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1. Hydrogenated amorphous silicon detectors for particle detection, beam flux monitoring and dosimetry in high-dose radiation environment

Author

Menichelli, Mauro, Boscardin, Maurizio, Crivellari, Michele, Davis, Jeremy, Dunand, Silvan, Fanò, Livio, Morozzi, Arianna, Moscatelli, Francesco, Movileanu-Ionica, Maria, Passeri, Daniele, Petasecca, Marco, Piccini, Mauro, Rossi, Alessandro, Scorzoni, Andrea, Servoli, Leonello, Verzellesi, Giovanni, and Wyrsch, Nicolas

Subjects
Physics - Instrumentation and Detectors
Abstract

Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode structures; the thickness of these detectors ranged from 1 to 50 micron. However MIP detection using planar structures has always been problematic due to the poor S/N ratio related to the high leakage current at high depletion voltage and the low charge collection efficiency. The usage of 3D detector architecture can be beneficial for the possibility to reduce inter-electrode distance and increase the thickness of the detector for larger charge generation compared to planar structures. Such a detector can be used for future hadron colliders for its radiation resistance and also for X-ray imaging. Furthermore the possibility of a-Si:H deposition on flexible materials (like kapton) can be exploited to build flexible and thin beam flux measurement detectors and x-ray dosimeters., Comment: 10 pages 5 figures, 1 table

Published
2020
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3. Le funzioni dell’università come attore di sviluppo. Il caso delle città universitarie di Modena e Reggio Emilia.

Author

Marchi, Gianluca and Verzellesi, Giovanni

Abstract

Copyright of Regional Studies & Local Development is the property of Padova University Press and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2024
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4. Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Author

Zagni, Nicolò, primary, Fregolent, Manuel, additional, Fiol, Andrea Del, additional, Favero, Davide, additional, Bergamin, Francesco, additional, Verzellesi, Giovanni, additional, Santi, Carlo De, additional, Meneghesso, Gaudenzio, additional, Zanoni, Enrico, additional, Huber, Christian, additional, Meneghini, Matteo, additional, and Pavan, Paolo, additional

Published
2024
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5. Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors

Author

Zagni, Nicolò, primary, Fregolent, Manuel, additional, Verzellesi, Giovanni, additional, Marcuzzi, Alberto, additional, De Santi, Carlo, additional, Meneghesso, Gaudenzio, additional, Zanoni, Enrico, additional, Treidel, Eldad Bahat, additional, Brusaterra, Enrico, additional, Brunner, Frank, additional, Hilt, Oliver, additional, Meneghini, Matteo, additional, and Pavan, Paolo, additional

Published
2024
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6. On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers

Author

Cioni, Marcello, Chini, Alessandro, Zagni, Nicolo, Verzellesi, Giovanni, Giorgino, Giovanni, Cappellini, Giacomo, Miccoli, Cristina, Toulon, Gaetan, Wakrim, Tariq, Eloisa Castagna, Maria, Constant, Aurore, and Iucolano, Ferdinando

Abstract

In this letter, we investigate the effect of Carbon (C) doping concentration on dynamic RON, vertical leakage and Capacitance-Voltage (C-V) characteristics of p-GaN gate High Electron Mobility Transistors (HEMTs). Measurements performed on state-of-the-art samples show that further increasing C-doping concentration in the GaN buffer above $10^{{19}}$ cm $^{-{3}}$ yields a reduced dynamic-RON degradation, in contrast with the behavior reported in the literature for lower C-doping concentrations. This is confirmed by a complete data set showing a consistent increase in the vertical leakage and in the output capacitance while increasing the C doping, stemming from a less insulating buffer and a reduced 2-DEG depletion, respectively. These observations can be attributed to an increased incorporation of compensating donors leading to a reduction of the net acceptors as the C doping concentration is raised above $10^{{19}}$ cm $^{-{3}}$ .

Published
2024
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10. Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

Author

Zagni, Nicolo, Fregolent, Manuel, Verzellesi, Giovanni, Bergamin, Francesco, Favero, Davide, De Santi, Carlo, Meneghesso, Gaudenzio, Zanoni, Enrico, Huber, Christian, Meneghini, Matteo, and Pavan, Paolo

Abstract

We analyzed the threshold-voltage dynamic instabilities induced by off-state stress in pseudo-vertical GaN-on-Si Trench mosfets (TMOS). Extensive measurements revealed that off-state stress experiments induce a progressive increase of threshold voltage (VT), that is fully recoverable only after high-temperature cycles, so that it can appear as permanent degradation at room temperature. VT increase is found to be strongly affected by drain bias and negligibly influenced by gate bias (below threshold). Activation energy (EA) extracted from high-temperature VT recovery experiments was determined to be ≈1 eV. We further characterized pseudo-vertical p–n junction diodes fabricated onto the same wafer as the TMOS's by means of capacitance isothermal spectroscopy. This experiment revealed depletion capacitance (CDEP) instabilities with the same EA as that characterizing the VT instability, leading to the conclusion that trap states present in the epitaxy are the cause of both observations. Numerical device simulations guided the physical interpretation of the observed phenomena, i.e., donor traps at 1 eV from the conduction band and localized in the p-layer lead to both VT and CDEP instabilities in the TMOS and in the p–n diode, respectively, by dynamically modulating the effective p-type doping density in the former and the effective depletion layer width in the latter.

Published
2024
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14. Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs

Author

Zagni, Nicolo, Verzellesi, Giovanni, Bertacchini, Alessandro, Borgarino, Mattia, Iucolano, Ferdinando, and Chini, Alessandro

Abstract

Dynamic on-resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON}}{)}$ affects the stability of p-GaN power HEMTs. In Schottky-gate HEMTs, dynamic ${R}_{ \mathrm{\scriptscriptstyle ON}}$ is associated to either electron trapping at device surface or dynamic effects occurring in the buffer. However, in p-GaN HEMTs the floating p-GaN region can have an additional role on dynamic ${R}_{ \mathrm{\scriptscriptstyle ON}}$ , due to removal/injection of holes from/into the barrier with relatively long time constants, which can be erroneously interpreted as a reliability issue. In this letter, we present a model to explain the dynamic ${R}_{ \mathrm{\scriptscriptstyle ON}}$ due to surface-related effects in p-GaN power HEMTs. The model, called ‘hole virtual gate’, attributes the experimentally observed ${R}_{ \mathrm{\scriptscriptstyle ON}}$ instability due to negative/positive gate bias stress (NGS/PGS) to the charging/discharging of surface traps in the AlGaN barrier by the removal/injection of holes through the gate metal/p-GaN Schottky junction. We verify the validity of the model by means of calibrated numerical simulations, that correlate the activation energy ${E}_{\text {A}}~\approx ~0.4$ eV of both ${R}_{ \mathrm{\scriptscriptstyle ON}}$ increase/decrease during NGS/PGS to the thermal ionization energy of traps in the barrier.

Published
2024
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15. Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors

Author

Zagni, Nicolo, Fregolent, Manuel, Verzellesi, Giovanni, Marcuzzi, Alberto, De Santi, Carlo, Meneghesso, Gaudenzio, Zanoni, Enrico, Treidel, Eldad Bahat, Brusaterra, Enrico, Brunner, Frank, Hilt, Oliver, Meneghini, Matteo, and Pavan, Paolo

Abstract

In this article, we present an analysis of the correlation between interface traps (ITs) and border traps (BTs) on distinctive features of ${C}$ – ${V}$ curves in vertical Al2O3/gallium-nitride (GaN) MOS capacitors. First, pulsed ${C}$ – ${V}$ curves were characterized during the application of quiescent gate bias stresses of different magnitudes and signs. This characterization revealed four main distinctive features: 1) rightward rigid shift; 2) leftward rigid shift; 3) decrease of the $\Delta {C}$ – $\Delta {V}$ slope; and 4) formation of a hump in a gate bias range before the accumulation of electrons at the oxide/semiconductor interface. By means of a combined experimental/simulation analysis, these features were univocally attributed to specific ITs or BTs in the overall trap distribution. The simulation-aided analysis enhances the physical understanding of the ${C}$ – ${V}$ curves features and increases the dependability of the adopted IT measurement technique, allowing for a more rapid process optimization and device technology development.

Published
2024
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16. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability

Author

Zanoni, Enrico, De Santi, Carlo, Gao, Zhan, Buffolo, Matteo, Fornasier, Mirko, Saro, Marco, De Pieri, Francesco, Rampazzo, Fabiana, Meneghesso, Gaudenzio, Meneghini, Matteo, Zagni, Nicolo, Chini, Alessandro, and Verzellesi, Giovanni

Abstract

Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-wave power amplifiers requires gate length scaling below 150 nm: in order to control short-channel effects, the gate-to-channel distance must be decreased, and the device epitaxial structure has to be completely redesigned. A high 2-D electron gas (2DEG) carrier density can be preserved even with a very thin top barrier layer by substituting AlGaN with AlN, InAl(Ga)N, or ScAlN. Moreover, to prevent interaction of hot electrons with compensating impurities and defects in the doped GaN buffer, the latter has to be separated from the channel by a back barrier. Other device designs consist in adopting a graded channel (which controls the electric field) or to adopt nitrogen-polar (N-polar) GaN growth (which decreases the distance between gate and channel, thus attenuating short-channel effects). The aim of this article is to review the various options for controlling short-channel effects, improve off-state characteristics, and reduce drain–source leakage current. Advantages and potential drawbacks of each proposed solution are analyzed in terms of current collapse (CC), dispersion effects, and reliability.

Published
2024
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17. GaN-based power devices: Physics, reliability, and perspectives.

Author

Meneghini, Matteo, De Santi, Carlo, Abid, Idriss, Buffolo, Matteo, Cioni, Marcello, Khadar, Riyaz Abdul, Nela, Luca, Zagni, Nicolò, Chini, Alessandro, Medjdoub, Farid, Meneghesso, Gaudenzio, Verzellesi, Giovanni, Zanoni, Enrico, and Matioli, Elison

Subjects
TWO-dimensional electron gas, GALLIUM nitride, PHYSICS, NANOWIRES, BAND gaps, MECHANICAL properties of condensed matter, MODULATION-doped field-effect transistors
Abstract

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity, thus representing an excellent material for the fabrication of high-speed/high-voltage components. The presence of spontaneous and piezoelectric polarization allows us to create a two-dimensional electron gas, with high mobility and large channel density, in the absence of any doping, thanks to the use of AlGaN/GaN heterostructures. This contributes to minimize resistive losses; at the same time, for GaN transistors, switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic integration enable a high-frequency operation, with consequent advantages in terms of miniaturization. For high power/high-voltage operation, vertical device architectures are being proposed and investigated, and three-dimensional structures—fin-shaped, trench-structured, nanowire-based—are demonstrating great potential. Contrary to Si, GaN is a relatively young material: trapping and degradation processes must be understood and described in detail, with the aim of optimizing device stability and reliability. This Tutorial describes the physics, technology, and reliability of GaN-based power devices: in the first part of the article, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field. The second part of the paper focuses on trapping and reliability aspects: the physical origin of traps in GaN and the main degradation mechanisms are discussed in detail. The wide set of referenced papers and the insight into the most relevant aspects gives the reader a comprehensive overview on the present and next-generation GaN electronics. [ABSTRACT FROM AUTHOR]

Published
2021
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18. III-N optoelectronic devices: understanding the physics of electro-optical degradation

Author

Meneghini, Matteo, primary, Roccato, Nicola, additional, Piva, Francesco, additional, De Santi, Carlo, additional, Buffolo, Matteo, additional, Haller, Camille, additional, Carlin, Jean-Francois, additional, Grandjean, Nicolas, additional, Tibaldi, Alberto, additional, Bertazzi, Francesco, additional, Goano, Michele, additional, Verzellesi, Giovanni, additional, Wernicke, Tim, additional, Kneissl, Michael, additional, Meneghesso, Gaudenzio, additional, and Zanoni, Enrico, additional

Published
2023
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19. Gate-Bias Induced R ON Instability in p-GaN Power HEMTs

Author

Chini, Alessandro, primary, Zagni, Nicolò, additional, Verzellesi, Giovanni, additional, Cioni, Marcello, additional, Giorgino, Giovanni, additional, Nicotra, Maria Concetta, additional, Castagna, Maria Eloisa, additional, and Iucolano, Ferdinando, additional

Published
2023
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20. Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm Algan/Gan Hemts for Power RF Applications

Author

Zagni, Nicolò, primary, Gao, Veronica Zhan, additional, Verzellesi, Giovanni, additional, Chini, Alessandro, additional, Pantellini, Alessio, additional, Natali, Marco, additional, Lucibello, Andrea, additional, Latessa, Luca, additional, Lanzieri, Claudio, additional, Santi, Carlo De, additional, Meneghini, Matteo, additional, Meneghesso, Gaudenzio, additional, and Zanoni, Enrico, additional

Published
2023
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21. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability

Author

Zanoni, Enrico, primary, Santi, Carlo De, additional, Gao, Zhan, additional, Buffolo, Matteo, additional, Fornasier, Mirko, additional, Saro, Marco, additional, Pieri, Francesco De, additional, Rampazzo, Fabiana, additional, Meneghesso, Gaudenzio, additional, Meneghini, Matteo, additional, Zagni, Nicolò, additional, Chini, Alessandro, additional, and Verzellesi, Giovanni, additional

Published
2023
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23. List of contributors

Author

Ajay, Akhil, primary, Arefin, Nazmul, additional, Bertazzi, Francesco, additional, Bullough, John D., additional, Charlton, Martin D.B., additional, Chen, Chi-Feng, additional, Chen, Tzung-Te, additional, Cheung, Yuk Fai, additional, Chiu, Ching-Hsueh, additional, Choi, Hoi Wai, additional, Chou, Pei-Ting, additional, Dai, Chun-Fan, additional, De Santi, Carlo, additional, Fu, Houqiang, additional, Fu, Han-Kuei, additional, Goano, Michele, additional, Hirayama, Hideki, additional, Horng, Ray-Hua, additional, Hu, Run, additional, Huang, C.-Y., additional, Huang, JianJang, additional, Ikenaga, Tadakazu, additional, Islam, S.M., additional, Jena, D., additional, Kane, Matthew H., additional, Kotsar, Yulia, additional, Kotschenreuther, Richard, additional, Kuo, Hao-Chung, additional, Lai, Chun-Feng, additional, Lan, Yu-Pin, additional, Lee, Wonseok, additional, Li, Zhen-Yu, additional, Lin, Chien-Chung, additional, Lin, Chia-Feng, additional, Lin, Da-Wei, additional, Luo, Xiaobing, additional, Ma, Zetao, additional, Matsumoto, Koh, additional, Meneghesso, Gaudenzio, additional, Meneghini, Matteo, additional, Mishima, Akira, additional, Monroy, Eva, additional, Piao, Guanxi, additional, Protasenko, V., additional, Ryou, Jae-Hyun, additional, Speck, James, additional, Svilainis, Linas, additional, Tabuchi, Toshiya, additional, Tibaldi, Alberto, additional, Tokunaga, Hiroki, additional, Tomita, Yuji, additional, Ubukata, Akinori, additional, Vallone, Marco, additional, Verma, A., additional, Verma, J., additional, Verzellesi, Giovanni, additional, Wang, Chien-Ping, additional, Wu, Yuh-Renn, additional, Wu, Zhanchao, additional, Wuu, Dong-Sing, additional, Xia, Zhiguo, additional, Yano, Yoshiki, additional, Yeh, Wen-Yung, additional, Zanoni, Enrico, additional, Zhao, Yuji, additional, and Zhuang, Qiandong, additional

Published
2018
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24. Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect

Author

Gao, Zhan, De Santi, Carlo, Rampazzo, Fabiana, Saro, Marco, Fornasier, Mirko, Meneghesso, Gaudenzio, Meneghini, Matteo, Chini, Alessandro, Verzellesi, Giovanni, and Zanoni, Enrico

Abstract

The kink effect in field-effect transistors (FETs) consists in a sudden increase in drain current, ${I}_{\text {D}}$ , during a drain voltage sweep and leading to a higher ${I}_{\text {D}}$ saturation value. We report new experimental data concerning the dynamic behavior of the “kink” in AlGaN/GaN HEMTs and correlate them with deep levels. The results demonstrate the role of the Poole–Frenkel effect in determining the occurrence of the kink and identify the experimental conditions that make it observable.

Published
2023
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26. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results

Author

Zanoni, Enrico, primary, Rampazzo, Fabiana, additional, De Santi, Carlo, additional, Gao, Zhan, additional, Sharma, Chandan, additional, Modolo, Nicola, additional, Verzellesi, Giovanni, additional, Chini, Alessandro, additional, Meneghesso, Gaudenzio, additional, and Meneghini, Matteo, additional

Published
2022
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28. High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices

Author

Peverini, Francesca, primary, Bizzarri, Marco, additional, Boscardin, Maurizio, additional, Calcagnile, Lucio, additional, Caprai, Mirco, additional, Caricato, Anna Paola, additional, Cirrone, Giuseppe Antonio Pablo, additional, Crivellari, Michele, additional, Cuttone, Giacomo, additional, Dunand, Sylvain, additional, Fanò, Livio, additional, Gianfelici, Benedetta, additional, Hammad, Omar, additional, Ionica, Maria, additional, Kanxheri, Keida, additional, Large, Matthew, additional, Maruccio, Giuseppe, additional, Menichelli, Mauro, additional, Monteduro, Anna Grazia, additional, Moscatelli, Francesco, additional, Morozzi, Arianna, additional, Pallotta, Stefania, additional, Papi, Andrea, additional, Passeri, Daniele, additional, Petasecca, Marco, additional, Petringa, Giada, additional, Pis, Igor, additional, Quarta, Gianluca, additional, Rizzato, Silvia, additional, Rossi, Alessandro, additional, Rossi, Giulia, additional, Scorzoni, Andrea, additional, Soncini, Cristian, additional, Servoli, Leonello, additional, Tacchi, Silvia, additional, Talamonti, Cinzia, additional, Verzellesi, Giovanni, additional, Wyrsch, Nicolas, additional, Zema, Nicola, additional, and Pedio, Maddalena, additional

Published
2022
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29. Displacement damage in Hydrogenated Amorphous Silicon p-i-n diodes and charge selective contacts detectors.

Author

Menichelli, Mauro, primary, Bizzarri, Marco, primary, Boscardin, Maurizio, primary, Calcagnile, Lucio, primary, Caprai, Mirco, primary, Caricato, Anna Paola, primary, Pablo, Giuseppe Antonio, primary, Crivellari, Michele, primary, Cupparo, Ilaria, primary, Cuttone, Giacomo, primary, Dunand, Sylvain, primary, Fanò, Livio, primary, Gianfelici, Benedetta, primary, Hammad, Omar, primary, Movileanu-Ionica, Maria, primary, kanxheri, keida, primary, Large, Matthew, primary, Maruccio, Giuseppe, primary, Monteduro, Anna Grazia, primary, Moscatelli, Francesco, primary, Morozzi, Arianna, primary, Papi, Andrea, primary, Passeri, Daniele, primary, Pedio, Maddalena, primary, Petasecca, Marco, primary, Petringa, Giada, primary, Peverini, Francesca, primary, Quarta, Gianluca, primary, Rizzato, Silvia, primary, Rossi, Alessandro, primary, rossi, giulia, primary, Scorzoni, Andrea, primary, Servoli, Leonello, primary, Talamonti, Cinzia, primary, Verzellesi, Giovanni, primary, and Wyrsch, Nicolas, primary

Published
2022
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31. Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers

Author

De Santi, Carlo, primary, Zanoni, Enrico, additional, Meneghini, Matteo, additional, Meneghesso, Gaudenzio, additional, Rampazzo, Fabiana, additional, Gao, Veronica Zhan, additional, Sharma, Chandan, additional, Chiocchetta, Francesca, additional, Verzellesi, Giovanni, additional, Chini, Alessandro, additional, Cioni, Marcello, additional, Zagni, Nicolò, additional, Lanzieri, Claudio, additional, Pantellini, Alessio, additional, Peroni, Marco, additional, and Latessa, Luca, additional

Published
2022
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32. Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Author

Roccato, Nicola, primary, Piva, Francesco, additional, De Santi, Carlo, additional, Brescancin, Riccardo, additional, Mukherjee, Kalparupa, additional, Buffolo, Matteo, additional, Haller, Camille, additional, Carlin, Jean-Francois, additional, Grandjean, Nicolas, additional, Vallone, Marco, additional, Tibaldi, Alberto, additional, Bertazzi, Francesco, additional, Goano, Michele, additional, Verzellesi, Giovanni, additional, Meneghesso, Gaudenzio, additional, Zanoni, Enrico, additional, and Meneghini, Matteo, additional

Published
2022
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33. Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Author

Buffolo, Matteo, primary, Roccato, Nicola, additional, Piva, Francesco, additional, De Santi, Carlo, additional, Brescancin, Riccardo, additional, Casu, Claudia, additional, Caria, Alessandro, additional, Mukherjee, Kalparupa, additional, Haller, Camille, additional, Carlin, Jean Francois, additional, Grandjean, Nicolas, additional, Vallone, Marco, additional, Tibaldi, Alberto, additional, Bertazzi, Francesco, additional, Goano, Michele, additional, Verzellesi, Giovanni, additional, Mosca, Mauro, additional, Meneghesso, Gaudenzio, additional, Zanoni, Enrico, additional, and Meneghini, Matteo, additional

Published
2022
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37. Fabrication of a Hydrogenated Amorphous Silicon Detector in 3-D Geometry and Preliminary Test on Planar Prototypes

Author

Menichelli, Mauro, primary, Bizzarri, Marco, additional, Boscardin, Maurizio, additional, Caprai, Mirco, additional, Caricato, Anna Paola, additional, Cirrone, Giuseppe Antonio Pablo, additional, Crivellari, Michele, additional, Cupparo, Ilaria, additional, Cuttone, Giacomo, additional, Dunand, Silvain, additional, Fanò, Livio, additional, Alì, Omar Hammad, additional, Ionica, Maria, additional, Kanxheri, Keida, additional, Large, Matthew, additional, Maruccio, Giuseppe, additional, Monteduro, Anna Grazia, additional, Moscatelli, Francesco, additional, Morozzi, Arianna, additional, Papi, Andrea, additional, Passeri, Daniele, additional, Petasecca, Marco, additional, Rizzato, Silvia, additional, Rossi, Alessandro, additional, Scorzoni, Andrea, additional, Servoli, Leonello, additional, Talamonti, Cinzia, additional, Verzellesi, Giovanni, additional, and Wyrsch, Nicolas, additional

Published
2021
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39. Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Author

Roccato, Nicola, primary, Piva, Francesco, additional, Santi, Carlo De, additional, Brescancin, Riccardo, additional, Mukherjee, Kalparupa, additional, Buffolo, Matteo, additional, Haller, Camille, additional, Carlin, Jean-François, additional, Grandjean, Nicolas, additional, Vallone, Marco, additional, Tibaldi, Alberto, additional, Bertazzi, Francesco, additional, Goano, Michele, additional, Verzellesi, Giovanni, additional, Meneghesso, Gaudenzio, additional, Zanoni, Enrico, additional, and Meneghini, Matteo, additional

Published
2021
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40. Gate-Bias Induced RON Instability in p-GaN Power HEMTs

Author

Chini, Alessandro, Zagni, Nicolo, Verzellesi, Giovanni, Cioni, Marcello, Giorgino, Giovanni, Nicotra, Maria Concetta, Castagna, Maria Eloisa, and Iucolano, Ferdinando

Abstract

In this letter, we investigate the on-resistance (RON) instability in p-GaN power HEMTs induced by a positive or negative gate bias ( ${V}_{\text {GB}}$ ), following the application of a quasi-static initialization voltage ( ${V}_{\text {GP}}$ ) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90–135 °C range. By monitoring the resulting drain current transients, the activation energy as well as time constants of the processes are characterized. Not trivially, both RON increase/decrease were found to be thermally activated and with same activation energy. We attribute the thermal activation of both (RON) increase/decrease to the charging/discharging of hole traps present in the AlGaN barrier in the region below the gate.

Published
2023
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41. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon.

Author

Pradeepkumar, Aiswarya, Zielinski, Marcin, Bosi, Matteo, Verzellesi, Giovanni, Gaskill, D. Kurt, and Iacopi, Francesca

Subjects
SILICON carbide, THIN films, SUBSTRATES (Materials science), ELECTRICAL resistivity, HETEROSTRUCTURES, THERMAL expansion, BAND gaps
Abstract

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures. [ABSTRACT FROM AUTHOR]

Published
2018
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46. Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs

Author

Faqir, Mustapha, Verzellesi, Giovanni, Meneghesso, Gaudenzio, Zanoni, Enrico, and Fantini, Fausto

Subjects
Gallium compounds -- Electric properties, Gate arrays -- Analysis, High-electron-mobility transistors -- Evaluation, Field programmable gate array, Business, Electronics, Electronics and electrical industries
Abstract

High-electric-field degradation phenomena in GaN-capped AlGaN/GaN high-electron mobility transistors (HEMTs) are examined. Findings reveal the amplification of gate-lag effects and a decline in the reverse gate leakage current.

Published
2008

48. Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs

Author

Meneghesso, Gaudenzio, Rampazzo, Fabiana, Kordos, Peter, Verzellesi, Giovanni, and Zanoni, Enrico

Subjects
Gallium compounds -- Atomic properties, Gallium compounds -- Electric properties, Electric fields -- Research, Electron mobility -- Research, Business, Electronics, Electronics and electrical industries
Abstract

Long-term ON-state and OFF-state high-electric-field stress results are presented for unpassivated GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) on SiC substrates. Devices show minimal current-collapse effect prior to high-electric-field stress, despite the fact that they are not passivated due to the thin GaN cap layer.

Published
2006

50. Light sensitivity of current DTLS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs

Author

Verzellesi, Giovanni, Basile, Alberto F., Cavallini, Anna, Castaldini, Antonio, Chini, Alessandro, and Canali, Claudio

Subjects
Field-effect transistors -- Design and construction, Gallium arsenide semiconductors -- Design and construction, Aluminum compounds -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

The light sensitivity of current deep-level transient spectroscopy (I-DLTS) is analyzed. The analysis is carried out with the aim of gaining insight about the physics of surface-trap related dc-RF dispersion effects in AlGaAs-GaAs heterostructure field-effective transistors.

Published
2005

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