Search

Your search keyword '"V. J. Raposo"' showing total 2 results
Start Over Author "V. J. Raposo"
2 results on '"V. J. Raposo"'

1. Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Author

V. J. Raposo, Christophe Gaquiere, E. Perez-Martin, Tomas Gonzalez, Ignacio Iniguez-de-la-Torre, D. Vaquero, Javier Mateos, H. Sanchez-Martin, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Spanish MINECO, FEDEREuropean Commission [SA254P18, TEC2017-83910-R], Junta de Castilla y LeonJunta de Castilla y Leon, and Ministry of Science and Innovation (Ministry of Universities)

Subjects
Imagination, Materials science, microwave detection, media_common.quotation_subject, Bioengineering, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, 7. Clean energy, Impedance measurements, GaN, Responsivity, [SPI]Engineering Sciences [physics], General Materials Science, Electrical and Electronic Engineering, Self-switching diode, Trapping effects, Electrical impedance, Diode, media_common, business.industry, Mechanical Engineering, Relaxation (NMR), impedance measurements, General Chemistry, Atmospheric temperature range, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Mechanics of Materials, Microwave detection, Optoelectronics, trapping effects, 0210 nano-technology, business, Microwave, Voltage
Abstract

[EN]The zero-bias microwave detection capability of self-switching diodes (SSDs) based on AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured responsivity shows an anomalous enhancement at low temperature, while the detected voltage exhibits a roll-off in frequency, which can be attributed to the presence of surface and bulk traps. To gain a deep insight into this behavior, a systematic DC and AC characterization of the diodes has been carried out in the mentioned temperature range. DC results confirm the existence of traps and AC measurements allow us to identify their properties. In particular, impedance studies enable to distinguish two types of traps: at the lateral surfaces of the channel, with a wide spread of relaxation times, and in the bulk., Spanish MINECO and FEDER through project TEC2017-83910-R and the Junta de Castilla y León and FEDER through project SA254P18.

Published
2020

2. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

Author

Javier Mateos, V. J. Raposo, E. Perez-Martin, Christophe Gaquiere, H. Sanchez-Martin, Tomas Gonzalez, D. Vaquero, Ignacio Iniguez-de-la-Torre, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Spanish MINECO [TEC2017-83910-R], FEDEREuropean Commission [TEC2017-83910-R, SA254P18], Junta de Castilla y LeonJunta de Castilla y Leon [SA254P18], and Ministry of Science and Innovation (Ministry of Universities)

Subjects
Materials science, 02 engineering and technology, Trapping, MIcrowave detection, 7. Clean energy, 01 natural sciences, GaN, Trap (computing), [SPI]Engineering Sciences [physics], Responsivity, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Electrical impedance, Traps, Surface states, Diode, 010302 applied physics, Self-switching diodes, business.industry, 020208 electrical & electronic engineering, Heterojunction, Atmospheric temperature range, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Optoelectronics, business
Abstract

The presence of trap states in self-switching diodes (SSD) based on an AlGaN/GaN heterojunction has been identified by means of their AC characterization between 75 kHz to 30 MHz in a wide temperature range, from 80 K to 300 K. Measurements allow us to determine two different characteristic energies of the traps, 12 meV and 61 meV, being associated to a distribution of surface states and one discrete bulk trap, respectively. The impact of the trapping effects on microwave detection at zero-bias has also been analyzed in the same temperature range, the measured responsivity showing an unusual enhancement and a low-frequency roll-off at low temperatures., Spanish MINECO and FEDER through project TEC2017-83910-R and Junta de Castilla y León and FEDER through project SA254P18

Published
2020

Catalog

Books, media, physical & digital resources
See catalog results