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Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range.
- Source :
- Technical Physics Letters; 2023 Suppl 4, Vol. 49, pS211-S214, 4p
- Publication Year :
- 2023
-
Abstract
- Study of Ga<subscript>2</subscript>O<subscript>3</subscript> deposition by MOVPE using trimethylgallium and oxygen was performed in a wide temperature range. It was found that for Ga<subscript>2</subscript>O<subscript>3</subscript> deposition rate vs temperature dependence is very close to the TMGa pyrolysis in nitrogen. Kinetically-limited range for these processes corresponds to 550–700°C, that is 150°C higher, then for GaN deposition in the same reactor. [ABSTRACT FROM AUTHOR]
- Subjects :
- TEMPERATURE
GALLIUM nitride
PYROLYSIS
GALLIUM
Subjects
Details
- Language :
- English
- ISSN :
- 10637850
- Volume :
- 49
- Database :
- Complementary Index
- Journal :
- Technical Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 176082331
- Full Text :
- https://doi.org/10.1134/S1063785023900807