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An epitaxy-on-recoil-implanted-substrate (ERIS) technique is presented. The agglomeration of ERIS-grown silicide layers on polycrystalline Si is significantly suppressed likely from a reduced diffusivity due to oxygen in the grain boundaries.

Investigations conducted using transmission electron microscopy and diffraction were able to determine that molybdenum (Mo) does not have a role in altering the titanium-silicide reaction. Mo is credited instead for the reduction in the size of the grains of the C49-TiSi2 phase. That reaction leads to an increase in the nucleation density of the C54-TiSi2 phase and could account for the observed decline in the formation temperature.

The perturbance in the silicon vacancy concentration caused by the presence of TiSi2 films was examined using antimony silicon doping superlattices as a vacancy detector. An order of 1.5 relative vacancy supersaturation was observed in deposited titanium thickness 4-312 nm, 800-850-degrees celsius, 15-600 min. Vacancy injection mechanisms during titanium silicidation involve volume contraction and stress compensation.

Molecular beam epitaxy (MBE) and post-growth annealing were used to fabricate high-quality, uniform Si/NiSi2/Si(100) structures. A Si template method was incorporated into the fabrication process to ensure te epitaxial orientation of the Si nuclei and the MBE-grown Si overlayer. The structures were then characterized by transmission electron microscopy and Rutherford backscattering spectrometry. Results show that the proposed approach is capable of producing Si/NiSi2/Si(100) structures with excellent electrical transport behavior.

The structural and morphological characteristics of epitaxial NiSi2 thin films grown on an Si(100) substrate were investigated. The results showed that low-temperature codeposition and subsequent annealing at a temperature greater than 700 degrees celsius effectively eliminated line defects and faceting at the interface region. Interfacial faceting and interface domain boundary defects were associated with growth kinetics. Highly ordered surface reconstruction was observed in well-annealed films.

Coreless defects produced during silicide epitaxy on Si was investigated using high-resolution microscopy, electron diffraction and dark field imaging. The results showed that the coreless defects, which are used by thin films to avoid dislocation formation, are actually microtwins which have a thickness of approximately 4 atomic planes. The twins followed curved lines due to the influence of steps at the interface.

The Osvald simulated forward and reverse current-voltage and capacitance-voltage properties of inhomogeneous Schottky barrier diodes is examined.

The mechanisms responsible for electron conduction cannot be identified by the current transport characteristics observed at Schottky barrier junctions. The current voltage characteristics in the article by Z.Q. Shi and Anderson shows a dramatic increase in the Schottky barrier height when the temperature of deposition is lowered from the room temperature. This is in apparent disagreement with the Fermi pinning level concept.

Examines the silicide formation characteristics from composition profiles created on silicon by codeposition. Effect of thin interfacial amorphous titanium silicon layer to transformation temperature; Accommodation of the growth of C54TiSi[sub 2] by predeposition and preannealing; Efficacy of the interfacial layers.

Examines the oxide-mediated epitaxy of single-crystal CoSi[sub 2] on silicon. Area of silicide nucleation and growth; Effect of repeated growth sequence on single crystal thin film quality; Discussion on the role of thin oxide layer in promoting silicide epitaxial growth.

Investigates the influence of titanium disilicide and cobalt disilicide growth on silicon native point defects. Use of boron- and antimony-doped superlattice samples; Composition of the as-deposited films; Observation of the interstitial undersaturation and vacancy supersaturation; Analysis of the diffusing species during film growth.

Examines the surface nucleation of titanium (Ti) silicides at the surface of silicon (Si). Deposition of Ti at elevated temperatures on amorphous Si; Effects of temperature on the phases of the silicide layer; Growth of TiSi[sub 2] layers with the deposition of Ti.

Investigates the increased uniformity and thermal stability of cobalt silicate thin films through titanium (Ti) capping. Usage of metal silicide thin films in micro-electronic circuits; Role of Ti cap and Ti compound overlayer removal on the fabrication of uniform single-crystal layers; Uniform reaction of the silicide phases near the Si interface.

Examines the origin of current voltage measurement problems of metal semiconductor ohmic contacts on hydrogen terminated silicon substrates. Effects of acceptor passivation during silicon chemical etching; Influence of room temperature metal deposition on atomically clean, well-annealed p-type substrates on the active dopant profile.