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287 results on '"Tsatsulnikov, A. F."'

5. Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells

Author

Poltavtsev, S. V., Solovev, I. A., Akimov, I. A., Chaldyshev, V. V., Lundin, W. V., Sakharov, A. V., Tsatsulnikov, A. F., Yakovlev, D. R., and Bayer, M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We study the coherent dynamics of localized excitons in 100-periods of 2.5 nm thick (In,Ga)N/GaN quantum wells with 7.5% indium concentration, measured with spectroscopic resolution through two-pulse and three-pulse photon echoes at the temperature of 1.5 K. A long-lived coherent exciton dynamics is observed in the (In,Ga)N quantum wells: When the laser photon energy is tuned across the 43 meV-wide inhomogeneously broadened resonance line, the coherence time T2 varies between 45 and 255 ps, increasing with stronger exciton localization. The corresponding narrow homogeneous linewidths ranging from 5.2 to 29 {\mu}eV as well as the relatively weak exciton-phonon interaction (0.8 {\mu}eV/K) confirm a strong, quantum dot-like exciton localization in a static disordered potential inside the (In,Ga)N quantum well layers., Comment: 4 figs

Published
2018
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17. AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

Author

Sakharov, Alexei V., primary, Arteev, Dmitri S., additional, Zavarin, Evgenii E., additional, Nikolaev, Andrey E., additional, Lundin, Wsevolod V., additional, Prasolov, Nikita D., additional, Yagovkina, Maria A., additional, Tsatsulnikov, Andrey F., additional, Fedotov, Sergey D., additional, Sokolov, Evgenii M., additional, and Statsenko, Vladimir N., additional

Published
2023
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18. Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range.

Author

Lundin, V. V., Rodin, S. N., Sakharov, A. V., Tsatsulnikov, A. F., Lobanova, A. V., Bogdanov, M. V., Talalaev, R. A., Sun, Haiding, and Long, Shibing

Subjects
TEMPERATURE, GALLIUM nitride, PYROLYSIS, GALLIUM
Abstract

Study of Ga2O3 deposition by MOVPE using trimethylgallium and oxygen was performed in a wide temperature range. It was found that for Ga2O3 deposition rate vs temperature dependence is very close to the TMGa pyrolysis in nitrogen. Kinetically-limited range for these processes corresponds to 550–700°C, that is 150°C higher, then for GaN deposition in the same reactor. [ABSTRACT FROM AUTHOR]

Published
2023
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26. Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure.

Author

Shalygin, V. A., Moldavskaya, M. D., Vinnichenko, M. Ya., Maremyanin, K. V., Artemyev, A. A., Panevin, V. Yu., Vorobjev, L. E., Firsov, D. A., Korotyeyev, V. V., Sakharov, A. V., Zavarin, E. E., Arteev, D. S., Lundin, W. V., Tsatsulnikov, A. F., Suihkonen, S., and Kauppinen, C.

Subjects
MAXWELL equations, SUBMILLIMETER waves, HOT carriers, ELECTRON temperature, ELECTRIC fields
Abstract

Terahertz radiation emission from an electrically excited AlGaN/GaN heterostructure with a surface metal grating was studied under conditions of two-dimensional (2D) electron heating by the lateral electric field. Intensive peaks related to nonequilibrium 2D plasmons were revealed in the terahertz emission spectra with up to 4 times selective amplification of the radiation emission in the vicinity of 2D plasmon resonance. This selective emission was shown to be frequency-controllable by the grating period. Exact spectral positions of the 2D plasmon resonances were preliminarily experimentally detected with the help of equilibrium transmission spectra measured at various temperatures. The resonance positions are in a satisfactory agreement with the results of theoretical simulation of the transmission spectra performed using a rigorous solution of Maxwell's equations. The effective temperature of hot 2D electrons was determined by means of I – V characteristics and their analysis using the power balance equation. It was shown that for a given electric field, the effective temperature of nonequilibrium 2D plasmons is close to the hot 2D electron temperature. The work may have applications in GaN-based electrically pumped emitters of terahertz radiation. [ABSTRACT FROM AUTHOR]

Published
2019
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27. SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs.

Author

Kukushkin, Sergey A., Markov, Lev K., Pavlyuchenko, Alexey S., Smirnova, Irina P., Osipov, Andrey V., Grashchenko, Alexander S., Nikolaev, Andrey E., Sakharov, Alexey V., Tsatsulnikov, Andrey F., and Sviatets, Genadii V.

Subjects
FLIP chip technology, EPITAXIAL layers, ATOMS, EPITAXY, MANUFACTURING processes, HETEROSTRUCTURES
Abstract

This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional method, a new method involving the coordinated substitution of atoms (MCSA) to form the SiC layer is proposed. This new approach enables the growth of epitaxial GaN layers with low defect content and facilitates transfer to any surface. The paper details the technology of manufacturing LEDs on SiC/Si substrates obtained by the MCSA and elaborates on the benefits of using these substrates in LED production. Additionally, the advantages of the growth interface between SiC and Si materials are discussed. Moreover, it is found that thinner SiC layers (<200 nm) contribute to the scattering of the LED's own radiation in the heterostructure waveguide, which decreases its absorption by silicon. For flip-chip LEDs with the substrate removed, substrates with thicker SiC layers (~400 nm) and a growth porous layer of several microns at the SiC-Si interface is utilized to simplify Si substrate removal and enhance the manufacturing process's cost-effectiveness. [ABSTRACT FROM AUTHOR]

Published
2023
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40. Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes.

Author

Di Russo, E., Cherkashin, N., Korytov, M., Nikolaev, A. E., Sakharov, A. V., Tsatsulnikov, A. F., Bonef, B., Blum, I., Houard, J., Da Costa, G., Blavette, D., and Rigutti, L.

Subjects
ATOM-probe tomography, LIGHT emitting diodes, INDIUM gallium nitride, ELECTRON holography, LASER pulses
Abstract

Laser-assisted atom probe tomography (APT) and high-resolution dark-field electron holography (HR-DFEH) were performed to investigate the composition of a polar [0001] GaN/AlxGa1 − xN/InyGa1 − yN light emitting diode. In particular, the III-site fraction of both AlxGa1 − xN and InyGa1 − yN alloys was studied adopting a comparative approach. HR-DFEH allows mapping the projected strain with a subnanometer spatial resolution which is used for the calculation of the two-dimensional alloy composition distribution. APT provides three-dimensional alloys composition distribution with a nanometer spatial resolution. However, here we reveal that important inaccuracies affect local composition measurements. A Ga-poor composition is obtained in high DC-electric field regions. Moreover, such inaccuracies may be locally enhanced where the [0001] pole intersects the surface of the analyzed specimen, leading to a lower fraction of Ga measured. III-site fractions closer to the nominal values were measured at low field conditions. Ga loss is thought to be due to preferential DC field induced evaporation of Ga ions between laser pulses. This is explained in terms of formation of a metallic layer on the tip surface during APT analysis, where weak Ga-Ga bonds are formed, promoting the loss of Ga at high field conditions. [ABSTRACT FROM AUTHOR]

Published
2019
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42. Study of Ga2O3 deposition by MOCVD

Author

Lundin, W V, primary, Rodin, S N, additional, Sakharov, A V, additional, Yagovkina, M A, additional, Smirnov, A N, additional, Eliseyev, I A, additional, Davydov, V Yu, additional, and Tsatsulnikov, A F, additional

Published
2021
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