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4 results on '"Viazmitinov, Dmitrii V."'

1. Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device

Author

Aghaee, Morteza, Ramirez, Alejandro Alcaraz, Alam, Zulfi, Ali, Rizwan, Andrzejczuk, Mariusz, Antipov, Andrey, Astafev, Mikhail, Barzegar, Amin, Bauer, Bela, Becker, Jonathan, Bhaskar, Umesh Kumar, Bocharov, Alex, Boddapati, Srini, Bohn, David, Bommer, Jouri, Bourdet, Leo, Bousquet, Arnaud, Boutin, Samuel, Casparis, Lucas, Chapman, Benjamin James, Chatoor, Sohail, Christensen, Anna Wulff, Chua, Cassandra, Codd, Patrick, Cole, William, Cooper, Paul, Corsetti, Fabiano, Cui, Ajuan, Dalpasso, Paolo, Dehollain, Juan Pablo, de Lange, Gijs, de Moor, Michiel, Ekefjärd, Andreas, Dandachi, Tareq El, Saldaña, Juan Carlos Estrada, Fallahi, Saeed, Galletti, Luca, Gardner, Geoff, Govender, Deshan, Griggio, Flavio, Grigoryan, Ruben, Grijalva, Sebastian, Gronin, Sergei, Gukelberger, Jan, Hamdast, Marzie, Hamze, Firas, Hansen, Esben Bork, Heedt, Sebastian, Heidarnia, Zahra, Zamorano, Jesús Herranz, Ho, Samantha, Holgaard, Laurens, Hornibrook, John, Indrapiromkul, Jinnapat, Ingerslev, Henrik, Ivancevic, Lovro, Jensen, Thomas, Jhoja, Jaspreet, Jones, Jeffrey, Kalashnikov, Konstantin V., Kallaher, Ray, Kalra, Rachpon, Karimi, Farhad, Karzig, Torsten, King, Evelyn, Kloster, Maren Elisabeth, Knapp, Christina, Kocon, Dariusz, Koski, Jonne, Kostamo, Pasi, Kumar, Mahesh, Laeven, Tom, Larsen, Thorvald, Lee, Jason, Lee, Kyunghoon, Leum, Grant, Li, Kongyi, Lindemann, Tyler, Looij, Matthew, Love, Julie, Lucas, Marijn, Lutchyn, Roman, Madsen, Morten Hannibal, Madulid, Nash, Malmros, Albert, Manfra, Michael, Mantri, Devashish, Markussen, Signe Brynold, Martinez, Esteban, Mattila, Marco, McNeil, Robert, Mei, Antonio B., Mishmash, Ryan V., Mohandas, Gopakumar, Mollgaard, Christian, Morgan, Trevor, Moussa, George, Nayak, Chetan, Nielsen, Jens Hedegaard, Nielsen, Jens Munk, Nielsen, William Hvidtfelt Padkær, Nijholt, Bas, Nystrom, Mike, O'Farrell, Eoin, Ohki, Thomas, Otani, Keita, Wütz, Brian Paquelet, Pauka, Sebastian, Petersson, Karl, Petit, Luca, Pikulin, Dima, Prawiroatmodjo, Guen, Preiss, Frank, Morejon, Eduardo Puchol, Rajpalke, Mohana, Ranta, Craig, Rasmussen, Katrine, Razmadze, David, Reentila, Outi, Reilly, David J., Ren, Yuan, Reneris, Ken, Rouse, Richard, Sadovskyy, Ivan, Sainiemi, Lauri, Sanlorenzo, Irene, Schmidgall, Emma, Sfiligoj, Cristina, Shah, Mustafeez Bashir, Simoes, Kevin, Singh, Shilpi, Sinha, Sarat, Soerensen, Thomas, Sohr, Patrick, Stankevic, Tomas, Stek, Lieuwe, Stuppard, Eric, Suominen, Henri, Suter, Judith, Teicher, Sam, Thiyagarajah, Nivetha, Tholapi, Raj, Thomas, Mason, Toomey, Emily, Tracy, Josh, Turley, Michelle, Upadhyay, Shivendra, Urban, Ivan, Van Hoogdalem, Kevin, Van Woerkom, David J., Viazmitinov, Dmitrii V., Vogel, Dominik, Watson, John, Webster, Alex, Weston, Joseph, Winkler, Georg W., Xu, Di, Yang, Chung Kai, Yucelen, Emrah, Zeisel, Roland, Zheng, Guoji, and Zilke, Justin

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $\mu$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $\mu$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%., Comment: Added data on a second measurement of device A and a measurement of device B, expanded discussion of a trivial scenario. Refs added, author list updated

Published
2024

2. InAs-Al Hybrid Devices Passing the Topological Gap Protocol

Author

Aghaee, Morteza, Akkala, Arun, Alam, Zulfi, Ali, Rizwan, Ramirez, Alejandro Alcaraz, Andrzejczuk, Mariusz, Antipov, Andrey E, Aseev, Pavel, Astafev, Mikhail, Bauer, Bela, Becker, Jonathan, Boddapati, Srini, Boekhout, Frenk, Bommer, Jouri, Hansen, Esben Bork, Bosma, Tom, Bourdet, Leo, Boutin, Samuel, Caroff, Philippe, Casparis, Lucas, Cassidy, Maja, Christensen, Anna Wulf, Clay, Noah, Cole, William S, Corsetti, Fabiano, Cui, Ajuan, Dalampiras, Paschalis, Dokania, Anand, de Lange, Gijs, de Moor, Michiel, Saldaña, Juan Carlos Estrada, Fallahi, Saeed, Fathabad, Zahra Heidarnia, Gamble, John, Gardner, Geoff, Govender, Deshan, Griggio, Flavio, Grigoryan, Ruben, Gronin, Sergei, Gukelberger, Jan, Heedt, Sebastian, Zamorano, Jesús Herranz, Ho, Samantha, Holgaard, Ulrik Laurens, Nielsen, William Hvidtfelt Padkær, Ingerslev, Henrik, Krogstrup, Peter Jeppesen, Johansson, Linda, Jones, Jeffrey, Kallaher, Ray, Karimi, Farhad, Karzig, Torsten, King, Evelyn, Kloster, Maren Elisabeth, Knapp, Christina, Kocon, Dariusz, Koski, Jonne, Kostamo, Pasi, Kumar, Mahesh, Laeven, Tom, Larsen, Thorvald, Li, Kongyi, Lindemann, Tyler, Love, Julie, Lutchyn, Roman, Manfra, Michael, Memisevic, Elvedin, Nayak, Chetan, Nijholt, Bas, Madsen, Morten Hannibal, Markussen, Signe, Martinez, Esteban, McNeil, Robert, Mullally, Andrew, Nielsen, Jens, Nurmohamed, Anne, O'Farrell, Eoin, Otani, Keita, Pauka, Sebastian, Petersson, Karl, Petit, Luca, Pikulin, Dima, Preiss, Frank, Perez, Marina Quintero, Rasmussen, Katrine, Rajpalke, Mohana, Razmadze, Davydas, Reentila, Outi, Reilly, David, Rouse, Richard, Sadovskyy, Ivan, Sainiemi, Lauri, Schreppler, Sydney, Sidorkin, Vadim, Singh, Amrita, Singh, Shilpi, Sinha, Sarat, Sohr, Patrick, Stankevič, Tomaš, Stek, Lieuwe, Suominen, Henri, Suter, Judith, Svidenko, Vicky, Teicher, Sam, Temuerhan, Mine, Thiyagarajah, Nivetha, Tholapi, Raj, Thomas, Mason, Toomey, Emily, Upadhyay, Shivendra, Urban, Ivan, Vaitiekėnas, Saulius, Van Hoogdalem, Kevin, Viazmitinov, Dmitrii V., Waddy, Steven, Van Woerkom, David, Vogel, Dominik, Watson, John, Weston, Joseph, Winkler, Georg W., Yang, Chung Kai, Yau, Sean, Yi, Daniel, Yucelen, Emrah, Webster, Alex, Zeisel, Roland, and Zhao, Ruichen

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $\mu$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes., Comment: Final version

Published
2022
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3. Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth

Author

Viazmitinov, Dmitrii V., Berdnikov, Yury, Kadkhodazadeh, Shima, Dragunova, Anna, Sibirev, Nickolay, Kryzhanovskaya, Natalia, Radko, Ilya, Huck, Alexander, Yvind, Kresten, and Semenova, Elizaveta

Subjects
Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface. The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our x-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations. Our method constitutes a new approach for the monolithic integration of active III-V material into Si platform and opens up new opportunities in active Si photonics.

Published
2020

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