Charge-transport properties of as-grown Cd1-xZnxTe1-ySey by the traveling heater method

In this article, we report on the charge-transport characteristics of a new quaternary material Cd1-xZnxTe1-ySey (CZTS) grown by the Traveling Heater Method (THM). The as-grown CZTS material was found to possess fewer Te inclusions than CZT†. Moreover, high resistivity of ∼1-2x1010 ohm-cm was achieved, meeting the requirements of most gamma-ray detector applications. The mobility-lifetime product for electrons [(μτ)e] was measured to be ∼4x10-3 cm2/V. The energy resolution for the quasi-hemispherical detector fabricated from the as-grown CZTS ingot obtained was ∼2.8% (FWHM) at 662 keV.