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186 results on '"Vilquin, Bertrand"'

1. Comparative Performance of Fluorite-Structured Materials for Nanosupercapacitor Applications

Author

Magagnin, Grégoire, Bouaziz, Jordan, Berre, Martine Le, Gonzalez, Sara, Deleruyelle, Damien, and Vilquin, Bertrand

Subjects
Physics - Applied Physics, Condensed Matter - Materials Science
Abstract

Over the last fifteen years, ferroelectric and antiferroelectric ultra thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density. Antiferroelectric $ZrO_2$, in particular, holds significant promise for nanosupercapacitors, owing to its potential for high energy storage density (ESD) and high efficiency ($\eta$). This work assesses the potential of high-performance $Hf_{1-x}Zr_{x}O_2$ thin films encapsulated by TiN electrodes that show linear dielectric (LD), ferroelectric (FE), and antiferroelectric (AFE) behavior. Oxides on silicon are grown by magnetron sputtering and plasma-enhanced atomic layer deposition. ESD and $\eta$ are compared for FE, AFE, and LD samples at the same electrical field (3.5 MV/cm). As expected, ESD is higher for the FE sample ($95 J/cm^3$), but $\eta$ is ridiculously small ($\approx$ 55%), because of the opening of the FE hysteresis curve inducing high loss. Conversely, LD samples exhibit the highest efficiency (nearly 100%), at the expense of a lower ESD. AFE $ZrO_2$ thin film strikes a balance between FE and LD behavior, showing reduced losses compared to the FE sample but an ESD as high as $52 J/cm^3$ at 3.5 MV/cm. This value can be further increased up to $84 J/cm^3$ at a higher electrical field (4.0 MV/cm), with an $\eta$ of 75%, among the highest values reported for fluorite-structured materials, offering promising perspectives for future optimization.

Published
2024

2. Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Author

Silva, José PB, Alcala, Ruben, Avci, Uygar E, Barrett, Nick, Bégon-Lours, Laura, Borg, Mattias, Byun, Seungyong, Chang, Sou-Chi, Cheong, Sang-Wook, Choe, Duk-Hyun, Coignus, Jean, Deshpande, Veeresh, Dimoulas, Athanasios, Dubourdieu, Catherine, Fina, Ignasi, Funakubo, Hiroshi, Grenouillet, Laurent, Gruverman, Alexei, Heo, Jinseong, Hoffmann, Michael, Hsain, H Alex, Huang, Fei-Ting, Hwang, Cheol Seong, Íñiguez, Jorge, Jones, Jacob L, Karpov, Ilya V, Kersch, Alfred, Kwon, Taegyu, Lancaster, Suzanne, Lederer, Maximilian, Lee, Younghwan, Lomenzo, Patrick D, Martin, Lane W, Martin, Simon, Migita, Shinji, Mikolajick, Thomas, Noheda, Beatriz, Park, Min Hyuk, Rabe, Karin M, Salahuddin, Sayeef, Sánchez, Florencio, Seidel, Konrad, Shimizu, Takao, Shiraishi, Takahisa, Slesazeck, Stefan, Toriumi, Akira, Uchida, Hiroshi, Vilquin, Bertrand, Xu, Xianghan, Ye, Kun Hee, and Schroeder, Uwe

Subjects
Engineering, Materials Engineering, Electrical and Electronic Engineering, Mechanical Engineering, Materials engineering, Nanotechnology, Condensed matter physics
Abstract

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

Published
2023

3. Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

Author

Sun, Yanxiao, Niu, Gang, Ren, Wei, Zhao, Jinyan, Wang, Yankun, Wu, Heping, Jiang, Luyue, Dai, Liyan, Xie, Ya-Hong, Romeo, Pedro Rojo, Bouaziz, Jordan, and Vilquin, Bertrand

Subjects
Engineering, Physical Sciences, Materials Engineering, Nanotechnology, Condensed Matter Physics, Optical Physics, Quantum Physics, Electrical and Electronic Engineering, Physical sciences
Abstract

Field effect transistors (FETs) using two-dimensional molybdenum disulfide (MoS2) as the channel material has been considered one of the most potential candidates for future complementary metal-oxide-semiconductor technology with low power consumption. However, the understanding of the correlation between the device performance and material properties, particularly for devices with scaling-down channel lengths, is still insufficient. We report in this paper back-gate FETs with chemical-vapor-deposition grown and transferred MoS2 and Zr doped HfO2 ((Hf,Zr)O2, HZO) high-k dielectric gates with channel lengths ranging from 10 to 30 µm with a step of 5 µm. It has been demonstrated that channels with the length to width ratio of 0.2 lead to the most superior performance of the FETs. The MoS2/HZO hybrid FETs show a stable threshold voltage of ∼1.5 V, current on/off ratio of >104, and field effect mobility in excess of 0.38 cm2 V−1 s−1. The impact of the channel lengths on FET performance is analyzed and discussed in depth. A hysteresis loop has been observed in the Ids − Vgs characteristics of the hybrid FETs, which has been further studied and attributed to the charge effect at the interfaces. The HZO films show a relatively weak ferroelectric orthorhombic phase and thus serve mainly as the high-k dielectric gate. Charge trapping in the HZO layer that might induce hysteresis has been discussed. Our results show that MoS2/HZO hybrid FETs possess great potential in future low power and high-speed integrated circuits, and future work will focus on further improvement of the transistor performances using ferroelectric HZO films and the study of devices with even shorter MoS2 channels.

Published
2021

6. Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Author

Ministerio de Ciencia, Innovación y Universidades (España), Ministerio de Ciencia e Innovación (España), Agencia Estatal de Investigación (España), European Commission, Generalitat de Catalunya, Silva, José P.B. [0000-0002-3485-7032], Alcala, Ruben [0000-0003-2799-9793], Avci, Uygar E. [0000-0002-0109-1923], Barrett, Nick [0000-0002-8228-0805], Bégon-Lours, Laura [0000-0003-2520-3317], Borg, Mattias [0000-0003-1217-369X], Byun, Seungyong [0009-0002-9590-2690], Chang, Sou Chi 0000-[0001-8128-7784], Cheong, Sang Wook [0000-0001-9905-6175], Choe, Duk Hyun [0000-0002-2775-8976], Coignus, Jean [0000-0001-8898-5999], Deshpande, Veeresh [0000-0002-0349-4857], Dimoulas, Athanasios [0000-0003-3199-1356], Dubourdieu, Catherine [0000-0002-4642-6897], Fina, Ignasi [0000-0003-4182-6194], Funakubo, Hiroshi [0000-0002-1106-200X], Grenouillet, Laurent [0000-0001-6721-0393], Gruverman, Alexei [0000-0003-0492-2750], Heo, Jinseong [0000-0003-2530-488X], Hoffmann, Michael 0000-0001-6493-3457], Hsain, H. Alex [0000-0002-6745-829X], Huang, Fei Ting [0000-0[001-9810-2811], Hwang, Cheol Seong [0000-0002-6254-9758], Íñiguez, Jorge [0000-0001-6435-3604], Jones, Jacob L. [0000-0002-9182-0957], Karpov, Ilya V. [0000-0003-3146-7992], Kersch, Alfred [0000-0003-4407-555X], Kwon, Taegyu [0000-0002-8988-0977], Lancaster, Suzanne [0000-0002-5689-2795], Lederer, Maximilian [0000-0002-1739-2747], Lee, Younghwan [0000-0001-8485-6807], Lomenzo, Patrick D. [0000-0001-8208-3871], Martin, Lane W. [0000-0003-1889-2513], Martin, Simon [0009-0000-6928-3836], Migita, Shinji [0000-0002-5936-9182], Mikolajick, Thomas [0000-0003-3814-0378], Noheda, Beatriz [0000-0001-8456-2286], Park, Min Hyuk [0000-0001-6333-2668], Rabe, Karin M. [0000-0002-7809-7282], Salahuddin, Sayeef [0000-0002-0315-2208], Sánchez Barrera, Florencio [0000-0002-5314-453X], Seidel, Konrad [0009-0003-5889-4414], Shimizu, Takao [0000-0001-9508-7601], Shiraishi, Takahisa [0000-0002-2154-0589], Slesazeck, Stefan [0000-0002-0414-0321], Toriumi, Akira [0009-0005-0275-0854], Uchida, Hiroshi [0000-0002-5448-2987], Vilquin, Bertrand [0000-0002-7404-0019], Xu, Xianghan [0000-0001-6854-300X], Ye, Kun Hee [0000-0003-4953-2983], Schroeder, Uwe [0000-0002-6824-2386], Silva, José P.B., Alcala, Ruben, Avci, Uygar E., Barrett, Nick, Bégon-Lours, Laura, Borg, Mattias, Byun, Seungyong, Chang, Sou Chi, Cheong, Sang Wook, Choe, Duk Hyun, Coignus, Jean, Deshpande, Veeresh, Dimoulas, Athanasios, Dubourdieu, Catherine, Fina, Ignasi, Funakubo, Hiroshi, Grenouillet, Laurent, Gruverman, Alexei, Heo, Jinseong, Hoffmann, Michael, Hsain, H. Alex, Huang, Fei Ting, Hwang, Cheol Seong, Íñiguez, Jorge, Jones, Jacob L., Karpov, Ilya V., Kersch, Alfred, Kwon, Taegyu, Lancaster, Suzanne, Lederer, Maximilian, Lee, Younghwan, Lomenzo, Patrick D., Martin, Lane W., Martin, Simon, Migita, Shinji, Mikolajick, Thomas, Noheda, Beatriz, Park, Min Hyuk, Rabe, Karin M., Salahuddin, Sayeef, Sánchez Barrera, Florencio, Seidel, Konrad, Shimizu, Takao, Shiraishi, Takahisa, Slesazeck, Stefan, Toriumi, Akira, Uchida, Hiroshi, Vilquin, Bertrand, Xu, Xianghan, Ye, Kun Hee, Schroeder, Uwe, Ministerio de Ciencia, Innovación y Universidades (España), Ministerio de Ciencia e Innovación (España), Agencia Estatal de Investigación (España), European Commission, Generalitat de Catalunya, Silva, José P.B. [0000-0002-3485-7032], Alcala, Ruben [0000-0003-2799-9793], Avci, Uygar E. [0000-0002-0109-1923], Barrett, Nick [0000-0002-8228-0805], Bégon-Lours, Laura [0000-0003-2520-3317], Borg, Mattias [0000-0003-1217-369X], Byun, Seungyong [0009-0002-9590-2690], Chang, Sou Chi 0000-[0001-8128-7784], Cheong, Sang Wook [0000-0001-9905-6175], Choe, Duk Hyun [0000-0002-2775-8976], Coignus, Jean [0000-0001-8898-5999], Deshpande, Veeresh [0000-0002-0349-4857], Dimoulas, Athanasios [0000-0003-3199-1356], Dubourdieu, Catherine [0000-0002-4642-6897], Fina, Ignasi [0000-0003-4182-6194], Funakubo, Hiroshi [0000-0002-1106-200X], Grenouillet, Laurent [0000-0001-6721-0393], Gruverman, Alexei [0000-0003-0492-2750], Heo, Jinseong [0000-0003-2530-488X], Hoffmann, Michael 0000-0001-6493-3457], Hsain, H. Alex [0000-0002-6745-829X], Huang, Fei Ting [0000-0[001-9810-2811], Hwang, Cheol Seong [0000-0002-6254-9758], Íñiguez, Jorge [0000-0001-6435-3604], Jones, Jacob L. [0000-0002-9182-0957], Karpov, Ilya V. [0000-0003-3146-7992], Kersch, Alfred [0000-0003-4407-555X], Kwon, Taegyu [0000-0002-8988-0977], Lancaster, Suzanne [0000-0002-5689-2795], Lederer, Maximilian [0000-0002-1739-2747], Lee, Younghwan [0000-0001-8485-6807], Lomenzo, Patrick D. [0000-0001-8208-3871], Martin, Lane W. [0000-0003-1889-2513], Martin, Simon [0009-0000-6928-3836], Migita, Shinji [0000-0002-5936-9182], Mikolajick, Thomas [0000-0003-3814-0378], Noheda, Beatriz [0000-0001-8456-2286], Park, Min Hyuk [0000-0001-6333-2668], Rabe, Karin M. [0000-0002-7809-7282], Salahuddin, Sayeef [0000-0002-0315-2208], Sánchez Barrera, Florencio [0000-0002-5314-453X], Seidel, Konrad [0009-0003-5889-4414], Shimizu, Takao [0000-0001-9508-7601], Shiraishi, Takahisa [0000-0002-2154-0589], Slesazeck, Stefan [0000-0002-0414-0321], Toriumi, Akira [0009-0005-0275-0854], Uchida, Hiroshi [0000-0002-5448-2987], Vilquin, Bertrand [0000-0002-7404-0019], Xu, Xianghan [0000-0001-6854-300X], Ye, Kun Hee [0000-0003-4953-2983], Schroeder, Uwe [0000-0002-6824-2386], Silva, José P.B., Alcala, Ruben, Avci, Uygar E., Barrett, Nick, Bégon-Lours, Laura, Borg, Mattias, Byun, Seungyong, Chang, Sou Chi, Cheong, Sang Wook, Choe, Duk Hyun, Coignus, Jean, Deshpande, Veeresh, Dimoulas, Athanasios, Dubourdieu, Catherine, Fina, Ignasi, Funakubo, Hiroshi, Grenouillet, Laurent, Gruverman, Alexei, Heo, Jinseong, Hoffmann, Michael, Hsain, H. Alex, Huang, Fei Ting, Hwang, Cheol Seong, Íñiguez, Jorge, Jones, Jacob L., Karpov, Ilya V., Kersch, Alfred, Kwon, Taegyu, Lancaster, Suzanne, Lederer, Maximilian, Lee, Younghwan, Lomenzo, Patrick D., Martin, Lane W., Martin, Simon, Migita, Shinji, Mikolajick, Thomas, Noheda, Beatriz, Park, Min Hyuk, Rabe, Karin M., Salahuddin, Sayeef, Sánchez Barrera, Florencio, Seidel, Konrad, Shimizu, Takao, Shiraishi, Takahisa, Slesazeck, Stefan, Toriumi, Akira, Uchida, Hiroshi, Vilquin, Bertrand, Xu, Xianghan, Ye, Kun Hee, and Schroeder, Uwe

Abstract

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2-ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

Published
2023

7. Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Author

Segantini, Greta, primary, Manchon, Benoît, additional, Cañero Infante, Ingrid, additional, Bugnet, Matthieu, additional, Barhoumi, Rabei, additional, Nirantar, Shruti, additional, Mayes, Edwin, additional, Rojo Romeo, Pedro, additional, Blanchard, Nicholas, additional, Deleruyelle, Damien, additional, Sriram, Sharath, additional, and Vilquin, Bertrand, additional

Published
2023
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10. Elaboration and imprint consideration in HfZrO2 ferroelectric capacitors

Author

Bouaziz, Jordan, Segantini, Greta, Manchon, Benoît, Cañero Infante, Ingrid, Baboux, Nicolas, Bugnet, Matthieu, Rojo Romeo, Pedro, Deleruyelle, D., Vilquin, Bertrand, INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), INL - Electronique (INL - ELEC), NamLab, European Project: 780302,EC | H2020 | RIA,3eFERRO(2018), and European Project: ECLAUSion

Subjects
[SPI]Engineering Sciences [physics], Oxide /oxide, Ferroelectric material, Thin film
Abstract

International audience

Published
2023

11. Fabrication of HfZrO2 ferroelectric capacitors and study of wake-up & imprint dynamics

Author

Vilquin, Bertrand, INL - Electronique (INL - ELEC), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon, NTNU Nano, European Project: 958174,M-ERA.NET NanOx4EStor, European Project: 780302,EC | H2020 | RIA,3eFERRO(2018), and European Project: ECLAUSion

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; The discovery of the ferroelectric orthorhombic phase in doped HfO2 gave a major boost to the interest for integrated ferroelectric oxides in the CMOS industry. Given its low crystallization temperature, HfZrO2 (HZO) is an excellent candidate for both front and back-end of line integration of ferroelectric Non-Volatile Memories or artificial synapses. Although promising demonstrations of have been disclosed, achieving minimum wake-up and imprint behavior remains a significant challenge. In this work, elaboration by sputtering of HZO films and wake-up & imprint dynamics are studied.

Published
2023

12. List of Contributors

Author

Addou, Rafik, primary, Aho, Arto, additional, Andrews, Aaron M., additional, Anthony, Richardella, additional, As, Donat J., additional, Avrutin, Vitaliy, additional, Bell, Gavin R., additional, Bietti, Sergio, additional, Blinov, Victor, additional, Castellano, Andrea, additional, Cerutti, Laurent, additional, Clark, Kevin, additional, Cornet, Charles, additional, Da Silva, Mickaël, additional, Dang, Phillip, additional, Detz, Hermann, additional, Doran, Molly, additional, Durand, Olivier, additional, Farrell, Stephen, additional, Fischer, I.A., additional, Fraser, Everett, additional, Freundlich, Alex, additional, Garreau, Alexandre, additional, Guina, Mircea, additional, Hakkarainen, Teemu, additional, Hanser, Drew, additional, Hernández-Calderón, Isaac, additional, Hinkle, Christopher L., additional, Horikosh, Yoshiji, additional, Ignatiev, Alex, additional, Ivanov, Sergey V., additional, Jäger, Roland, additional, Jmerik, Valentin N., additional, Johnson, Shane R., additional, Kao, Yung-Chung, additional, Koguchi, Nobuyuki, additional, Kou, Xufeng, additional, Kuo, Jenn-Ming, additional, Kuze, Naohiro, additional, Lelarge, François, additional, Levallois, Christophe, additional, Li, Juan, additional, Li, Wei, additional, Lischka, Klaus, additional, Lopes, Joao Marcelo Jordao, additional, MacFarland, Donald, additional, Madiomanana, Karine, additional, Marek, Matthew, additional, Mi, Zetian, additional, Morkoç, Hadis, additional, Myronov, Maksym, additional, Narcy, Grégoire, additional, Nechaev, Dmitrii V., additional, Nie, Tianxiao, additional, Nikiforov, Alexander, additional, Nishinaga, Jiro, additional, Nitin, Samarth, additional, Niu, Gang, additional, Oe, Kunishige, additional, Oehme, M., additional, O’Steen, Mark, additional, Özgür, Ümit, additional, Pchelyakov, Oleg, additional, Pinsukanjana, Paul, additional, Pridachin, Dmitry, additional, Readinger, Eric, additional, Rodriguez, Jean-Baptiste, additional, Saint-Girons, Guillaume, additional, Sanguinetti, Stefano, additional, Schaefer, Stephen T., additional, Schöll, Achim, additional, Schramm, Andreas, additional, Schreiber, Frank, additional, Schrenk, Werner, additional, Schulze, J., additional, Sedova, Irina V., additional, Shalindar, Arvind J., additional, Shen, Aidong, additional, Shibasaki, Ichiro, additional, Sokolov, Leonid, additional, Sorokin, Sergey V., additional, Springholz, Gunther, additional, Strasser, Gottfried, additional, Tang, Jianshi, additional, Tournié, Eric, additional, Vargason, Kevin, additional, Vignaud, Dominique, additional, Viheriälä, Jukka, additional, Vilquin, Bertrand, additional, Vishwanath, Suresh, additional, Wallace, Robert M., additional, Walsh, Lee A., additional, Wang, Kang L., additional, Wang, Shu M., additional, Webster, Preston T., additional, Xing, Huili G., additional, Xiu, Faxian, additional, Yoshimoto, Masahiro, additional, Zederbauer, Tobias, additional, and Zhao, Songrui, additional

Published
2018
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14. Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors.

Author

Segantini, Greta, Manchon, Benoît, Cañero Infante, Ingrid, Bugnet, Matthieu, Barhoumi, Rabei, Nirantar, Shruti, Mayes, Edwin, Rojo Romeo, Pedro, Blanchard, Nicholas, Deleruyelle, Damien, Sriram, Sharath, and Vilquin, Bertrand

Subjects
FERROELECTRIC capacitors, TUNNEL junctions (Materials science), TUNGSTEN electrodes, TITANIUM nitride, FERROELECTRIC devices, ZIRCONIUM oxide, TUNGSTEN alloys
Abstract

Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology. Ferroelectricity in HZO films is significantly influenced by the properties of electrode/HZO interfaces. Here, the impact of the interfacial microstructure and chemistry on the ferroelectricity of 6 nm‐thick HZO‐based capacitors, realized by sputtering, with titanium nitride or tungsten electrode materials, is investigated. The results highlight a strong correlation between the structural properties of electrode/HZO interfaces and the HZO ferroelectric performance. Interface effects become significant at low HZO thickness, thus the precise control over the quality of electrode/HZO interfaces allows the remarkable improvement of HZO ferroelectric properties. A double remanent polarization of 40 µC cm−2 is achieved. This work is a new step towards high quality ultra‐thin HZO films with enhanced ferroelectricity for the implementation of ferroelectric tunnel junctions for brain‐inspired computing. [ABSTRACT FROM AUTHOR]

Published
2023
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16. Engineering the nano and micro structures of sputtered HfZrO2 thin films

Author

Bouaziz, Jordan, Segantini, Greta, Manchon, Benoît, Barhoumi, Rabei, Cañero Infante, Ingrid, Deleruyelle, Damien, Baboux, Nicolas, Rojo Romeo, Pedro, Vilquin, Bertrand, INL - Electronique (INL - ELEC), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon, INL - Dispositifs Electroniques (INL - DE), INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), European Project: 780302,EC | H2020 | RIA,3eFERRO(2018), and European Project: 958174,M-ERA.NET NanOx4EStor

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; We focus on (Hf,Zr)O2 thin films deposition for the capacitor of FRAM in the 1T-1C. (Hf,Zr)O2 thin films are studied to either fully understand the stabilization of the ferroelectric phase or to fit with industrial requirements. Changing the pressure in our sputtering chamber during the room temperature deposition lead to the deposition of crystalline or amorphous films. After a Rapid Thermal Annealing, only the amorphous films crystallize in the ferro-phase [1]. Samples are stacks of Si/TiN/Hf0.5Zr0.5O/TiN/Pt. The samples are called NM, and M: NM and M refers to two different architectures, respectively non-mesa and mesa structures [2]. The set-up for electrical measurements have been described in reference [3]. We report the fabrication of two samples deposited by magnetron sputtering with excellent performances, quite similar to samples deposited by ALD. Pr values are among the highest for samples deposited by sputtering. Although the N-sample and NM-samples show very close Pr values, the two samples show completely different electrical behaviors. During cycling, the increase of Pr value for the NM-sample is more than an order of magnitude higher than the M-sample. It is accompanied by a decrease of the endurance which is two order of magnitude higher for the NM-sample than for the M-sample. The origins of the different electrical behaviors come from the micro-crystalline structures of the two samples, according to GIXRD results. The crystallization takes place during the annealing step. It induces different stress states which lead to two different micro-crystalline patterning. The M-sample shows no monoclinic peak, whereas the NM-sample shows many monoclinic orientations. It can explain the huge reduction of the wake-up effect.[1] J. Bouaziz et al. JVST B 37, 021203 (2019).[2] J. Bouaziz et al. ACS Appl. Electron. Mater. 1, 1740 (2019).[3] J. Bouaziz et al. APL Mater. 7, 081109 (2019).

Published
2023

17. Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity

Author

Segantini, Greta, Barhoumi, Rabei, Manchon, Benoît, Canero Infante, Ingrid, Bugnet, Mathieu, Rojo Romeo, Pedro, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand, INL - Electronique (INL - ELEC), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon, Royal Melbourne Institute of Technology University (RMIT University), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), INL - Dispositifs Electroniques (INL - DE), INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), IPCEI NANO 2022, European Project: 780302,EC | H2020 | RIA,3eFERRO(2018), European Project: ECLAUSion, and European Project: 958174,M-ERA.NET NanOx4EStor

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; Keeping the miniaturisation pace in the modern semiconductor technology, while chasing an increased computing efficiency, has stimulated the research to focus on novel computing paradigms. One of these is neuromorphic engineering, which aims at the physical implementation of devices mimicking biological neuron and synapses. In this context, memristors based on ferroelectric material are promising candidates to implement synaptic functions. For instance ferroelectric tunnel junction (FTJ) memristors, based on HfZrO2 (HZO) have shown synaptic learning abilities [1]. In addition, HZO processes are already fully compatible with the CMOS industry, with oxide layers thinner than 10 nm. In this work we present a comparative study of different HZO-based FTJs. By interface engineering, we aimed at improving the structural and electrical performances of ultra-thin ferroelectric HZO films. The HZO was synthesized by magnetron sputtering from a Hf0.5Zr0.5O2 ceramic target and subsequently crystallized by rapid thermal annealing [2]. We compared the structural properties and the electrical performances of sub-8 nm HZO layers sandwiched between bottom and top electrodes made of titanium nitride or tungsten. Furthermore, we probed the effect on the ferroelectric properties of HZO of the insertion of an ultra-thin titanium layer at the electrode/HZO interface. The microstructure and the chemical properties of HZO were investigated by means of glancing incidence X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy. Electrical characterization was conducted using the positive-up-negative-down-technique and by the acquisition of current vs voltage characteristics. We propose optimized stacks with enhanced ferroelectricity, which are considered for the implementation of FTJs, and for the demonstration of synaptic learning mechanisms for neuromorphic applications [3].[1] L. Chen et al. Nanoscale, vol. 10, no. 33, pp. 15826–15833, 2018.[2] J. Bouaziz et al., ACS Applied Electronic Materials 1 (9), 1740-1745, 2019.[3] G. Segantini et al., physica status solidi (RRL)–Rapid Research Letters, 2100583, 2022.

Published
2023

18. Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer

Author

Segantini, Greta, primary, Barhoumi, Rabei, additional, Manchon, Benoît, additional, Cañero Infante, Ingrid, additional, Rojo Romeo, Pedro, additional, Bugnet, Matthieu, additional, Baboux, Nicolas, additional, Nirantar, Shruti, additional, Deleruyelle, Damien, additional, Sriram, Sharath, additional, and Vilquin, Bertrand, additional

Published
2022
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23. Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr 0.2 Ti 0.8 O 3 Films Assisted by Nanocavities

Author

Gonzalez Casal, Sergio, primary, Bai, Xiaofei, additional, Alhada‐Lahbabi, Kevin, additional, Canut, Bruno, additional, Vilquin, Bertrand, additional, Rojo Romeo, Pedro, additional, Brottet, Solène, additional, Albertini, David, additional, Deleruyelle, Damien, additional, Bugnet, Matthieu, additional, Canero Infante, Ingrid, additional, and Gautier, Brice, additional

Published
2022
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24. Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctions

Author

Segantini, Greta, Rojo Romeo, Pedro, Manchon, Benoit, Baboux, Nicolas, Infante, Ingrid, Barhoumi, Rabei, Istrate, Cosmin, Pintilie, Lucian, Deleruyelle, Damien, Vilquin, Bertrand, Sriram, Sharath, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), The I3E ECLAUSionproject has received funding from the European Union's Horizon 2020 research and innovation programmeunder the Marie Skłodowska-Curie grant agreement No 801512., EMRS, and Vilquin, Bertrand

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; After more than 40 years of continuous evolution, our computing systems are reaching their limits. Indeed, the architecture of Von-Neumann, on which our computers are based, physically dissociates the hearts of calculations from the memory. The sequential processing of information is thus confronted with a bottleneck, more commonly known as "Memory Bottleneck". A solution is to draw inspiration from the natural mathematical paradigms of the human brain, in which the data are massively parallel processed with high energy efficiency, realizing the hardware implementation of neuromorphic networks. This approach opens the possibility to bring the information storage sites (synapses) closer to the treatment sites (neurons).The discovery of memristor, theorized in 1971 by L. Chua, has led to the development of novel artificial neuromorphic concepts and devices, including ferroelectric-based ones. Ferroelectric Tunnel Junction (FTJ) type memristors based on zirconium-doped hafnium oxide, Hf_0.5 Zr_0.5 O_2 (HZO) have recently displayed synaptic learning capabilities [1]. In addition, HZO processes are already fully compatible with silicon CMOS industry with oxide layers thinner than 10 nm. In the present work, the HZO layer is realized by room temperature magnetron sputtering of a Hf_0.5 Zr_0.5 O_2 ceramic target and subsequently crystallized by rapid thermal annealing [2]. Using different bottom electrode layers (germanium, titanium nitride, platinum) grown on silicon and different substrates (n-doped silicon, n-doped germanium), we studied the effect on the stabilized crystalline phase and microstructure, band structure alignment and electrical properties of thin HZO films. Furthermore, we explored the effect of ultra-thin buffer layers between the electrodes and the HZO layer, trading on the material, the position and the thickness. We exploited X-ray photoemission spectroscopy to analyze the chemistry and the electronic state of the electrodes/HZO interface. X-ray reflectometry and grazing incidence X-ray diffraction (GIXRD) were used to probe the thickness and structural characteristics of the HZO layer, whose ferroelectricity is associated to the polar orthorhombic phase. We will discuss our results in the framework of structural, chemical and physical properties of the different electrode/ferroelectric interfaces and their effect on the electrical properties of thin HZO-based junctions.References:[1] L. Chen et al. Nanoscale, vol. 10, no. 33, pp. 15826–15833, 2018.[2] J. Bouaziz, et al., ACS Applied Electronic Materials 1 (9), 1740-1745, 2019.

Published
2021

25. Influence of bottom electrodes on HZO thin film features

Author

Rojo Romeo, Pedro, Ingrid C., Infante, Segantini, Greta, Romeo, Pedro, Manchon, Benoit, Baboux, Nicolas, Ca Nero Infante, Ingrid, Barhoumi, Rabei, Deleruyelle, D., Vilquin, Bertrand, Sriram, Sharath, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), The I3E ECLAUSion project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 801512., and Vilquin, Bertrand

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; The I3E ECLAUSion project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 801512 Neuromorphic computing is promising for the processing of massive data with an extremely low power consumption. After the discovery of memristors the research has been focused on the study and development of novel artificial neuromorphic devices, including ferroelectric-based ones.

Published
2021

26. Reduction of HfZrO2 capacitor wake-up effect

Author

Bouaziz, J, Baboux, N, Rojo-Romeo, P, Vilquin, Bertrand, INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), APL Materials, European Project: 780302,EC | H2020 | RIA,3eFERRO(2018), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Vilquin, Bertrand, Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2 - 3eFERRO - - EC | H2020 | RIA2018-01-01 - 2021-06-30 - 780302 - VALID, and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; Wake-up effect is a major issue for ferroelectric HfO2-based memory devices. Here, two TiN/Hf0.5Zr0.5O2/TiN structures deposited by magnetron sputtering on silicon are compared. The maximum remanant polarization is higher than 21µC/cm² for both samples, a strong difference is observed in the electrical behavior. For the mesa sample, the difference between maximal and initial Pr is only 3µC/cm² whereas it is around 14µC/cm² in the non-mesa case. We discuss the root causes of these behaviors in light of structural results. Various applications have been suggested for fluorite-structure ferroelectrics due to their advantages over the conventional perovskite-structure ferroelectrics. In this presentation we will focus on (Hf,Zr)O2 (HZO) thin films deposition for the capacitor of Ferroelectric Random Access Memories (FRAM) in the 1Transitor-1Capacitor (1T-1C) model. (Hf,Zr)O2 thin films are studied to either fully understand the stabilization of the ferroelectric phase (f-phase) or to fit with industrial requirements. Samples are stacks of Si/TiN/Hf0.5Zr0.5O/TiN/Pt. All materials are grown by sputtering at room temperature following by a rapid thermal annealing at 450°C during 30 seconds under N2 atmosphere. The samples are called NM, and M. NM and M refers to two different architectures, respectively non-mesa and mesa structures. We report the fabrication of two samples deposited by magnetron sputtering with excellent performances, quite similar to samples deposited by Atomic Layer Deposition. Pr values are among the highest for samples deposited by sputtering. Although the N-sample and NM-samples show very close Pr values, the two samples show completely different electrical behaviors. During cycling, the increase of Pr value for the NM-sample is more than an order of magnitude higher than the M-sample. It is accompanied by a decrease of the endurance which is two order of magnitude higher for the NM-sample than for the M-sample. As electrical behaviors are not the same, for low stress conditions M-sample has a higher Pr value during cycling whereas for high stress conditions NM-sample has a higher Pr value during cycling. As a matter of fact, it has been proven that maximum Pr values are more sensitive to stress conditions than the structures themselves. The origins of the different electrical behaviors come from the micro-crystalline structures of the two samples, according to GIXRD results. The crystallization takes place during the annealing step. During annealing, M-sample is built with a TiN TE fully covering the HZO layer whereas the TiN covers only partially the HZO layer in case of the NM-sample. It induces different stress states which lead to two different micro-crystalline patterning. The M-sample shows no monoclinic peak, whereas the NM-sample shows many monoclinic orientations. It can explain the huge reduction of the wake-up effect.

Published
2021

27. Développement de capteurs environnementaux ultra-basse consommation à base de SnO2

Author

Assaf, Antonio, Pelissier, Bernard, Levert, Theo, Cañero Infante, Ingrid, Salem, Bassem, Bendahan, Marc, Monfray, Stephane, Vilquin, Bertrand, Souifi, Abdelkader, and Vilquin, Bertrand

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Published
2021

29. Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer.

Author

Segantini, Greta, Barhoumi, Rabei, Manchon, Benoît, Cañero Infante, Ingrid, Rojo Romeo, Pedro, Bugnet, Matthieu, Baboux, Nicolas, Nirantar, Shruti, Deleruyelle, Damien, Sriram, Sharath, and Vilquin, Bertrand

Subjects
ELECTRON energy loss spectroscopy, FERROELECTRICITY, TITANIUM nitride, MAGNETRON sputtering, CAPACITORS, TITANIUM dioxide films, TIN
Abstract

The effect at the nanoscale of a Ti interfacial layer on the performances of TiN/HfZrO2/TiN capacitors is reported. Ferroelectric hafnium zirconium oxide (HZO) is synthesized by magnetron sputtering of a Hf0.5Zr0.5O2ceramic target. Titanium nitride top and bottom electrodes are grown by reactive magnetron sputtering. The insertion of an ultra‐thin Ti layer at the top electrode/HZO interface impacts the crystalline phase and the electrical properties of the ferroelectric HZO. Following post‐deposition annealing, the Ti layer is oxidized and becomes titanium oxide. Compositional and structural characterization is performed using glancing incidence X‐Ray diffraction and electron energy‐loss spectroscopy. The TiOz layer is clearly distinguishable at the top electrode/HZO interface. Electrical characterization is conducted by positive‐up‐negative‐down (PUND) technique. The remnant polarization reaches a maximum value of 25 μC cm−2 for 6 nm thick HZO. The results are discussed in the framework of structural, compositional, and physical properties of the electrode/HZO interfaces and their effect on the electrical performances of thin HZO‐based junctions, which could subsequently be considered for the demonstration of synaptic learning mechanisms for neuromorphic applications. [ABSTRACT FROM AUTHOR]

Published
2022
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30. Use of epitaxial PZT thin films for La2/3Sr1/3MnO3based MEMs devices on SrTiO3/Si

Author

De Araujo, Laryssa Mirelly Carvalho, primary, Manguele, Jacques Junior, additional, Vilquin, Bertrand, additional, Wang, Zhe, additional, Adamo, Carolina, additional, Romeo, Pedro Rojo, additional, Cibert, Christophe, additional, Poullain, Gilles, additional, Domenges, Bernadette, additional, Pierron, Victor, additional, Schlom, Darrell G., additional, and Mechin, Laurence, additional

Published
2021
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31. Imprint issue during retention tests for HfO2 -based FRAM: An industrial challenge?

Author

Bouaziz, Jordan, Rojo Romeo, P., BABOUX, N., Vilquin, Bertrand, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Hardware_GENERAL, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; Note: This paper is part of the Special Topic on Materials and Devices Utilizing Ferroelectricity in Halfnium Oxide.

Published
2021
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32. Strain dependence of dissociative adsorption of H 2 O on epitaxially strained, out-of-plane polarized, BaTiO 3 (001) thin films

Author

Wang, J.L., She, S.J., Gaillard, F., Niu, G., Vilquin, Bertrand, Barrett, N., INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Barium titanate, Thin films, X-ray Photoelectron Spectroscopy, Temperature programmed desorption, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], water vapor adsorption, [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; The strain dependence of the apparent activation energy of desorption of H 2 O on epitaxial, TiO 2-terminated, outof-plane polarized, BaTiO 3 (100) thin films has been investigated using X-ray diffraction, X-ray photoelectron spectroscopy and temperature-programmed desorption. The apparent activation energy of desorption increases significantly with the in-plane strain, suggesting that the strain-induced ferroelectric distortion determines the strength of the chemical bond between the dissociatively adsorbed water and the surface.

Published
2021
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33. Huge working pressure effect on the ferroelectric properties of RF sputtered hafnia/zirconia layers

Author

Vilquin, Bertrand, Bouaziz, Jordan, BABOUX, Nicolas, ROJO ROMEO, Pédro, Pintilie, Lucian, NEGREA, R., INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), INL - Dispositifs Electroniques (INL - DE), INL - Nanophotonique (INL - Photonique), National Institute of Materials Physics (NIMP), National Institute of materials Physics, NamLab, European Project: 780302,EC | H2020 | RIA,3eFERRO(2018), Vilquin, Bertrand, Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2 - 3eFERRO - - EC | H2020 | RIA2018-01-01 - 2021-06-30 - 780302 - VALID, Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.MATE] Chemical Sciences/Material chemistry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2019

34. First principles study on the lattice thermal conductivity of α-phase Ga2O3.

Author

Yang, Gang, Romeo, Pedro Rojo, Apostoluk, Aleksandra, and Vilquin, Bertrand

Subjects
BOLTZMANN'S equation, THERMAL conductivity, PHONON scattering, MOLECULAR force constants, BOND strengths
Abstract

In this article, lattice thermal conductivity of α-phase Ga2O3 is investigated in a way of combining the first principles calculation and iterative solving the Boltzmann transport equation. Real-space displacement approach is employed in order to obtain both second- and third-order force constants. The effect of the microstructure on lattice thermal conductivity of α-phase Ga2O3 has been extensively studied and widely discussed. The results indicate that α-phase Ga2O3 exhibit a lower thermal conductivity compared with β-phase Ga2O3 in a temperature range from 30 to 800 K. At room temperature, 300 K, the calculated thermal conductivities of α-phase Ga2O3 are 11.61, 9.38, and 8.94 Wm−1 K−1 in the directions [100], [010], and [001], respectively. The lower thermal conductivity of α-phase Ga2O3 can be attributed to the mass difference and bond strength between Ga and O atoms. As for the phonon transport analysis, it is related to the three phonon scattering mechanism. Compared with β-phase Ga2O3, α-phase Ga2O3 exhibits a higher anharmonic phonon scattering rate. Our study aims to help to understand the thermal transport mechanism of α-phase Ga2O3 material and provide useful guidance for the future device applications and enrich the existing state of the art. [ABSTRACT FROM AUTHOR]

Published
2022
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35. Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr0.2Ti0.8O3 Films Assisted by Nanocavities.

Author

Gonzalez Casal, Sergio, Bai, Xiaofei, Alhada‐Lahbabi, Kevin, Canut, Bruno, Vilquin, Bertrand, Rojo Romeo, Pedro, Brottet, Solène, Albertini, David, Deleruyelle, Damien, Bugnet, Matthieu, Canero Infante, Ingrid, and Gautier, Brice

Subjects
FERROELECTRIC thin films, THICK films, ATOMIC force microscopes, DIELECTRIC polarization, LEAD zirconate titanate, STRAINS & stresses (Mechanics), THIN films, CHEMICAL solution deposition
Abstract

The mechanical switching of ferroelectric domains is achieved in PbZr0.2Ti0.8O3 thin films obtained by the sol‐gel method for thicknesses up to 200 nm. The dielectric polarization can be switched when a force higher than a given threshold value in the order of some μNewtons is applied with the tip of an atomic force microscope. This threshold is determined as a function of the thickness of the films, and local hysteresis loops are recorded under mechanical stress. The possibility of switching the polarization in such unusually thick films is related to the existence in their volume of physical nanoscale defects, which might play the role of pinning centers for the domains. [ABSTRACT FROM AUTHOR]

Published
2022
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36. Spatial modulation of graphene's chemical potential

Author

Lhuillier, Jérémy, Demongodin, Pierre, Wood, Thomas, Kemiche, Malik, Vilquin, Bertrand, Grenet, Geneviève, Cueff, Sébastien, Rojo-Romeo, Pedro, Letartre, Xavier, Monat, Christelle, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), LHUILLIER, Jérémy, GRAphene nonlinear PHotonic Integrated CircuitS - GRAPHICS - - H20202015-09-01 - 2020-09-01 - 648546 - VALID, Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and INL - Matériaux Fonctionnels et Nanostructures (INL - MFN)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2020

37. Low-voltage, broadband graphene-coated Bragg mirror electro-optic modulator at telecom wavelengths

Author

Wood, Thomas, Lhuillier, Jérémy, KEMICHE, Malik, Demongodin, Pierre, Vilquin, Bertrand, ROJO ROMEO, Pédro, Belarouci, Ali, Berguiga, Lotfi, Callard, Ségolène, Letartre, Xavier, Monat, Christelle, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), European Project: 648546,H2020,ERC-2014-CoG,GRAPHICS(2015), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Physics::Optics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; We demonstrate a graphene based electro-optic free-space modulator yielding a reflectance contrast of 20% over a strikingly large 250nm wavelength range, centered in the near-infrared telecom band. Our device is based on the original association of a planar Bragg reflector, topped with an electrically contacted double-layer graphene capacitor structure employing a high work-function oxide shown to confer a static doping to the graphene in the absence of an external bias, thereby reducing the switching voltage range to +/-1V. The device design, fabrication and opto-electric characterization is presented, and its behavior modeled using a coupled optical-electronic framework.

Published
2020
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38. Comparison of Epitaxial and Textured Ferroelectric BaTiO3 Thin Films

Author

WAGUE, Baba, BABOUX, Nicolas, Romeo, Pedro Rojo, Robach, Yves, Vilquin, Bertrand, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Dispositifs Electroniques (INL - DE), and INL - Nanophotonique (INL - Photonique)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.MATE]Chemical Sciences/Material chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2020
Full Text
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40. Contributors

Author

Andrieu, S., primary, As, Donat J., additional, Avrutin, V., additional, Batool, Zahida, additional, Bensaoula, Abdelhak, additional, Bierwagen, Oliver, additional, Blinov, Victorz, additional, Boney, Chris, additional, Chatterjee, Sangam, additional, Chernikov, Alexej, additional, Chi, J.Y., additional, Colli, Alan, additional, Davidson, Bruce, additional, Doran, Molly, additional, Dumesnil, K., additional, Duzik, Adam, additional, Eckstein, James N., additional, Engel-Herbert, Roman, additional, Franchi, Secondo, additional, Freundlich, Alex, additional, Fritz, Rafael, additional, Gogineni, Chaturvedi, additional, Guina, Mircea, additional, Hanser, Drew, additional, Heiblum, M., additional, Hernández-Calderón, Isaac, additional, Hild, Konstanze, additional, Horikoshi, Yoshiji, additional, Hosea, Thomas J.C., additional, Ignatiev, Alex, additional, Imhof, Sebastian, additional, Kossut, J., additional, Ivanov, S.V., additional, Jäger, Roland, additional, Jiang, Zenan, additional, Jin, Shirong, additional, Johnson, Shane R., additional, Katkov, A.V., additional, Kłopotowski, Ł., additional, Koch, Martin, additional, Koch, Stephan W., additional, Koguchi, Nobuyuki, additional, Kolata, Kolja, additional, Kuze, Naohiro, additional, Lewis, Ryan B., additional, Lischka, Klaus, additional, Lu, Xianfeng, additional, Martelli, Faustino, additional, Masnadi-Shirazi, Mostafa, additional, Matsukura, F., additional, Millunchick, Joanna Mirecki, additional, Mooney, Patricia M., additional, Moreau, E., additional, Morkoç, H., additional, Nikiforov, Alexander, additional, Nishinaga, Jiro, additional, Niu, Gang, additional, O'Steen, Mark, additional, Oe, Kunishige, additional, Oh, Seongshik, additional, Ohno, H., additional, Özgür, Ü., additional, Pchelyakov, Oleg, additional, Pridachin, Dmitry, additional, Readinger, Eric, additional, Riordan, Nathaniel A., additional, Rubel, Oleg, additional, Rubini, Silvia, additional, Saint-Girons, Guillaume, additional, Sanguinetti, Stefano, additional, Schöll, Achim, additional, Schreiber, Frank, additional, Sedova, I.V., additional, Shibasaki, Ichiro, additional, Sokolov, Leonid, additional, Sorokin, S.V., additional, Speck, James S., additional, Springholz, Gunther, additional, Sweeney, Stephen J., additional, Thomas, John C., additional, Thränhardt, Angela, additional, Tiedje, Thomas, additional, Tsai, Min-Ying, additional, Umansky, V., additional, Vignaud, D., additional, Vilquin, Bertrand, additional, Volz, Kerstin, additional, Wang, Shu Min, additional, Wang, Guang, additional, Warusawithana, Maitri, additional, Wasilewski, Z.R., additional, White, Mark E., additional, Wojnar, P., additional, Xue, Qi-Kun, additional, Yoshimoto, Masahiro, additional, Zhai, Xiaofang, additional, and Zheng, Mao, additional

Published
2013
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41. Structural and magnetic properties of Nd(0.7)Ce(0.3)MnO3 thin films

Author

Yanagida, Takeshi, Kanki, Teruo, Vilquin, Bertrand, Tanaka, Hidekazu, and Kawai, Tomoji

Subjects
Dielectric films -- Magnetic properties, Dielectric films -- Design and construction, Thin films -- Magnetic properties, Thin films -- Design and construction, Neodymium -- Magnetic properties, Neodymium -- Structure, Cerium -- Magnetic properties, Cerium -- Structure, Transmission electron microscopes -- Usage, Ferromagnetic materials -- Magnetic properties, Ferromagnetic materials -- Structure, Physics
Abstract

The structural and magnetic properties of Nd(0.7)Ce(0.3)MnO3 (NCeMO) epitaxial thin films lacking Ce-rich impurities is reported in order to investigate the effect of ionic radius of the A site cation on the microstructures and magnetic properties in comparision with (La, Ce)MnO3 (LCeMO) systems. The results by high resolution transmission electron microscopy confirmed the absence of Ce-rich impurities in NCeMO films.

Published
2006

44. Towards low-power near-infrared modulators operating at telecom wavelengths: when graphene plasmons frustrate their metallic counterparts

Author

Wood, Thomas, primary, Kemiche, Malik, additional, Lhuillier, Jérémy, additional, Demongodin, Pierre, additional, Vilquin, Bertrand, additional, Rojo-Romeo, Pedro, additional, Benamrouche, Aziz, additional, Régrény, Philippe, additional, Callard, Ségolène, additional, Letartre, Xavier, additional, and Monat, Christelle, additional

Published
2020
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49. Study of the Electrical and Electronic Properties of Domains and Domain Walls in Ferroelectrics Combining AFM and STEM Techniques

Author

Gonzalez Casal, Sergio, Albertini, David, Ingrid C., Infante, BABOUX, Nicolas, BROTTET, Solène, Sánchez, Florencio, Vilquin, Bertrand, Bugnet, Matthieu, Bai, Xiaofei, Gautier, Brice, GAUTIER, Brice, INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Plateforme Technologique Nanolyon (INL - Nanolyon), Institut de Ciencia de materials de barcelone, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2019

50. A Thorough Study of Ferroelectric Sputtered (Hf, Zr)O2 Solid Solutions

Author

Bouaziz, Jordan, Rojo Romeo, Pedro, BABOUX, Nicolas, Gautier, Brice, Vilquin, Bertrand, GAUTIER, Brice, INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'électronique, optoélectronique et microsystèmes (LEOM), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), INL - Dispositifs Electroniques (INL - DE), and INL - Hétéroepitaxie et Nanostructures (INL - H&N)

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ferroelectrics, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, ComputingMilieux_MISCELLANEOUS, HfZrO2, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2019

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