling by twisting precisely the stacked lithium niobate slabs due to the interlayer coupling effect. Particularly, the inversed and twisted bilayer lithium niobate is constructed to overcome the intrinsic mutual limitation of single crystals and giant effective electromechanical coupling coefficient $${k}_{t}^{2}$$ k t 2 is unveiled at magic angle of $$111^\circ$$ 11 1 ∘ , reaching 85.5%. Theoretical analysis based on mutual energy integrals shows well agreements with numerical and experimental results. Our work opens new venues to flexibly control multi-physics with magic angle, stimulating progress in wideband acoustic-electric, and acoustic-optic components, which has great potential in wireless communication, timing, sensing, and hybrid integrated photonics.

Abstract A reliable, efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics. Despite the impressive advances that have been made in developing 1.3-μm Si-based quantum dot (QD) lasers, extending the wavelength window to the widely used 1.55-μm telecommunication region remains difficult. In this study, we develop a novel photonic integration method of epitaxial growth of III-V on a wafer-scale InP-on-Si (100) (InPOS) heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si substrate. This ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth, namely lattice and domain mismatches. Using this approach, we achieved state-of-the-art performance of the electrically-pumped, continuous-wave (CW) 1.55-µm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm−2, and output power exceeding 155 mW per facet without facet coating in CW mode. CW lasing at 120 °C and pulsed lasing at over 130 °C were achieved. This generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.

Abstract By using a direct non-Nehari manifold method from (Tang and Cheng in J. Differ. Equ. 261:2384–2402, 2016), we obtain an existence result of ground-state sign-changing homoclinic solutions that only changes sign once and ground-state homoclinic solutions for a class of discrete nonlinear p-Laplacian equations with logarithmic nonlinearity. Moreover, we prove that the sign-changing ground-state energy is larger than twice the ground-state energy.

As ferroelectric materials, lithium tantalate and lithium niobate share similar material characteristics, such as a high Pockels effect and nonlinear optical coefficients. When compared to lithium niobate, lithium tantalate offers a higher optical damage threshold, a broader transparent window, and lower birefringence, making it a promising candidate for high-performance electro-optical photonic integrated devices. In this study, we design and successfully fabricate micro-ring resonators on an acoustic-grade lithium-tantalate-on-insulator wafer, demonstrating their tunability and dynamic modulation capabilities. Experimental results indicate that the achieved thin-film lithium tantalate based micro-ring resonator exhibits an intrinsic Q-factor of 8.4 × 105, corresponding to a waveguide propagation loss of 0.47 dB/cm and a tuning efficiency of 1.94 pm/V. More importantly, as compared to those based on thin-film lithium niobate, a much weaker photorefractive effect and drift phenomenon around the 1550 nm wavelength under a direct-current drive are observed in the present fabricated thin-film lithium tantalate micro-rings with a silicon oxide over-cladding and a tuning electrode on top.

Alternative polyadenylation (APA) is a widespread mechanism of gene regulation that generates mRNA isoforms with alternative 3' untranslated regions (3' UTRs). Our previous study has revealed the global 3' UTR shortening of host mRNAs through APA upon viral infection. However, how the dynamic changes in the APA landscape occur upon viral infection remains largely unknown. Here we further found that, the reduced protein abundance of CPSF6, one of the core 3' processing factors, promotes the usage of proximal poly(A) sites (pPASs) of many immune related genes in macrophages and fibroblasts upon viral infection. Shortening of the 3' UTR of these transcripts may improve their mRNA stability and translation efficiency, leading to the promotion of type I IFN (IFN-I) signalling-based antiviral immune responses. In addition, dysregulated expression of CPSF6 is also observed in many immune related physiological and pathological conditions, especially in various infections and cancers. Thus, the global APA dynamics of immune genes regulated by CPSF6, can fine-tune the antiviral response as well as the responses to other cellular stresses to maintain the tissue homeostasis, which may represent a novel regulatory mechanism for antiviral immunity.

Summary: Cancer cells usually exhibit shortened 3′ untranslated regions (UTRs) due to alternative polyadenylation (APA) to promote cell proliferation and migration. Upregulated CPSF6 leads to a systematic prolongation of 3′ UTRs, but CPSF6 expression in tumors is typically higher than that in healthy tissues. This contradictory observation suggests that it is necessary to investigate the underlying mechanism by which CPSF6 regulates APA switching in cancer. Here, we find that CPSF6 can undergo liquid-liquid phase separation (LLPS), and elevated LLPS is associated with the preferential usage of the distal poly(A) sites. CLK2, a kinase upregulated in cancer cells, destructs CPSF6 LLPS by phosphorylating its arginine/serine-like domain. The reduction of CPSF6 LLPS can lead to a shortened 3′ UTR of cell-cycle-related genes and accelerate cell proliferation. These results suggest that CPSF6 LLPS, rather than its expression level, may be responsible for APA regulation in cancer cells.

Heterogeneous integration of $\beta $ -Ga2O3 with Si substrate is considered as an effective and low-cost technology for the thermal management of $\beta $ -Ga2O3 electrical devices. In this work, an isotype heterojunction of n-Ga2O3/n+-Si (Ga2O3/Si) was fabricated by surface activated bonding in which an amorphous layer was induced by ion beam bombardment. The current density of Ga2O3/Si Schottky barrier diodes (SBDs) are about two orders of magnitude lower than that of Ga2O3 bulk SBDs at 2.8 V due to the influence of amorphous layer. The results are consistent with the simulation results when $\beta $ -Ga2O3 Mole Fraction (MF $=\,\,\text{n}(\beta $ -Ga2O3)/[ $\text{n}(\beta $ -Ga2O3) + n(SiO2)]) and thickness of amorphous layers (Tox) are set at 0.83 and 3 nm, respectively. Furthermore, devices with different MF and ${\mathrm{ T}}_{\mathrm{ ox}}$ were simulated based on the nonlocal tunneling model by Sentaurus TCAD. The decrease of $\beta $ -Ga2O3 Mole Fraction and increase of amorphous layers thickness in the hetero-interface of Ga2O3/Si SBDs lead to a dramatic degeneration of current density and specific on-resistance in Ga2O3/Si SBDs. These results may provide some guidance for improvement of vertical heterogeneous integration $\beta $ -Ga2O3 devices performance.

Abstract Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication, sensing, and metrology applications. The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible, such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume. Silicon nitride has become the leading CMOS platform for integrated soliton devices, however, it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation. Other materials have emerged such as AlN, LiNbO3, AlGaAs and GaP that exhibit simultaneous second- and third-order nonlinearities. Here, we show that silicon carbide (SiC) -- already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics, MOSFET, and MEMS due to its wide bandgap properties, excellent mechanical properties, piezoelectricity and chemical inertia -- is a new competitive CMOS-compatible platform for nonlinear photonics. High-quality-factor microresonators (Q = 4 × 106) are fabricated on 4H-SiC-on-insulator thin films, where a single soliton microcomb is generated. In addition, we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of SiC. Our work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform.

The semiconductor, β-Ga2O3 is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap (∼4.9 eV) and large Baliga's figure of merit. However, the thermal conductivity of β-Ga2O3 is much lower than that of other wide/ultra-wide bandgap semiconductors, such as SiC and GaN, which results in the deterioration of β-Ga2O3-based device performance and reliability due to self-heating. To overcome this problem, a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline β-Ga2O3 thin films on a highly thermally conductive SiC substrate. Characterization of the transferred β-Ga2O3 thin film indicated a uniform thickness to within ±2.01%, a smooth surface with a roughness of 0.2 nm, and good crystalline quality with an X-ray rocking curves (XRC) full width at half maximum of 80 arcsec. Transient thermoreflectance measurements were employed to investigate the thermal properties. The thermal performance of the fabricated β-Ga2O3/SiC heterostructure was effectively improved in comparison with that of the β-Ga2O3 bulk wafer, and the effective thermal boundary resistance could be further reduced to 7.5 m2K/GW by a post-annealing process. Schottky barrier diodes (SBDs) were fabricated on both a β-Ga2O3/SiC heterostructured material and a β-Ga2O3 bulk wafer. Infrared thermal imaging revealed the temperature increase of the SBDs on β-Ga2O3/SiC to be one quarter that on the β-Ga2O3 bulk wafer with the same applied power, which suggests that the combination of the β-Ga2O3 thin film and SiC substrate with high thermal conductivity promotes heat dissipation in β-Ga2O3-based devices.

Integrated photonic quantum circuits (IPQCs) have attracted increasing attention in recent years due to their widespread applications in quantum information science. While the most envisioned quantum technologies such as quantum communications, quantum computer and quantum simulations have placed a strict constraint on the scalability of chip-integrated quantum light sources. By introducing size-confined nanostructures or crystal imperfections, low-dimensional semiconductors have been broadly explored as chip-scale deterministic single-photon sources (SPSs). Thus far a variety of chip-integrated deterministic SPSs have been investigated across both monolithic and hybrid photonic platforms, including molecules, quantum dots, color centers and two-dimensional materials. With the rapid development of the chip-scale generation of single photons with deterministic quantum emitters, the field of IPQCs has raised new challenges and opportunities. In this paper, we highlight recent progress in the development of waveguide-coupled deterministic SPSs towards scalable IPQCs, and review the post-growth tuning techniques that are specifically developed to engineer the optical properties of these WG-coupled SPSs. Future prospects on stringent requirement for the quantum engineering toolbox in the burgeoning field of integrated photonics are also discussed.

Abstract The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here, photonic microresonators with a mean Q factor of 6.75 × 106 were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform, as determined by a statistical analysis of tens of resonances. Using these devices, broadband frequency conversions, including second-, third-, and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time, to the best of our knowledge. Meanwhile, by engineering the dispersion properties of the SiC microresonator, we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.

4H‐silicon carbide (SiC) integrated platforms have shown great potential in quantum and nonlinear photonics. However, the thermal properties of 4H‐SiC waveguides are still unknown, even though thermo‐optic effects can play an important role in fundamental measurements and practical applications. Herein, the thermo‐optic effects in a 4H‐SiC microring resonator are comprehensively studied, by means of both temperature tuning and self‐heating. The thermo‐optic coefficient and the ratio between the thermal absorption and the thermal diffusion of 4H‐SiC are quantitatively measured to be 4.21×10−5 K−1 and 14.9 K W−1, respectively. Considering the acquired thermal properties, Kerr‐nonlinearity‐based dual‐pump optical parametric oscillation (OPO) is experimentally achieved, and thus, it is demonstrated that broadband solitons can feasibly be generated through thermal tuning of 4H‐SiC‐on‐insulator (SiCOI) microring resonators.

Hybrid integration of silicon photonics with lithium niobate (LN) devices provides a promising route to enable an excellent modulation performance in silicon photonic integrated circuits. To realize this purpose, a substrate containing a Si film on an LNOI substrate, called Si on the LNOI structure, was analyzed and fabricated. The mode propagation properties in the Si-on-LNOI structure were simulated in detail and a vertical adiabatic coupler (VAC) between the Si waveguide and LN waveguide was simulated to help in the determination of the dimension of this structure. A 4-inch wafer-scale Si on an LNOI hybrid structure was fabricated through the ion-cut process. This structure has a single-crystalline quality, high thickness uniformity, smooth surface, and sharp bonding interface, which are practical for realizing low loss and high coupling efficiency.

We report four-wave mixing with different polarization and spatial modes in a single 4H-silicon carbide photonic device. Our device shows great potential to perform high-dimensional multiplexing for optical communication and high-dimensional entanglement in quantum networks. We use a polarization-insensitive grating coupler and a multimode microring resonator that supports three polarization and spatial mode resonances. Finally, we show the polarization dependence of the third-order nonlinearity of 4H-silicon carbide. The measured nonlinear refractive index of the light polarized along the extraordinary axis, which is n2,TM = (13.1 ± 0.7) × 10−19 m2/W, is twice as large as that of the light polarized along the ordinary plane, n2,TE = (7.0 ± 0.3) × 10−19 m2/W, indicating that the extraordinary polarization is more efficient for nonlinear experiments in the 4H-silicon carbide integrated platforms as compared to the ordinary polarization.

Fabrication of wafer-scale nanogratings for X-ray spectroscopy is difficult especially for very high line densities. The authors use vacancy epitaxy to fabricate sub-50-nm-periodicity gratings, coated with multilayers for efficient operation, for use in ultra-high resolution x-ray spectroscopy.

Abstract Light manipulation has drawn great attention in photodetectors towards the specific applications with broadband or spectra-selective enhancement in photo-responsivity or conversion efficiency. In this work, a broadband light regulation was realized in photodetectors with the improved spectra-selective photo-responsivity by the optimally fabricated dielectric microcavity arrays (MCAs) on the top of devices. Both experimental and theoretical results reveal that the light absorption enhancement in the cavities is responsible for the improved sensitivity in the detectors, which originated from the light confinement of the whispering-gallery-mode (WGM) resonances and the subsequent photon coupling into active layer through the leaky modes of resonances. In addition, the absorption enhancements in specific wavelength regions were controllably accomplished by manipulating the resonance properties through varying the effective optical length of the cavities. Consequently, a responsivity enhancement up to 25% within the commonly used optical communication and sensing region (800 to 980 nm) was achieved in the MCA-decorated silicon positive-intrinsic-negative (PIN) devices compared with the control ones. This work well demonstrated that the leaky modes of WGM resonant dielectric cavity arrays can effectively improve the light trapping and thus responsivity in broadband or selective spectra for photodetection and will enable future exploration of their applications in other photoelectric conversion devices.

Heterogeneous integration of compound semiconductors on a Si platform leads to advanced device applications in the field of Si photonics and high frequency electronics. However, the unavoidable bubbles formed at the bonding interface are detrimental for achieving a high yield of dissimilar semiconductor integration by the direct wafer bonding technology. In this work, lateral outgassing surface trenches (LOTs) are introduced to efficiently inhibit the bubbles. It is found that the chemical reactions in InP–Si bonding are similar to those in Si–Si bonding, and the generated gas can escape via the LOTs. The outgassing efficiency is dominated by LOTs’ spacing, and moreover, the relationship between bubble formation and the LOT’s structure is well described by a thermodynamic model. With the method explored in this work, a 2-in. bubble-free crystalline InP thin film integrated on the Si substrate with LOTs is obtained by the ion-slicing and wafer bonding technology. The quantum well active region grown on this Si-based InP film shows a superior photoemission efficiency, and it is found to be 65% as compared to its bulk counterpart.

Ion-cutting of piezoelectric LiNbO3 (LN) thin film provides a material platform for the design and fabrication of novel integrated photonics and RF MEMS devices. In this paper, the ion-slicing mechanisms of He-implanted LN with different orientations are investigated. The anisotropy of film exfoliation is observed on LN wafers with different orientations. The Z-cut LN shows regular surface blistering and “plate-like” exfoliation, while the Y-cut LN shows the unique “rolled-up” exfoliation. Two types of defect, i.e. the pressure-related plateau defect and the stress-related crack defect, are observed to contribute to the film exfoliation. Moreover, the defect evolution in H-implanted LN is investigated. In comparison with the He-implanted LN, implanted H ions are mainly trapped by O-H bond and the implantation-induced strain is not strong enough, which are inadequate to form the continuous crack. Therefore the H ions are not favorable for the mass production of LNOI substrates.

Heterogeneous integration of materials pave a new way for the development of the microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on insulator (SOI) structures, i.e., Si (100)-on-Si (111) and Si (111)-on-Si (100), were prepared by the smart-cut technique, which is consist of ion-slicing and wafer bonding. The precise calculation of the lattice strain of the transferred films without the epitaxial matching relationship to the substrate was demonstrated based on X-ray diffraction (XRD) measurements. The XRD and Raman measurement results suggest that the transferred films possess single crystalline quality. With a chemical mechanical polishing (CMP) process, the surface roughness of the transferred thin films can be reduced from 5.57 nm to 0.30 nm. The 4-inch GaN thin film epitaxially grown on the as-prepared hybrid SOI of Si (111)-on-Si (100) by metalorganic chemical vapor deposition (MOCVD) is of improved quality with a full width at half maximum (FWHM) of 672.54 arcsec extracted from the XRD rocking curve and small surface roughness of 0.40 nm. The wafer-scale GaN on Si (111)-on-Si (100) can serve as a potential platform for the one chip integration of GaN-based high electron mobility transistors (HEMT) or photonics with the Si (100)-based complementary metal oxide semiconductor (CMOS).

The memory structures Pt/Al2O3/(TiO2)x(Al2O3)1−x/Al2O3/p-Si(nominal composition x = 0.05, 0.50 and 0.70) were fabricated by using rf-magnetron sputtering and atomic layer deposition techniques, in which the dielectric constant and the bottom of the conduction band of the high-k composite (TiO2)x(Al2O3)1−x were adjusted by controlling the partial composition of Al2O3. With the largest dielectric constant and the lowest deviation from the bottom of the conduction band of Si, (TiO2)0.7(Al2O3)0.3 memory devices show the largest memory window of 7.54 V, the fast programming/erasing speed and excellent endurance and retention characteristics, which were ascribed to the special structural design, proper combination of dielectric constant and band alignment in the high-k composite (TiO2)0.7(Al2O3)0.3.

In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO3 substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling behaviors with the resulting tunneling electroresistance value reaching about 102 in ultrathin BTO films (∼1.2 nm) at room temperature. Moreover, local poling areas with different conductivity are finally achieved by controlling the relative proportion of upward and downward domains, and different poling areas exhibit stable transport properties.

We report a simple and potentially mass productive technique to fabricate horizontal single crystalline Si nanowire arrays on insulating substrate based on a self-organized pattern formation mechanism during Xe+ ion beam irradiation of Si-on-insulator material. A periodic ripple surface pattern is created by ion irradiation at 67o incidence angle to the surface normal. The transfer of this pattern to the oxide interface results in an array of electrically disconnected parallel ordered Si nanowires on the insulating oxide. Doping of the nanowires was demonstrated by boron ion implantation and annealing. The morphology and resistivity of the narrow nanowires with large aspect ratio were analysed by cross sectional transmission electron microscopy and scanning spreading resistance microscopy, respectively. Physical reasons of the observed low carrier activation are discussed.

Four new lactones, including hypomonacid A (1) and hypomonone A–C (4–6), as well as nine known polyketide analogues (2–3 and 7–13) were obtained from endophytic fungus Hypomontagnella sp. TX-09 derived from Santalum album. Their planar structures were extensively established by analysing HRESIMS and NMR spectroscopic data. Stereochemistry of new compounds was determined by X-ray diffraction analysis and modified Mosher’s method in combination with quantum-chemical ECD calculation. In addition, compounds 1 and 2 showed anti-inflammatory activity by inhibition of lipopolysaccharide (LPS)-induced NO production in RAW264.7 cells at 50 μmol/L without cytotoxicity. Among them, compound 1 inhibited the production of LPS-stimulated inflammation in mouse macrophage RAW264.7 cells by suppressing the expression of iNOS, TNF-α, IL-1β, and IL-6.

Abstract WSGP has demonstrated significant potential for various bioactive effects. However, limited research has explored their anti-ulcerative colitis (UC) effects and mechanism on the colonic system and gut microbial metabolites. We evaluated the ameliorative effects of WSGP on the UC mice model. Using H&E to assess histological injury of colon morphology, AB-PAS staining to detect mucin secretion from goblet cells and the mucous layer, IF to evaluate the expression of intercellular tight junction proteins, ELISA to measure inflammatory factors, WB analysis to measure protein expression of inflammatory signaling pathways, RT-qPCR to quantify gene transcription of inflammatory factors, and LC-MS to analyze metabolites in mouse cecum contents. WSGP supplementation increased food intake, body weight, and colon length while reducing disease activity and histological scores in colitis-afflicted mice. WSGP mitigated colonic tissue damage and restored intestinal barrier integrity by suppressing NF-κB/STAT3 signaling, thereby decreasing gene transcription, protein expression of proinflammatory factors, and nitric oxide production. Additionally, WSGP improved UC by altering the variety of intestinal microbial metabolites. This study demonstrates that WSGP supplementation attenuates UC mice by suppressing the NF-κB/STAT3 signaling pathway, enhancing mucosal barrier function, reducing pro-inflammatory cytokines, and modulating gut microbial metabolites.