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A conceptual design of a high-power, long-duration lunar rover powered by a laser beam is proposed. The laser transmitter in lunar orbit consists of an SP-100 nuclear reactor prime power source providing 100 kW of electricity to a laser array that emits 50 kW of laser radiation. The laser radiation is beamed to the lunar surface where it is received by a GaAlAs solid-state, laser-to-electric converter. This converter provides 22 kW of electrical power to the rover vehicle for science, locomotion, and crew needs. The mass of the laser transmitter is approximately 5000 kg, whereas the mass of the rover power supply is 520 kg. The rover power unit is significantly less massive than alternative rover power units.

A power system composed of an orbiting laser satellite and a surface-based receiver/converter is described. Power is transmitted from the satellite to the receiver/converter by laser beam. The satellite components are: (1) solar collector; (2) blackbody; (3) photovoltaic cells; (4) heat radiators; (5) laser system; and (6) transmission optics. The receiver/converter components are: receiver dish; lenticular lens; photocells; and heat radiator. Although the system can be adapted to missions at many locations in the solar system, only two are examined here: powering a lunar habitat; and powering a lunar rover. Power system components are described and their masses, dimensions, operating powers, and temperatures, are estimated using known or feasible component capabilities. The critical technologies involved are discussed and other potential missions are mentioned.

Two rover concepts were considered: an unpressurized skeleton vehicle having available 4.5 kW of electrical power and limited to a range of about 10 km from a temporary Martian base and a much larger surface exploration vehicle (SEV) operating on a maximum 75-kW power level and essentially unrestricted in range or mission. The only baseline reference system was a battery-operated skeleton vehicle with very limited mission capability and range and which would repeatedly return to its temporary base for battery recharging. It was quickly concluded that laser powering would be an uneconomical overkill for this concept. The SEV, on the other hand, is a new rover concept that is especially suited for powering by orbiting solar or electrically pumped lasers. Such vehicles are visualized as mobile habitats with full life-support systems onboard, having unlimited range over the Martian surface, and having extensive mission capability (e.g., core drilling and sampling, construction of shelters for protection from solar flares and dust storms, etc.). Laser power beaming to SEV's was shown to have the following advantages: (1) continuous energy supply by three orbiting lasers at 2000 km (no storage requirements as during Martian night with direct solar powering); (2) long-term supply without replacement; (3) very high power available (MW level possible); and (4) greatly enhanced mission enabling capability beyond anything currently conceived.

The objective was to compare a nuclear reactor-driven Sterling engine lunar base power source to a laser-to-electric converter with orbiting laser power station, each providing 1 MW of electricity to the lunar base. The comparison was made on the basis of total mass required in low-Earth-orbit for each system. This total mass includes transportation mass required to place systems in low-lunar orbit or on the lunar surface. The nuclear reactor with Sterling engines is considered the reference mission for lunar base power and is described first. The details of the laser-to-electric converter and mass are discussed. The next two solar-driven high-power laser concepts, the diode array laser or the iodine laser system, are discussed with associated masses in low-lunar-orbit. Finally, the payoff for laser-power beaming is summarized.

Photovoltaic converters are of interest for converting laser power to electrical power in a space-based laser power system. This paper describes a model for photovoltaic laser converters and the application of this model to a neodymium laser silicon photovoltaic converter system. A parametric study which defines the sensitivity of the photovoltaic parameters is described. An optimized silicon photovoltaic converter has an efficiency greater than 50 percent for 1000 W/sq cm of neodymium laser radiation.

A preliminary conceptual design of a space-based solar pumped iodide laser emitting 1 megawatt of laser power for space-to-space power transmission is described. A near parabolic solar collector focuses sunlight onto the t-C4F9I (perfluoro-t butyl iodide) lasant within a transverse flow optical cavity. Using waste heat, a thermal system was designed to supply compressor and auxiliary power. System components were designed with weight and cost estimates assigned. Although cost is very approximate, the cost comparison of individual system components leads to valuable insights for future research. In particular, it was found that laser efficiency was not a dominant cost or weight factor, the dominant factor being the laser cavity and laser transmission optics. The manufacturing cost was approx. two thirds of the total cost with transportation to orbit the remainder. The flowing nonrenewable lasant comprised 20% of the total life cycle cost of the system and thus was not a major cost factor. The station mass was 92,000 kg without lasant, requiring approx. four shuttle flights to low Earth orbit where an orbital transfer vehicle will transport it to the final altitude of 6378 km.

A preliminary conceptual design of a space-based solar-pumped iodide laser emitting 1 MW of laser power for space-to-space power transmission is described. A near-parabolic solar collector focuses sunlight onto the t-C4F9I lasant within a transverse-flow optical cavity. Using waste heat, a thermal system supplies compressor and auxiliary power. The major system components are designed with weight estimates assigned. In particular, it is found that laser efficiency is not a dominant weight factor, the dominant factor being the laser transmission optics. The station mass is 92,000 kg, requiring approximately eight Shuttle flights to LEO, where an orbital transfer vehicle can transport it to the final altitude of 6378 km.

Photovoltaic laser to electric converters are attractive for use with a space-based laser power station. This paper presents the results of modeling studies for a silicon vertical junction converter used with a Nd laser. A computer code was developed for the model and this code was used to conduct a parametric study for a Si vertical junction converter consisting of one p-n junction irradiated with a Nd laser. These calculations predict an efficiency over 50 percent for an optimized converter.

A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.

A solid on solid (SOS) Monte Carlo computer simulation employing a potential energy scaling technique was used to model the initial stages of thin film growth. The model monitors variations in the vertical interaction potential that occur due to the arrival or departure of selected adatoms or impurities at all sites in the 400 sq. ft. array. Boltzmann ordered statistics are used to simulate fluctuations in vibrational energy at each site in the array, and the resulting site energy is compared with threshold levels of possible atomic events. In addition to adsorption, desorption, and surface migration, adatom incorporation and diffusion of a substrate atom to the surface are also included. The lateral interaction of nearest, second nearest, and third nearest neighbors is also considered. A series of computer experiments are conducted to illustrate the behavior of the model.

Transmission of power in space using lasers will require devices for converting the laser power to electrical power. One such type of device for accomplishing this is the photovoltaic converter. This paper reviews photovoltaic converters and their application for conversion of monochromatic laser power to electrical power. Laser power densities greater than 1000 W/sq cm are considered. For a converter operated at 300 K a lower bandgap limit of 0.67 eV (1.80 micron) is defined. For ideal conditions, an efficiency of 47.8 percent is calculated for Nd/Liquid laser radiation incident on an Si converter. Several types of photovoltaic converters are discussed. Series resistance is identified as a major problem. Vertical multijunction converters are the most promising photovoltaic devices for use as laser to electric power converters.

A simple model for proton radiation damage in GaAs heteroface solar cells is developed. The model includes the effects of spatial nonuniformity of low energy proton damage. Agreement between the model and experimental proton damage data for GaAs heteroface solar cells is satisfactory. An extension of the model to include angular isotropy, as is appropriate for protons in space, is shown to result in significantly less cell damage than for normal proton incidence.

A simple model for particulate radiation damage in shallow-junction heteroface GaAs solar cells is used to evaluate the equivalent electron fluence concept especially in the sense of additivity of electron and proton exposure. It is found that spatial dependent factors for low-energy proton exposure results in a dose dependent equivalent fluence ratio so that additivity within the equivalent fluence concept is generally not possible.

A simple proton damage model for GaAs solar cells is derived and compared to experimental values of change in short circuit currents. The recombination cross section associated with the defects was determined from the experimental comparison to be approximately 1.2 x 10 to the -13th power sq cm in fair agreement with values determined from the deep level transient spectroscopy technique.

GaAlAs/GaAs heteroface solar cells used in space offer advantages of higher operating temperatures and recovery from radiation damage using thermal annealing. Elevated temperature experiments were conducted to evaluate the electrical stability of cells with different contact materials. These experiments indicate that for operation of GaAs heteroface solar cells at elevated temperatures, front contact metals must be carefully chosen. The short circuit current varied by only about 3% for cells with Pd/Ag contacts that were heated to 240 C for a total of 500 hours. However, a total decrease in the open circuit voltage of about 20% was observed for these cells. After heating cells to 400 C, large changes in open circuit voltage were observed for cells with Pd/Ag, Pd/Au, Pd, Ag, and Ti contacts; however, preliminary results indicate more stable open circuit voltages for cells with Au, Cr, Zn, and Cr/Au contacts.

Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.

Experimental data for the photoelectrolytic production of hydrogen using GaAs photoanodes was presented. Four types of GaAs anodes were investigated: polished GaAs, GaAs coated with gold, GaAs coated with silver, and GaAs coated with tin. The maximum measured efficiency using a tungsten light source was 8.9 percent for polished GaAs electrodes and 6.3 percent for tin coated GaAs electrodes.

Research results are reported for GaAs Schottky barrier solar cells, GaAlAs/GaAs heteroface solar cells, and GaAlAs graded band gap solar cells. Related materials studies are presented. A systems study for GaAs and Si solar concentrator systems is given.

When a system goes from a saturated state to a supersaturated one, the classical nucleation-rate formula is not instantly valid; rather, the nucleation rate relaxes exponentially (with a characteristic time - the time lag) to the value given by the steady-state formula. Under some circumstances, particularly those found in some cool stellar atmospheres, the time lag can be quite long and a decisve factor in determining the possibility of particle formation. Carbon condensation in the atmospheres of Mira variables is considered and found to be unlikely on the basis of classical nucleation theory because of the long time lags involved, unless the parameters describing the physical conditions in these atmospheres are significantly different from current estimates.

The high surface recombination velocity is the major deterrent to obtaining efficient GaAs solar cells. If, however, an electric field is built in at the surface, the carriers will be swept away from the surface thus minimizing the surface recombination velocity problem. It has been previously shown theoretically that an exponential impurity distribution in the doped region of the cell results in a built-in electric field. Ion implantation was used to produce solar cells with an exponential impurity profile and cells with uniform profiles. It is shown that cells with an exponential impurity profile have higher open-circuit voltage, fill factors, and spectral response than those with a uniform impurity profile.

Two processes were considered: the infinite melt process and the finite melt process. The only technique that is developed to the point that 10,000 cells could be produced in one year is the infinite melt liquid phase epitaxy process. The lowest cost per cell was achieved with the advanced metal organic chemical vapor deposition process. Molecular beam epitaxy was limited by the slow growth rate. The lowest cost, an 18 percent efficient cell at air mass zero, was approximately $70 per watt.

GaAs solar cells offer substantial advantages for space photovoltaic power over Si solar cells in the areas of efficiency, elevated temperature operation, and radiation damage stability. A mission cost comparison is made for GaAs and Si solar cells. For Si cell arrays, the total mission cost is found to be a minimum for a solar concentration of 2.9. For GaAs, modes of operation and construction are investigated. Modes having lower mission costs than the minimum Si mission cost are defined. These include higher concentrations, lightweight cells, and simultaneous power generation and annealing. The technological progress necessary for GaAs to operate in these modes is identified.

The properties of p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells were determined in the temperature range from 25 C to 350 C. Illumination air mass zero (AM0) current-voltage measurements show that the short circuit current increases as a function of temperature up to 210 C and then decreases up to 350 C. The open circuit voltage and fill factor decrease linearly with increasing temperature. The spectral response shifts toward higher wavelengths with increasing temperature.

In this report, concepts and equations are developed to describe the simultaneous radiation damage and annealing of solar cells. The annealing characteristics of three types of defects are employed to study three examples of continuous irradiation and annealing. One example shows that the effective damage could be reduced by a factor of fifty. The difficulty of a laboratory experiment properly simulating the effects in space are discussed. Potential advantages of continuous annealing such as reduction of stable defect formation and omission of radiation cover glasses are presented.

Annealing of electron-irradiation damage in GaAs solar cells is important for space applications. This paper describes studies conducted to understand this annealing process. GaAs heteroface solar cells were irradiated with 10 to the 15th 1-MeV electrons/sq cm followed by thermal annealing. An activation energy for annealing of 1.25 + or - 0.14 eV and a frequency factor of (3.7 + or - 1.9) x 10 to the 9th per sec were determined. A small component of the irradiation damage which does not anneal measurably at 200 C was observed.

Recent results of electron and proton irradiation and annealing of GaAs solar cells are presented along with some implications of these results. A comparison between the energy-levels produced by protons and by electrons which are not stopped in the material indicate that the damage produced by protons and electrons may be qualitatively different. Thus, annealing of proton damage may be very different from the annealing of electron damage.

Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.

Measurements of thermal annealing of GaAlAs/GaAs solar cells damaged by 1 MeV electron irradiation are reported, and the magnitude of the short-circuit current recovery is discussed. The damaged cells are annealed in a vacuum at 200 C. A cell irradiated at 10 to the 13th power electrons per sq cm recovers all its lost short-circuit current after 15 hours of annealing. Possible application of the annealing process to solar cells in space is also considered.

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

The present status of the GaAlAs/GaAs heteroface solar cell program is reported. Studies have been concentrated on GaAlAs/GaAs heteroface solar cells; however, some research has been conducted on thin junction, diffused GaAs solar cells. Emphasis has been on obtaining high efficiency (18% to 20%) GaAs solar cells. Two problems that have limited the efficiency of GaAs solar cells are the high recombination velocity of carriers near the surface and the low minority carrier diffusion length in n-GaAs.

The efficiency for conversion of electromagnetic energy to chemical and electrical energy utilizing semiconductor single crystals as photoanodes in electrochemical cells was investigated. Efficiencies as high as 20 percent were achieved for the conversion of 330 nm radiation to chemical energy in the form of hydrogen by the photoelectrolysis of water in a SrTiO3 based cell. The SrTiO3 photoanodes were shown to be stable in 9.5 M NaOH solutions for periods up to 48 hours. Efficiencies of 9 percent were measured for the conversion of broadband visible radiation to hydrogen using n-type GaAs crystals as photoanodes. Crystals of GaAs coated with 500 nm of gold, silver, or tin for surface passivation show no significant change in efficiency. By suppressing the production of hydrogen in a CdSe-based photogalvanic cell, an efficiency of 9 percent was obtained in conversion of 633 nm light to electrical energy. A CdS-based photogalvanic cell produced a conversion efficiency of 5 percent for 500 nm radiation.