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Mott-Hubbard and Hund electron correlations have been realized thus far in separate classes of materials. Here, we show that a single moir\'e homobilayer encompasses both kinds of physics in a controllable manner. We develop a microscopic multiband model that we solve by dynamical mean-field theory to nonperturbatively address the local many-body correlations. We demonstrate how tuning with twist angle, dielectric screening, and hole density allows us to switch between Mott-Hubbard and Hund correlated states in a twisted WSe$_2$ bilayer. The underlying mechanism is based on controlling Coulomb-interaction-driven orbital polarization and the energetics of concomitant local singlet and triplet spin configurations. From a comparison to recent experimental transport data, we find signatures of a filling-controlled transition from a triplet charge-transfer insulator to a Hund-Mott metal. Our finding establishes twisted transition metal dichalcogenides as a tunable platform for exotic phases of quantum matter emerging from large local spin moments.

Charge-density waves are responsible for symmetry-breaking displacements of atoms and concomitant changes in the electronic structure. Linear response theories, in particular density-functional perturbation theory, provide a way to study the effect of displacements on both the total energy and the electronic structure based on a single ab initio calculation. In downfolding approaches, the electronic system is reduced to a smaller number of bands, allowing for the incorporation of additional correlation and environmental effects on these bands. However, the physical contents of this downfolded model and its potential limitations are not always obvious. Here, we study the potential-energy landscape and electronic structure of the Su-Schrieffer-Heeger (SSH) model, where all relevant quantities can be evaluated analytically. We compare the exact results at arbitrary displacement with diagrammatic perturbation theory both in the full model and in a downfolded effective single-band model, which gives an instructive insight into the properties of downfolding. An exact reconstruction of the potential-energy landscape is possible in a downfolded model, which requires a dynamical electron-biphonon interaction. The dispersion of the bands upon atomic displacement is also found correctly, where the downfolded model by construction only captures spectral weight in the target space. In the SSH model, the electron-phonon coupling mechanism involves exclusively hybridization between the low- and high-energy bands and this limits the computational efficiency gain of downfolded models., Comment: Submission to SciPost. Python file to generate the plots included in the arxiv source

Superconductivity arises mostly at energy and temperature scales that are much smaller than the typical bare electronic energies. Since the computational effort of diagrammatic many-body techniques increases with the number of required Matsubara frequencies and thus with the inverse temperature, phase transitions that occur at low temperatures are typically hard to address numerically. In this work, we implement a fluctuation exchange (FLEX) approach to spin fluctuations and superconductivity using the ``intermediate representation basis'' (IR) [Shinaoka et al., Phys. Rev. B 96, 035147 (2017)] for Matsubara Green functions. This $\mathrm{FLEX}+\mathrm{IR}$ approach is numerically very efficient and enables us to reach temperatures on the order of ${10}^{\ensuremath{-}4}$ in units of the electronic bandwidth in multiorbital systems. After benchmarking the method in the doped repulsive Hubbard model on the square lattice, we study the possibility of spin-fluctuation-mediated superconductivity in the hydrated sodium cobalt material ${\mathrm{Na}}_{x}{\mathrm{CoO}}_{2}\ifmmode\cdot\else\textperiodcentered\fi{}{y\mathrm{H}}_{2}\mathrm{O}$ reaching the scale of the experimental transition temperature ${T}_{\mathrm{c}}=4.5\phantom{\rule{0.16em}{0ex}}\mathrm{K}$ and below.

Constrained electronic-structure theories enable the construction of effective low-energy models consisting of partially dressed particles. However, the interpretation and physical content of these theories is not straightforward. Here, we carefully explore the properties of downfolding theories for electron-ion problems, in particular constrained density-functional perturbation theory (cDFPT). We show that the dipole selection rules determine whether the partially dressed phonons satisfy Goldstone's theorem, and we prove that electronic screening always lowers the phonon frequencies. We illustrate the theory with cDFPT calculations for minimal example systems: the nitrogen and benzene molecule as well as graphene., Comment: Revised manuscript with new appendix and ancillary scripts and data

The many-body theory of interacting electrons poses an intrinsically difficult problem that requires simplifying assumptions. For the determination of electronic screening properties of the Coulomb interaction, the Random Phase Approximation (RPA) provides such a simplification. Here, we explicitly show that this approximation is justified for band structures with sizeable band gaps. This is when the electronic states responsible for the screening are energetically far away from the Fermi level, which is equivalent to a short electronic propagation length of these states. The RPA contains exactly those diagrams in which the classical Coulomb interaction covers all distances, whereas neglected vertex corrections involve quantum tunneling through the barrier formed by the band gap. Our analysis of electron-electron interactions provides a real-space analogy to Migdal's theorem on the smallness of vertex corrections in electron-phonon problems. An important application is the increasing use of constrained Random Phase Approximation (cRPA) calculations of effective interactions. We find that their usage of Kohn-Sham energies already accounts for the leading local (excitonic) vertex correction in insulators.

In the standard model of charge density wave (CDW) transitions, the displacement along a single phonon mode lowers the total electronic energy by creating a gap at the Fermi level, making the CDW a metal–insulator transition. Here, using scanning tunneling microscopy and spectroscopy and ab initio calculations, we show that VS2 realizes a CDW which stands out of this standard model. There is a full CDW gap residing in the unoccupied states of monolayer VS2. At the Fermi level, the CDW induces a topological metal-metal (Lifshitz) transition. Non-linear coupling of transverse and longitudinal phonons is essential for the formation of the CDW and the full gap above the Fermi level. Additionally, x-ray magnetic circular dichroism reveals the absence of net magnetization in this phase, pointing to coexisting charge and spin density waves in the ground state. A charge density wave (CDW) normally creates a gap at the Fermi level, inducing a metal-insulator transition. Here, the authors report that a CDW gap resides in the unoccupied states but induces a topological metal-metal transition at the Fermi level in monolayer VS2.

We study the influence of ferromagnetic nonlocal exchange on correlated electrons in terms of an SU(2)-Hubbard-Heisenberg model and address the interplay of on-site interaction induced local moment formation and the competition of ferromagnetic direct and antiferromagnetic kinetic exchange interactions. In order to simulate thermodynamic properties of the system in a way that largely accounts for the on-site interaction driven correlations in the system, we advance the correlated variational scheme introduced in [M. Sch\"uler et al., Phys. Rev. Lett. 111, 036601 (2013)] to account for explicitly symmetry broken electronic phases by introducing an auxiliary magnetic field. After benchmarking the method against exact solutions of a finite system, we study the SU(2) Hubbard-Heisenberg model on a square lattice. We obtain the $U\ensuremath{-}J$ finite temperature phase diagram of a SU(2)-Hubbard-Heisenberg model within the correlated variational approach and compare it to static mean-field theory. While the generalized variational principle and static mean-field theory yield transitions from dominant ferromagnetic to antiferromagnetic correlations in similar regions of the phase diagram, we find that the nature of the associated phase transitions differs between the two approaches. The fluctuations accounted for in the generalized variational approach render the transitions continuous, while static mean-field theory predicts discontinuous transitions between ferro- and antiferromagnetically ordered states.

While the Hubbard model is the standard model to study Mott metal-insulator transitions, it is still unclear to which extent it can describe metal-insulator transitions in real solids, where non-local Coulomb interactions are always present. By using a variational principle, we clarify this issue for short- and long-ranged non-local Coulomb interactions for half-filled systems on bipartite lattices. We find that repulsive non-local interactions generally stabilize the Fermi-liquid regime. The metal-insulator phase boundary is shifted to larger interaction strengths to leading order linearly with non-local interactions. Importantly, non-local interactions can raise the order of the metal-insulator transition. We present a detailed analysis of how the dimension and geometry of the lattice as well as the temperature determine the critical non-local interaction leading to a first-order transition: for systems in more than two dimensions with non-zero density of states at the Fermi energy the critical non-local interaction is arbitrarily small; otherwise it is finite., Comment: 10 pages, 11 figures

When electron-hole pairs are excited in a semiconductor, it is a priori not clear if they form a plasma of unbound fermionic particles or a gas of composite bosons called excitons. Usually, the exciton phase is associated with low temperatures. In atomically thin transition metal dichalcogenide semiconductors, excitons are particularly important even at room temperature due to strong Coulomb interaction and a large exciton density of states. Using state-of-the-art many-body theory, we show that the thermodynamic fission–fusion balance of excitons and electron-hole plasma can be efficiently tuned via the dielectric environment as well as charge carrier doping. We propose the observation of these effects by studying exciton satellites in photoemission and tunneling spectroscopy, which present direct solid-state counterparts of high-energy collider experiments on the induced fission of composite particles., Owing to their atomically thin nature, 2D transition metal dichalcogenides host room temperature, strongly bound excitons. Here, the authors show that the thermodynamical balance between fission and fusion of excitons can be tuned by the dielectric environment and charge carrier doping and observed by photoemission spectroscopy.

We report a rare atom-like interaction between excitons in monolayer WS2, measured using ultrafast absorption spectroscopy. At increasing excitation density, the exciton resonance energy exhibits a pronounced redshift followed by an anomalous blueshift. Using both material-realistic computation and phenomenological modeling, we attribute this observation to plasma effects and an attraction-repulsion crossover of the exciton-exciton interaction that mimics the Lennard-Jones potential between atoms. Our experiment demonstrates a strong analogy between excitons and atoms with respect to inter-particle interaction, which holds promise to pursue the predicted liquid and crystalline phases of excitons in two-dimensional materials.

Inelastic electron tunneling spectroscopy with a scanning tunneling microscope is a powerful method to excite and detect vibrational quanta with atomic resolution. The focus of this review article is on the local spectroscopy of graphene phonons. The experimental observation of their spectroscopic signatures together with theoretical modeling highlight the importance of the graphene–surface as well as the graphene–tip hybridization, the electron– phonon coupling strength, phonon-mediated tunneling, local doping profiles, and the phonon density of state for the measured signal. Meanwhile, a comprehensive understanding of the underlying mechanisms has been attained and justifies an overview on available findings.

The interplay of electronic correlations, spin-orbit coupling and topology holds promise for the realization of exotic states of quantum matter. Models of strongly interacting electrons on honeycomb lattices have revealed rich phase diagrams featuring unconventional quantum states including chiral superconductivity and correlated quantum spin Hall insulators intertwining with complex magnetic order. Material realizations of these electronic states are however scarce or inexistent. In this work, we propose and show that stacking 1T-TaSe$_{2}$ into bilayers can deconfine electrons from a deep Mott insulating state in the monolayer to a system of correlated Dirac fermions subject to sizable spin-orbit coupling in the bilayer. 1T-TaSe$_{2}$ develops a Star-of-David (SoD) charge density wave pattern in each layer. When the SoD centers belonging to two adyacent layers are stacked in a honeycomb pattern, the system realizes a generalized Kane-Mele-Hubbard model in a regime where Dirac semimetallic states are subject to significant Mott-Hubbard interactions and spin-orbit coupling. At charge neutrality, the system is close to a quantum phase transition between a quantum spin Hall and an antiferromagnetic insulator. We identify a perpendicular electric field and the twisting angle as two knobs to control topology and spin-orbit coupling in the system. Their combination can drive it across hitherto unexplored grounds of correlated electron physics including a quantum tricritical point and an exotic first-order topological phase transition., Comment: 8 pages, 3 figures, Supplemental Material with 6 pages and 4 figures, hopping data files included

The manipulation of two-dimensional materials via their dielectric environment offers novel opportunities to control electronic as well as optical properties and allows to imprint nanostructures in a non-invasive way. Here we asses the potential of monolayer semiconducting transition metal dichalcogenides (TMDCs) for Coulomb engineering in a material realistic and quantitative manner. We compare the response of different TMDC materials to modifications of their dielectric surrounding, analyze effects of dynamic substrate screening, i.e. frequency dependencies in the dielectric functions, and discuss inherent length scales of Coulomb-engineered heterojunctions. We find symmetric and rigid-shift-like quasi-particle band-gap modulations for both, instantaneous and dynamic substrate screening. From this we derive short-ranged self energies for an effective multi-scale modeling of Coulomb engineered heterojunctions composed of an homogeneous monolayer placed on a spatially structured substrate. For these heterojunctions, we show that band gap modulations on the length scale of a few lattice constants are possible rendering external limitations of the substrate structuring more important than internal effects. We find that all semiconducting TMDCs are similarly well suited for these external and non-invasive modifications., Comment: 10 pages, 7 figures

Exotic ordered ground states driven by electronic correlations are expected to be induced in monolayer graphene when doped to the Van Hove singularity. Such doping levels are reached by intercalating Gd in graphene on SiC(0001), resulting in a strong homogeneity and stability. The electronic spectrum now exhibits severe renormalizations. Flat bands develop which are driven by electronic correlations according to our theoretical studies. Due to strong electron-phonon coupling in this regime, polaron replica bands develop. Thus, interesting ordered ground states should be made accessible.

For quasi-freestanding 2H-TaS2 in monolayer thickness grown by in situ molecular beam epitaxy on graphene on Ir(111), we find unambiguous evidence for a charge density wave close to a 3 × 3 periodicity. Using scanning tunneling spectroscopy, we determine the magnitude of the partial charge density wave gap. Angle-resolved photoemission spectroscopy, complemented by scanning tunneling spectroscopy for the unoccupied states, makes a tight-binding fit for the band structure of the TaS2 monolayer possible. As hybridization with substrate bands is absent, the fit yields a precise value for the doping of the TaS2 layer. Additional Li doping shifts the charge density wave to a 2 × 2 periodicity. Unexpectedly, the bilayer of TaS2 also displays a disordered 2 × 2 charge density wave. Calculations of the phonon dispersions based on a combination of density-functional theory, density-functional perturbation theory, and many-body perturbation theory enable us to provide phase diagrams for the TaS2 charge density wave as functions of doping, hybridization, and interlayer potentials, and offer insight into how they affect lattice dynamics and stability. Our theoretical considerations are consistent with the experimental work presented and shed light on previous experimental and theoretical investigations of related systems.

The observation of quantum light emission from atomically thin transition metal dichalcogenides has opened a new field of applications for these material systems. The corresponding excited charge-carrier localization has been linked to defects and strain, while open questions remain regarding the microscopic origin. We demonstrate that the bending rigidity of these materials leads to wrinkling of the two-dimensional layer. The resulting strain field facilitates strong carrier localization due to its pronounced influence on the band gap. Additionally, we consider charge carrier confinement due to local changes of the dielectric environment and show that both effects contribute to modified electronic states and optical properties. The interplay of surface wrinkling, strain-induced confinement, and local changes of the dielectric environment is demonstrated for the example of nanobubbles that form when monolayers are deposited on substrates or other two-dimensional materials.

We propose to create lateral heterojunctions in two-dimensional materials based on nonlocal manipulations of the Coulomb interaction using structured dielectric environments. By means of ab initio calculations for MoS2 as well as generic semiconductor models, we show that the Coulomb interaction-induced self-energy corrections in real space are sufficiently nonlocal to be manipulated externally, but still local enough to induce spatially sharp interfaces within a single homogeneous monolayer to form heterojunctions. We find a type-II heterojunction band scheme promoted by a laterally structured dielectric environment, which exhibits a sharp band gap crossover within less than 5 unit cells.

Magic-angle twisted bilayer graphene (MA-tBLG) has appeared as a tunable testing ground to investigate the conspiracy of electronic interactions, band structure, and lattice degrees of freedom to yield exotic quantum many-body ground states in a two-dimensional Dirac material framework. While the impact of external parameters such as doping or magnetic field can be conveniently modified and analyzed, the all-surface nature of the quasi-2D electron gas combined with its intricate internal properties pose a challenging task to characterize the quintessential nature of the different insulating and superconducting states found in experiments. We analyze the interplay of internal screening and dielectric environment on the intrinsic electronic interaction profile of MA-tBLG. We find that interlayer coupling generically enhances the internal screening. The influence of the dielectric environment on the effective interaction strength depends decisively on the electronic state of MA-tBLG. Thus, we propose the experimental tailoring of the dielectric environment, e.g. by varying the capping layer composition and thickness, as a promising pursuit to provide further evidence for resolving the hidden nature of the quantum many-body states in MA-tBLG., Comment: 9 pages, 3 figures, supplemental material included (8 figures)

We investigate the effects of external dielectric screening on the electronic dispersion and the band gap in the atomically thin, quasi-two-dimensional (2D) semiconductor WS_{2} using angle-resolved photoemission and optical spectroscopies, along with first-principles calculations. We find the main effect of increased external dielectric screening to be a reduction of the quasiparticle band gap, with rigid shifts to the bands themselves. Specifically, the band gap of monolayer WS_{2} is decreased by about 140meV on a graphite substrate as compared to a hexagonal boron nitride substrate, while the electronic dispersion of WS_{2} remains unchanged within our experimental precision of 17meV. These essentially rigid shifts of the valence and conduction bands result from the special spatial structure of the changes in the Coulomb potential induced by the dielectric environment of the monolayer.

Linear atomic chains containing a single Kondo atom, Co, and several nonmagnetic atoms, Cu, were assembled atom by atom on Cu(111) with the tip of a scanning tunneling microscope. The resulting one-dimensional wires, Cu$_m$CoCu$_n$ ($0\leq m, n\leq 5$), exhibit a rich evolution of the single-Co Kondo effect with the variation of $m$ and $n$, as inferred from changes in the line shape of the Abrikosov-Suhl-Kondo resonance. The most striking result is the quenching of the resonance in CuCoCu$_2$ and Cu$_2$CoCu$_2$ clusters. State-of-the-art first-principles calculations were performed to unravel possible microscopic origins of the remarkable experimental observations., Comment: 10 pages, 9 figures

In contrast to the Hubbard model, the extended Hubbard model, which additionally accounts for non-local interactions, lacks systemic studies of thermodynamic properties especially across the metal-insulator transition. Using a variational principle, we perform such a systematic study and describe how non-local interactions screen local correlations differently in the Fermi-liquid and in the insulator. The thermodynamics reveal that non-local interactions are at least in parts responsible for first-order metal-insulator transitions in real materials., 19 pages, 9 figures. Resubmission to SciPost

The adsorption of S on Si(111)- 7 × 7 has been investigated for different preparation schemes and parameters. S was supplied from an electrochemical Ag2S cell. For room temperature adsorption and subsequent annealing, no ordered S induced reconstruction can be observed with spot profile analysis low-energy electron diffraction (SPALEED). S deposition at temperatures above about 400 ∘C, however, leads to a well-ordered reconstruction. Judging from the LEED pattern, the same reconstruction was already observed by Metzner et al. [Surf. Sci. 377–379 (1997) 71–74] who identified it as 4 × 4 reconstruction. The upper temperature limit for the preparation of this superstructure depends on S flux, which is needed to compensate for desorption. Prolonged S exposure leads to surface roughening, as observed with SPALEED and scanning tunneling microscopy (STM), pointing to surface etching by S. From our SPALEED data, we can conclude that the observed reconstruction is not a 4 × 4 reconstruction, but a ( 2 0 1 2 ) superstructure with a rectangular unit cell that exists in three rotational domains, as confirmed by STM. Different structural trial models have been assessed with density functional theory. Among these model structures, a configuration with dimers adsorbed on bridging sites, with a S coverage of 1 monolayer, is most likely, since it is energetically favorable and is in agreement with all experimental results.

Monolayers of transition-metal dichalcogenides (TMDCs) exhibit an exceptionally strong Coulomb interaction between charge carriers due to the two-dimensional carrier confinement in connection with weak dielectric screening. High densities of excited charge carriers in the various band-structure valleys cause strong many-body renormalizations that influence both the electronic properties and the optical response of the material. We investigate electronic and optical properties of the typical monolayer TMDCs ${\mathrm{MoS}}_{2}, {\mathrm{MoSe}}_{2}, {\mathrm{WS}}_{2}$, and ${\mathrm{WSe}}_{2}$ in the presence of excited carriers by solving semiconductor Bloch equations on the full Brillouin zone. With increasing carrier density, we systematically find a reduction of the exciton binding energies due to Coulomb screening and Pauli blocking. Together with excitation-induced band-gap shrinkage this leads to red-shifts of excitonic resonances up to the dissociation of excitons. As a central result, we predict for all investigated monolayer TMDCs that the $\mathrm{\ensuremath{\Sigma}}$ valley shifts stronger than the $K$ valley. Two of the materials undergo a transition from direct to indirect band gaps under carrier excitation similar to well-known strain-induced effects. Our findings have strong implications for the filling of conduction-band valleys with excited carriers and are relevant to transport and optical applications as well as the emergence of phonon-driven superconductivity.

The electronic and optical properties of monolayer transition-metal dichalcogenides (TMDs) and van der Waals heterostructures are strongly subject to their dielectric environment. In each layer, the field lines of the Coulomb interaction are screened by the adjacent material, which reduces the single-particle band gap as well as exciton and trion binding energies. By combining an electrostatic model for a dielectric heteromultilayered environment with semiconductor many-particle methods, we demonstrate that the electronic and optical properties are sensitive to the interlayer distances on the atomic scale. An analytic treatment is used to provide further insight into how the interlayer gap influences different excitonic transitions. Spectroscopical measurements in combination with a direct solution of a three-particle Schrodinger equation reveal trion binding energies that correctly predict recently measured interlayer distances and shed light on the effect of temperature annealing.

Atomically thin transition-metal dichalcogenide (TMD) semiconductors possess strong Coulomb interactions due to reduced dielectric screening, leading to the formation of excitons with exceptionally large binding energies. The enhanced stability of excitons in these materials provides a unique platform to investigate excitonic interactions at room temperature and to examine the role of plasma effects and excitonic interactions over a broad range of excitation densities. We report an excitation-density dependent crossover between two regimes: Using ultrafast absorption spectroscopy, we observe a pronounced red shift of the exciton resonance followed by an anomalous blue shift with increasing excitation density. Using both material-realistic computation and phenomenological modeling, we attribute this observation to long-range Coulomb interaction in the presence of plasma screening in an attraction-repulsion crossover with the short-ranged exciton-exciton interaction that mimics the Lennard-Jones potential between atoms, suggesting a strong analogy between excitons and atoms in respect of inter-particle interaction. Our findings underline the important role of many-particle renormalizations and screening due to excited carriers in the device-relevant regime of optically or electrically excited TMDs.

Tuning the electronic properties of graphene by adatom deposition unavoidably introduces disorder into the system, which directly affects the single-particle excitations and electrodynamics. Using angle-resolved photoemission spectroscopy (ARPES) we trace the evolution of disorder in graphene by thallium adatom deposition and probe its effect on the electronic structure. We show that the signatures of quasiparticle scattering in the photoemission spectral function can be used to identify thallium adatoms, although charged, as efficient short-range scattering centers. Employing a self-energy model for short-range scattering, we are able to extract a δ-like scattering potential δ = -3.2 ± 1 eV. Therefore, isolated charged scattering centers do not necessarily act just as good long-range (Coulomb) scatterers but can also act as efficient short-range (δ-like) scatterers; in the case of thallium, this happens with almost equal contributions from both mechanisms.

The charge density is among the most fundamental solid state properties determining bonding, electrical characteristics, and adsorption or catalysis at surfaces. While atomic-scale charge densities have as yet been retrieved by solid state theory, we demonstrate both charge density and electric field mapping across a mono-/bilayer boundary in 2D MoS2 by momentum-resolved scanning transmission electron microscopy. Based on consistency of the four-dimensional experimental data, statistical parameter estimation and dynamical electron scattering simulations using strain-relaxed supercells, we are able to identify an AA-type bilayer stacking and charge depletion at the Mo-terminated layer edge. Published version

Charge transfers resulting from weak bondings between two-dimensional materials and the supporting substrates are often tacitly associated with their work function differences. In this context, two-dimensional materials could be normally doped at relatively low levels. Here, we demonstrate how even weak hybridization with substrates can lead to an apparent heavy doping, using the example of monolayer 1H-TaS2 grown on Au(111). Ab-initio calculations show that sizable changes in Fermi areas can arise, while the transferred charge between substrate and two-dimensional material is much smaller than the variation of Fermi areas suggests. This mechanism, which we refer to as pseudodoping, is associated with non-linear energy-dependent shifts of electronic spectra, which our scanning tunneling spectroscopy experiments reveal for clean and defective TaS2 monolayer on Au(111). The influence of pseudodoping on the formation of many-body states in two-dimensional metallic materials is analyzed, shedding light on utilizing pseudodoping to control electronic phase diagrams., Weak hybridization of two-dimensional metallic materials with their substrates plays a crucial role in charge transfer and doping characteristics. Here, the authors report heavy doping of monolayer 1H-TaS2 synthesized on Au(111) by ab-initio calculations and STM/STS experiments.

Using ab-initio calculations we reveal the nature of the insulating phase recently found experimentally in monolayer 1T-NbSe$_2$. We find soft phonon modes in a large parts of the Brillouin zone indicating the strong-coupling nature of a charge-density-wave instability. Structural relaxation of a $\sqrt{13}\times\sqrt{13}$ supercell reveals a Star-of-David reconstruction with an energy gain of 60 meV per primitive unit cell. The band structure of the distorted phase exhibits a half-filled flat band which is associated with orbitals that are delocalized over several atoms in each Star of David. By including many-body corrections through a combined GW, hybrid-functional, and DMFT treatment, we find the flat band to split into narrow Hubbard bands. The lowest energy excitation across the gap turns out to be between itinerant Se-$p$ states and the upper Hubbard band, determining the system to be a charge-transfer insulator. Combined hybrid-functional and GW calculations show that long-range interactions shift the Se-$p$ states to lower energies. Thus, a delicate interplay of local and long-range correlations determines the gap nature and its size in this distorted phase of the monolayer 1T-NbSe$_2$., Comment: 10 pages, 11 figures

In order for methods combining ab initio density-functional theory and many-body techniques to become routinely used, a flexible, fast, and easy-to-use implementation is crucial. We present an implementation of a general charge self-consistent scheme based on projected localized orbitals in the projector augmented wave framework in the Vienna Ab Initio Simulation Package (VASP). We give a detailed description on how the projectors are optimally chosen and how the total energy is calculated. We benchmark our implementation in combination with dynamical mean-field theory: first we study the charge-transfer insulator NiO using a Hartree-Fock approach to solve the many-body Hamiltonian. We address the advantages of the optimized against non-optimized projectors and furthermore find that charge self-consistency decreases the dependence of the spectral function - especially the gap - on the double counting. Second, using continuous-time quantum Monte Carlo we study a monolayer of SrVO$_3$, where strong orbital polarization occurs due to the reduced dimensionality. Using total-energy calculation for structure determination, we find that electronic correlations have a non-negligible influence on the position of the apical oxygens, and therefore on the thickness of the single SrVO$_3$ layer., 11 pages, 6 figures

Atomically thin layers of transition metal dichalcogenides (TMDCs) exhibit exceptionally strong Coulomb interaction between charge carriers due to the two-dimensional carrier confinement in connection with weak dielectric screening. The van der Waals nature of interlayer coupling makes it easy to integrate TMDC layers into heterostructures with different dielectric or metallic substrates. This allows to tailor electronic and optical properties of these materials, as Coulomb interaction inside atomically thin layers is very susceptible to screening by the environment. Here, we theoretically investigate dynamical screening effects in TMDCs due to bulk substrates doped with carriers over a large density range, thereby offering three-dimensional plasmons as a tunable degree of freedom. We report a wide compensation of renormalization effects leading to a spectrally more stable exciton than predicted for static substrate screening, even if plasmons and excitons are in resonance. We also find a nontrivial dependence of the single-particle band gap on substrate doping density due to dynamical screening. Our investigation provides microscopic insight into the mechanisms that allow for manipulations of TMDC excitons by means of arbitrary plasmonic environments on the nanoscale.

The electronic structure of thin films of FeTe grown on Bi$_2$Te$_3$ is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk \FeTe taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi$_2$Te$_3$ in three domains, rotated by 0$^{\circ}$, 120$^{\circ}$, and 240$^{\circ}$. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65~meV for the bulk and a renormalization factor of around 2. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film's electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film's high density of states at the Fermi energy. This behavior is also supported by the ab-initio calculations.

The characteristics of the cooperative Mott-Peierls metal-insulator transition (MIT) of ${\mathrm{VO}}_{2}$ can be altered by employing epitaxial strain. While the most commonly used substrate for this purpose is isostructural rutile ${\mathrm{TiO}}_{2}$, thin films often suffer from interdiffusion of Ti ions near the interface. Exploiting this phenomena, we investigate the nature of interfacial ${\mathrm{V}}^{4+}/{\mathrm{Ti}}^{4+}$ cation intermixing and its effects on the MIT using scanning transmission electron microscopy with electron energy loss spectroscopy (STEM-EELS), soft x-ray absorption spectroscopy (XAS), and hard x-ray photoelectron spectroscopy (HAXPES), along with supporting density functional theory (DFT) calculations. We find that the reduced orbital occupancy in highly Ti incorporated ${\mathrm{VO}}_{2}$ is responsible for suppressing the MIT. Interdiffused films are found to be metallic at all measured temperatures, despite a resolute dimerization inferred from x-ray absorption data at lower temperatures. Our results demonstrate that the Mott physics can be suppressed in doped ${\mathrm{VO}}_{2}$, while a lattice dimerization remains thermodynamically favorable.

Nanostructures with open shell transition metal or molecular constituents host often strong electronic correlations and are highly sensitive to atomistic material details. This tutorial review discusses method developments and applications of theoretical approaches for the realistic description of the electronic and magnetic properties of nanostructures with correlated electrons. First, the implementation of a flexible interface between density functional theory and a variant of dynamical mean field theory (DMFT) highly suitable for the simulation of complex correlated structures is explained and illustrated. On the DMFT side, this interface is largely based on recent developments of quantum Monte Carlo and exact diagonalization techniques allowing for efficient descriptions of general four fermion Coulomb interactions, reduced symmetries and spin-orbit coupling, which are explained here. With the examples of the Cr (001) surfaces, magnetic adatoms, and molecular systems it is shown how the interplay of Hubbard U and Hund's J determines charge and spin fluctuations and how these interactions drive different sorts of correlation effects in nanosystems. Non-local interactions and correlations present a particular challenge for the theory of low dimensional systems. We present our method developments addressing these two challenges, i.e., advancements of the dynamical vertex approximation and a combination of the constrained random phase approximation with continuum medium theories. We demonstrate how non-local interaction and correlation phenomena are controlled not only by dimensionality but also by coupling to the environment which is typically important for determining the physics of nanosystems., tutorial review submitted to EPJ-ST (scientific report of research unit FOR 1346); 14 figures, 26 pages

We investigate how external screening shapes excitons in two-dimensional (2d) semiconductors embedded in laterally structured dielectric environments. An atomic scale view of these elementary excitations is developed using models which apply to a variety of materials including transition metal dichalcogenides (TMDCs). We find that structured dielectrics imprint a peculiar potential energy landscape on excitons in these systems: While the ground-state exciton is least influenced, higher excitations are attracted towards regions with high dielectric constant of the environment. This landscape is "inverted" in the sense that low energy excitons are less strongly affected than their higher energy counterparts. Corresponding energy variations emerge on length scales of the order of a few unit cells. This opens the prospect of trapping and guiding of higher excitons by means of tailor-made dielectric substrates on ultimately small spatial scales.

We analyze the interplay of spin-valley coupling, orbital physics and magnetic anisotropy taking place at single magnetic atoms adsorbed on semiconducting transition-metal dichalcogenides, MX$_2$ (M = Mo, W; X = S, Se). Orbital selection rules turn out to govern the kinetic exchange coupling between the adatom and charge carriers in the MX$_2$ and lead to highly orbitally dependent spin-flip scattering rates, as we illustrate for the example of transition metal adatoms with $d^9$ configuration. Our ab initio calculations suggest that $d^9$ configurations are realizable by single Co, Rh, or Ir adatoms on MoS$_2$, which additionally exhibit a sizable magnetic anisotropy. We find that the interaction of the adatom with carriers in the MX$_2$ allows to tune its behavior from a quantum regime with full Kondo screening to a regime of "Ising spintronics" where its spin-orbital moment acts as classical bit, which can be erased and written electronically and optically., 6 pages, 4 figures

Wrinkles and blisters of graphene on Ir(111) give rise to remarkably high signals in inelastic electron tunneling spectroscopy due to graphene phonons. Spatially resolved spectra unravel the gradual increase of the graphene phonon signatures with progressive delamination of graphene from the metal surface. Spectroscopy of the Ir(111) surface resonance evidences that the graphene-metal hybridization is efficiently reduced in wrinkles and blisters. A high phonon density of states favors the observation of phonons with wave vectors near the $\overline{M}$ point of the surface Brillouin zone.

We study the ground-state and finite-density optical response of molybdenum disulfide by solving the semiconductor Bloch equations, using ab initio band structures and Coulomb interaction matrix elements. Spectra for excited carrier densities up to 1013 cm–2 reveal a redshift of the excitonic ground-state absorption, whereas higher excitonic lines are found to disappear successively due to Coulomb-induced band gap shrinkage of more than 500 meV and binding-energy reduction. Strain-induced band variations lead to a redshift of the lowest exciton line by ∼110 meV/% and change the direct transition to indirect while maintaining the magnitude of the optical response.

Artificially assembled linear atomic clusters, CoCu n CoCu m , are used to explore variations of the Kondo effect at the two Co sites. For all investigated Cu n chain lengths ( ) the addition of a single Cu atom to one edge Co atom of the chain ( ) strongly reduces the amplitude of the Abrikosov–Suhl–Kondo resonance of that Co atom. Concomitantly, the resonance line width is more than halved. On the contrary, the Kondo effect of the opposite edge Co atom remains unaffected. Hybridization together with the linear geometry of the cluster are likely to drive the effect.

Dirac materials are characterized by exceptional mobility, orders of magnitude higher than any semiconductor, due to the massless pseudorelativistic nature of the Dirac fermions. These systems being semimetallic, the lack of a genuine band-gap poses a serious limitation to their possible applications in electronics. We recently demonstrated that thin TiO2 nanowires can exhibit 1D Dirac states similar to metallic carbon nanotubes, with the crucial difference that these states lie inside the conduction band in proximity of a wide band gap. We analyze the robustness of the Dirac states respect to an Anderson disorder model and substitutional impurity and compare to different one dimensional systems. The results suggest that thin anatase TiO2 nanowires can be a promising candidate material for switching devices.

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe and InAs/GaSb suffer from small bulk gaps (, 3 figures, 1 table

The interplay of Coulomb and electron–phonon interactions with thermal and quantum fluctuations facilitates rich phase diagrams in two-dimensional electron systems. Layered transition metal dichalcogenides hosting charge, excitonic, spin and superconducting order form an epitomic material class in this respect. Theoretical studies of materials like NbS2 have focused on the electron–phonon coupling, whereas the Coulomb interaction, particularly strong in the monolayer limit, remained essentially untouched. Here, we analyze the interplay of short- and long-range Coulomb as well as electron–phonon interactions in NbS2 monolayers. The combination of these interactions causes electronic correlations that are fundamentally different to what would be expected from the interaction terms separately. The fully interacting electronic spectral function resembles the non-interacting band structure but with appreciable broadening. An unexpected coexistence of strong charge and spin fluctuations puts NbS2 close to spin and charge order, suggesting monolayer NbS2 as a platform for atomic scale engineering of electronic quantum phases.

We demonstrate pronounced electric-field-induced second-harmonic generation in naturally inversion symmetric 2H stacked bilayer MoS$_{2}$ embedded into microcapacitor devices. By applying strong external electric field perturbations ($|F| = \pm 2.6 MVcm^{-1}$) perpendicular to the basal plane of the crystal we control the inversion symmetry breaking and, hereby, tune the nonlinear conversion efficiency. Strong tunability of the nonlinear response is observed throughout the energy range ($E_{\omega} \sim 1.25 eV - 1.47 eV$) probed by measuring the second-harmonic response at $E_{2\omega}$, spectrally detuned from both the A- and B-exciton resonances. A 60-fold enhancement of the second-order nonlinear signal is obtained for emission at $E_{2\omega} = 2.49 eV$, energetically detuned by $\Delta E = E_{2\omega} - E_C = -0.26 eV$ from the C-resonance ($E_{C} = 2.75 eV$). The pronounced spectral dependence of the electric-field-induced second-harmonic generation signal reflects the bandstructure and wave function admixture and exhibits particularly strong tunability below the C-resonance, in good agreement with Density Functional Theory calculations. Moreover, we show that the field-induced second-harmonic generation relies on the interlayer coupling in the bilayer. Our findings strongly suggest that the strong tunability of the electric-field-induced second-harmonic generation signal in bilayer transition metal dichalcogenides may find applications in miniaturized electrically switchable nonlinear devices., Comment: 8 pages, 5 figures

The rich phenomenology of plasmonic excitations in the dichalcogenides is analyzed as a function of doping. The many-body polarization, the dielectric response function, and electron energy loss spectra are calculated using an ab initio based model involving material-realistic Coulomb interactions, band structure, and spin-orbit coupling. Focusing on the representative case of ${\mathrm{MoS}}_{2}$, a plethora of plasmon bands are observed, originating from scattering processes within and between the conduction or valence band valleys. We discuss the resulting square-root and linear collective modes, arising from long-range versus short-range screening of the Coulomb potential. We show that the multiorbital nature of the bands and spin-orbit coupling strongly affects intervalley scattering processes by gapping certain two-particle modes at large momentum transfer.

Graphene is an ideal platform to study many-body effects due to its semimetallic character and the possibility to dope it over a wide range. Here we study the width of graphene's occupied $\pi$-band as a function of doping using angle-resolved photoemission. Upon increasing electron doping, we observe the expected shift of the band to higher binding energies. However, this shift is not rigid and the bottom of the band moves less than the Dirac point. We show that the observed shift cannot be accounted for by band structure calculations in the local density approximation but that non-local exchange interactions must be taken into account., Comment: 5 pages, 3 figures