169 results on '"Tlaczala, M."'
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2. Gallium Nitride Schottky Barriers and MSM UV Detectors
3. Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor
4. Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures
5. Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures
6. Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy
7. Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy
8. Study of grain boundaries influence on electrical properties of nitrides
9. Optimization of GaN nucleation layer deposition conditions on sapphire substrates in HVPE system
10. New nanocrystalline powder substrates for nitrides layer epitaxy
11. Properties of MOVPE GaN grown on ZnO deposited on Si(0 0 1) and Si(1 1 1) substrates
12. APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures
13. Functionally graded semiconductor layers for devices application
14. Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures
15. Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy
16. Micro-Raman study of photoexcited plasma in GaAs bevelled structures
17. Determination of doping concentrations in very thin GaAs layers using micro-Raman spectroscopy on bevelled samples
18. Photoreflectance study of p-type GaN layers
19. Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas
20. Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples
21. Investigation of MOVPE growth of silicon δ-doped GaAs epilayers and In xGa 1− xAs/GaAs strained quantum wells
22. Study of Gallium Nitride Films Grown by MOCVD
23. Critical Thickness Investigation of InxGa1-xAs/GaAs by X-Ray Measurements
24. Influence of crystallographic structure on electrical characteristics of (Al,Ga)N epitaxial layers grown by MOVPE method
25. Room temperature photoreflectance of different electron concentration GaN epitaxial layers
26. MOVPE technology and characterisation of silicon δ-doped GaAs and Al xGa 1− xAs
27. Photoreflectance investigations of GaN epitaxial layers
28. Distribution of the lateral correlation length in GaN epitaxial layers
29. Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
30. Photoreflectance study of δ-doped semiconductor layers by a fast Fourier transformation
31. Defect distribution in InGaAsN/GaAs multilayer solar cells
32. Electrical Characterization of inGaAsN/GaAs Heterostructures
33. 3D Photonic Technologies for Applications on a Chip and Optical Fiber
34. Application of Kramers-Kronig analysis to the photoreflectance spectra of heavily doped GaAs/Si-GaAs structures
35. Field emission from GaN deposited on the (100) Si substrate
36. DLTFS study of InGaAs/AlInAs heterostructures grown on n-InP:S substrates
37. GaAs-based photodetector with applied PDMS membrane with photonic crystal in the surface
38. Technology of ZnO nanofibers based devices
39. Investigation of the epitaxial growth of AIIIBV-N heterostructures for solar cell applications
40. Growth and characterization of algan/gan heterostructures for electronic devices and sensors
41. New fabrication approach to ZnO multiple nanofiber sensors
42. DLTS study of electrically active defects in triple quantum well InGaAsN/GaAs heterostructures
43. Deep levels in InGaAsN/GaAs and InGaAs/GaAs heterojunctions
44. Low temperature investigation of electrical and optical properties of InGaAsN/Gas QW Schottky barrier photodetectors
45. Surface potential measurements of a single ZnO nanofiber
46. Investigation of deep energy levels in heterostructures based on GaN by DLTS
47. Reactive ion etching of AlxGa1−xN/GaN heterostructure using Cl2, BCl3/Ar gas plasma
48. Inter-digitated AlGaN/GaN Schottky diode for monolithic integration
49. MOVPE Technology and Characterisation of Silicon delta-Doped GaAs and A1(x)Ga(1-x)As
50. Properties of MOVPE GaN grown on ZnO deposited on Si(001) and Si(111) substrates
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