1. Nanocomposites of ferrocenyl-modified gold clusters and semiconducting polymers that integrate field-effect transistor and flash memory in a single neuromorphic device
- Author
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Singh, Deepa, Gunawardene, Praveen N., Workentin, Mark S., and Fanchini, Giovanni
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
We demonstrate that electroactive thin films incorporating semiconducting polymers and deterministic functionalized gold nanoclusters (ncAu25) lead to integration of the functions of resistive memory device and field-effect transistor (FETs) within a single component (mem-transistor) in a neuromorphic system. Memristor functions originate from ferrocenyl-modified gold nanoclusters (ncAu25-Fc) embedded in polymethyl-methacrylate (PMMA) and devices optimized for maximum 1/0 'flash' memory effect are found to contain 15 wt% ncAu25-Fc. Integrated memristor and neuromorphic functions are obtained by replacing PMMA with poly(3-hexylthiophene) (P3HT) in the active layer, from which transistor effects are derived. Based on the energy band diagrams of ncAu25, PMMA and P3HT, percolation theory is used to explain the memristor 1/0 on/off ratio as a function of ncAu25-Fc concentration. The use of ncAu25-Fc with charge-tunable, ferrocene-modified, ligands is critical toward better cluster-polymer interfaces. Our work shows that nanostructures of polymers and metalorganic frameworks bear strong potential towards neuromorphic devices and the circuital simplification of data storage technology., Comment: The following article has been accepted in Applied Physics Letters. After it is published, it will be found at https://pubs.aip.org/aip/apl with DOI 10.1063/5.0219013 Copyright (2024) D. Singh, P.N. Gunawardene, M.S. Workentin & G. Fanchini. This article is distributed under a CC BY-NC-ND License. https://creativecommons.org/licenses/by-nc-nd/4.0. 15 pages, 5 figures
- Published
- 2024
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