411 results on '"Takeda, Yoshikazu"'
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2. Local structures in GaInP on GaAs studied by fluorescence-detected exafs
3. AichiSR: A Decade of Advanced Research and Innovation in Industry and Academia.
4. Soft X-ray beamline BL1N2 at Aichi Synchrotron Radiation Center and its industrial use
5. Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation
6. Substrate dependence of the superconducting properties of NdFeAs(O,F) thin films
7. X-ray characterization at growth temperatures of InxGa1−xN growth by MOVPE
8. Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures
9. High-quality and large-area 3C–SiC growth on 6H–SiC(0 0 0 1) seed crystal with top-seeded solution method
10. Increase of spectral width of stacked InAs quantum dots on GaAs by controlling spacer layer thickness
11. Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si–Sc–C system
12. Highly spin-polarized electron photocathode based on GaAs–GaAsP superlattice grown on mosaic-structured buffer layer
13. Solution growth of high-quality 3C-SiC crystals
14. Nonequilibrium Carrier Dynamics Studied in Er,O-Codoped GaAs by Pump-Probe Reflection Technique
15. Doping effects on 1.54 μm photoluminescence from Er-containing ZnO
16. Surface morphology of ErP layers on InP and Ga 0.52In 0.48P
17. Aichi Synchrotron Radiation Center and Industrial Use
18. Current Status of BL6N1 of AichiSR: a Tender X-ray Beamline for XAFS and Photoemission Spectroscopy
19. Behaviors of Nonequilibrium Carriers in Er, O-Codoped GaAs for 1.5μm Light-Emitting Devices with Extremely Stable Wavelength
20. Effects of S-Doping and Subsequent Annealing on Photoluminescence around 1.54ųm from Er-Containing ZnO
21. Interfacial layer in homoepitaxial InP grown by organometallic vapor phase epitaxy with TMIn and TBP
22. Low-temperature photoluminescence study on Er-doped GaP grown by organometallic vapor phase epitaxy
23. Layer structure analysis of Er delta-doped InP by x-ray crystal truncation rod scattering
24. Aminoalkylbisphosphonates, potent inhibitors of bone resorption, induce a prolonged stimulation of histamine synthesis and increase macrophages, granulocytes, and osteoclasts in vivo
25. Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy
26. Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy
27. Cathodoluminescence study of selective epitaxial growth of In xGa 1− xAs ( x∼0.53) thin quantum wells on InP pyramid structures on a masked substrate
28. Extremely Large Er Excitation Cross Section in Er,O-Codoped GaAs Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy
29. In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy.
30. Luminescence properties of Er,O-codoped GaP grown by organometallic vapor phase epitaxy
31. In situ X-ray reflectivity of indium supplied on GaN templates by metal organic vapor phase epitaxy.
32. Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices.
33. Recovery of quantum efficiency in spin-polarized photocathodes by atomic hydrogen cleaning
34. High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP superlattice layers.
35. Thermal emittance measurements for electron beams produced from bulk and superlattice negative electron affinity photocathodes.
36. Electron spin resonance study of Zn-codoping effect on the local structure of the Er-related centers in GaAs:Er,O.
37. Electron spin resonance study of GaAs:Er,O grown by organometallic vapor phase epitaxy.
38. Central Japan Synchrotron Radiation Research Facility Project
39. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity
40. Luminescence properties of Tm2O3-doped oxide glasses for NIR wideband light source
41. New photocathode using ZnSe substrates with GaAs active layer
42. Comparison between SiC- and Si-Based Inverters for Photovoltaic Power Generation Systems
43. Luminescence properties of Pr6O11-doped and PrF3-doped germanate glasses for wideband NIR phosphor
44. Quantum Efficiency Improvement of Polarized Electron Source using Strain Compensated Super Lattice Photocathode
45. DX-center-like traps and persistent photoconductivity in Te-doped AlxGa1-xSb on GaSb.
46. Electron mobility and energy gap of In0.53Ga0.47As on InP substrate.
47. Photoemission from III-V Semiconductor Cathodes
48. The Boersch effect in a picosecond pulsed electron beam emitted from a semiconductor photocathode
49. XAFS beam lines at Aichi Synchrotron Radiation Center dedicated to industrial use
50. Evaluation of photovoltaic power generation system using spherical silicon solar cells and SiC-FET inverter
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