Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay

We discuss several advancements over our previous report [1]: - Introduction of conventional stress boosters resulting in 16% and 11% for nMOS and pMOS respectively. For the first time the compatibility of SMT (Stress memorization technique) with High-κ/Metal Gate is demonstrated. In addition, we developed a blanket SMT process that does not require a photo to protect the pMOS by selecting a hydrogen-rich SiN film. - A comprehensive study of HfSiO and HfO2 as function of La/Al doping and spike/laser annealing. Parameters studied include Vt tuning, reliability and process control. - Demonstration of fast invertor delay of 10ps including high frequency response analysis revealing the negative impact of high metal sheet resistance and parasitic metal-poly interface oxide.