56 results on '"Wei, Chih-I"'
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2. Low landing energy as an enabler for optimal contour based OPC modeling in the EUV era
3. Principal components and optimal feature vectors of EUVL stochastic variability: applications of Karhunen-Loève expansion to efficient estimation of stochastic failure probabilities and stochastic metrics
4. High-NA EUV single patterning of advanced metal logic nodes: inverse lithography techniques in combination with alternative mask absorbers
5. Application of SONR for a better OPC model with a EUV curvilinear photomask
6. Principal components and optimal feature vectors of EUVL stochastic variability: applications of Karhunen-Loève expansion to efficient estimation of stochastic failure probabilities and stochastic metrics
7. EUV SRAFs printing modeling and verification in 2D hole array
8. Application of resolution enhancement techniques at high NA EUV for next generation DRAM patterning
9. Compact modeling of stochastics and application in OPC
10. Importance sampling in Gaussian random field EUV stochastic model for quantification of stochastic variability of EUV vias
11. Patterning assessment using 0.33NA EUV single mask for next generation DRAM manufacturing
12. Single mask solution to pattern BLP and SNLP using 0.33NA EUV for next-generation DRAM manufacturing
13. EUV SRAFs printing modeling with bright field mask
14. Calibration of Gaussian random field stochastic EUV models
15. E-beam metrology-based EUVL aberration monitoring
16. EUV based multi-patterning schemes for advanced DRAM nodes
17. Calibration and application of Gaussian random field models for exposure and resist stochastic in EUV lithography
18. Compact modeling of stochastics and application in OPC
19. Application of resolution enhancement techniques at high NA EUV for next generation DRAM patterning
20. Patterning assessment using 0.33NA EUV single mask for next generation DRAM manufacturing
21. Single mask solution to pattern BLP and SNLP using 0.33NA EUV for next-generation DRAM manufacturing
22. Better prediction on patterning failure mode with hotspot aware OPC modeling
23. Probability prediction of EUV process failure due to resist-exposure stochastic: applications of Gaussian random fields excursions and Rice's formula
24. Realizing more accurate OPC models by utilizing SEM contours
25. E-beam metrology-based EUVL aberration monitoring
26. Exploring alternative EUV mask absorber for iN5 self-aligned block and contact layers
27. Towards efficient and accurate cost functions for EUVL stochastic-aware OPC correction and verification: via failure probability versus image and process variation band metrics
28. Low landing energy as an enabler for optimal contour based OPC modeling in the EUV era
29. Probability prediction of EUV process failure due to resist-exposure stochastic: applications of Gaussian random fields excursions and Rice's formula
30. UDOF direct improvement by modulating mask absorber thickness
31. Patterning assessment using 0.33NA EUV single mask for next generation DRAM manufacturing.
32. Application of resolution enhancement techniques at high NA EUV for next generation DRAM patterning.
33. Importance sampling in Gaussian random field EUV stochastic model for quantification of stochastic variability of EUV vias.
34. EUV SRAFs printing modeling and verification in 2D hole array.
35. Compact modeling of stochastics and application in OPC.
36. Exploring alternative EUV mask absorber for iN5 self-aligned block and contact layers
37. Single mask solution to pattern BLP and SNLP using 0.33NA EUV for next-generation DRAM manufacturing.
38. Studies of a suitable mask error enhancement factor for 2D patterns
39. Studies of the source and mask optimization for 20nm node in the active layer
40. Importance sampling in Gaussian random field EUV stochastic model for quantification of stochastic variability of EUV vias
41. EUV SRAFs printing modeling and verification in 2D hole array
42. EUV based multi-patterning schemes for advanced DRAM nodes.
43. E-beam metrology-based EUVL aberration monitoring.
44. Calibration of Gaussian random field stochastic EUV models.
45. UDOF direct improvement by modulating mask absorber thickness
46. EUV based multi-patterning schemes for advanced DRAM nodes
47. Calibration of Gaussian random field stochastic EUV models
48. Better prediction on patterning failure mode with hotspot aware OPC modeling.
49. Realizing more accurate OPC models by utilizing SEM contours.
50. Better prediction on patterning failure mode with hotspot aware OPC modeling
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