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2. Ferroelectric C-Axis Textured Aluminum Scandium Nitride Thin Films of 100 nm Thickness

Author

Dixiong Wang, Myung-Geun Han, Roy H. Olsson, Martin Kratzer, Zichen Tang, Bernd Heinz, Volker Roebisch, Eric A. Stach, Paria S. M. Gharavi, Xiwen Liu, Michael D'Agati, Kim Kisslinger, Jeffrey Zheng, and Deep Jariwala

Subjects
010302 applied physics, Thin layers, Materials science, Nucleation, chemistry.chemical_element, Crystal growth, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Ferroelectricity, chemistry, Aluminium, 0103 physical sciences, Surface roughness, Scandium, Thin film, Composite material, 0210 nano-technology
Abstract

We report on the properties of Aluminum Scandium Nitride (AlScN) thin films deposited by pulsed-DC co-sputtering. We present the impact of the nitrogen-to-argon gas ratio on the crystal growth orientation, film stress, surface roughness, scandium concentration, and deposition rate of 760-860 nm thick AlScN thin films on Ti/Pt (111). We utilize the optimized process conditions from this study to deposit thin layers of AlScN and to explore the nucleation and orientation of thin AlScN layers on Ti/Pt (111). We report on the ferroelectric properties of 100 nm thick AlScN materials.

Published
2020

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