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High temperature properties of GaAlAs/GaAs heteroface solar cells
- Publication Year :
- 1980
- Publisher :
- United States: NASA Center for Aerospace Information (CASI), 1980.
-
Abstract
- The properties of p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells were determined in the temperature range from 25 C to 350 C. Illumination air mass zero (AM0) current-voltage measurements show that the short circuit current increases as a function of temperature up to 210 C and then decreases up to 350 C. The open circuit voltage and fill factor decrease linearly with increasing temperature. The spectral response shifts toward higher wavelengths with increasing temperature.
- Subjects :
- Energy Production And Conversion
Subjects
Details
- Language :
- English
- Database :
- NASA Technical Reports
- Publication Type :
- Report
- Accession number :
- edsnas.19810042838
- Document Type :
- Report