106 results on '"Villarrubia, John S."'
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2. Unmasking the resolution$-$throughput tradespace of focused-ion-beam machining
3. Probing Electrified Liquid-Solid Interfaces with Scanning Electron Microscopy
4. Conventional vs. model-based measurement of patterned line widths from scanning electron microscopy profiles
5. An a Posteriori Error Estimate for Scanning Electron Microscope Simulation with Adaptive Mesh Refinement
6. Model validation for scanning electron microscopy
7. Unmasking the Resolution–Throughput Tradespace of Focused‐Ion‐Beam Machining (Adv. Funct. Mater. 38/2022)
8. Tip Characterization for Dimensional Nanometrology
9. Probing Electrified Liquid–Solid Interfaces with Scanning Electron Microscopy
10. Electron Inelastic Mean Free Paths for LiF, CaF2, Al2O3, and Liquid Water from 433 keV down to the Energy Gap
11. Tip Characterization for Dimensional Nanometrology
12. Shape-sensitive linewidth measurements of resist structures
13. Three-Dimensional (3D) Nanometrology Based on Scanning Electron Microscope (SEM) Stereophotogrammetry
14. Comparison of Electron Imaging Modes for Dimensional Measurements in the Scanning Electron Microscope
15. Optimizing hybrid metrology: rigorous implementation of Bayesian and combined regression
16. Optimizing hybrid metrology: rigorous implementation of Bayesian and combined regression
17. 10nm three-dimensional CD-SEM metrology
18. Scanning electron microscopy imaging of ultra-high aspect ratio hole features
19. Can we get 3D-CD metrology right?
20. Proximity-associated errors in contour metrology
21. Linewidth Roughness and Cross-sectional Measurements of Sub-50 nm Structures Using CD-SAXS and CD-SEM
22. Linewidth roughness and cross-sectional measurements of sub-50 nm structures with CD-SAXS and CD-SEM
23. Accurate and traceable dimensional metrology with a reference CD-SEM
24. Monte Carlo modeling of secondary electron imaging in three dimensions
25. Line edge roughness characterization of sub-50nm structures using CD-SAXS: round-robin benchmark results
26. Line Edge Roughness and Cross Sectional Characterization of Sub-50 nm Structures Using Critical Dimension Small Angle X-ray Scattering
27. Advanced metrology needs for nanoelectronics lithography
28. Simulation study of repeatability and bias in the critical dimension scanning electron microscope
29. Influence of focus variation on linewidth measurements
30. Advanced electron microscopy needs for nanotechnology and nanomanufacturing
31. Determination of optimal parameters for CD-SEM measurement of line-edge roughness
32. Dimensional metrology of resist lines using a SEM model-based library approach
33. CD-SEM measurement line edge roughness test patterns for 193 nm lithography
34. New way of handling dimensional measurement results for integrated circuit technology
35. Simulation study of repeatability and bias in the CD-SEM
36. Accurate and traceable dimensional metrology with a reference CD-SEM.
37. Linewidth roughness and cross-sectional measurements of sub-50 nm structures with CD-SAXS and CD-SEM.
38. Line Edge Roughness and Cross Sectional Characterization of Sub-50 nm Structures Using Critical Dimension Small Angle X-ray Scattering.
39. Scanning electron microscope analog of scatterometry
40. Influence of focus variation on linewidth measurements.
41. CD-SEM measurement line-edge roughness test patterns for 193-nm lithography.
42. Edge determination for polycrystalline silicon lines on gate oxide
43. Nanoindentation of polymers: an overview
44. Edge determination for polycrystalline silicon lines on gate oxide.
45. Is a production-level scanning electron microscope linewidth standard possible?
46. Linewidth measurement intercomparison on a BESOI sample.
47. Linewidth measurement intercomparison on a BESOI sample
48. Grating pitch measurements with the molecular measuring machine
49. Toward nanometer accuracy measurements
50. Intercomparison of SEM, AFM, and electrical linewidths
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