109 results on '"Tsai, Kuen-Yu"'
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2. A transistor sizing method for standard-cell optimization considering lithography effects
3. Study of etching bias modeling and correction strategies for compensation of patterning process effects
4. Comparison of the vectorial diffraction theory and Fraunhofer approximation method on diffractive images of Fresnel zone plates
5. Silicon photodiodes for electron beam position and drift detection in scanning electron microscopy and electron beam lithography system
6. Investigation on helium ion beam lithography with proximity effect correction
7. Efficient electrical characteristics estimation techniques for sub-20-nm FDSOI integrated circuits with nonrectangular gate patterning effects
8. Precision fabrication of EUVL programmed defects with helium ion beam patterning
9. DQIT: [mu]-synthesis without D-scale fitting
10. IN-SITU FAULT DETECTION OF WAFER WARPAGE IN LITHOGRAPHY
11. Precision fabrication of EUVL programmed defects with helium ion beam lithography
12. Investigation on MBOPC convergence improvement with location-dependent correction factors aided by machine learning
13. Accuracy improvement of electrical characteristics estimation for sub-20nm FDSOI devices with non-rectangular gates
14. Model-based proximity effect correction for helium ion beam lithography
15. Heavy metal incorporated helium ion active hybrid non-chemically amplified resists: Nano-patterning with low line edge roughness
16. Fabrication of metrology test structures with helium ion beam direct write
17. Precision fabrication of EUVL programmed defects with helium ion beam lithography
18. Accuracy improvement of electrical characteristics estimation for sub-20nm FDSOI devices with non-rectangular gates
19. Supplementary zones-surrounded Fresnel zone plate with enhanced optical resolution
20. Design of an electron-optical system with a ball-tip emission source through a numerical optimization method for high-throughput electron-beam–direct-write lithography
21. Comparison of the vectorial diffraction theory and Fraunhofer approximation method on diffractive images of Fresnel zone plates
22. Optical scatterometry system for detecting specific line edge roughness of resist gratings subjected to detector noises
23. The Electrostatic Potential inside the Electron-Optical Systen with Periodic Boundary-Value Conditions
24. Simulation and Experiment of Speckle Reduction by the Beam Splitting Method on a Pico-Projection System
25. Direct-scatterometry-enabled PEC model calibration with two-dimensional layouts
26. Improvement in electron-beam lithography throughput by exploiting relaxed patterning fidelity requirements with directed self-assembly
27. Refractive Index and Effective Thickness Measurement System for the RGB Color Filter Coatings With Absorption and Scattering Properties
28. Supplementary Zones-surrounded Fresnel Zone Plate
29. Model-based proximity effect correction for helium ion beam lithography
30. Void-based photonic crystal mirror with high reflectivity and low dissipation for extreme-ultraviolet radiation
31. Solution-Refined Method for Electrostatic Potential Distribution of Large-Scale Electron Optics
32. Direct-scatterometry-enabled optical-proximity-correction-model calibration
33. Impacts of point spread function accuracy on patterning prediction and proximity effect correction in low-voltage electron-beam–direct-write lithography
34. The effect of NBTI on 3D integrated circuits
35. New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints
36. Electron-beam proximity effect model calibration for fabricating scatterometry calibration samples
37. Direct-scatterometry-enabled lithography model calibration
38. Impact of Process-Effect Correction Strategies on Variability of Critical Dimension and Electrical Characteristics in Extreme Ultraviolet Lithography
39. Stochastic simulation of photon propagation in Si for extreme-ultraviolet mask-defect inspection
40. Manufacturability Analysis of a Micro-Electro-Mechanical Systems–Based Electron-Optical System Design for Direct-Write Lithography
41. Fresnel Zone Plate Manufacturability Analysis for Direct-Write Lithography by Simulating Focusing and Patterning Performance versus Fabrication Errors
42. Stochastic simulation of photon scattering for EUV mask defect inspection
43. Architecture for next-generation massively parallel maskless lithography system (MPML2)
44. A non-delta-chrome OPC methodology for process models with three-dimensional mask effects
45. Model-based proximity effect correction for electron-beam direct-write lithography
46. High Spatial Resolution and Large Field Intensity by a Set of Two Modified Zone Plates
47. Using transmission line theory to calculate equivalent refractive index of EUV mask multilayer structures for efficient scattering simulation by finite-difference time-domain method
48. A fully model-based methodology for simultaneously correcting EUV mask shadowing and optical proximity effects with improved pattern transfer fidelity and process windows
49. Preliminary design of a two-dimensional electron beam position monitor system for multiple-electron-beam-direct-write lithography
50. A novel curve-fitting procedure for determining proximity effect parameters in electron beam lithography
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