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Environmental Control of Charge Density Wave Order in Monolayer 2H-TaS2
- Source :
- ACS Nano, 13, 9, pp. 10210-10220, ACS Nano, 13, 10210-10220, ACS Nano
- Publication Year :
- 2019
-
Abstract
- For quasi-freestanding 2H-TaS2 in monolayer thickness grown by in situ molecular beam epitaxy on graphene on Ir(111), we find unambiguous evidence for a charge density wave close to a 3 × 3 periodicity. Using scanning tunneling spectroscopy, we determine the magnitude of the partial charge density wave gap. Angle-resolved photoemission spectroscopy, complemented by scanning tunneling spectroscopy for the unoccupied states, makes a tight-binding fit for the band structure of the TaS2 monolayer possible. As hybridization with substrate bands is absent, the fit yields a precise value for the doping of the TaS2 layer. Additional Li doping shifts the charge density wave to a 2 × 2 periodicity. Unexpectedly, the bilayer of TaS2 also displays a disordered 2 × 2 charge density wave. Calculations of the phonon dispersions based on a combination of density-functional theory, density-functional perturbation theory, and many-body perturbation theory enable us to provide phase diagrams for the TaS2 charge density wave as functions of doping, hybridization, and interlayer potentials, and offer insight into how they affect lattice dynamics and stability. Our theoretical considerations are consistent with the experimental work presented and shed light on previous experimental and theoretical investigations of related systems.
- Subjects :
- Materials science
Phonon
Photoemission spectroscopy
Theory of Condensed Matter
Scanning tunneling spectroscopy
General Engineering
General Physics and Astronomy
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Molecular physics
0104 chemical sciences
Density wave theory
Partial charge
Condensed Matter::Materials Science
Monolayer
General Materials Science
ddc:530
0210 nano-technology
Electronic band structure
Charge density wave
Subjects
Details
- Language :
- German
- ISSN :
- 19360851
- Database :
- OpenAIRE
- Journal :
- ACS Nano, 13, 9, pp. 10210-10220, ACS Nano, 13, 10210-10220, ACS Nano
- Accession number :
- edsair.doi.dedup.....374a44c316fe031979aa857faec9b60e