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Introduction. The relevance of designing the event-positional methodology of personalized additional professional education of teachers in the conditions of a pedagogical university is determined by the following aspects of the modern educational situation: the practical need for the development of additional professional programs of a new type; the need to overcome the backlog of requirements for the modernization of the main professional educational programs for future teachers from the new requirements of professional standards to their professional activities in an educational organization; the growing importance of the idea of education as a national priority; the demand for new norms of positional and professional self-determination of the teacher.Aim. The purpose of the article is to identify the methodological vector of the deployment of special theoretical and design-scientific works on the creation of a model for the formation and implementation of a personalized strategy for the development of a teacher in the process of additional professional education and the cultivation of a special culture of new pedagogical professionalism, which is determined by the presence of abilities for self-education, and thereby for self-development.Materials and Methods. The basis of the scientific search was the synthesis of fundamental provisions on a personalized model of the development of a teacher's reflexive abilities for self-transformation; on new goal-setting, which provides an opportunity for a teacher to learn how to design an educational situation in the dynamics of its development, combining elements of theory and practice to obtain a holistic, new knowledge; on the development of resource anthropological potential and development management; about new andragogic formats and technologies for creating professional communities and managing the personal development of teachers.Results. A thesaurus of event-positional methodology and a methodological scheme for building a new practice of continuous advanced pedagogical education have been developed, acting as a normative-prognostic and practice-oriented basis and a value- meanings reference point for personalized additional professional education of teachers. The trial implementation of the developed methodological scheme within the framework of scientific and methodological support of the activities of project teams of educational organizations - co-executors of the network project of training mentors for the development of the federal innovation platform of the Ministry of Science and Higher Education allowed us to establish the fundamental laws of positional self-determination as an educational result of managing the personalized development of teachers in conditions of additional professional education.Discussion and Conclusions. The scientific novelty of the research results is characterized by its focus on creating a prospective model of personalized additional professional education, the principles, conditions and mechanisms of which are directly focused on the inclusion of teachers in the processes of self-education and self-development with the help of targeted design of productive action technology that determines the mechanisms of activity development and assignment of norms of self-realization and the construction of a new educational reality, in which the person himself is both the subject and the object of transformations and transformations. The event-positional methodology makes it possible to build a unified, continuous and variable system of targeted additional professional education in the conditions of a pedagogical university on the basis of personalized educational tracks designed taking into account the specific needs of a pedagogical worker in the continuous updating of their professional knowledge and the acquisition of new professional skills determined through diagnostic procedures, based on the priority of the practiceoriented (applied) component of the educational process and the use of the possibilities of the digital educational environment.

The paper presents a method for manufacturing mechanically strong sputtering composite targets containing the phase of the Co2FeSi or Co2MnSi Heusler alloy of the stoichiometric composition, which can be used for fabrication of spin electronic devices by high-frequency magnetron deposition and pulsed laser deposition of thin films.

The electron transport properties of nanosized CoSi alloy layers deposited at a lowered temperature (350°C) from laser plasma onto single-crystalline gallium arsenide have been studied. An asymmetry of the current-voltage characteristic (CVC) in the longitudinal current transport in such layers has been found, which indicates the spin polarization of charge carriers, and a substantial (up to 18%) nonlinearity and a hysteresis (up to 4%) have been revealed both at room temperature and at 77 K for comparatively low current densities (up to 5 × 104 A/cm2). In repeated cycles of CVC measurements at 77 K, irreversible changes in the properties of the layers have been observed.

Experimental data obtained in the study of transverse current transport in a number of nanosized grained or similar media, such as porous silicon layers, anodic silicon oxide layers, and silicon nitride layers prepared by ion implantation of nitrogen into silicon, have been analyzed within the theory of discrete tunneling. It has been demonstrated that the measurements of current-voltage characteristics of diode structures with dielectric interlayers and embedded grains make it possible to obtain useful information on the character and sizes of grains or quantum dots in the nanosized grained medium. Amorphous dielectrics can be considered a grained medium with nanosized composition fluctuations. The current-voltage characteristics of real structures are determined by both the current nonlinearity associated with the charge carrier injection and the field nonlinearity caused by the Coulomb blockade of tunneling.

The photoluminescence and electron spin resonance phenomena are studied at room temperature for pyrolytic silicon nitride films irradiated with argon ions or molecular nitrogen ions and annealed at temperatures in the range 500–1100°C. The absorption spectrum suggests that the broad photoluminescence band at 400–600 nm is due to electron transitions between the band tails. The low-dose irradiation with argon ions slightly reduces the photoluminescence intensity, whereas the high-dose irradiation followed by annealing at 800–900°C can induce a more than twofold increase in the intensity. At the same time, irradiation with nitrogen ions profoundly suppresses the integrated photoluminescence intensity that decreases by more than an order of magnitude. A correlation between the changes in the photoluminescence intensity and the amplitude of the ESR spectra on annealing of the silicon nitride films is observed.

Transmission electron microscopy, infrared spectroscopy, and the measurements of current-voltage characteristics and capacitance were used to study the influence of heat treatment and the long-range effect of irradiation of the rear side of an Si wafer with Ar, Ne, and Si ions on the state of an SixNy layer synthesized at the front side of this wafer. It is ascertained that the argon-ion bombardment of the wafer heated to 500°C is the most effective method for the formation of insulating silicon-nitride layers. The fact that the properties of SixNy layers are scarcely affected by irradiation with neon and silicon ions is consistent with the previously suggested model of a spontaneous-acoustic mechanism of the long-range effect produced by irradiation of silicon with argon ions.

We studied the nature of the effect of medium-energy ion implantation on the defect system of a crystal target over distances exceeding by three to four orders of magnitude the average projected range of ions in the target material. Recently, we discovered an especially strong manifestation of this long-range effect in crystal targets: argon ion bombardment stimulated the formation of a Si3N4 phase in nitrogen-saturated layers of a silicon wafer, the effect being observed at a distance of up to 600 μm away from the ion stopping zone. An analysis of changes in the electrical and optical properties of the nitrogen-saturated layer depending on the argon ion dose, in comparison to the morphology development on the ion-irradiated silicon surface, suggests that sufficiently effective pulsed sources of hypersonic (in the initial propagation stage) shock waves appear in the Ar+ ion stopping zone. These shock waves arise as a result of the jumplike formation and evolution of a network of dislocation loops and argon blisters, accompanied by explosions of the blisters. These processes probably proceed in a self-synchronized or spontaneous manner. Argon in the blisters occurs at T = 773 K in a solid state under a pressure of 4.5×109 Pa, the blister energy reaching up to 5×108 eV. Estimates show that the synchronized explosions of blisters in the region of a nitrogen-saturated layer at the rear side of a 600-μm-thick silicon wafer may produce a peak pressure at the wave front exceeding 108 Pa, which is sufficient to cause the experimentally observed changes.