Search

Since the early days of the investigation on resistive switching (RS), the independence of the ON-state resistance with actual cell area has been a trademark of filamentary-switching. However, with the continuous downscaling of the memory cell down to 10 x 10 nm2 and below, the persistence of this phenomena raises intriguing questions on the conductive filaments (CFs) and its dimensions. Particularly, the cell functionality demonstrated at relatively high switching current (> 100 μA) implies a high current density (> 106 A/cm2) inside a CF supposedly confined in few hundreds on nm3. We previously demonstrated a methodology for the direct observation of CFs in integrated devices namely scalpel SPM, which overcomes most of the characterization challenges imposed by the device structure and the small CF lateral dimensions. In this letter, we use scalpel SPM to clarify the scaling potential of HfO2-based valence change memory (VCM) by characterization of CFs programmed at relatively high switching current and by AFM tip-induced RS experiments. Besides the demonstration of a remarkable scaling potential for the VCM technology, our results are also used to clarify the present understanding on the AFM-based experiments.

Cylindrical magnetic nanowires (NWs) have gained significant interest as building-blocks of spintronics devices and magnetic sensors thanks to their geometry-tunable magnetic properties and anisotropy. While the synthesis and compositional control of NWs have seen major improvements in recent years, considerable challenges remain for the characterization of local magnetic features at the nanoscale. Here, we demonstrate non-perturbative field distribution mapping and minimally invasive magnetic imaging with scanning nitrogen-vacancy magnetometry. This enables a sensitivity down to 3 μT Hz -1/2 used to localize ultra-scaled magnetic defects with lateral dimensions below 50 nm. The imaging reveals the presence of magnetic inhomogeneities in correspondence of periodical geometrical modulations/anti-notches in axial magnetized nanowires that are largely undetectable with standard metrology. The features induce local fluctuations of the NWs' magnetization orientation that are sensed by SNVM and compared with magnetic force microscopy. Finally, the strong magnetic field confinement in the nanowires is leveraged to study the interaction between the stray magnetic field and the fluorescence generated by two nitrogen-vacancies contained in the probe sensor, thus clarifying the contrast formation mechanisms.

The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into high-volume manufacturing as channel materials within the next decade, primarily in ultra-scaled and low-power devices. While their widespread adoption in advanced chip manufacturing is evolving, the need for diverse characterization methods is clear. This is necessary to assess structural, electrical, compositional, and mechanical properties to control and optimize 2D materials in mass-produced devices. Although the lab-to-fab transition remains nascent and a universal metrology solution is yet to emerge, rapid community progress underscores the potential for significant advancements. This paper reviews current measurement capabilities, identifies gaps in essential metrology for CMOS-compatible 2D materials, and explores fundamental measurement science limitations when applying these techniques in high-volume semiconductor manufacturing., Competing Interests: All authors declare no conflicts of interest or competing financial interests., (This journal is © The Royal Society of Chemistry.)

Two-dimensional materials (2DMs) have gained significant interest for resistive-switching memory toward neuromorphic and in-memory computing (IMC). To achieve atomic-level miniaturization, we introduce vertical hexagonal boron nitride (h-BN) memristors with graphene edge contacts. In addition to enabling three-dimensional (3D) integration (i.e., vertical stacking) for ultimate scalability, the proposed structure delivers ultralow power by isolating single conductive nanofilaments (CNFs) in ultrasmall active areas with negligible leakage thanks to atomically thin (∼0.3 nm) graphene edge contacts. Moreover, it facilitates studying fundamental resistive-switching behavior of single CNFs in CVD-grown 2DMs that was previously unattainable with planar devices. This way, we studied their programming characteristics and observed a consistent single quantum step in conductance attributed to unique atomically constrained nanofilament behavior in CVD-grown 2DMs. This resistive-switching property was previously suggested for h-BN memristors and linked to potential improvements in stability (robustness of CNFs), and now we show experimental evidence including superior retention of quantized conductance.

In this study, we comprehensively investigate the constant voltage stress (CVS) time-dependent breakdown and cycle-to-breakdown while considering metal-ferroelectric-metal (MFM) memory, which has distinct domain sizes induced by different doping species, i.e., Yttrium (Y) (Sample A) and Silicon (Si) (Sample B). Firstly, Y-doped and Si-doped HfO 2 MFM devices exhibit domain sizes of 5.64 nm and 12.47 nm, respectively. Secondly, Si-doped HfO 2 MFM devices (Sample B) have better CVS time-dependent breakdown and cycle-to-breakdown stability than Y-doped HfO 2 MFM devices (Sample A). Therefore, a larger domain size showing higher extrapolated voltage under CVS time-dependent breakdown and cycle-to-breakdown evaluations was observed, indicating that the domain size crucially impacts the stability of MFM memory.

The next generation of tunable photonics requires highly conductive and light inert interconnects that enable fast switching of phase, amplitude, and polarization modulators without reducing their efficiency. As such, metallic electrodes should be avoided, as they introduce significant parasitic losses. Transparent conductive oxides, on the other hand, offer reduced absorption due to their high bandgap and good conductivity due to their relatively high carrier concentration. Here, we present a metamaterial that enables electrodes to be in contact with the light active part of optoelectronic devices without the accompanying metallic losses and scattering. To this end, we use transparent conductive oxides and refractive index matched dielectrics as the metamaterial constituents. We present the metamaterial construction together with various characterization techniques that confirm the desired optical and electrical properties.

Quantum effects in novel functional materials and new device concepts represent a potential breakthrough for the development of new information processing technologies based on quantum phenomena. Among the emerging technologies, memristive elements that exhibit resistive switching, which relies on the electrochemical formation/rupture of conductive nanofilaments, exhibit quantum conductance effects at room temperature. Despite the underlying resistive switching mechanism having been exploited for the realization of next-generation memories and neuromorphic computing architectures, the potentialities of quantum effects in memristive devices are still rather unexplored. Here, a comprehensive review on memristive quantum devices, where quantum conductance effects can be observed by coupling ionics with electronics, is presented. Fundamental electrochemical and physicochemical phenomena underlying device functionalities are introduced, together with fundamentals of electronic ballistic conduction transport in nanofilaments. Quantum conductance effects including quantum mode splitting, stability, and random telegraph noise are analyzed, reporting experimental techniques and challenges of nanoscale metrology for the characterization of memristive phenomena. Finally, potential applications and future perspectives are envisioned, discussing how memristive devices with controllable atomic-sized conductive filaments can represent not only suitable platforms for the investigation of quantum phenomena but also promising building blocks for the realization of integrated quantum systems working in air at room temperature., (© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.)

Magnetic nanowires (NWs) are essential building blocks of spintronics devices as they offer tunable magnetic properties and anisotropy through their geometry. While the synthesis and compositional control of NWs have seen major improvements, considerable challenges remain for the characterization of local magnetic features at the nanoscale. Here, we demonstrate nonperturbative field distribution mapping in ultrascaled magnetic nanowires with diameters down to 6 nm by scanning nitrogen-vacancy magnetometry. This enables localized, minimally invasive magnetic imaging with sensitivity down to 3 μT Hz -1/2 . The imaging reveals the presence of weak magnetic inhomogeneities inside in-plane magnetized nanowires that are largely undetectable with standard metrology and can be related to local fluctuations of the NWs' saturation magnetization. In addition, the strong magnetic field confinement in the nanowires allows for the study of the interaction between the stray magnetic field and the nitrogen-vacancy sensor, thus clarifying the contrasting formation mechanisms for technologically relevant magnetic nanostructures.

The success of semiconductor electronics is built on the creation of compact, low-power switching elements that offer routing, logic and memory functions. The availability of nanoscale optical switches could have a similarly transformative impact on the development of dynamic and programmable metasurfaces, optical neural networks and quantum information processing. Phase-change materials are uniquely suited to enable their creation as they offer high-speed electrical switching between amorphous and crystalline states with notably different optical properties. Their high refractive index has already been harnessed to fashion them into compact optical antennas. Here, we take the next important step, by showing electrically-switchable phase-change antennas and metasurfaces that offer strong, reversible, non-volatile, multi-phase switching and spectral tuning of light scattering in the visible and near-infrared spectral ranges. Their successful implementation relies on a careful joint thermal and optical optimization of the antenna elements that comprise a silver strip that simultaneously serves as a plasmonic resonator and a miniature heating stage. Our metasurface affords electrical modulation of the reflectance by more than fourfold at 755 nm.

Hafnium oxide (HfO 2 )-based ferroelectrics offer remarkable promise for memory and logic devices in view of their compatibility with traditional silicon complementary metal oxide semiconductor (CMOS) technology, high switchable polarization, good endurance, and thickness scalability. These factors have led to a steep rise in the level of research on HfO 2 over the past number of years. While measurements on capacitors are promising for understanding macroscopic effects, many open questions regarding the emergence of ferroelectricity and electric field cycling behaviors remain. Continued progress requires information regarding the nanoscale ferroelectric behaviors on the bare surface (i.e., without encapsulation), which is notably absent. To overcome this barrier, we have applied complementary modes of piezoresponse force microscopy with the goal of directly and quantitatively sensing nanoscale ferroelectric behaviors in bare HfO 2 thin films. Our results on 8 nm Si-doped HfO 2 reveal nanoscale domains of local remnant polarization states exhibiting a weak piezoelectric coupling ( d eff ) in the range 0.6-1.5 pm/V. While we observed localized enhancement of d eff during progressive stressing of the bare HfO 2 thin film, we did not detect stable polarization switching which is a prerequisite of ferroelectric switching. This result could be explained using polarization switching spectroscopy which revealed antiferroelectric-like switching in the form of pinched hysteresis loops as well as increasing remnant response with repeated cycling. As such, our results offer a promising route for material scientists who want to explore the nanoscale origins of antiferroelectricity and ferroelectric wakeup in HfO 2 .

The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to overcome the existing problems of perovskite-based integrated ferroelectrics. However, both the control of ferroelectricity in doped-HfO 2 and the direct characterization at the nanoscale of ferroelectric phenomena, are increasingly difficult to achieve. The main limitations are imposed by the inherent intertwining of ferroelectric and dielectric properties, the role of strain, interfaces and electric field-mediated phase, and polarization changes. In this work, using Si-doped HfO 2 as a material system, we performed a correlative study with four scanning probe techniques for the local sensing of intrinsic ferroelectricity on the oxide surface. Putting each technique in perspective, we demonstrated that different origins of spatially resolved contrast can be obtained, thus highlighting possible crosstalk not originated by a genuine ferroelectric response. By leveraging the strength of each method, we showed how intrinsic processes in ultrathin dielectrics, i.e., electronic leakage, existence and generation of energy states, charge trapping (de-trapping) phenomena, and electrochemical effects, can influence the sensed response. We then proceeded to initiate hysteresis loops by means of tip-induced spectroscopic cycling (i.e., "wake-up"), thus observing the onset of oxide degradation processes associated with this step. Finally, direct piezoelectric effects were studied using the high pressure resulting from the probe's confinement, noticing the absence of a net time-invariant piezo-generated charge. Our results are critical in providing a general framework of interpretation for multiple nanoscale processes impacting ferroelectricity in doped-hafnia and strategies for sensing it.

Recent advances in machine learning (ML) offer new tools to extract new insights from large data sets and to acquire small data sets more effectively. Researchers in nanoscience are experimenting with these tools to tackle challenges in many fields. In addition to ML's advancement of nanoscience, nanoscience provides the foundation for neuromorphic computing hardware to expand the implementation of ML algorithms. In this Mini Review, we highlight some recent efforts to connect the ML and nanoscience communities by focusing on three types of interaction: (1) using ML to analyze and extract new insights from large nanoscience data sets, (2) applying ML to accelerate material discovery, including the use of active learning to guide experimental design, and (3) the nanoscience of memristive devices to realize hardware tailored for ML. We conclude with a discussion of challenges and opportunities for future interactions between nanoscience and ML researchers.

Quantitative scanning spreading resistance microscopy is currently a powerful method for carrier profiling in scaled nanoelectronic devices. Faced with the further reduction of dimensions and increasing architecture complexity, a force modulation method was developed to address the challenges associated with parasitic series resistances. Called fast Fourier transform scanning spreading resistance microscopy, the method has been shown to increase dynamic range when profiling Si devices and retains the doping contrast even in the presence of a series resistance. In this work we systematically investigate the potential of fast Fourier transform scanning spreading resistance microscopy for Ge, GaAs, InP, and InGaAs, presenting a quantitative comparison with Si as well as a more in-depth understanding of the capabilities and limitations of the method. Our results show that both GaAs and InP greatly benefit, with a significantly larger dynamic range and the ability to filter undesired series resistances. Doping concentration contrast in the presence of a series resistance can also be maintained in Ge but with high noise. For InGaAs there are only minor benefits. These findings prove that fast Fourier transform scanning spreading resistance microscopy is a valuable extension to regular scanning spreading resistance microscopy for more accurate carrier profiling in Si and non-Si materials, especially in architectures where parasitic series resistances are present., (Copyright © 2019 Elsevier B.V. All rights reserved.)

Two-dimensional transition metal dichalcogenides have been the focus of intense research for their potential application in novel electronic and optoelectronic devices. However, growth of large area two-dimensional transition metal dichalcogenides invariably leads to the formation of grain boundaries that can significantly degrade electrical transport by forming large electrostatic barriers. It is therefore critical to understand their effect on the electronic properties of two-dimensional semiconductors. Using MoS 2 as an example material, we are able to probe grain boundaries in top and buried layers using conductive atomic force microscopy. We find that the electrical radius of the grain boundary extends approximately 2 nm from the core into the pristine material. The presence of grain boundaries affects electrical conductivity not just within its own layer, but also in the surrounding layers. Therefore, electrical grain size is always smaller than the physical size, and decreases with increasing thickness of the MoS 2 . These results signify that the number of layers in synthetically grown 2D materials must ideally be limited for device applications.

The rapid cadence of MOSFET scaling is stimulating the development of new technologies and accelerating the introduction of new semiconducting materials as silicon alternative. In this context, 2D materials with a unique layered structure have attracted tremendous interest in recent years, mainly motivated by their ultra-thin body nature and unique optoelectronic and mechanical properties. The development of scalable synthesis techniques is obviously a fundamental step towards the development of a manufacturable technology. Metal-organic chemical vapor deposition has recently been used for the synthesis of large area TMDs, however, an important milestone still needs to be achieved: the ability to precisely control the number of layers and surface uniformity at the nano-to micro-length scale to obtain an atomically flat, self-passivated surface. In this work, we explore various fundamental aspects involved in the chemical vapor deposition process and we provide important insights on the layer-dependence of epitaxial MoS 2 film's structural properties. Based on these observations, we propose an original method to achieve a layer-controlled epitaxy of wafer-scale TMDs.

Next generation Li-ion batteries require improved energy densities, power output and safety to satisfy the demands of emerging technologies. All solid state 3D thin-film batteries (ASB) based on nanoionics are considered as frontrunners to enable all this. In order to facilitate the introduction of this new architecture, a homogeneous electrochemical activity and a high ionic diffusivity of the electrodes is key. However, nanometer-resolved techniques to probe structural, electrical and electrochemical properties of the battery components are still limited. Here we propose a study that combines conductive atomic force microscopy (C-AFM) and secondary ion mass spectrometry (SIMS) for structural and electrical characterization. In addition, a novel concept called ion-modulated C-AFM (imC-AFM) is introduced to also sense the electrochemical activity of ions in confined volumes. Using the aforementioned methodologies, LixMn2O4 thin film cathodes are studied observing: (1) a direct correlation between electrical conductivity and local chemistry. (2) A non-uniform Li-ion electrochemical activity (i.e. ionic conductivity) on the cathode's surface with a clear enhancement in grain boundaries (GBs). Finally, (3) imC-AFM observes a high volume expansion associated with high Li incorporation. This work introduces a novel pathway for the rapid analysis of materials to be used in ASB.

The continuous demand for improved performance in energy storage is driving the evolution of Li-ion battery technology toward emerging battery architectures such as 3D all-solid-state microbatteries (ASB). Being based on solid-state ionic processes in thin films, these new energy storage devices require adequate materials analysis techniques to study ionic and electronic phenomena. This is key to facilitate their commercial introduction. For example, in the case of cathode materials, structural, electrical and chemical information must be probed at the nanoscale and in the same area, to identify the ionic processes occurring inside each individual layer and understand the impact on the entire battery cell. In this work, we pursue this objective by using two well established nanoscale analysis techniques namely conductive atomic force microscopy (C-AFM) and secondary ion mass spectrometry (SIMS). We present a platform to study Li-ion composites with nanometer resolution that allows one to sense a multitude of key characteristics including structural, electrical and chemical information. First, we demonstrate the capability of a biased AFM tip to perform field-induced ionic migration in thin (cathode) films and its diagnosis through the observation of the local resistance change. The latter is ascribed to the internal rearrangement of Li-ions under the effect of a strong and localized electric field. Second, the combination of C-AFM and SIMS is used to correlate electrical conductivity and local chemistry in different cathodes for application in ASB. Finally, a promising starting point towards quantitative electrochemical information starting from C-AFM is indicated.

After the successful introduction as a replacement for the SiO2 gate dielectric in metal-oxide-semiconductor field-effect transistors, HfO2 is currently one of the most studied binary oxide systems with ubiquitous applications in nanoelectronics. For years, the interest of microelectronic downscaling has focused on tuning the dielectric constant of HfO2, particularly for monoclinic and tetragonal phases. Recently, Müller et al. showed the occurrence of ferroelectricity in orthorhombic HfO2 obtained by doping with Si, Y or Al which can alter the centrosymmetric atomic structure of the elemental binary oxide. Ferroelectric HfO2 is characterized by a permanent electric dipole that can be reversed through the application of an external voltage. As all ferroelectrics, a strong coupling between the polarization and the deformation exists, a property which has allowed the development of piezoelectric sensors and actuators. However, ferroelectrics also show a coupling between the electrical polarization and the deformation gradient, defined as flexoelectricity. In essence, the free charge inside the material redistributes in response to strain gradients, inducing a net non-zero dipole moment, eventually reaching polarization reversal by the sole application of a mechanical stress. Here we show the flexoelectric effect in Al-doped hafnium oxide, using the tip of an atomic force microscope (AFM) to maximize the strain gradient at the nanometre scale. Our analysis indicates that pure mechanical force can be used for the local polarization control of sub-100 nm domains. Due to the full compatibility of HfO2 in the modern CMOS process, the discovery of flexoelectricity in hafnia paves the way for (1) nanoscopic memory bits that can be written mechanically and read electrically, (2) tip-induced reprogrammable ferroelectric-based logic and (3) electromechanical transducers.

In this paper, we report on the use of CuInX 2 (X = Te, Se, S) as a cation supply layer in filamentary switching applications. Being used as absorber layers in solar cells, we take advantage of the reported Cu ionic conductivity of these materials to investigate the effect of the chalcogen element on filament stability. In situ X-ray diffraction showed material stability attractive for back-end-of-line in semiconductor industry. When integrated in 580 μm diameter memory cells, more volatile switching was found at low compliance current using CuInS 2 and CuInSe 2 compared to CuInTe 2 , which is ascribed to the natural tendency for Cu to diffuse back from the switching layer to the cation supply layer because of the larger difference in electrochemical potential using Se or S. Low-current and scaled behavior was also confirmed using conductive atomic force microscopy. Hence, by varying the chalcogen element, a method is presented to modulate the filament stability.

Wear mechanisms including fracture and plastic deformation at the nanoscale are central to understand sliding contacts. Recently, the combination of tip-induced material erosion with the sensing capability of secondary imaging modes of AFM, has enabled a slice-and-view tomographic technique named AFM tomography or Scalpel SPM. However, the elusive laws governing nanoscale wear and the large quantity of atoms involved in the tip-sample contact, require a dedicated mesoscale description to understand and model the tip-induced material removal. Here, we study nanosized sliding contacts made of diamond in the regime whereby thousands of nm 3 are removed. We explore the fundamentals of high-pressure tip-induced material removal for various materials. Changes in the load force are systematically combined with AFM and SEM to increase the understanding and the process controllability. The nonlinear variation of the removal rate with the load force is interpreted as a combination of two contact regimes each dominating in a particular force range. By using the gradual transition between the two regimes, (1) the experimental rate of material eroded on each tip passage is modeled, (2) a controllable removal rate below 5 nm/scan for all the materials is demonstrated, thus opening to future development of 3D tomographic AFM.

The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering limits such as heat dissipation, carrier mobility and fault tolerance thresholds. At present, it is unclear which are the best measurement methods needed to evaluate the nanometre-scale features of such devices and how the fundamental limits will affect the required metrology. Here, we review state-of-the-art dimensional metrology methods for integrated circuits, considering the advantages, limitations and potential improvements of the various approaches. We describe how integrated circuit device design and industry requirements will affect lithography options and consequently metrology requirements. We also discuss potentially powerful emerging technologies and highlight measurement problems that at present have no obvious solution.

A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal layer is often referred to as oxygen exchange layer (OEL) and is introduced between one of the electrodes and the oxide. The OEL is believed to induce a distributed reservoir of defects at the metal-insulator interface thus providing an unlimited availability of building blocks for the conductive filament (CF). However, its role remains elusive and controversial owing to the difficulties to probe the interface between the OEL and the CF. Here, using Scalpel SPM we probe multiple functions of the OEL which have not yet been directly measured, for two popular VCMs material systems: Hf/HfO 2 and Ta/Ta 2 O 5 . We locate and characterize in three-dimensions the volume containing the oxygen exchange layer and the CF with nanometer lateral resolution. We demonstrate that the OEL induces a thermodynamic barrier for the CF and estimate the minimum thickness of the OEL/oxide interface to guarantee the proper switching operations is ca. 3 nm. Our experimental observations are combined to first-principles thermodynamics and defect kinetics to elucidate the role of the OEL for device optimization.

The electrochemical reactions triggering resistive switching in conductive-bridge resistive random access memory (CBRAM) are spatially confined in few tens of nm(3). The formation and dissolution of nanoscopic Cu-filaments rely on the displacement of ions in such confined volume, and it is driven by the electric field induced ion migration and nanoscaled redox reactions. The stochastic nature of these fundamental processes leads to a large variability of the device performance. In this work, a combination of two- and three-dimensional scanning probe microscopy (SPM) techniques are used to study the conductive filament (CF) formation, rupture and its nanoscopic structural rearrangements. The high spatial confinement of our approach enables to locally induce RS in a confined area and image it in 3D. A conical shape of the CF is consistently observed, indicating that the ion migration is the rate limiting step in the filament formation when using high quality dielectrics as switching layers. The sub-10 nm electrical contact size of the AFM tip is used to study the filament's dissolution and detect the hopping conduction of Cu during the CF rupture. We consistently observe a tunnel gap formation associated with the tip-induced filament reset. Finally, aiming to match the fundamental understanding with the integrated device operations, we apply scalpel SPM to failed memory cells and directly observe the appearance of filament multiplicity as a major source of failures and variability in CBRAM.

Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic. Currently accepted models explain the resistive switching in these devices through the presence/absence of a conductive filament (CF) that is described as a reversible nanosized valence-change in an oxide material. During device operation, the CF cycles billion of times at subnanosecond speed, using few tens of microamperes as operating current and thus determines the whole device's performance. Despite its importance, the CF observation is hampered by the small filament size and its minimal compositional difference with the surrounding material. Here we show an experimental solution to this problem and provide the three-dimensional (3D) characterization of the CF in a scaled device. For this purpose we have recently developed a tomography technique which combines the high spatial resolution of scanning probe microscopy with subnanometer precision in material removal, leading to a true 3D-probing metrology concept. We locate and characterize in three-dimensions the nanometric volume of the conductive filament in state-of-the-art bipolar oxide-based devices. Our measurements demonstrate that the switching occurs through the formation of a single conductive filament. The filaments exhibit sizes below 10 nm and present a constriction near the oxygen-inert electrode. Finally, different atomic-size contacts are observed as a function of the programming current, providing evidence for the filament's nature as a defects modulated quantum contact.

The formation and rupture of conductive filaments (CFs) inside an insulating medium is used as hardware encoding of the state of a memory cell ("1" - "0") in filamentary-based conductive bridging memories. Currently accepted models explain the filament erase (reset) as the subtraction of conductive metal atoms from the CF; however, they do not fully account for the rich set of phenomena experimentally observed during the reset. The details of the filament erase are unraveled on the nanometer scale by means of an atomic force microscopy-based tomography technique enabling the 3D observation of erased CFs. "Non-broken" and "broken" CFs are observed, whereby the increase in resistance originates, respectively, from a constriction point in the current path and from an interrupted CF. We demonstrate that their existence and morphology can be related to the specific formation history of the CF, and we identify the physical volume of the CF as being mainly responsible for the type of filament erase.

On the development of flexible electronics, a highly flexible nonvolatile memory, which is an important circuit component for the portability, is necessary. However, the flexibility of existing nonvolatile memory has been limited, e.g. the smallest radius into which can be bent has been millimeters range, due to the difficulty in maintaining memory properties while bending. Here we propose the ultra flexible resistive nonvolatile memory using Ag-decorated cellulose nanofiber paper (CNP). The Ag-decorated CNP devices showed the stable nonvolatile memory effects with 6 orders of ON/OFF resistance ratio and the small standard deviation of switching voltage distribution. The memory performance of CNP devices can be maintained without any degradation when being bent down to the radius of 350 μm, which is the smallest value compared to those of existing any flexible nonvolatile memories. Thus the present device using abundant and mechanically flexible CNP offers a highly flexible nonvolatile memory for portable flexible electronics.

The basic unit of information in filamentary-based resistive switching memories is physically stored in a conductive filament. Therefore, the overall performance of the device is indissolubly related to the properties of such filament. In this Letter, we report for the first time on the three-dimensional (3D) observation of the shape of the conductive filament. The observation of the filament is done in a nanoscale conductive-bridging device, which is programmed under real operative conditions. To obtain the 3D-information we developed a dedicated tomography technique based on conductive atomic force microscopy. The shape and size of the conductive filament are obtained in three-dimensions with nanometric resolution. The observed filament presents a conical shape with the narrow part close to the inert-electrode. On the basis of this shape, we conclude that the dynamic filament-growth is limited by the cation transport. In addition, we demonstrate the role of the programming current, which clearly influences the physical-volume of the induced conductive filaments.

In the recent past, filamentary-based resistive switching devices have emerged as predominant candidates for future non-volatile memory storage. Most of the striking characteristics of these devices are still limited by the high power consumption and poor understanding of the intimate resistive switching mechanism. In this study, we present an atomic scale study of the filament formation in CuTe-Al2O3 by using a conductive scanning probe tip to analyse the shape and dimensions of the filament. Filaments studied were either created within a normal device or locally formed while using the tip as the top electrode. We demonstrate that it is possible to create with C-AFM a filament with a signature identical to a device (i.e. two orders of magnitude resistance window, 10(4) s retention operating at 5 μA). This is obtained by a dedicated material and resistance selection for the conductive tip. The filamentary mechanism of fully processed devices is demonstrated and observed by C-AFM. Filaments created with C-AFM can be repeatedly cycled and the ON state presents a 20 nm highly conductive spot which can be repeatedly turned into a poorly conductive path in the OFF state.