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2. A process for high yield and high performance carbon nanotube field effect transistors

Author

Pei Jer Tzeng, Ming Jinn Tsai, Ching Chiun Wang, Tseng Chin Lee, and Bing-Yue Tsui

Subjects
Yield (engineering), Materials science, business.industry, Transconductance, Process (computing), Nanotechnology, Carbon nanotube, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Carbon nanotube field-effect transistor, CMOS, Nanoelectronics, law, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, business
Abstract

Carbon nanotube field effect transistors (CNTFETs) have been considered as one of the potential candidates for nanoelectronics beyond Si CMOS. However, it is not easy to have high performance CNTFETs with high yield currently. In this work, we proposed a local bottom-gate (LBG) CNTFETs combined with a novel device concept and optimized process technologies. High performance of CNTFET with low subthreshold swing of 139 mV/dec, high transconductance of 1.27 μS, and high Ion/Ioff ratio of 106 can be easily obtained with Ti source/drain contact after a post annealing process. Record high yield of 74% has been demonstrated. On the basis of the proposed process, lots of high performance CNTFETs can be obtained easily for advanced study on the electrical characteristics of CNTFETs in the future.

Published
2010

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