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25 results on '"Wang, S.N."'

12. Comparison of HRRT and HR plus Scanners for Quantitative (R)-[C-11]verapamil, [C-11]raclopride and [C-11]flumazenil Brain Studies

Author

van Velden, F.H.P., Mansor, M.S.B., van Assema, D.M.E., van Berckel, B.N.M., Froklage, F.E., Wang, S.N., Schuit, R.C., Asselin, M.C., Lammertsma, A.A., Boellaard, R., Huisman, M.C., Neuroscience Campus Amsterdam - Brain Imaging Technology, Radiology and nuclear medicine, Neurology, and NCA - Brain imaging technology

Abstract

Purpose: This study was conducted to directly compare the high-resolution research tomograph (HRRT) (high-resolution brain) and HR+ (standard whole-body) positron emission tomography (PET) only scanners for quantitative brain studies using three tracers with vastly different tracer distributions.Procedures: Healthy volunteers underwent successive scans on HR+ and HRRT scanners (in random order) using either (R)-[11C]verapamil (n = 6), [11C]raclopride (n = 7) or [11C]flumazenil (n = 7). For all tracers, metabolite-corrected plasma-input functions were generated.Results: After resolution matching, HRRT-derived kinetic parameter values correlated well with those of HR+ for all tracers (intraclass correlation coefficients ≥0.78), having a good absolute interscanner test-retest variability (≤15 %). However, systematic differences can be seen for HRRT-derived kinetic parameter values (range −13 to +15 %).Conclusion: Quantification of kinetic parameters based on plasma-input models leads to comparable results when spatial resolution between HRRT and HR+ data is matched. When using reference-tissue models, differences remain that are likely caused by differences in attenuation and scatter corrections and/or image reconstruction.

Published
2015

25. Important research targets to be explored for β-FeSi2 device making

Author

Makita, Y., Nakayama, Y., Fukuzawa, Y., Wang, S.N., Otogawa, N., Suzuki, Y., Liu, Z.X., Osamura, M., Ootsuka, T., Mise, T., and Tanoue, H.

Subjects
*SEMICONDUCTORS, *EPITAXY, *PHOTOVOLTAIC cells, *THIN films
Abstract

To place β-FeSi2 as a 3rd generation Kankyo (Environmentally Friendly) Semiconductor after GaAs, one should demonstrate its superior features by fabricating practical devices. One has to prepare high-quality β-FeSi2 films with (1) precisely controlled Fe/Si ratio (1:2), (2) flat and cracks-free surface, (3) pinhole-free surface and interfaces, (4) flat interfaces, (5) well-controlled electron or hole concentration with residual carrier concentration as low as ∼10 16 cm-3. One should accordingly explore novel thin film manufacturing technologies by considering specific properties of constituent Fe and Si atoms. Conventional growth methods used for III–V and II–VI compound semiconductor films are not suited for β-FeSi2. Here we summarize the current status of film preparation technologies and describe their advantages and drawbacks. To explore the possibility of β-FeSi2 for low cost and high conversion efficiency solar cells, high quality β-FeSi2 films have been formed on Si substrates by molecular beam epitaxy (MBE) and sputtering methods. The critical feature about the device structure is an optimized thin β-FeSi2 template buffer layer on Si(111) substrate. The template served as a substrate for epitaxial growth of single crystal β-FeSi2 film and restrains the Fe diffusion into Si at β-FeSi2/Si interface. For n-β-FeSi2/p-Si structure under air mass 1.5, an energy conversion efficiency of 3.7% was obtained, showing that β-FeSi2 is practically a promising semiconductor for making solar cells. [Copyright &y& Elsevier]

Published
2004
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