Search

Your search keyword '"Voss, Paul L."' showing total 230 results
Start Over Author "Voss, Paul L."
230 results on '"Voss, Paul L."'

1. Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: a simulation study

Author

Tijent, Fatima Z., Faqir, Mustapha, Voss, Paul L., Salvestrini, Jean-Paul, and Ougazzaden, Abdallah

Subjects
Physics - Computational Physics, Physics - Applied Physics
Abstract

In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a passivation layer and as a release layer to transfer GaN HEMT to diamond substrate. The obtained devices exhibit improved thermal performance compared to SiO2/GaN/sapphire HEMT. The lattice temperature was reduced from 507 K in SiO2/GaN/sapphire to 372 K in h-BN/GaN/diamond HEMT. The temperature decrease enhances the drain current and transconductance to 900 mA/mm and 250 mS/mm, corresponding to a 47 % improvement. In addition, the total thermal resistance Rth is reduced by a factor of 5 from 27 K.mm/W in GaN/sapphire HEMT to 5.5 K.mm/W in GaN/diamond HEMT. This study indicates that h-BN integration in GaN HEMT as a top heat spreader and a release layer for transfer to diamond substrate can be a promising solution to reduce self-heating effects and extend the device lifetime and reliability., Comment: 19 pages, 9 figures

Published
2024
Full Text
View/download PDF

3. Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics

Author

Puybaret, Renaud, Patriarche, Gilles, Jordan, Matthew B., Sundaram, Suresh, Gmili, Youssef El, Salvestrini, Jean-Paul, Voss, Paul L., de Heer, Walt A., Berger, Claire, and Ougazzaden, Abdallah

Subjects
Condensed Matter - Materials Science
Abstract

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective crystals in the heteroepitaxial growth of nitrides, and the high mobility graphene film can readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. The process consists in first growing a 5-8 graphene layers film on the C-face of 4H- SiC by confinement-controlled sublimation of silicon carbide. The graphene film is then patterned and arrays of 75-nanometer-wide openings are etched in graphene revealing the SiC substrate. 30-nanometer-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in openings patterned through graphene, with no nucleation on graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal hexagonal wurtzite. The GaN crystalline nanomesas have no threading dislocations, and do not show any V-pit. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene / silicon carbide platform., Comment: 7 pages, 5 figures

Published
2015

4. Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

Author

Puybaret, Renaud, Hankinson, John, Palmer, James, Bouvier, Clement, Ougazzaden, Abdallah, Voss, Paul L, Berger, Claire, and de Heer, Walt A

Subjects
Condensed Matter - Materials Science
Abstract

Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbide by the deposition of a 120 nm to 150nm-thick silicon nitride (SiN) mask prior to graphitization. In this process we find that areas covered by a Si-rich SiN mask have one to four more layers than non-masked areas. Conversely N-rich SiN decreases the thickness by three layers. In both cases the mask decomposes before graphitization is completed. Graphene grown in masked areas show good quality as observed by Raman spectroscopy, atomic force microscopy (AFM) and transport data. By tailoring the growth parameters selective graphene growth and sub-micron patterns have been obtained.

Published
2013

7. A quantum-dynamical theory for nonlinear optical interactions in graphene

Author

Zhang, Zheshen and Voss, Paul L.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics
Abstract

We use a quantum-dynamical model to investigate the optical response of graphene under low excitation power. Ultrafast carrier relaxation processes, which play an important role for understanding the optical response of graphene, are included phenomenologically into the model. We obtain analytical solutions for the linear and third-order nonlinear optical response of graphene, and four-wave mixing in particular. This theory shows agreement with recently reported experimental data on linear complex optical conductivity and four-wave mixing, providing evidence for ultrafast quantum-dephasing times of approximately 1 fs.

Published
2011

8. A 24 km fiber-based discretely signaled continuous variable quantum key distribution system

Author

Xuan, Quyen Dinh, Zhang, Zheshen, and Voss, Paul L.

Subjects
Quantum Physics
Abstract

We report a continuous variable key distribution system that achieves a final secure key rate of 3.45 kb/sec over a distance of 24.2 km of optical fiber. The protocol uses discrete signaling and post-selection to improve reconciliation speed and quantifies security by means of quantum state tomography. Polarization multiplexing and a frequency translation scheme permit transmission of a continuous wave local oscillator and suppression of noise from guided acoustic wave Brillouin scattering by more than 27 dB.

Published
2009

10. An integrable optical-fiber source of polarization entangled photon-pairs in the telecom band

Author

Li, Xiaoying, Liang, Chuang, Lee, Kim Fook, Chen, Jun, Voss, Paul L., and Kumar, Prem

Subjects
Quantum Physics
Abstract

We demonstrate an optical-fiber based source of polarization entangled photon-pairs with improved quality and efficiency, which has been integrated with off-the-shelf telecom components and is, therefore, well suited for quantum communication applications in the 1550 nm telecom band. Polarization entanglement is produced by simultaneously pumping a loop of standard dispersion-shifted fiber with two orthogonally-polarized pump pulses, one propagating in the clockwise and the other in the counter-clockwise direction. We characterize this source by investigating two-photon interference between the generated signal-idler photon-pairs under various conditions. The experimental parameters are carefully optimized to maximize the generated photon-pair correlation and to minimize contamination of the entangled photon-pairs from extraneously scattered background photons that are produced by the pump pulses for two reasons: i) spontaneous Raman scattering causes uncorrelated photons to be emitted in the signal/idler bands and ii) broadening of the pump-pulse spectrum due to self-phase modulation causes pump photons to leak into the signal/idler bands. We obtain two-photon interference with visibility $>90$% without subtracting counts caused by the background photons (only dark counts of the detectors are subtracted), when the mean photon number in the signal (idler) channel is about 0.02/pulse, while no interference is observed in direct detection of either the signal or the idler photons., Comment: 4 figures, submitted to Phys. Rev. A

Published
2006
Full Text
View/download PDF

11. Raman-noise induced quantum limits for chi^3 nondegenerate phase-sensitive amplification and quadrature squeezing

Author

Voss, Paul L., Köprülü, Kahraman G., and Kumar, Prem

Subjects
Quantum Physics
Abstract

We present a quantum theory of nondegenerate phase-sensitive parametric amplification in a chi^3 nonlinear medium. The non-zero response time of the Kerr chi^3 nonlinearity determines the quantum-limited noise figure of chi^3 parametric amplification, as well as the limit on quadrature squeezing. This non-zero response time of the nonlinearity requires coupling of the parametric process to a molecular-vibration phonon bath, causing the addition of excess noise through spontaneous Raman scattering. We present analytical expressions for the quantum-limited noise figure of frequency non-degenerate and frequency degenerate chi^3 parametric amplifiers operated as phase-sensitive amplifiers. We also present results for frequency non-degenerate quadrature squeezing. We show that our non-degenerate squeezing theory agrees with the degenerate squeezing theory of Boivin and Shapiro as degeneracy is approached. We have also included the effect of linear loss on the phase-sensitive process., Comment: Now final submitted version. Added references, added some content, edited language

Published
2004

12. Optical-fiber source of polarization-entangled photon pairs in the 1550nm telecom band

Author

Li, Xiaoying, Voss, Paul L., Sharping, Jay E., and Kumar, Prem

Subjects
Quantum Physics
Abstract

We present a fiber based source of polarization-entangled photon pairs that is well suited for quantum communication applications in the 1550nm band of standard fiber-optic telecommunications. Polarization entanglement is created by pumping a nonlinear-fiber Sagnac interferometer with two time-delayed orthogonally-polarized pump pulses and subsequently removing the time distinguishability by passing the parametrically scattered signal-idler photon pairs through a piece of birefringent fiber. Coincidence detection of the signal-idler photons yields biphoton interference with visibility greater than 90%, while no interference is observed in direct detection of either the signal or the idler photons. All four Bell states can be prepared with our setup and we demonstrate violations of CHSH form of Bell's inequalities by up to 10 standard deviations of measurement uncertainty., Comment: 12 pages, 4 figures, to be submitted to Phys. Rev. Lett. See also paper QTuB4 in QELS'03 Technical Digest (OSA, Washington, D.C., 2003). This is a more complete version

Published
2004
Full Text
View/download PDF

16. Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template

Author

Gujrati, Rajat, primary, Srivastava, Ashutosh, additional, Vuong, Phuong, additional, Ottapilakkal, Vishnu, additional, Sama, Yves N., additional, Ngo, Thi Huong, additional, Moudakir, Tarik, additional, Patriarche, Gilles, additional, Gautier, Simon, additional, Voss, Paul L., additional, Sundaram, Suresh, additional, Salvestrini, Jean Paul, additional, and Ougazzaden, Abdallah, additional

Published
2023
Full Text
View/download PDF

19. Biosensors for the Rapid Detection of Cardiovascular Biomarkers of Vital Interest: Needs, Analysis and Perspectives

Author

Abensur Vuillaume, Laure, primary, Frija-Masson, Justine, additional, Hadjiat, Meriem, additional, Riquier, Thomas, additional, d’Ortho, Marie-Pia, additional, Le Borgne, Pierrick, additional, Goetz, Christophe, additional, Voss, Paul L., additional, Ougazzaden, Abdallah, additional, Salvestrini, Jean-Paul, additional, and Leïchlé, Thierry, additional

Published
2022
Full Text
View/download PDF

21. Influence of Sapphire Substrate Orientation on the van der Waals Epitaxy of III-Nitrides on 2D Hexagonal Boron Nitride: Implication for Optoelectronic Devices

Author

Vuong, Phuong, primary, Sundaram, Suresh, additional, Ottapilakkal, Vishnu, additional, Patriarche, Gilles, additional, Largeau, Ludovic, additional, Srivastava, Ashutosh, additional, Mballo, Adama, additional, Moudakir, Tarik, additional, Gautier, Simon, additional, Voss, Paul L., additional, Salvestrini, Jean-Paul, additional, and Ougazzaden, Abdallah, additional

Published
2022
Full Text
View/download PDF

22. Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors

Author

Mballo, Adama, primary, Ahaitouf, Ali, additional, Sundaram, Suresh, additional, Srivastava, Ashutosh, additional, Ottapilakkal, Vishnu, additional, Gujrati, Rajat, additional, Vuong, Phuong, additional, Karrakchou, Soufiane, additional, Kumar, Mritunjay, additional, Li, Xiaohang, additional, Halfaya, Yacine, additional, Gautier, Simon, additional, Voss, Paul L., additional, Salvestrini, Jean Paul, additional, and Ougazzaden, Abdallah, additional

Published
2021
Full Text
View/download PDF

24. Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

Author

Karrakchou, Soufiane, primary, Sundaram, Suresh, additional, Gujrati, Rajat, additional, Vuong, Phuong, additional, Mballo, Adama, additional, Adjmi, Hibat E., additional, Ottapilakkal, Vishnu, additional, El Huni, Walid, additional, Bouzid, Karim, additional, Patriarche, Gilles, additional, Ahaitouf, Ali, additional, Voss, Paul L., additional, Salvestrini, Jean Paul, additional, and Ougazzaden, Abdallah, additional

Published
2021
Full Text
View/download PDF

27. Side-by-side comparison of pre- and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates

Author

Karrakchou, Soufiane, primary, Sundaram, Suresh, additional, Ayari, Taha, additional, Mballo, Adama, additional, Vuong, Phuong, additional, Srivastava, Ashutosh, additional, Gujrati, Rajat, additional, Ahaitouf, Ali, additional, Voss, Paul L., additional, Salvestrini, Jean-Paul, additional, and Ougazzaden, Abdallah, additional

Published
2021
Full Text
View/download PDF

28. Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

Author

Mballo, Adama, primary, Srivastava, Ashutosh, additional, Sundaram, Suresh, additional, Vuong, Phuong, additional, Karrakchou, Soufiane, additional, Halfaya, Yacine, additional, Gautier, Simon, additional, Voss, Paul L., additional, Ahaitouf, Ali, additional, Salvestrini, Jean Paul, additional, and Ougazzaden, Abdallah, additional

Published
2021
Full Text
View/download PDF

29. Detection sensor comprising a selective high-electron-mobility transistor for detecting a gaseous or liquid component

Author

Bishop, Chris, Aubry, Vincent, Ougazzaden, Abdallah, Salvestrini, Jean-Paul, Voss, Paul L., Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), and DASTILLUNG, NADEGE

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics]
Published
2020

30. Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN

Author

Vuong, Phuong, Sundaram, Suresh, Mballo, Adama, Patriarche, Gilles, Leone, Stefano, Benkhelifa, Fouad, Karrakchou, Soufiane, Moudakir, Tarik, Gautier, Simon, Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, A., and Publica

Subjects
2D boron nitride, mechanical transfer, flexible (opto) electronics, transferrable nanodevices, semiconductors, III-nitrides
Abstract

Hexagonal boron nitride (h-BN) can be used as a p-doped material in wide-bandgap optoelectronic heterostructures or as a release layer to allow lift-off of grown three-dimensional (3D) GaN-based devices. To date, there have been no studies of factors that lead to or prevent lift-off and/or spontaneous delamination of layers. Here, we report a unique approach of controlling the adhesion of this layered material, which can result in both desired lift-off layered h-BN and mechanically inseparable robust h-BN layers. This is accomplished by controlling the diffusion of Al atoms into h-BN from AlN buffers grown on h-BN/sapphire. We present evidence of Al diffusion into h-BN for AlN buffers grown at high temperatures compared to conventional-temperature AlN buffers. Further evidence that the Al content in BN controls lift-off is provided by comparison of two alloys, Al0.03B0.97N/ sapphire and Al0.17B0.83N/ sapphire.More over, we tested that management of Al diffusion controls the mechanical adhesion of high-electron-mobility transistor(HEMT) devices grown on AlN/h-BN/sapphire. The results extend the control of two-dimensional (2D)/3D hetero-epitaxy and bring h-BN closer to industrial application in optoelectronics.

Published
2020

31. Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

Author

Vuong, Phuong, primary, Sundaram, Suresh, additional, Mballo, Adama, additional, Patriarche, Gilles, additional, Leone, Stefano, additional, Benkhelifa, Fouad, additional, Karrakchou, Soufiane, additional, Moudakir, Tarik, additional, Gautier, Simon, additional, Voss, Paul L., additional, Salvestrini, Jean-Paul, additional, and Ougazzaden, Abdallah, additional

Published
2020
Full Text
View/download PDF

34. A Highly Porous and Conductive Composite Gate Electrode for NO, NO2, O2, H2 and NH3 Exhaust Gas Sensors

Author

Chahdi, Hassane Ouazzani, primary, Helli, Omar, additional, Bourzgui, Nour-Eddine, additional, Breuil, Léo, additional, Danovitch, David, additional, Voss, Paul L., additional, Sundaram, Suresh, additional, Aubry, Vincent, additional, Halfaya, Yacine, additional, Ougazzaden, Abdallah, additional, Salvestrini, Jean-Paul, additional, Maher, Hassan, additional, and Soltani, Ali, additional

Published
2020
Full Text
View/download PDF

35. Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature

Author

Chahdi, Hassane Ouazzani, primary, Ougazzaden, Abdallah, additional, Salvestrini, Jean-Paul, additional, Maher, Hassan, additional, Soltani, Ali, additional, Helli, Omar, additional, Bourzgui, Nour-Eddine, additional, Breuil, Leo, additional, Danovitch, David, additional, Voss, Paul L., additional, Sundaram, Suresh, additional, Aubry, Vincent, additional, and Halfaya, Yacine, additional

Published
2019
Full Text
View/download PDF

36. Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)

Author

Ayari, Taha, primary, Sundaram, Suresh, additional, Bishop, Chris, additional, Mballo, Adama, additional, Vuong, Phuong, additional, Halfaya, Yacine, additional, Karrakchou, Soufiane, additional, Gautier, Simon, additional, Voss, Paul L., additional, Salvestrini, Jean Paul, additional, and Ougazzaden, Abdallah, additional

Published
2019
Full Text
View/download PDF

37. Model of Ni-63 battery with realistic PIN structure.

Author

Munson IV, Charles E., Arif, Muhammad, Streque, Jeremy, Belahsene, Sofiane, Martinez, Anthony, Ramdane, Abderrahim, El Gmili, Youssef, Salvestrini, Jean-Paul, Voss, Paul L., and Ougazzaden, Abdallah

Subjects
ELECTRON-hole droplets, ELECTRIC batteries, ENERGY development, SCANNING electron microscopes, RADIOACTIVE substances
Abstract

GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-n structure under scanning electron microscope illumination. [ABSTRACT FROM AUTHOR]

Published
2015
Full Text
View/download PDF

38. Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019)

Author

Sundaram, Suresh, primary, Li, Xin, additional, Halfaya, Yacine, additional, Ayari, Taha, additional, Patriarche, Gilles, additional, Bishop, Christopher, additional, Alam, Saiful, additional, Gautier, Simon, additional, Voss, Paul L., additional, Salvestrini, Jean Paul, additional, and Ougazzaden, Abdallah, additional

Published
2019
Full Text
View/download PDF

40. Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications

Author

Ayari, Taha, primary, Sundaram, Suresh, additional, Bishop, Chris, additional, Mballo, Adama, additional, Vuong, Phuong, additional, Halfaya, Yacine, additional, Karrakchou, Soufiane, additional, Gautier, Simon, additional, Voss, Paul L., additional, Salvestrini, Jean Paul, additional, and Ougazzaden, Abdallah, additional

Published
2019
Full Text
View/download PDF

41. Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance

Author

Ayari, Taha, primary, Sundaram, Suresh, additional, Li, Xin, additional, Alam, Saiful, additional, Bishop, Chris, additional, El Huni, Walid, additional, Jordan, Matthew B., additional, Halfaya, Yacine, additional, Gautier, Simon, additional, Voss, Paul L., additional, Salvestrini, Jean Paul, additional, and Ougazzaden, Abdallah, additional

Published
2018
Full Text
View/download PDF

42. Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

Author

Ayari, Taha, primary, Bishop, Chris, additional, Jordan, Matthew B., additional, Sundaram, Suresh, additional, Li, Xin, additional, Alam, Saiful, additional, ElGmili, Youssef, additional, Patriarche, Gilles, additional, Voss, Paul L., additional, Salvestrini, Jean Paul, additional, and Ougazzaden, Abdallah, additional

Published
2017
Full Text
View/download PDF

43. Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust

Author

Halfaya, Yacine, Bishop, Chris, Soltani, A., Suresh, Sundaram, Aubry, Vincent, Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), IMPACT N4S, and ANR-15-IDEX-0004,LUE,Isite LUE(2015)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

44. Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

Author

Puybaret, Renaud, primary, Rogers, David J, additional, Gmili, Youssef El, additional, Sundaram, Suresh, additional, Jordan, Matthew B, additional, Li, Xin, additional, Patriarche, Gilles, additional, Teherani, Ferechteh H, additional, Sandana, Eric V, additional, Bove, Philippe, additional, Voss, Paul L, additional, McClintock, Ryan, additional, Razeghi, Manijeh, additional, Ferguson, Ian, additional, Salvestrini, Jean-Paul, additional, and Ougazzaden, Abdallah, additional

Published
2017
Full Text
View/download PDF

48. Nanometer scale characterizations of InGaN nanostructures grown on GaN template

Author

El Gmili, Youssef, Sundaram, Suresh, Puybaret, Renaud, Li, Xin, Bonanno, Peter, Pradalier, Cedric, Voss, Paul L, Salvestrini, Jean-Paul, Ougazzaden, Abdallah, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Informatique de Grenoble (LIG), Université Pierre Mendès France - Grenoble 2 (UPMF)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Autonomous Systems Laboratory (BIOMEDIA), Commonwealth Scientific and Industrial Research Organisation [Canberra] (CSIRO), CSIRO Information and Commuciation Technologies (CSIRO ICT Centre), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), and CentraleSupélec-Université de Lorraine (UL)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2015

49. Nanoselective area growth of high quality thick InGaN/GaN on sacrificial ZnO templates

Author

Puybaret, Renaud, Sundaram, Suresh, Li, Xin, El Gmili, Youssef, Pantzas, Konstantinos, Troadec, David, Patriarche, Gilles, Rogers, David, Teherani, Ferechteh Hosseini, Sandana, Eric Vinod, Bove, Philippe, Voss, Paul L, Salvestrini, Jean-Paul, Ougazzaden, Abdallah, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nanovation SARL, Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), ANR-12-PRGE-0014,NOVAGAINS,Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium(2012), Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Georgia Institute of Technology [Lorraine, France]-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Ecole Nationale Supérieure des Arts et Metiers Metz-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Salvestrini, Jean Paul, Production renouvelable et gestion de l’électricité - Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium - - NOVAGAINS2012 - ANR-12-PRGE-0014 - PROGELEC - VALID, Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2015

50. MOVPE growth of InGaN alloys with high In content on ZnO template substrates

Author

Sundaram, Suresh, Puybaret, Renaud, Rogers, Dave J., Teherani, Ferechteh Hosseini, Sandana, Eric Vinod, Bove, Philippe, El Gmili, Youssef, Troadec, David, Patriarche, Gilles, Voss, Paul L, Salvestrini, Jean-Paul, Ougazzaden, Abdallah, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Nanovation SARL, Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), ANR-12-PRGE-0014,NOVAGAINS,Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium(2012), Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), Salvestrini, Jean Paul, and Production renouvelable et gestion de l’électricité - Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium - - NOVAGAINS2012 - ANR-12-PRGE-0014 - PROGELEC - VALID

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2015

Catalog

Books, media, physical & digital resources
See catalog results