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A process for high yield and high performance carbon nanotube field effect transistors
- Source :
- Microelectronics Reliability. 50:666-669
- Publication Year :
- 2010
- Publisher :
- Elsevier BV, 2010.
-
Abstract
- Carbon nanotube field effect transistors (CNTFETs) have been considered as one of the potential candidates for nanoelectronics beyond Si CMOS. However, it is not easy to have high performance CNTFETs with high yield currently. In this work, we proposed a local bottom-gate (LBG) CNTFETs combined with a novel device concept and optimized process technologies. High performance of CNTFET with low subthreshold swing of 139 mV/dec, high transconductance of 1.27 μS, and high Ion/Ioff ratio of 106 can be easily obtained with Ti source/drain contact after a post annealing process. Record high yield of 74% has been demonstrated. On the basis of the proposed process, lots of high performance CNTFETs can be obtained easily for advanced study on the electrical characteristics of CNTFETs in the future.
- Subjects :
- Yield (engineering)
Materials science
business.industry
Transconductance
Process (computing)
Nanotechnology
Carbon nanotube
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Carbon nanotube field-effect transistor
CMOS
Nanoelectronics
law
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
business
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 50
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........34d3ff8f18ff504c662074ce48759e3c