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Light sensitivity of current DTLS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs

Authors :
Verzellesi, Giovanni
Basile, Alberto F.
Cavallini, Anna
Castaldini, Antonio
Chini, Alessandro
Canali, Claudio
Source :
IEEE Transactions on Electron Devices. April, 2005, Vol. 52 Issue 4, p594, 9 p.
Publication Year :
2005

Abstract

The light sensitivity of current deep-level transient spectroscopy (I-DLTS) is analyzed. The analysis is carried out with the aim of gaining insight about the physics of surface-trap related dc-RF dispersion effects in AlGaAs-GaAs heterostructure field-effective transistors.

Details

Language :
English
ISSN :
00189383
Volume :
52
Issue :
4
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.141989554