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In this article, we report on the charge-transport characteristics of a new quaternary material Cd1-xZnxTe1-ySey (CZTS) grown by the Traveling Heater Method (THM). The as-grown CZTS material was found to possess fewer Te inclusions than CZT†. Moreover, high resistivity of ∼1-2x1010 ohm-cm was achieved, meeting the requirements of most gamma-ray detector applications. The mobility-lifetime product for electrons [(μτ)e] was measured to be ∼4x10-3 cm2/V. The energy resolution for the quasi-hemispherical detector fabricated from the as-grown CZTS ingot obtained was ∼2.8% (FWHM) at 662 keV.

We grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction. The composition was found to be uniform along the growth direction. The achieved resistivity was 1-2.5 x1010 ohm-cm with a mobility-lifetime (μτ) product value for electrons of ∼1.7x10-3 cm2/V. An energy resolution of ∼7.5% at 662 keV was achieved for a 9-mm long Frisch grid detector fabricated from an ingot grown using as-received starting materials.

The large mismatch of the coefficients of thermal expansion (CTE) between the metal contact and CdZnTe exerts thermal stress at the metal/CZT interface, which causes mechanical degradation of the contact in addition to the poor adhesion of the metallic thin film to CZT. To form a reliable and stable interface, the contact material should have better adhesion and a close match of the coefficients of thermal expansion with CZT/CdTe. Here, we report on our investigations of a novel non-metallic contact layer for use in radiation detector applications. The proposed ZnO:Al contact layer offers better adhesion due to the oxide interface, higher hardness and better matching of the CTE with CZT. It has high prospects for a reliable and stable device structure that can serve as a replacement to the common metallic electrodes used today. We evaluated AZO contacts to CZT and extracted the electronic characteristics, such as resistivity and mobility-lifetime product of electrons, and compared the results of the same characterization measurements for CZT with gold contacts. The present observations showed that the characteristics of CZT detectors with AZO contacts are nearly identical to the same detectors with gold contacts.

With the global shortage of 3He gas, researchers worldwide are looking for alternative materials for detecting neutrons. Among the candidate materials, semiconductors are attractive because of their light weight and ease in handling. Currently, we are looking into the suitability of boron arsenide (B12As2) for this specific application. As the first step in evaluating the material qualitatively, the photo-response of B12As2 bulk crystals to light with different wavelengths was examined. The crystals showed photocurrent response to a band of 407- and 470- nm blue light. The maximum measured photoresponsivity and the photocurrent density at 0.7 V for 470 nm blue light at room temperature were 0.25 A ⋅ W−1 and 2.47 mA ⋅ cm−2, respectively. In addition to photo current measurements, the electrical properties as a function of temperature (range: 50-320 K) were measured. Reliable data were obtained for the low-temperature I-V characteristics, the temperature dependence of dark current and its density, and the resistivity variations with temperature in B12As2 bulk crystals. The experiments showed an exponential dependence on temperature for the dark current, current density, and resistivity; these three electrical parameters, respectively, had a variation of a few nA to μA, 1-100 μA ⋅ cm−2 and 7.6x105-7.7x103 Ω ⋅ cm, for temperature increasing from 50 K to 320 K. The results from this study reported the first photoresponse and demonstrated that B12As2 is a potential candidate for thermal-neutron detectors.

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

We obtained high-quality CdTexSe1−x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ∼1.0. This high uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional CdxZn1−xTe (CdZnTe or CZT).

In developing countries, seasonal labour migration from rural to urban or from backward to developed region is a household livelihood strategy to cope with poverty. In this process, the children of those migrants are the worst affected whether they accompany their parents or are left behind in the villages. The present paper explores the impact of temporary labour migration of parent(s) on school attendance of the children between 6–14 years and their dropping out from the school through an analysis of the cases from both the ends of migration stream in India. Data was collected from thirteen construction sites of Varanasi Uttar Pradesh and nine villages of Bihar by applying both qualitative and quantitative techniques. It is evident from the study that the migrants through remittances improve school accessibility for the left behind children and bridge gender gap in primary school education. However, among the accompanying migrant children of construction workers, many remain out of school and many are forced to drop out and some of them become vulnerable to work as child labour due to seasonal mobility of their parents. Thus, mainstreaming these children in development process is a big challenge in attaining the goal of universal primary education and inclusive growth in the country like India. Key words: School dropout, seasonal labour migration, left behind children, caste system, poverty, Eastern Uttar Pradesh and Bihar, India