46 results on '"V., Bouchiat"'
Search Results
2. Influence of Dopant Concentration on the Electrical Transport at Low Temperature in Silicon Nanowires
- Author
-
I. Ionica, L. Montes, J. Zimmermann, L. Saminadayar, and V. Bouchiat
- Subjects
Cross section (geometry) ,Condensed Matter::Materials Science ,Materials science ,Condensed matter physics ,Dopant ,Condensed Matter::Superconductivity ,Doping ,Nanowire ,Field effect ,Coulomb blockade ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Thermal conduction ,Silicon nanowires - Abstract
We demonstrate the correlation between the the doping atoms concentration and the Coulomb blockade phenomenon in silicon nanowires. At room and intermediate temperatures nanowires show a field effect, while at low temperature current oscillations due to Coulomb blockade dominate transport close to the conduction threshold. Detailed experimental results on samples with two different doping levels allowed Coulomb blockade to be related to the presence of the dopants. In the limit of a few dopants per cross section, as for low doping level (2.5×1017cm-3), the electrical behavior of the nanowire is similar to that of a one dimensional array of dots. In nanowires with a high doping level (1019cm-3), transport can be modeled on the basis of a two dimensional arrays of dots.
- Published
- 2006
- Full Text
- View/download PDF
3. Resistless Patterning of Quantum Nanostructures by Local Anodization with an Atomic Force Microscope
- Author
-
Tonneau, D., V., Bouchiat, M., Faucehr, T., Fournier, B., Pannetier, C., Thirion, N., Clement, D., Tonneau, H., Dallaoprta, V., Safarov, J.C., Villegier, D., Fraboulet, D., Mariolle, J., Gautier, Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), and Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2002
4. Integration of self-assembled carbon nanotube transistors: statistics and gate engineering at the wafer scale.
- Author
-
L Marty, A Bonhomme, A Iaia, E Andr, E Rauwel, C Dubourdieu, A Toffoli, F Ducroquet, A M Bonnot, and V Bouchiat
- Subjects
NANOTUBES ,CARBON ,SEMICONDUCTOR wafers ,DIELECTRICS - Abstract
We present a full process based on chemical vapour deposition that allows fabrication and integration at the wafer scale of carbon-nanotube-based field effect transistors. We make a statistical analysis of the integration yield that allows assessment of the parameter fluctuations of the titanium-nanotube contact obtained by self-assembly. This procedure is applied to raw devices without post-process. Statistics at the wafer scale reveal the respective role of semiconducting and metallic connected nanotubes and show that connection yields up to 86% can be reached. For large scale device integration, our process has to implement both wafer-scale self-assembly of the nanotubes and high transistor performances. In order to address this last issue, a gate engineering process has been investigated. We present the improvements obtained using low and high ? dielectrics for the gate oxide. [ABSTRACT FROM AUTHOR]
- Published
- 2006
- Full Text
- View/download PDF
5. Raman Spectroscopy of Free-Standing Individual Semiconducting Single-Wall Carbon Nanotubes.
- Author
-
M. Paillet, S. Langlois, J.-L. Sauvajol, L. Marty, A. Iaia, C. Naud, V. Bouchiat, and A. M. Bonnot
- Published
- 2006
- Full Text
- View/download PDF
6. Effect of aging-induced disorder on the quantum transport properties of few-layer WTe 2
- Author
-
Zhidong Zhang, W. L. Guo, J. Yin, V. Bouchiat, S. Dubey, Z. H. Wang, J. Tan, J. L. Ma, T. Xiong, Da Li, Mao-Lin Chen, Z. M. Dai, Dong-Ming Sun, W. Li, Wei-Lai Liu, Zheng Han, Y. N. Chen, Xiaoxi Li, Systèmes hybrides de basse dimensionnalité (NEEL - HYBRID), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire d'Ingénierie des Systèmes Biologiques et des Procédés (LISBP), Institut National de la Recherche Agronomique (INRA)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research [Chinese Academy of Sciences] (IMR), Chinese Academy of Sciences [Beijing] (CAS)-Chinese Academy of Sciences [Beijing] (CAS), Institute for Brain Research, Beijing Normal University, Beijing Normal University (BNU), HYBRID - Systèmes Hybrides de basse dimensionnalité, Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de la Recherche Agronomique (INRA), Laboratoire de Chimie et Physique - Approche Multi-échelle des Milieux Complexes (LCP-A2MC), Université de Lorraine (UL), Beijing Normal University, and Systèmes hybrides de basse dimensionnalité (HYBRID)
- Subjects
Physics ,[PHYS]Physics [physics] ,Thin layers ,Condensed matter physics ,Magnetoresistance ,Mechanical Engineering ,02 engineering and technology ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Amorphous solid ,symbols.namesake ,Nanoelectronics ,Mechanics of Materials ,Transmission electron microscopy ,Metastability ,0103 physical sciences ,symbols ,General Materials Science ,010306 general physics ,0210 nano-technology ,Quantum ,Raman scattering ,ComputingMilieux_MISCELLANEOUS - Abstract
Atomically thin layers of transition-metal dicalcogenides (TMDCs) are often known to be metastable in the ambient atmosphere. Understanding the mechanism of degradation is essential for their future applications in nanoelectronics, and thus has attracted intensive interest recently. Here, we demonstrate a systematic study of atomically thin WTe$_{2}$ in its low temperature quantum electronic transport properties. Strikingly, while the temperature dependence of few layered WTe$_{2}$ showed clear metallic tendency in the fresh state, degraded devices first exhibited a re-entrant insulating behavior, and finally entered a fully insulating state. Correspondingly, a crossover from parabolic to linear magnetoresistance, and finally to weak anti-localization was seen. Real-time Raman scattering measurement, together with transmission electron microscopy studies done before and after air degradation of atomically thin WTe$_{2}$ further confirmed that the material gradually form amorphous islands. It thus leads to localized electronic states and explains the low temperature Coulomb gap observed in transport measurements. Our study reveals for the first time the correlation between the unusual magnetotransport and disorder in few-layered WTe$_{2}$, which is indispensable in providing guidance on its future devices application.
- Full Text
- View/download PDF
7. Tunable Graphene dc Superconducting Quantum Interference Device.
- Author
-
Çaǧlar Girit, V. Bouchiat, O. Naaman, Y. Zhang, M. F. Crommie, A. Zettl, and I. Siddiqi
- Subjects
- *
SUPERCONDUCTING quantum interference devices , *DIRECT currents , *ELECTRON transport , *ELECTRODES , *JOSEPHSON effect , *ENERGY-band theory of solids , *MICROFABRICATION - Abstract
Graphene exhibits unique electrical properties on account of its reduced dimensionality and “relativistic” band structure. When contacted with two superconducting electrodes, graphene can support Cooper pair transport, resulting in the well-known Josephson effect. We report here the fabrication and operation of a two junction dc superconducting quantum interference device (SQUID) formed by a single graphene sheet contacted with aluminum/palladium electrodes in the geometry of a loop. The supercurrent in this device can be modulated not only via an electrostatic gate but also by an applied magnetic fielda potentially powerful probe of electronic transport in graphene and an ultrasensitive platform for nanomagnetometry. [ABSTRACT FROM AUTHOR]
- Published
- 2009
- Full Text
- View/download PDF
8. Effet de champ et blocage de Coulomb dans des nanostructures de silicium élaborées par microscopie à force atomique
- Author
-
Ionica, Irina, Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Centre de Recherches sur les Très Basses Températures (CRTBT), Institut National Polytechnique de Grenoble - INPG, and J. Zimmermann, L. Montés, L. Saminadayar, V. Bouchiat
- Subjects
lithographie AFM ,Coulomb blockade ,blocage de Coulomb ,AFM lithography ,field effect ,chaîne d'îlots ,[PHYS.PHYS]Physics [physics]/Physics [physics] ,conduction par saut à distance variable ,localised oxidation ,physique mésoscopique ,variable range hopping ,low temperature measurements ,tunnel junction arrays ,dopage ,nanowires ,Silicon-on-Insulator (SOI) ,mesures à basse température ,nanofils ,doping level ,silicium sur isolant (SOI) ,oxydation localisée ,effet de champ - Abstract
This work presents the study of the electrical transport in low dimensional highly doped silicon structures. The context of this study is the understanding of the mesoscopic transport and the size reduction of MOS devices. The nanostructures are fabricated by a local oxidation under the tip of an atomic force microscope (AFM), on ultra-thin silicon on insulator (SOI) substrates. This technique was preferred for its high flexibility, resolution (10nm) and no proximity effects. It allows obtaining nanostructures with cross-sections of some hundreds square nanometers.While the electrical behaviour at room temperature is similar to MOS/SOI devices, at low temperatures current oscillations are superimposed to the field effect and dominate the transport under 70K. Thus, the electrical transport is subject to Coulomb blockade, characterized by current oscillations, Coulomb diamonds shapes in the current versus drain voltage and gate voltage mapping and the simple activation law of the conductance. We associate the Coulomb blockade in these nanowires to the potential wells due to the presence of the doping atoms in the structures. A one dimensional array of islands model explains the electrical behaviour of the low doping structures, while for the highly doped structures the transport is well modelled by a two dimensional array of islands model. We have used an original method to fabricate silicon test nanostructures used to investigate the electrical transport mechanisms in low dimensional systems.; Cette thèse porte sur l'étude du transport électronique dans des structures de faibles dimensionnalités en silicium dopé. Elle s'inscrit notamment dans le contexte de la compréhension du transport mésoscopique et de la miniaturisation des dispositifs MOS.Les nanostructures sont réalisées par oxydation localisée sous la pointe d'un microscope à force atomique (AFM), sur des substrats silicium sur isolant (SOI) ultra-minces. Cette technique a été choisie pour sa souplesse, sa résolution (10nm), l'absence d'effet de proximité. Elle permet d'obtenir des nanostructures de quelques centaines de nm2 de section.Tandis qu'à température ambiante le comportement électronique est semblable à celui d'un dispositif MOS/SOI, à basse température des oscillations de courant se superposent à l'effet de champ, pour dominer le transport en dessous de 70K. Ainsi, le transport électronique est dominé par le blocage de Coulomb, qui se traduit par des oscillations de courant, une loi d'activation en température de la conductance et des structures de type « diamant de Coulomb » dans la carte de courant en fonction des tensions de grille et de drain. Nous associons le blocage de Coulomb dans ces structures aux puits de potentiel créés par la présence de dopants à l'intérieur du nanofil. Pour les faibles dopages les nanofils se comportent comme de chaînes unidimensionnelles d'îlots en série, alors que pour les forts dopages leur comportement se modélise par des chaînes bidimensionnelles.La technique originale de nanofabrication utilisée permet la réalisation de nanostructures de test en vue d'explorer les mécanismes de conduction dans le silicium nanostructuré.
- Published
- 2005
9. Field effect and Coulomb blockade in silicon nanostructures fabricated with an atomic force microscope
- Author
-
Ionica, Irina, Ionica, Irina, Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), Centre de Recherches sur les Très Basses Températures (CRTBT), Institut National Polytechnique de Grenoble - INPG, and J. Zimmermann, L. Montés, L. Saminadayar, V. Bouchiat
- Subjects
lithographie AFM ,Coulomb blockade ,blocage de Coulomb ,[PHYS.PHYS]Physics [physics]/Physics [physics] ,AFM lithography ,field effect ,chaîne d'îlots ,conduction par saut à distance variable ,localised oxidation ,physique mésoscopique ,variable range hopping ,low temperature measurements ,tunnel junction arrays ,dopage ,nanowires ,Silicon-on-Insulator (SOI) ,mesures à basse température ,nanofils ,doping level ,[PHYS.PHYS] Physics [physics]/Physics [physics] ,silicium sur isolant (SOI) ,oxydation localisée ,effet de champ - Abstract
This work presents the study of the electrical transport in low dimensional highly doped silicon structures. The context of this study is the understanding of the mesoscopic transport and the size reduction of MOS devices. The nanostructures are fabricated by a local oxidation under the tip of an atomic force microscope (AFM), on ultra-thin silicon on insulator (SOI) substrates. This technique was preferred for its high flexibility, resolution (10nm) and no proximity effects. It allows obtaining nanostructures with cross-sections of some hundreds square nanometers.While the electrical behaviour at room temperature is similar to MOS/SOI devices, at low temperatures current oscillations are superimposed to the field effect and dominate the transport under 70K. Thus, the electrical transport is subject to Coulomb blockade, characterized by current oscillations, Coulomb diamonds shapes in the current versus drain voltage and gate voltage mapping and the simple activation law of the conductance. We associate the Coulomb blockade in these nanowires to the potential wells due to the presence of the doping atoms in the structures. A one dimensional array of islands model explains the electrical behaviour of the low doping structures, while for the highly doped structures the transport is well modelled by a two dimensional array of islands model. We have used an original method to fabricate silicon test nanostructures used to investigate the electrical transport mechanisms in low dimensional systems., Cette thèse porte sur l'étude du transport électronique dans des structures de faibles dimensionnalités en silicium dopé. Elle s'inscrit notamment dans le contexte de la compréhension du transport mésoscopique et de la miniaturisation des dispositifs MOS.Les nanostructures sont réalisées par oxydation localisée sous la pointe d'un microscope à force atomique (AFM), sur des substrats silicium sur isolant (SOI) ultra-minces. Cette technique a été choisie pour sa souplesse, sa résolution (10nm), l'absence d'effet de proximité. Elle permet d'obtenir des nanostructures de quelques centaines de nm2 de section.Tandis qu'à température ambiante le comportement électronique est semblable à celui d'un dispositif MOS/SOI, à basse température des oscillations de courant se superposent à l'effet de champ, pour dominer le transport en dessous de 70K. Ainsi, le transport électronique est dominé par le blocage de Coulomb, qui se traduit par des oscillations de courant, une loi d'activation en température de la conductance et des structures de type « diamant de Coulomb » dans la carte de courant en fonction des tensions de grille et de drain. Nous associons le blocage de Coulomb dans ces structures aux puits de potentiel créés par la présence de dopants à l'intérieur du nanofil. Pour les faibles dopages les nanofils se comportent comme de chaînes unidimensionnelles d'îlots en série, alors que pour les forts dopages leur comportement se modélise par des chaînes bidimensionnelles.La technique originale de nanofabrication utilisée permet la réalisation de nanostructures de test en vue d'explorer les mécanismes de conduction dans le silicium nanostructuré.
- Published
- 2005
10. Correction to "In-Plane Magnetic Domains and Néel-Like Domain Walls in Thin Flakes of the Room Temperature CrTe 2 Van der Waals Ferromagnet".
- Author
-
Purbawati A, Coraux J, Vogel J, Hadj-Azzem A, Wu N, Bendiab N, Jegouso D, Renard J, Marty L, Bouchiat V, Sulpice A, Aballe L, Foerster M, Genuzio F, Locatelli A, Menteş TO, Han ZV, Sun X, Núñez-Regueiro M, and Rougemaille N
- Published
- 2021
- Full Text
- View/download PDF
11. Detection of graphene's divergent orbital diamagnetism at the Dirac point.
- Author
-
Vallejo Bustamante J, Wu NJ, Fermon C, Pannetier-Lecoeur M, Wakamura T, Watanabe K, Taniguchi T, Pellegrin T, Bernard A, Daddinounou S, Bouchiat V, Guéron S, Ferrier M, Montambaux G, and Bouchiat H
- Abstract
The electronic properties of graphene have been intensively investigated over the past decade. However, the singular orbital magnetism of undoped graphene, a fundamental signature of the characteristic Berry phase of graphene’s electronic wave functions, has been challenging to measure in a single flake. Using a highly sensitive giant magnetoresistance (GMR) sensor, we have measured the gate voltage–dependent magnetization of a single graphene monolayer encapsulated between boron nitride crystals. The signal exhibits a diamagnetic peak at the Dirac point whose magnetic field and temperature dependences agree with long-standing theoretical predictions. Our measurements offer a means to monitor Berry phase singularities and explore correlated states generated by the combined effects of Coulomb interactions, strain, or moiré potentials.
- Published
- 2021
- Full Text
- View/download PDF
12. Introducing a biomimetic coating for graphene neuroelectronics: toward in-vivo applications.
- Author
-
Bourrier A, Szarpak-Jankowska A, Veliev F, Olarte-Hernandez R, Shkorbatova P, Bonizzato M, Rey E, Barraud Q, Briançon-Marjollet A, Auzely R, Courtine G, Bouchiat V, and Delacour C
- Subjects
- Biomimetics, Neurons physiology, Polymers, Prostheses and Implants, Graphite
- Abstract
Electronic micro and nano-devices are suitable tools to monitor the activity of many individual neurons over mesoscale networks. However the inorganic materials currently used in microelectronics are barely accepted by neural cells and tissues, thus limiting both the sensor lifetime and efficiency. In particular, penetrating intracortical probes face high failure rate because of a wide immune response of cells and tissues. This adverse reaction called gliosis leads to the rejection of the implanted probe after few weeks and prevent long-lasting recordings of cortical neurons. Such acceptance issue impedes the realization of many neuro-rehabilitation projects. To overcome this, graphene and related carbon-based materials have attracted a lot of interest regarding their positive impact on the adhesion and regeneration of neurons, and their ability to provide high-sensitive electronic devices, such as graphene field effect transistor (G-FET). Such devices can also be implemented on numerous suitable substrates including soft substrates to match the mechanical compliance of cells and tissues, improving further the biocompatibility of the implants. Thus, using graphene as a coating and sensing device material could significantly enhance the acceptance of intracortical probes. However, such a thin monolayer of carbon atoms could be teared off during manipulation and insertion within the brain, and could also display degradation over time. In this work, we have investigated the ability to protect graphene with a natural, biocompatible and degradable polymeric film derivated from hyaluronic acid (HA). We demonstrate that HA-based coatings can be deposited over a wide range of substrates, including intracortical probes and graphene FET arrays without altering the underlying device material, its biocompatibility and sensitivity. Moreover, we show that this coating can be monitored in situ by quantifying the number of deposited charges with the G-FET arrays. The reported graphene functionalization offers promising alternatives for improving the acceptance of various neural interfaces., (© 2020 IOP Publishing Ltd.)
- Published
- 2020
- Full Text
- View/download PDF
13. In-Plane Magnetic Domains and Néel-like Domain Walls in Thin Flakes of the Room Temperature CrTe 2 Van der Waals Ferromagnet.
- Author
-
Purbawati A, Coraux J, Vogel J, Hadj-Azzem A, Wu N, Bendiab N, Jegouso D, Renard J, Marty L, Bouchiat V, Sulpice A, Aballe L, Foerster M, Genuzio F, Locatelli A, Menteş TO, Han ZV, Sun X, Núñez-Regueiro M, and Rougemaille N
- Abstract
The recent discovery of magnetic van der Waals (vdW) materials triggered a wealth of investigations in materials science and now offers genuinely new prospects for both fundamental and applied research. Although the catalog of vdW ferromagnets is rapidly expanding, most of them have a Curie temperature below 300 K, a notable disadvantage for potential applications. Combining element-selective X-ray magnetic imaging and magnetic force microscopy, we resolve at room temperature the magnetic domains and domain walls in micron-sized flakes of the CrTe
2 vdW ferromagnet. Flux-closure magnetic patterns suggesting an in-plane six-fold symmetry are observed. Upon annealing the material above its Curie point (315 K), the magnetic domains disappear. By cooling back the sample, a different magnetic domain distribution is obtained, indicating material stability and lack of magnetic memory upon thermal cycling. The domain walls presumably have Néel texture, are preferentially oriented along directions separated by 120°, and have a width of several tens of nanometers. Besides microscopic mapping of magnetic domains and domain walls, the coercivity of the material is found to be of a few millitesla only, showing that the CrTe2 compound is magnetically soft. The coercivity is found to increase as the volume of the material decreases.- Published
- 2020
- Full Text
- View/download PDF
14. Mechanical Exfoliation of Select MAX Phases and Mo 4 Ce 4 Al 7 C 3 Single Crystals to Produce MAXenes.
- Author
-
Gkountaras A, Kim Y, Coraux J, Bouchiat V, Lisi S, Barsoum MW, and Ouisse T
- Abstract
MXenes-2D carbides/nitrides derived from their bulk nanolamellar M
n +1 AXn phase (MAX) counterparts-are, for the most part, obtained by chemical etching. Despite the fact that the MA bonds in the MAX phases are not weak, in this work it is demonstrated that relatively large MAX single crystals can be mechanically exfoliated using the adhesive tape method to produce flakes whose thickness can be reduced down to half a unit cell. The exfoliated flakes, transferred onto SiO2 /Si substrates, are analyzed using electric force microscopy (EFM). No appreciable variation in EFM signal with flake thickness is found. EFM contrast between the flakes and SiO2 not only depends on the contact surface potential, but also on the local capacitance. The contribution of the latter can be used to show the metallic character-confirmed by four-contact resistivity measurements-of even the thinnest of flakes. Because the A-layers are preserved, strictly speaking MXenes are not dealt with in this work, but rather MAXenes. This is important in the case where the "A" layers contain magnetic elements such as Mo4 Ce4 Al7 C3 , whose structure is a derivative of the MAX structure., (© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)- Published
- 2020
- Full Text
- View/download PDF
15. Evolution of inter-layer coupling in artificially stacked bilayer MoS 2 .
- Author
-
Sarkar S, Pradeepa HL, Nayak G, Marty L, Renard J, Coraux J, Bendiab N, Bouchiat V, Basu JK, and Bid A
- Abstract
In this paper, we show experimentally that for van der Waals heterostructures (vdWh) of atomically-thin materials, the hybridization of bands of adjacent layers is possible only for ultra-clean interfaces. This we achieve through a detailed experimental study of the effect of interfacial separation and adsorbate content on the photoluminescence emission and Raman spectra of ultra-thin vdWh. For vdWh with atomically-clean interfaces, we find the emergence of novel vibrational Raman-active modes whose optical signatures differ significantly from that of the constituent layers. Additionally, we find for such systems a significant modification of the photoluminescence emission spectra with the appearance of peaks whose strength and intensity directly correlate with the inter-layer coupling strength. Our ability to control the intensity of the photoluminescence emission led to the observation of detailed optical features like indirect-band peaks. Our study establishes that it is possible to engineer atomically-thin van der Waals heterostructures with desired optical properties by controlling the inter-layer spacing, and consequently the inter-layer coupling between the constituent layers., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)
- Published
- 2019
- Full Text
- View/download PDF
16. Monolayer Graphene Coating of Intracortical Probes for Long-Lasting Neural Activity Monitoring.
- Author
-
Bourrier A, Shkorbatova P, Bonizzato M, Rey E, Barraud Q, Courtine G, Othmen R, Reita V, Bouchiat V, and Delacour C
- Subjects
- Animals, Astrocytes cytology, Cell Adhesion, Cell Count, Cell Proliferation, Cells, Cultured, Electrochemistry, Mice, Transgenic, Neurites metabolism, Neurons cytology, Coated Materials, Biocompatible chemistry, Graphite chemistry, Neurons physiology
- Abstract
The invasiveness of intracortical interfaces currently used today is responsible for the formation of an intense immunoresponse and inflammatory reaction from neural cells and tissues. This leads to a high concentration of reactive glial cells around the implant site, creating a physical barrier between the neurons and the recording channels. Such a rejection of foreign analog interfaces causes neural signals to fade from recordings which become flooded by background noise after a few weeks. Despite their invasiveness, those devices are required to track single neuron activity and decode fine sensory or motor commands. In particular, such quantitative and long-lasting recordings of individual neurons are crucial during a long time period (several months) to restore essential functions of the cortex, disrupted after injuries, stroke, or neurodegenerative diseases. To overcome this limitation, graphene and related materials have attracted numerous interests, as they gather in the same material many suitable properties for interfacing living matter, such as an exceptionally high neural affinity, diffusion barrier, and high physical robustness. In this work, the neural affinity of a graphene monolayer with numerous materials commonly used in neuroprostheses is compared, and its impact on the performance and durability of intracortical probes is investigated. For that purpose, an innovative coating method to wrap 3D intracortical probes with a continuous monolayer graphene is developed. Experimental evidence demonstrate the positive impact of graphene on the bioacceptance of conventional intracortical probes, in terms of detection efficiency and tissues responses, allowing real-time samplings of motor neuron activity during 5 weeks. Since continuous graphene coatings can easily be implemented on a wide range of 3D surfaces, this study further motivates the use of graphene and related materials as it could significantly contribute to reduce the current rejection of neural probes currently used in many research areas, from fundamental neurosciences to medicine and neuroprostheses., (© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)
- Published
- 2019
- Full Text
- View/download PDF
17. Coherence and Density Dynamics of Excitons in a Single-Layer MoS 2 Reaching the Homogeneous Limit.
- Author
-
Jakubczyk T, Nayak G, Scarpelli L, Liu WL, Dubey S, Bendiab N, Marty L, Taniguchi T, Watanabe K, Masia F, Nogues G, Coraux J, Langbein W, Renard J, Bouchiat V, and Kasprzak J
- Abstract
We measure the coherent nonlinear response of excitons in a single layer of molybdenum disulfide embedded in hexagonal boron nitride, forming a h-BN/MoS
2 / h-BN heterostructure. Using four-wave mixing microscopy and imaging, we correlate the exciton inhomogeneous broadening with the homogeneous one and population lifetime. We find that the exciton dynamics is governed by microscopic disorder on top of the ideal crystal properties. Analyzing the exciton ultrafast density dynamics using amplitude and phase of the response, we investigate the relaxation pathways of the resonantly driven exciton population. The surface protection via encapsulation provides stable monolayer samples with low disorder, avoiding surface contaminations and the resulting exciton broadening and modifications of the dynamics. We identify areas localized to a few microns where the optical response is totally dominated by homogeneous broadening. Across the sample of tens of micrometers, weak inhomogeneous broadening and strain effects are observed, attributed to the remaining interaction with the h-BN and imperfections in the encapsulation process.- Published
- 2019
- Full Text
- View/download PDF
18. Liquid-phase exfoliation of graphite into graphene nanosheets in a hydrocavitating 'lab-on-a-chip'.
- Author
-
Qiu X, Bouchiat V, Colombet D, and Ayela F
- Abstract
Hydrodynamic cavitation 'on a chip' has been used to achieve liquid-phase exfoliation of natural graphite to get graphene. We have taken advantage of the small size of such a 'lab-on-a-chip' (LOC) with low input-power consumption, to produce afterwards few layers of graphene nanosheets in a surfactant suspension. Characterization of the processed material has been performed by TGA analysis, SEM, TEM, AFM and Raman measurements. Observations have demonstrated the presence of monolayers and few layers of graphene with a lateral size around 300 nm, exfoliated from a graphite powder suspension flowing through the microsystem., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)
- Published
- 2019
- Full Text
- View/download PDF
19. Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS 2 in the Presence of Defects, Strain, and Charged Impurities.
- Author
-
Dubey S, Lisi S, Nayak G, Herziger F, Nguyen VD, Le Quang T, Cherkez V, González C, Dappe YJ, Watanabe K, Taniguchi T, Magaud L, Mallet P, Veuillen JY, Arenal R, Marty L, Renard J, Bendiab N, Coraux J, and Bouchiat V
- Published
- 2018
- Full Text
- View/download PDF
20. Self-Assembled UV Photodetector Made by Direct Epitaxial GaN Growth on Graphene.
- Author
-
Journot T, Bouchiat V, Gayral B, Dijon J, and Hyot B
- Abstract
Hybrid systems based on the combination of crystalline bulk semiconductors with 2D crystals are identified as promising heterogeneous structures for new optoelectronic applications. The direct integration of III-V semiconductors on 2D materials is very attractive to make practical devices but the preservation of the intrinsic properties of the underlying 2D materials remains a challenge. In this work, we study the direct epitaxy of self-organized GaN crystals on graphene. We demonstrate that severe metal-organic chemical vapor deposition growth conditions of GaN (chemically aggressive precursors and high temperatures) are not detrimental to the structural quality and the charge carrier mobility of the graphene base plane. Graphene can therefore be used both as an efficient sensitive material and as a substrate for GaN epitaxy to make a self-assembled UV photodetector. A responsivity as high as 2 A W
-1 is measured in the UV-A range without any further postprocessing compared to simple deposition of contact electrodes. Our study opens the way to build new self-assembled 2D/III-V hybrid optoelectronic devices by direct epitaxy.- Published
- 2018
- Full Text
- View/download PDF
21. Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS 2 in the Presence of Defects, Strain, and Charged Impurities.
- Author
-
Dubey S, Lisi S, Nayak G, Herziger F, Nguyen VD, Le Quang T, Cherkez V, González C, Dappe YJ, Watanabe K, Taniguchi T, Magaud L, Mallet P, Veuillen JY, Arenal R, Marty L, Renard J, Bendiab N, Coraux J, and Bouchiat V
- Abstract
Few- and single-layer MoS
2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all three effects and identify to what extent they are intrinsic to the material or extrinsic to it, i.e., related to its local environment. We do so by using different sources of MoS2 -a natural one and one prepared at high pressure and high temperature-and different substrates bringing varying amounts of charged impurities and by separating the contributions of internal strain and doping in Raman spectra. Photoluminescence unveils various optically active excitonic complexes. We discover a defect-bound state having a low binding energy of 20 meV that does not appear sensitive to strain and doping, unlike charged excitons. Conversely, the defect does not significantly dope or strain MoS2 . Scanning tunneling microscopy and density functional theory simulations point to substitutional atoms, presumably individual nitrogen atoms at the sulfur site. Our work shows the way to a systematic understanding of the effect of external and internal fields on the optical properties of two-dimensional materials.- Published
- 2017
- Full Text
- View/download PDF
22. Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS 2 transistor.
- Author
-
Li XX, Fan ZQ, Liu PZ, Chen ML, Liu X, Jia CK, Sun DM, Jiang XW, Han Z, Bouchiat V, Guo JJ, Chen JH, and Zhang ZD
- Abstract
Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS
2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.Van der Waals heterostructures of atomically thin materials hold promise for nanoelectronics. Here, the authors demonstrate a reverted stacking fabrication method for heterostructures and devise a vertical tunnel-contacted MoS2 transistor, enabling gate tunable rectification and reversible pn to np diode behaviour.- Published
- 2017
- Full Text
- View/download PDF
23. Recording Spikes Activity in Cultured Hippocampal Neurons Using Flexible or Transparent Graphene Transistors.
- Author
-
Veliev F, Han Z, Kalita D, Briançon-Marjollet A, Bouchiat V, and Delacour C
- Abstract
The emergence of nanoelectronics applied to neural interfaces has started few decades ago, and aims to provide new tools for replacing or restoring disabled functions of the nervous systems as well as further understanding the evolution of such complex organization. As the same time, graphene and other 2D materials have offered new possibilities for integrating micro and nano-devices on flexible, transparent, and biocompatible substrates, promising for bio and neuro-electronics. In addition to many bio-suitable features of graphene interface, such as, chemical inertness and anti-corrosive properties, its optical transparency enables multimodal approach of neuronal based systems, the electrical layer being compatible with additional microfluidics and optical manipulation ports. The convergence of these fields will provide a next generation of neural interfaces for the reliable detection of single spike and record with high fidelity activity patterns of neural networks. Here, we report on the fabrication of graphene field effect transistors (G-FETs) on various substrates (silicon, sapphire, glass coverslips, and polyimide deposited onto Si/SiO substrates), exhibiting high sensitivity (4 mS/V, close to the Dirac point at V
2 < VLG < VD ) and low noise level (10-22 /Hz, at V2 = 0 V). We demonstrate theLG = 0 V). We demonstrate the in vitro detection of the spontaneous activity of hippocampal neurons in-situ -grown on top of the graphene sensors during several weeks in a millimeter size PDMS fluidics chamber (8 mm wide). These results provide an advance toward the realization of biocompatible devices for reliable and high spatio-temporal sensing of neuronal activity for both in vitro and in vivo applications.- Published
- 2017
- Full Text
- View/download PDF
24. Light Control of Charge Transfer and Excitonic Transitions in a Carbon Nanotube/Porphyrin Hybrid.
- Author
-
Chen Y, Royal G, Flahaut E, Cobo S, Bouchiat V, Marty L, and Bendiab N
- Abstract
Carbon nanotube-chromophore hybrids are promising building blocks in order to obtain a controlled electro-optical transduction effect at the single nano-object level. In this work, a strong spectral selectivity of the electronic and the phononic response of a chromophore-coated single nanotube transistor is observed for which standard photogating cannot account. This paper investigates how light irradiation strongly modifies the coupling between molecules and nanotube within the hybrid by means of combined Raman diffusion and electron transport measurements. Moreover, a nonconventional Raman enhancement effect is observed when light irradiation is on the absorption range of the grafted molecule. Finally, this paper shows how the dynamics of single electron tunneling in the device at low temperature is strongly modified by molecular photoexcitation. Both effects will be discussed in terms of photoinduced excitons coupled to electronic levels., (© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)
- Published
- 2017
- Full Text
- View/download PDF
25. Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.
- Author
-
Zimmermann K, Jordan A, Gay F, Watanabe K, Taniguchi T, Han Z, Bouchiat V, Sellier H, and Sacépé B
- Abstract
Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high-mobility graphene van der Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling quantum point contact operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of integer and fractional quantum Hall edge channels through the quantum point contact. This gate control of edge channels opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.
- Published
- 2017
- Full Text
- View/download PDF
26. A synthetic redox biofilm made from metalloprotein-prion domain chimera nanowires.
- Author
-
Altamura L, Horvath C, Rengaraj S, Rongier A, Elouarzaki K, Gondran C, Maçon AL, Vendrely C, Bouchiat V, Fontecave M, Mariolle D, Rannou P, Le Goff A, Duraffourg N, Holzinger M, and Forge V
- Subjects
- Catalysis, Electrochemical Techniques, Electrodes, Electron Transport, Laccase chemistry, Laccase metabolism, Methanococcus metabolism, Microscopy, Atomic Force, Oxidation-Reduction, Metalloproteins chemistry, Nanowires chemistry, Prions chemistry, Rubredoxins chemistry
- Abstract
Engineering bioelectronic components and set-ups that mimic natural systems is extremely challenging. Here we report the design of a protein-only redox film inspired by the architecture of bacterial electroactive biofilms. The nanowire scaffold is formed using a chimeric protein that results from the attachment of a prion domain to a rubredoxin (Rd) that acts as an electron carrier. The prion domain self-assembles into stable fibres and provides a suitable arrangement of redox metal centres in Rd to permit electron transport. This results in highly organized films, able to transport electrons over several micrometres through a network of bionanowires. We demonstrate that our bionanowires can be used as electron-transfer mediators to build a bioelectrode for the electrocatalytic oxygen reduction by laccase. This approach opens opportunities for the engineering of protein-only electron mediators (with tunable redox potentials and optimized interactions with enzymes) and applications in the field of protein-only bioelectrodes.
- Published
- 2017
- Full Text
- View/download PDF
27. Biaxial Strain Transfer in Supported Graphene.
- Author
-
Bousige C, Balima F, Machon D, Pinheiro GS, Torres-Dias A, Nicolle J, Kalita D, Bendiab N, Marty L, Bouchiat V, Montagnac G, Souza Filho AG, Poncharal P, and San-Miguel A
- Abstract
Understanding the mechanism and limits of strain transfer between supported 2D systems and their substrate is a most needed step toward the development of strain engineering at the nanoscale. This includes applications in straintronics, nanoelectromechanical devices, or new nanocomposites. Here, we have studied the limits of biaxial compressive strain transfer among SiO
2 , diamond, and sapphire substrates and graphene. Using high pressure-which allows maximizing the adhesion between graphene and the substrate on which it is deposited-we show that the relevant parameter governing the graphene mechanical response is not the applied pressure but rather the strain that is transmitted from the substrate. Under these experimental conditions, we also show the existence of a critical biaxial stress beyond which strain transfer become partial and introduce a parameter, α, to characterize strain transfer efficiency. The critical stress and α appear to be dependent on the nature of the substrate. Under ideal biaxial strain transfer conditions, the phonon Raman G-band dependence with strain appears to be linear with a slope of -60 ± 3 cm-1 /% down to biaxial strains of -0.9%. This evolution appears to be general for both biaxial compression and tension for different experimental setups, at least in the biaxial strain range -0.9% < ε < 1.8%, thus providing a criterion to validate total biaxial strain transfer hypotheses. These results invite us to cast a new look at mechanical strain experiments on deposited graphene as well as to other 2D layered materials.- Published
- 2017
- Full Text
- View/download PDF
28. Nanofaceting as a stamp for periodic graphene charge carrier modulations.
- Author
-
Vondráček M, Kalita D, Kučera M, Fekete L, Kopeček J, Lančok J, Coraux J, Bouchiat V, and Honolka J
- Abstract
The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 10(13) carriers per cm(2) along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.
- Published
- 2016
- Full Text
- View/download PDF
29. Impact of crystalline quality on neuronal affinity of pristine graphene.
- Author
-
Veliev F, Briançon-Marjollet A, Bouchiat V, and Delacour C
- Subjects
- Animals, Biocompatible Materials chemistry, Cell Adhesion drug effects, Cells, Cultured, Crystallization, Graphite chemistry, Mice, Nerve Net drug effects, Surface Properties, Tissue Engineering, Biocompatible Materials pharmacology, Graphite pharmacology, Neurogenesis drug effects, Neurons cytology, Neurons drug effects
- Abstract
Due to its outstanding mechanical and electrical properties as well as chemical inertness, graphene has attracted a growing interest in the field of bioelectric interfacing. Herein, we investigate the suitability of pristine, i.e. without a cell adhesive coating, chemical vapor deposition (CVD) grown monolayer graphene to act as a platform for neuronal growth. We study the development of primary hippocampal neurons grown on bare graphene (transferred on glass coverslip) for up to 5 days and show that pristine graphene significantly improves the neurons adhesion and outgrowth at the early stage of culture (1-2 days in vitro). At the later development stage, neurons grown on coating free graphene (untreated with poly-L-lysine) show remarkably well developed neuritic architecture similar to those cultured on conventional poly-L-lysine coated glass coverslips. This exceptional possibility to bypass the adhesive coating allows a direct electrical contact of graphene to the cells and reveals its great potential for chronic medical implants and tissue engineering. Moreover, regarding the controversial results obtained on the neuronal affinity of pristine graphene and its ability to support neuronal growth without the need of polymer or protein coating, we found that the crystallinity of CVD grown graphene plays an important role in neuronal attachment, outgrowth and axonal specification. In particular, we show that the decreasing crystalline quality of graphene tunes the neuronal affinity from highly adhesive to fully repellent., (Copyright © 2016 Elsevier Ltd. All rights reserved.)
- Published
- 2016
- Full Text
- View/download PDF
30. A versatile strategy towards non-covalent functionalization of graphene by surface-confined supramolecular self-assembly of Janus tectons.
- Author
-
Du P, Bléger D, Charra F, Bouchiat V, Kreher D, Mathevet F, and Attias AJ
- Abstract
Two-dimensional (2D), supramolecular self-assembly at surfaces is now well-mastered with several existing examples. However, one remaining challenge to enable future applications in nanoscience is to provide potential functionalities to the physisorbed adlayer. This work reviews a recently developed strategy that addresses this key issue by taking advantage of a new concept, Janus tecton materials. This is a versatile, molecular platform based on the design of three-dimensional (3D) building blocks consisting of two faces linked by a cyclophane-type pillar. One face is designed to steer 2D self-assembly onto C(sp(2))-carbon-based flat surfaces, the other allowing for the desired functionality above the substrate with a well-controlled lateral order. In this way, it is possible to simultaneously obtain a regular, non-covalent paving as well as supramolecular functionalization of graphene, thus opening interesting perspectives for nanoscience applications.
- Published
- 2015
- Full Text
- View/download PDF
31. Surface-confined self-assembled Janus tectons: a versatile platform towards the noncovalent functionalization of graphene.
- Author
-
Du P, Jaouen M, Bocheux A, Bourgogne C, Han Z, Bouchiat V, Kreher D, Mathevet F, Fiorini-Debuisschert C, Charra F, and Attias AJ
- Abstract
A general strategy for simultaneously generating surface-based supramolecular architectures on flat sp(2) -hybridized carbon supports and independently exposing on demand off-plane functionality with controlled lateral order is highly desirable for the noncovalent functionalization of graphene. Here, we address this issue by providing a versatile molecular platform based on a library of new 3D Janus tectons that form surface-confined supramolecular adlayers in which it is possible to simultaneously steer the 2D self-assembly on flat C(sp(2))-based substrates and tailor the external interface above the substrate by exposure to a wide variety of small terminal chemical groups and functional moieties. This approach is validated throughout by scanning tunneling microscopy (STM) at the liquid-solid interface and molecular mechanics modeling studies. The successful self-assembly on graphene, together with the possibility to transfer the graphene monolayer onto various substrates, should considerably extend the application of our functionalization strategy., (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)
- Published
- 2014
- Full Text
- View/download PDF
32. Strain superlattices and macroscale suspension of graphene induced by corrugated substrates.
- Author
-
Reserbat-Plantey A, Kalita D, Han Z, Ferlazzo L, Autier-Laurent S, Komatsu K, Li C, Weil R, Ralko A, Marty L, Guéron S, Bendiab N, Bouchiat H, and Bouchiat V
- Abstract
We investigate the organized formation of strain, ripples, and suspended features in macroscopic graphene sheets transferred onto corrugated substrates made of an ordered array of silica pillars with variable geometries. Depending on the pitch and sharpness of the corrugated array, graphene can conformally coat the surface, partially collapse, or lie fully suspended between pillars in a fakir-like fashion over tens of micrometers. With increasing pillar density, ripples in collapsed films display a transition from random oriented pleats emerging from pillars to organized domains of parallel ripples linking pillars, eventually leading to suspended tent-like features. Spatially resolved Raman spectroscopy, atomic force microscopy, and electronic microscopy reveal uniaxial strain domains in the transferred graphene, which are induced and controlled by the geometry. We propose a simple theoretical model to explain the structural transition between fully suspended and collapsed graphene. For the arrays of high density pillars, graphene membranes stay suspended over macroscopic distances with minimal interaction with the pillars' apexes. It offers a platform to tailor stress in graphene layers and opens perspectives for electron transport and nanomechanical applications.
- Published
- 2014
- Full Text
- View/download PDF
33. Electrical switch to the resonant magneto-phonon effect in graphene.
- Author
-
Leszczynski P, Han Z, Nicolet AA, Piot BA, Kossacki P, Orlita M, Bouchiat V, Basko DM, Potemski M, and Faugeras C
- Abstract
We report a comprehensive study of the tuning with electric fields of the resonant magneto-exciton optical phonon coupling in gated graphene. For magnetic fields around B ∼ 25 T that correspond to the range of the fundamental magneto-phonon resonance, the electron-phonon coupling can be switched on and off by tuning the position of the Fermi level in order to Pauli block the two fundamental inter-Landau level excitations. The effects of such a profound change in the electronic excitation spectrum are traced through investigations of the optical phonon response in polarization resolved magneto-Raman scattering experiments. We report on the observation of a splitting of the phonon feature with satellite peaks developing at particular values of the Landau level filling factor on the low or on the high energy side of the phonon, depending on the relative energy of the discrete electronic excitation and of the optical phonon. Shifts of the phonon energy as large as ±60 cm(-1) are observed close to the resonance. The intraband electronic excitation, the cyclotron resonance, is shown to play a relevant role in the observed spectral evolution of the phonon response.
- Published
- 2014
- Full Text
- View/download PDF
34. Electric field-controlled rippling of graphene.
- Author
-
Osváth Z, Lefloch F, Bouchiat V, and Chapelier C
- Subjects
- Electronics, Metals chemistry, Nanostructures ultrastructure, Static Electricity, Graphite chemistry, Nanostructures chemistry
- Abstract
Metal-graphene interfaces generated by electrode deposition induce barriers or potential modulations influencing the electronic transport properties of graphene based devices. However, their impact on the local mechanical properties of graphene is much less studied. Here we show that graphene near a metallic interface can exhibit a set of ripples self-organized into domains whose topographic roughness is controlled by the tip bias of a scanning tunneling microscope. The reconstruction from topographic images of graphene bending energy maps sheds light on the local electro-mechanical response of graphene under STM imaging and unveils the role of the stress induced by the vicinity of the graphene-metal interface in the formation and the manipulation of these ripples. Since microscopic rippling is one of the important factors that limit charge carrier mobility in graphene, the control of rippling with a gate voltage may have important consequences in the conductance of graphene devices where transverse electric fields are created by contactless suspended gate electrodes. This opens up also the possibility to dynamically control the local morphology of graphene nanomembranes.
- Published
- 2013
- Full Text
- View/download PDF
35. Functional hybrid systems based on large-area high-quality graphene.
- Author
-
Coraux J, Marty L, Bendiab N, and Bouchiat V
- Abstract
The properties of sp² carbon allotropes can be tuned and enriched by their interaction with other materials. The large interface to the outside world in these forms of carbon is ideally suited for combining in an optimal manner several functionalities thanks to this interaction. A wide range of novel materials holding strong promise in energy, optoelectronics, microelectronics, mechanics, or medical applications have been designed accordingly. Graphene, the last representative of this family of sp² carbon materials, has already yielded a wealth of hybrid systems. A new class of these hybrids is emerging, which allows researchers to exploit the properties of truly single-layer graphene. These systems rely on high-quality graphene. In this Account, we describe our recent efforts to develop hybrid systems through various approaches and with various scopes. Depending on the interaction between graphene and molecules, metal clusters, layers, and substrates, either graphene may essentially preserve the electronic properties that make it a unique platform for electronic transport, or new organization and properties in the materials may arise due to the graphene contact at the expense of deep modification of graphene's properties. We prepare our graphene samples by both mechanical exfoliation of graphite and chemical vapor deposition on metals. We use this to study graphene in contact with various species, which either decorate graphene or are intercalated between it and its substrate. We first address the electronic and magnetic properties in systems where graphene is in epitaxy with a metal and discuss the potential to manipulate the properties of both materials, highlighting graphene's role as a protective capping layer in magnetic functional systems. We then present graphene/metal dot hybrids, which can utilize the two-dimensional gas properties of Dirac fermions in graphene. These hybrids allow one to tune the coupling between clusters hosting electronically ordered states such as superconductivity and explore quantum phase transitions controlled by electrostatic back gates. We finally discuss the optical properties of hybrids in which graphene is decorated with optically active molecules. Depending on how close these molecules are to the graphene's electromechanical systems, the interaction of the system with light can be changed. Fields such as spintronics and catalysis could benefit from high-quality graphene based hybrid systems, which have not been fully explored.
- Published
- 2013
- Full Text
- View/download PDF
36. Quantum and thermal phase slips in superconducting niobium nitride (NbN) ultrathin crystalline nanowire: application to single photon detection.
- Author
-
Delacour C, Pannetier B, Villegier JC, and Bouchiat V
- Subjects
- Crystallization, Membranes, Artificial, Particle Size, Surface Properties, Nanowires chemistry, Niobium chemistry, Nitrogen chemistry, Photons, Quantum Theory, Temperature
- Abstract
We present low-temperature electronic transport properties of superconducting nanowires obtained by nanolithography of 4-nm-thick niobium nitride (NbN) films epitaxially grown on sapphire substrate. Below 6 K, clear evidence of phase slippages is observed in the transport measurements. Upon lowering the temperature, we observe the signatures of a crossover between a thermal and a quantum behavior in the phase slip regimes. We find that phase slips are stable even at the lowest temperatures and that no hotspot is formed. The photoresponse of these nanowires is measured as a function of the light irradiation wavelength and temperature and exhibits a behavior comparable with previous results obtained on thicker films.
- Published
- 2012
- Full Text
- View/download PDF
37. Electrical control of the superconducting-to-insulating transition in graphene-metal hybrids.
- Author
-
Allain A, Han Z, and Bouchiat V
- Abstract
Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites, based either on covalent or non-covalent coupling of adsorbates, or on stacked and multilayered heterostructures. These systems have shown tunable electronic properties such as bandgap engineering, reversible metal-insulating transition or supramolecular spintronics. Tunable superconductivity is expected as well, but experimental realization is lacking. Here, we show experiments based on metal-graphene hybrid composites, enabling the tunable proximity coupling of an array of superconducting nanoparticles of tin onto a macroscopic graphene sheet. This material allows full electrical control of the superconductivity down to a strongly insulating state at low temperature. The observed gate control of superconductivity results from the combination of a proximity-induced superconductivity generated by the metallic nanoparticle array with the two-dimensional and tunable metallicity of graphene. The resulting hybrid material behaves, as a whole, like a granular superconductor showing universal transition threshold and localization of Cooper pairs in the insulating phase. This experiment sheds light on the emergence of superconductivity in inhomogeneous superconductors, and more generally, it demonstrates the potential of graphene as a versatile building block for the realization of superconducting materials.
- Published
- 2012
- Full Text
- View/download PDF
38. A local optical probe for measuring motion and stress in a nanoelectromechanical system.
- Author
-
Reserbat-Plantey A, Marty L, Arcizet O, Bendiab N, and Bouchiat V
- Abstract
Nanoelectromechanical systems can be operated as ultrasensitive mass sensors and ultrahigh-frequency resonators, and can also be used to explore fundamental physical phenomena such as nonlinear damping and quantum effects in macroscopic objects. Various dissipation mechanisms are known to limit the mechanical quality factors of nanoelectromechanical systems and to induce aging due to material degradation, so there is a need for methods that can probe the motion of these systems, and the stresses within them, at the nanoscale. Here, we report a non-invasive local optical probe for the quantitative measurement of motion and stress within a nanoelectromechanical system, based on Fizeau interferometry and Raman spectroscopy. The system consists of a multilayer graphene resonator that is clamped to a gold film on an oxidized silicon surface. The resonator and the surface both act as mirrors and therefore define an optical cavity. Fizeau interferometry provides a calibrated measurement of the motion of the resonator, while Raman spectroscopy can probe the strain within the system and allows a purely spectral detection of mechanical resonance at the nanoscale.
- Published
- 2012
- Full Text
- View/download PDF
39. Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon.
- Author
-
Katsaros G, Spathis P, Stoffel M, Fournel F, Mongillo M, Bouchiat V, Lefloch F, Rastelli A, Schmidt OG, and De Franceschi S
- Abstract
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals by a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here, we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductor-semiconductor devices, such as resonant supercurrent transistors, when the quantum dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling with pronounced dependences on gate voltage and magnetic field.
- Published
- 2010
- Full Text
- View/download PDF
40. Tunable superconducting phase transition in metal-decorated graphene sheets.
- Author
-
Kessler BM, Girit CO, Zettl A, and Bouchiat V
- Abstract
We have produced graphene sheets decorated with a nonpercolating network of nanoscale tin clusters. These metal clusters both efficiently dope the graphene substrate and induce long-range superconducting correlations. We find that despite structural inhomogeneity on mesoscopic length scales (10-100 nm), this material behaves electronically as a homogenous dirty superconductor with a field-effect tuned Berezinskii-Kosterlitz-Thouless transition. Our facile self-assembly method establishes graphene as an ideal tunable substrate for studying induced two-dimensional electronic systems at fixed disorder and our technique can readily be extended to other order parameters such as magnetism.
- Published
- 2010
- Full Text
- View/download PDF
41. Large and flat graphene flakes produced by epoxy bonding and reverse exfoliation of highly oriented pyrolytic graphite.
- Author
-
Huc V, Bendiab N, Rosman N, Ebbesen T, Delacour C, and Bouchiat V
- Abstract
We present a fabrication method producing large and flat graphene flakes that have a few layers down to a single layer based on substrate bonding of a thick sample of highly oriented pyrolytic graphite (HOPG), followed by its controlled exfoliation down to the few to single graphene atomic layers. As the graphite underlayer is intimately bonded to the substrate during the exfoliation process, the obtained graphene flakes are remarkably large and flat and present very few folds and pleats. The high occurrence of single-layered graphene sheets being tens of microns wide in lateral dimensions is assessed by complementary probes including spatially resolved micro-Raman spectroscopy, atomic force microscopy and electrostatic force microscopy. This versatile method opens the way for deposition of graphene on any substrates, including flexible ones.
- Published
- 2008
- Full Text
- View/download PDF
42. Quantum phase transition in a single-molecule quantum dot.
- Author
-
Roch N, Florens S, Bouchiat V, Wernsdorfer W, and Balestro F
- Abstract
Quantum criticality is the intriguing possibility offered by the laws of quantum mechanics when the wave function of a many-particle physical system is forced to evolve continuously between two distinct, competing ground states. This phenomenon, often related to a zero-temperature magnetic phase transition, is believed to govern many of the fascinating properties of strongly correlated systems such as heavy-fermion compounds or high-temperature superconductors. In contrast to bulk materials with very complex electronic structures, artificial nanoscale devices could offer a new and simpler means of understanding quantum phase transitions. Here we demonstrate this possibility in a single-molecule quantum dot, where a gate voltage induces a crossing of two different types of electron spin state (singlet and triplet) at zero magnetic field. The quantum dot is operated in the Kondo regime, where the electron spin on the quantum dot is partially screened by metallic electrodes. This strong electronic coupling between the quantum dot and the metallic contacts provides the strong electron correlations necessary to observe quantum critical behaviour. The quantum magnetic phase transition between two different Kondo regimes is achieved by tuning gate voltages and is fundamentally different from previously observed Kondo transitions in semiconductor and nanotube quantum dots. Our work may offer new directions in terms of control and tunability for molecular spintronics.
- Published
- 2008
- Full Text
- View/download PDF
43. Gate-tuned high frequency response of carbon nanotube Josephson junctions.
- Author
-
Cleuziou JP, Wernsdorfer W, Andergassen S, Florens S, Bouchiat V, Ondarçuhu T, and Monthioux M
- Abstract
Carbon nanotube Josephson junctions in the open quantum dot limit are fabricated using Pd/Al bilayer electrodes, and exhibit gate-controlled superconducting switching currents. Shapiro voltage steps can be observed under radio frequency current excitations, with a damping of the phase dynamics that strongly depends on the gate voltage. These measurements are described by a standard resistively and capacitively shunted junction model showing that the switching currents from the superconducting to the normal state are close to the critical current of the junction. The effective dynamical capacitance of the nanotube junction is found to be strongly gate dependent, suggesting a diffusive contact of the nanotube.
- Published
- 2007
- Full Text
- View/download PDF
44. Optical switching of porphyrin-coated silicon nanowire field effect transistors.
- Author
-
Winkelmann CB, Ionica I, Chevalier X, Royal G, Bucher C, and Bouchiat V
- Subjects
- Crystallization methods, Electrochemistry instrumentation, Electrochemistry methods, Equipment Design, Equipment Failure Analysis, Macromolecular Substances chemistry, Materials Testing, Molecular Conformation, Nanotechnology methods, Particle Size, Surface Properties, Nanotubes chemistry, Nanotubes ultrastructure, Optics and Photonics instrumentation, Porphyrins chemistry, Signal Processing, Computer-Assisted instrumentation, Silicon chemistry, Transistors, Electronic
- Abstract
We study porphyrin derivative coated silicon nanowire field effect transistors (SiNW-FETs), which display a large, stable, and reproducible conductance increase upon illumination. The efficiency and the kinetics of the optical switching are studied as a function of gate voltage, illumination wavelength, and temperature. The decay kinetics from the high- to the low-conductance state is governed by charge recombination via tunneling, with a rate depending on the state of the SiNW-FET. The comparison to porphyrin-sensitized carbon nanotube FETs allows the environment- and molecule-dependent photoconversion process to be distinguished from the charge-to-current transducing effect of the semiconducting channel.
- Published
- 2007
- Full Text
- View/download PDF
45. Carbon nanotube superconducting quantum interference device.
- Author
-
Cleuziou JP, Wernsdorfer W, Bouchiat V, Ondarçuhu T, and Monthioux M
- Subjects
- Equipment Design, Interferometry methods, Nanotechnology methods, Nanotubes, Carbon radiation effects, Interferometry instrumentation, Magnetics instrumentation, Molecular Probe Techniques instrumentation, Nanotechnology instrumentation, Nanotubes, Carbon chemistry
- Abstract
A superconducting quantum interference device (SQUID) with single-walled carbon nanotube (CNT) Josephson junctions is presented. Quantum confinement in each junction induces a discrete quantum dot (QD) energy level structure, which can be controlled with two lateral electrostatic gates. In addition, a backgate electrode can vary the transparency of the QD barriers, thus permitting change in the hybridization of the QD states with the superconducting contacts. The gates are also used to directly tune the quantum phase interference of the Cooper pairs circulating in the SQUID ring. Optimal modulation of the switching current with magnetic flux is achieved when both QD junctions are in the 'on' or 'off' state. In particular, the SQUID design establishes that these CNT Josephson junctions can be used as gate-controlled pi-junctions; that is, the sign of the current-phase relation across the CNT junctions can be tuned with a gate voltage. The CNT-SQUIDs are sensitive local magnetometers, which are very promising for the study of magnetization reversal of an individual magnetic particle or molecule placed on one of the two CNT Josephson junctions.
- Published
- 2006
- Full Text
- View/download PDF
46. Self-assembly of carbon-nanotube-based single-electron memories.
- Author
-
Marty L, Bonnot AM, Bonhomme A, Iaia A, Naud C, André E, and Bouchiat V
- Subjects
- Electronics, Electrons, Materials Testing, Molecular Conformation, Nanotechnology instrumentation, Particle Size, Surface Properties, Crystallization methods, Electrochemistry methods, Information Storage and Retrieval methods, Nanotechnology methods, Nanotubes, Carbon chemistry, Nanotubes, Carbon ultrastructure
- Abstract
We demonstrate the wafer-scale integration of single-electron memories based on carbon nanotube field-effect transistors (CNFETs) using a process based entirely on self assembly. First, a "dry" self-assembly step based on chemical vapor deposition (CVD) allows the growth and connection of CNFETs. Next, a "wet" self-assembly step is used to attach a single 30-nm-diameter gold bead in the nanotube vicinity via chemical functionalization. The bead is used as the memory storage node while the CNFET operating in the subthreshold regime acts as an electrometer exhibiting exponential gain. Below 60 K, the transfer characteristics of gold-CNFETs show highly reproducible hysteretic steps. Evaluation of the capacitance confirms that these current steps originate from the controlled storage of single electrons with a retention time that exceeds 550 s at 4 K.
- Published
- 2006
- Full Text
- View/download PDF
Catalog
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.