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6. Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass

7. Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

10. Electronic spectrum of UO2(2+) and [UO2Cl4]2- calculated with time-dependent density functional theory

11. Integration of a k=2.3 spin-on polymer for the sub-28nm technology node using EUV lithography

13. Implementation of an industry compliant, 5×50μm, via-middle TSV technology on 300mm wafers

16. Influence of varying porogen loads and different UV cures on low-kappa film characteristics.

17. Electronic spectrum of UO2(2+) and [UO2Cl4]2- calculated with time-dependent density functional theory.

18. Electronic spectra of uranyl chloride complexes in acetone: a CASSCF/CASPT2 investigation.

19. Electronic structure and spectrum of UO2 2+ and UO2Cl4 2-.

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