214 results on '"Vrancken, C."'
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2. Body Image and Sexuality in Urinary Incontinence
3. Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
4. Thermal stability of NiPt- and Pt-silicide contacts on SiGe source/drain
5. Independent double-gate FinFETs with asymmetric gate stacks
6. Modulation of the effective work function of fully-silicided (FUSI) gate stacks
7. Study of silicide contacts to SiGe source/drain
8. Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gates
9. Low temperature spike anneal for Ni-silicide formation
10. RELATIONSHIP OF %HRMAX AND %VO2MAX IN NORMAL WEIGHT, OVERWEIGHT, AND OBESE YOUTH
11. THE EFFECT OF OBESITY STATUS ON VO2 MAX IN YOUTH AND ADULTS
12. High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG
13. Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide
14. First Demonstration of Vertically Stacked Gate-All-Around Highly Strained Germanium Nanowire pFETs
15. First demonstration of vertically-stacked Gate-All-Around highly-strained Germanium nanowire p-FETs
16. Replacement Metal Contact Using Sacrificial ILD0 for Wrap Around Contact in Scaled FinFET Technology
17. The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicon structures.
18. Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition
19. Critical review of real-time methods for solid waste characterisation: Informing material recovery and fuel production
20. The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicone structures
21. Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect
22. First demonstration of 15nm-WFIN inversion-mode relaxed-Germanium n-FinFETs with Si-cap free RMG and NiSiGe Source/Drain
23. Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay
24. Performance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si Fins
25. 15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
26. Analysis of dopant diffusion and defects in Fin structure using an atomistic kinetic Monte Carlo approach
27. Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process
28. Occurrence and distribution of the mycotoxin-producing Fusarium species isolated from winter wheat in Luxemburg in 2007 and 2008
29. Fusarioses sur blé d’hiver au Grand-Duché de Luxembourg. Premiers résultats d’une enquête commencée en 2007 sur l’identification des agents de la fusariose.
30. [Physiopathological significance of the overexpression of ApN muscle in the event of stress]
31. First Report of Fusarium Head Blight on Winter Wheat in the Grand Duchy of Luxembourg
32. Kinetic Monte Carlo simulations for dopant diffusion and defects in Si and SiGe: Analysis of dopants in SiGe-channel Quantum Well
33. Analysis of dopant diffusion and defects in SiGe-channel Implant Free Quantum Well (IFQW) devices using an atomistic kinetic Monte Carlo approach
34. Understanding of Trap-Assisted Tunneling Current - Assisted by Oxygen Vacancies in RuOx/SrTiO3/TiN MIM Capacitor for the DRAM Application
35. Hybrid Floating Gate Cell for Sub-20-nm NAND Flash Memory Technology
36. Analysis of dopant diffusion and defects in SiGe channel Quantum Well for Laser annealed device using an atomistic kinetic Monte Carlo approach
37. Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory
38. (Invited) Plasma Enhanced Atomic Layer Deposited Ruthenium for MIMCAP Applications
39. Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors
40. Advanced Capacitor Dielectrics: Towards 2x nm DRAM
41. Novel Bi-Layer Poly-Silicon Channel Vertical Flash Cell for Ultrahigh Density 3D SONOS NAND Technology
42. Response of a single trap to AC negative Bias Temperature stress
43. Analysis of pocket profile deactivation and its impact on Vth variation for Laser annealed device using an atomistic kinetic Monte Carlo approach
44. Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes
45. Laser annealed junctions: Pocket profile analysis using an atomistic kinetic Monte Carlo approach
46. High yield sub-0.1µm2 6T-SRAM cells, featuring high-k/metal-gate finfet devices, double gate patterning, a novel fin etch strategy, full-field EUV lithography and optimized junction design & layout
47. Impact of cutting frequency on the vigour of Rumex obtusifolius
48. Migrating from planar to FinFET for further CMOS scaling: SOI or bulk?
49. First Report of Wheat Leaf Rust in the Grand Duchy of Luxembourg and the Progress of its Appearance over the 2003–2008 Period
50. Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications
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