1. Electron behavior in topological insulator based P-N overlayer interfaces
- Author
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Wray, L. A., Neupane, M., Xu, S. -Y., Xia, Y. -Q., Fedorov, A. V., Lin, H., Basak, S., Bansil, A., Hor, Y. S., Cava, R. J., and Hasan, M. Z.
- Subjects
Condensed Matter - Materials Science - Abstract
Topological insulators (TIs) are novel materials that manifest spin-polarized Dirac states on their surfaces or at interfaces made with conventional matter. We have measured the electron kinetics of bulk doped TI Bi$_2$Se$_3$ with angle resolved photoemission spectroscopy while depositing cathodic and anodic adatoms on the TI surfaces to add charge carriers of the opposite sign from bulk dopants. These P-N overlayer interfaces create Dirac point transport regimes and larger interface potentials than previous N-N type surface deposition studies, revealing unconventional Rashba-like and surface-bulk electron interactions, and an unusual characteristic distribution of spectral weight near the Dirac point in TI Dirac point interfaces. The electronic structures of P-N doped topological interfaces observed in these experiments are an important step towards the understanding of solid interfaces with topological materials., Comment: Submitted to Phys. Rev. B. 12 pages, including supplemental material. This is a substantially revised version of arXiv:1105.4794
- Published
- 2012